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1.
A continuous-time 7th-order Butterworth Gm-C low pass filter (LPF) with on-chip automatic tuning circuit has been implemented for a direct conversion DBS tuner in 0.35μm SiGe BiCMOS technology. The filter's -3 dB cutoff frequency f0 can be tuned from 4 to 40 MHz. A novel on-chip automatic tuning scheme has been successfully realized to tune and lock the filter's cutoff frequency. Measurement results show that the filter has -0.5 dB passband gain, +/- 5% bandwidth accuracy, 30 nV/Hz1/2 input referred noise, -3 dBVrms passband IIP3, and 27 dBVrms stopband IIP3. The I/Q LPFs with the tuning circuit draw 13 mA (with f0 = 20 MHz) from 5 V supply, and occupy 0.5 mm2.  相似文献   

2.
This paper presents a high linearity wideband sharp roll-off Opamp-RC low-pass filter (LPF) for Ultra wideband (UWB) applications. The proposed LPF is composed of three biquads’ transfer functions with different Q-factors in series. Sharp roll-off is attributed to the steep slope of the peaking of a biquad transfer function with a high Q-factor. The superposition of these biquads also helps extend the bandwidth of the overall LPF transfer function without the cost of extra power dissipation. The effects of biquad arrangements on noise and linearity performances are investigated. A simple operational amplifier (op-amp) is adopted to ensure high frequency characteristics and high linearity performance for the designed filter. The LPF is implemented in 0.13-μm IBM CMOS process from 1.5 V supply. The measured cutoff frequency is 264 MHz with the pass-band ripple of less than 1 dB. Digital frequency tuning is implemented with 40% of tuning range around the cutoff frequency. The amount of out-of-band rejection at 290 MHz and at twice cutoff frequency is 12 dB and about 50 dB, respectively. Good linearity with IIP3 of 23 dBm is obtained. The 6th-order LPF dissipates only 12 mW with the active chip size of 400 × 640 μm2.  相似文献   

3.
An analog baseband circuit made in a 0.35-μm SiGe BiCMOS process is presented for China Multimedia Mobile Broadcasting (CMMB) direct conversion receivers. A high linearity 8th-order Chebyshev low pass filter (LPF) with accurate calibration system is used. Measurement results show that the filter provides 0.5-dB passband ripple, 4% bandwidth accuracy, and -35-dB attenuation at 6 MHz with a cutoff frequency of 4 MHz. The current steering type variable gain amplifier (VGA) achieves more than 40-dB gain range with excellent temperature compensation. This tuner baseband achieves an OIP3 of 25.5 dBm, dissipates 16.4 mA under a 2.8-V supply and occupies 1.1 mm2 of die size.  相似文献   

4.
耿志卿  吴南健 《半导体学报》2015,36(4):045006-12
本论文提出了一种面向多标准收发器的具有精确片上调谐电路的低功耗宽调谐范围基带滤波器。设计的滤波器是由三级Active-Gm-RC类型的双二次单元级联组成的六阶巴特沃斯低通滤波器。采用改进的线性化技术来提高低通滤波器的线性度。论文提出了一种新的匹配性能与工艺无关的跨导匹配电路和具有频率补偿的频率调谐电路来增加滤波器的频率响应精度。为了验证设计方法的有效性,采用标准的130nm CMOS工艺对滤波器电路进行流片。测试结果表明设计的低通滤波器带宽调谐范围为0.1MHz-25MHz,频率调谐误差小于2.68%。滤波器在1.2V的电源电压下,功耗为0.52mA到5.25mA,同时取得26.3dBm的带内输入三阶交调点。  相似文献   

5.
A novel pseudo differential transconductor for multi-mode analog baseband channel selection filter is presented. The highly linear transconductor is designed based on the dynamic source degeneration and predistortion cancellation technique. Meanwhile, wide tuning range is achieved with the current division technique. An LC ladder third-order Butterworth low-pass filter implemented with transconductors and capacitors was fabricated by TSMC 0.18-μm CMOS process. The results show that the filter can operate with the cutoff frequency ranging from 4 to 20 MHz. The tuning range is wide enough for the specifications of IEEE 802.11a/b/g/n Wireless LANs under the consideration of low power consumption and linearity requirement. The maximum power consumption is 3.61 mA at the cutoff frequency of 20 MHz.  相似文献   

6.
This paper presents an 8th order active-RC elliptic low-pass filter(LPF) for a direct conversion China Mobile Multimedia Broadcasting(CMMB) tuner with a 1 or 4 MHz -3 dB cutoff frequency(f-3dB).By using a novel gain-bandwidth-product(GBW) extension technique in designing the operational amplifiers(op-amps), the proposed filter achieves 71 dB stop-band rejection at 1.7f-3dB to meet the stringent CMMB adjacent channel rejection(ACR) specifications while dissipates only 2.8 mA/channel from a 3 V supply,its bias current can be further lowered to 2 mA/channel with only 0.5 dB peaking measured at the filter’s pass-band edge.Elaborated common-mode(CM) control circuits are applied to the filter op-amp to increase its common-mode rejection ratio (CMRR) and effectively reject the large signal common-mode interference.Measurement results show that the filter has 128 dBμVrms in-band IIP3 and more than 80 dB passband CMRR.Fabricated in a 0.35-μm SiGe BiCMOS process,the proposed filter occupies a 1.19 mm2 die area.  相似文献   

7.
A fifth-order LPF with a quality factor (Q) tuning circuit has been implemented for draft IEEE802.11n in a 0.13 CMOS technology. The proposed Q tuning technique realizes a low-power 19.7 MHz, active-RC Chebyshev LPF. The filter has dB gain, 30 nV/Hz1/2 input-referred noise, 113 dBmuV input , P 1dB,draws 7.5 mA current from 1.5 V supply, and occupies an area of 0.2 mm2.  相似文献   

8.
姚金科  吴恩德  池保勇  王志华 《电子学报》2006,34(11):2076-2080
本文实现了一个应用于全集成L带DAB接收机的5阶Gm-C椭圆低通滤波器,该滤波器上集成了基于锁相环的片上频率自动调谐电路,使得该滤波器的截止频率可以准确控制在4MHz.该滤波器已经采用0.35μm CMOS工艺实现.测试结果表明,该滤波器的频率精度可以控制在1%以内,动态范围约为54dB,阻带抑制率大于40dB.该滤波器采用3.3V电源,消耗的电流约为13mA.  相似文献   

9.
A combination of continuous-time and switched capacitor integrators in a simulated LC lossless ladder yields a response with suppressed aliasing without the use of continuous-time prefiltering. Fabricated in a 0.35-μm CMOS process, a fifth-order Cauer low-pass filter for a W-CDMA cellular phone receiver has a cutoff frequency of 1.92 MHz and aliasing suppression of better than 40 dB for 30.72-MHz sampling. Without using any tuning mechanism, a 10% accuracy of the cutoff frequency is achieved. As additional features, the filter has variable gain from -13.3 to 16.4 dB and an offset compensation mechanism. With the latter, a 50-mV dc offset added to the input is suppressed to 11 mV or less at the filter output under the maximum gain setting. The filter consumes 2.81 mA at 1.8-V power supply in a die area of 0.62 mm2  相似文献   

10.
A 2.4 GHz 6.6 mA fully differential CMOS phase-locked loop (PLL) frequency synthesiser with an on-chip capacitance-calibrated loop filter is presented. The frequency synthesiser includes a differential-tuning voltage-control oscillator (VCO) and a fully differential charge-pump (CP) to reject the common-mode noise. A combination of analogue tuning and digital tuning techniques (4-bit binary weighted capacitor array) is utilised to extend the tuning range of the VCO. A novel topology and an optimisation strategy are utilised to reduce the power consumption of the frequency divider. The capacitance in the loop filter is on-chip calibrated so that the loop dynamic characteristics are accurately controlled despite the process variation. The frequency synthesiser has been implemented in UMC 0.18 μm CMOS. The measured results show that the VCO achieves a 29% tuning range, from 2.056 to 2.758 GHz. The phase noise of the frequency synthesiser is ? 117.2 dBc/Hz at 1 MHz frequency offset from the 2.3 GHz carrier. The settling time is less than 50 μs, and the capacitance in the loop filter could be on-chip calibrated to ±3.9% precision. The whole frequency synthesiser only consumes 6.6 mA current from a 1.8 V power supply.  相似文献   

11.
层叠式LTCC低通滤波器设计   总被引:2,自引:2,他引:0  
给出带有衰减极点的层叠式LTCC低通滤波器的结构模型。滤波器外形尺寸为2.0mm×1.2mm×0.9mm,采用εr=7.8、tanδ=0.0047微波陶瓷介质材料,设计出的截止频率?c=300MHz的低通滤波器,通带最大插入损耗为0.8dB,通过引入一个衰减极点,提高阻带的衰减性能,同时获得陡峭的过渡带。  相似文献   

12.
A coplanar waveguide low-pass filter (LPF) using two different LPF unit cells (LUCs) and a small defected ground structure (DGS) unit cell (DUC) is presented. By cascading two LUCs, which are different in structure and harmonic passbands, and combining a dumbbell-like-shaped DUC to the cascaded LPF, we extended the stopband to seven times the cutoff frequency. The proposed LPF is superior to the conventionally cascaded LPF, in which the same LUCs are used, in reduction of the harmonic passbands and the size. The fabricated LPF shows a compact size of 18.2mm times 11mm, the cutoff frequency of 3GHz, and the sharp skirt response like a fifth-order LPF with two notch frequencies. The measured frequency responses agree well with the simulated ones  相似文献   

13.
This paper presents a 4th-order reconfigurable analog baseband filter for software-defined radios.The design exploits an active-RC low pass filter(LPF) structure with digital assistant,which is flexible for tunability of filter characteristics,such as cut-off frequency,selectivity,type,noise,gain and power.A novel reconfigurable operational amplifier is proposed to realize the optimization of noise and scalability of power dissipation.The chip was fabricated in an SMIC 0.13μm CMOS process.The main filter and frequency calibration circuit occupy 1.8×0.8 mm2 and 0.48×0.25 mm2 areas,respectively.The measurement results indicate that the filter provides Butterworth and Chebyshev responses with a wide frequency tuning range from 280 kHz to 15 MHz and a gain range from 0 to 18 dB.An IIP3 of 29 dBm is achieved under a 1.2 V power supply.The input inferred noise density varies from 41 to 133 nV/(Hz)1/2 according to a given standard,and the power consumptions are 5.46 mW for low band(from 280 kHz to 3 MHz) and 8.74 mW for high band(from 3 to 15 MHz) mode.  相似文献   

14.
冯筱  文光俊  孙慕明 《电视技术》2011,35(19):30-33
介绍了应用于多模多频(DVB/DAB/CMMB)移动数字电视接收的可编程信道滤波器设计.滤波器采用0.1dB波纹的7阶切比雪夫(Chebyshev)Ⅰ型低通结构,截止频率1.8/2.5/3/3.5/4 MHz可编程,在偏离截止频率1.25/4 MHz的频点上,分别实现26/57 dB衰减.多级直流负反馈环路用于抵消因版...  相似文献   

15.
A CMOS operational transconductance amplifier (OTA) for low-power and wide tuning range filter application is proposed in this paper. The OTA can work from the weak inversion region to the strong inversion region to maximize the transconductance tuning range. The transconductance can be tuned by changing its bias current. A fifth-order Elliptic low-pass filter implemented with the OTAs was integrated by TSMC 0.18-mum CMOS process. The filter can operate with the cutoff frequency of 250 Hz to 1 MHz. The wide tuning range filter would be suitable for multi-mode applications, especially under the consideration of saving chip areas. The third-order inter-modulation (IM3) of -40 dB was measured over the tuning range with two tone input signals. The power consumption is 0.8 mW at 1-MHz cutoff frequency and 1.8-V supply voltage with the active area less than 0.3 mm2  相似文献   

16.
提出了一种适用于宽带大动态范围应用的六阶跨导电容低通滤波器。该滤波器为Chebyshev类型,采用开环级联结构来实现。通过一组开关电容阵列来补偿由工艺温度等因素引入的截止频率的偏差。实际测试结果表明,该滤波器的-3dB截止频率可调范围为30~100MHz,在500mVp-p输入信号幅度下,IM3为-48dB。电源电压为3V时,消耗电流25mA,芯片面积为0.5mm2。该滤波器采用TSMC0.13μm CMOS工艺实现。  相似文献   

17.
A 264 MHz CMOS 4th G_m-C LPF target for the UWB standard is presented.The filter is designed by cascading two biquad cells.Compared with the previously published biquad cells,the biquad proposed here saves 1 transconductor,3 CMFB networks and 2 capacitors.Benefiting from these merits,the power consumption and chip area of the 4th order UWB LPF are reduced dramatically without other characteristics being affected.The LPF is designed and fabricated with TSMC 0.18μm 1P6M CMOS technology.The implemented LPF ...  相似文献   

18.
A 1.0 V, 10 MHz Gm-opamp-C filter is described. For low voltage and high frequency operation, the number of internal nodes is minimized to avoid the generation of parasitic poles and the number of stacked transistors between VDD and GND is limited to two. The frequency response of the filter is automatically tuned by a simple self tuning circuit. The measured dynamic range of the filter is 47 dB while dissipating 5 mA.  相似文献   

19.
A technique for setting the absolute frequency of a 1.5-μm two-section distributed Bragg reflector (DBR) laser using an Er:YAG optical filter as a frequency discriminator is described. The absolute frequency of the laser was controlled with an accuracy better than 300 MHz over a tuning range of several hundred gigahertz. The frequency drift with laser temperature was -130 MHz/°C, and the tuning rate with current in the active region was 40 MHz/mA  相似文献   

20.
This paper addresses a fully‐integrated low phase noise X‐band oscillator fabricated using a carbon‐doped InGaP heterojunction bipolar transistor (HBT) GaAs process with a cutoff frequency of 53.2 GHz and maximum oscillation frequency of 70 GHz. The oscillator circuit consists of a negative resistance generating circuit with a base inductor, a resonating emitter circuit with a microstrip line, and a buffering resistive collector circuit with a tuning diode. The oscillator exhibits 4.33 dBm output power and achieves ?127.8 dBc/Hz phase noise at 100 kHz away from a 10.39 GHz oscillating frequency, which benchmarks the lowest reported phase noise achieved for a monolithic X‐band oscillator. The oscillator draws a 36 mA current from a 6.19 V supply with 47.1 MHz of frequency tuning range using a 4 V change. It occupies a 0.8 mm × 0.8 mm die area.  相似文献   

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