基于蓝宝石衬底的Ku波段3.4W/mm功率AlGaN/GaN HEMT

本文报道了国内第一个基于蓝宝石衬底的ku波段AlGaN/GaN HEMT。器件总栅宽0.5mm,栅长0.35um。漏压30V下器件的ft为20GHz,fmax为75GHz。在漏压30V、连续波测试条件下,器件在14GHz的线性增益为10.4dB,3dB增益压缩的输出功率为1.4W,附加效率41%。在脉冲测试条件下,线性增益12.8dB,3dB增益压缩的输出功率为1.7W,功率密度达到3.4W/mm。     

高性能1mm SiC基AlGaN/GaN功率HEMT研制

在6H-SiC衬底上,外延生长了AlGaN/GaN HEMT结构,设计并实现了高性能1mm AlGaN/GaN微波功率HEMT,外延材料利用金属有机物化学气相淀积技术生长.测试表明,该lmm栅宽器件栅长为0.8μm,输出电流密度达到1.16A/mm,跨导为241mS/mm,击穿电压＞80V,特征频率达到20GHz,最大振荡频率为28GHz.5.4GHz连续波测试下功率增益为14.2dB,输出功率达4.1W,脉冲条件测试下功率增益为14.4dB,输出功率为5.2W,两端口阻抗特性显示了在微波应用中的良好潜力.     

高性能1mm SiC基AlGaN/GaN功率HEMT研制

在6H-SiC衬底上,外延生长了AlGaN/GaN HEMT结构,设计并实现了高性能1mm AlGaN/GaN微波功率HEMT,外延材料利用金属有机物化学气相淀积技术生长.测试表明,该lmm栅宽器件栅长为0.8μm,输出电流密度达到1.16A/mm,跨导为241mS/mm,击穿电压＞80V,特征频率达到20GHz,最大振荡频率为28GHz.5.4GHz连续波测试下功率增益为14.2dB,输出功率达4.1W,脉冲条件测试下功率增益为14.4dB,输出功率为5.2W,两端口阻抗特性显示了在微波应用中的良好潜力.     

一个Ku波段高功率密度AlGaN/GaN HEMTs单片集成功率放大器

本文报道了一款工作于Ku波段的高功率密度单片集成功率放大器。该放大器采用金属有机化学气相淀积技术在2英寸半绝缘 4H-SiC衬底上生长0.2um AlGaN/GaN HEMTs工艺制作而成。在10%占空比的脉冲偏置Vds=25V,Vgs=-4V条件下,该单片放大器在12-14GHz频率范围内得到最大输出功率38dBm(6.3W),最高PAE 24.2%和线性增益6.4到7.5dB。以这种功率水平而论,该放大器的功率密度超过5W/mm。     

A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier

A high power density monolithic power amplifier operated at Ku band is presented utilizing a 0.3μm AlGaN/GaN HEMT production process on a 2-inch diameter semi-insulating（SI） 4H-SiC substrate by MOCVD. Over the 12-14 GHz frequency range,the single chip amplifier demonstrates a maximum power of 38 dBm（6.3 W）, a peak power added efficiency（PAE） of 24.2%and linear gain of 6.4 to 7.5 dB under a 10%duty pulse condition when operated at V_ds = 25 V and V_gs = -4 V.At these power levels,the amplifier exhibits a power density in excess of 5 W/mm.     

AlGaN/GaN HEMT器件的研制

介绍了AlGaN/GaNHEMT器件的研制及室温下器件特性的测试.漏源欧姆接触采用Ti/Al/Pt/Au ,肖特基结金属为Pt/Au .器件栅长为1μm ,获得的最大跨导为12 0mS/mm ,最大的漏源饱和电流密度为0 95A/mm .     

8W AlGaN/GaN HEMT功率器件的研制

报道了基于国产衬底以及国产外延的AlGaN/GaN HEMT X波段功率器件的研究进展.利用国产衬底以及外延材料,优化了器件栅场板的结构,研制成功栅长0.35μm,栅宽为lmm的微波功率器件.该器件输出电流密度达到0.83A/mm,击穿电压大于100V,跨导为236mS/mm,截止频率(fT)达到30GHz,最大振荡频率(fmax)为32GHz,8GHz下在片进行连续波测试,漏端电压为40V时测试得到功率增益4.9dB,输出功率达8W,功率附加效率(PAE)为45%.     

8W AlGaN/GaN HEMT功率器件的研制

报道了基于国产衬底以及国产外延的AlGaN/GaN HEMT X波段功率器件的研究进展.利用国产衬底以及外延材料,优化了器件栅场板的结构,研制成功栅长0.35μm,栅宽为lmm的微波功率器件.该器件输出电流密度达到0.83A/mm,击穿电压大于100V,跨导为236mS/mm,截止频率(fT)达到30GHz,最大振荡频率(fmax)为32GHz,8GHz下在片进行连续波测试,漏端电压为40V时测试得到功率增益4.9dB,输出功率达8W,功率附加效率(PAE)为45%.     

14.2 W/mm internally-matched AlGaN/GaN HEMT for X-band applications

High-performance X-band AlGaN/GaN high electron mobility transistor (HEMT) has been achieved by Γ-gate process in combination with source-connected field plate. Both its Schottky breakdown voltage and pinch-off breakdown voltage are higher than 100 V. Beside, excellent superimposition of direct current (DC) I-V characteristics in different V_ds sweep range indicates that our GaN HEMT device is almost current collapse free. As a result, both outstanding breakdown characteristics and reduction of current collapse effect guarantee high microwave power performances. Based upon it, we have developed an internally-matched GaN HEMT amplifier with single chip of 2.5 mm gate periphery, which exhibits power density of 14.2 W/mm with 45.5 dBm (35.5 W) output power and a power added efficiency (PAE) of 48% under V_ds = 48 V pulse operating condition at 8 GHz. To the best of our knowledge, it is the highest power density at this power level.     

Ka波段AlGaN/GaN HEMT栅结构仿真研究

为了研究适合Ka波段AlGaN/GaN HEMT的栅结构尺寸,借助二维器件仿真软件Silvaco Atlas,在完善仿真模型的基础上研究了Γ型栅各部分对AlGaN/GaN HEMT特性的影响,包括栅长与短沟道效应的关系、栅与沟道距离对短沟道效应和饱和漏电流的影响,以及栅金属厚度对fmax,栅场板对fT、fmax和内部电场的影响。根据典型器件结构和材料参数的仿真表明,为了提高频率并减轻短沟道效应,栅长应取0.15～0.25μm;减小栅与沟道的距离可略微改善短沟道效应,但会明显降低器件的饱和漏电流,综合考虑栅调制能力、饱和漏电流、短沟道效应三个方面,栅与沟道距离应取10～20nm;为了提高fmax,栅金属厚度应大于0.4μm;缩小栅场板长度可有效提高器件的频率,兼顾Ka波段应用和提高击穿电压,栅场板长度应在0.3～0.4μm左右。仿真得出的器件性能随结构参数的变化趋势以及尺寸数据对于Ka波段AlGaN/GaN HEMT的研究具有参考意义。     

蓝宝石衬底上输出功率密度为4.69W/mm的InAlN/GaN HEMT

We report high performance InAlN/GaN HEMTs grown on sapphire substrates. The lattice-matched InAlN/GaN HEMT sample showed a high 2DEG mobility of 1210 cm²/(V·s) under a sheet density of 2.6 × 10¹³ cm^-2. Large signal load-pull measurements for a (2 × 100 μm) × 0.25 μm device have been conducted with a drain voltage of 24 V at 10 GHz. The presented results confirm the high performances reachable by InAlN-based technology with an output power density of 4.69 W/mm, a linear gain of 11.8 dB and a peak power-added efficiency of 48%. This is the first report of high performance InAlN/GaN HEMTs in mainland China.     

A 4.69-W/mm output power density InAIN/GaN HEMT grown on sapphire substrate

We report high performance InAlN/GaN HEMTs grown on sapphire substrates.The lattice-matched InAlN/GaN HEMT sample showed a high 2DEG mobility of 1210 cm2/(V.s)under a sheet density of 2.6 ×1013 cm-2.Large signal load-pull measurements for a(2 × 100 μm)× 0.25 μm device have been conducted with a drain voltage of 24 V at 10 GHz.The presented results confirm the high performances reachable by InAlN-based technology with an output power density of 4.69 W/mm,a linear gain of 11.8 dB and a peak power-added efficiency of 48％.This is the first report of high performance InA1N/GaN HEMTs in mainland China.     

基于AlGaN/GaN HEMT的X波段内匹配功率合成放大器的设计

利用内匹配和功率合成技术设计了X波段AlGaN/GaN HEMT功率合成放大器.电路包含有四个AlGaN/GaN HEMT和制作在Al2O3陶瓷基片上的输入输出匹配电路.在偏置条件VDS=30 V,IDS=700 mA时8 GHz测出连续波饱和输出功率达到Pat=40 dBm(10 W),最大PAE=37.44%,线性增益9 dB.     

11.2 W/mm power density AlGaN/GaN high electron-mobility transistors on a GaN substrate

In this letter, high power density AlGaN/GaN high electron-mobility transistors (HEMTs) on a freestanding GaN substrate are reported. An asymmetric Γ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power performance. The breakdown voltage (BV) is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92 μm. A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 V. The maximum oscillation frequency (f_max) and unity current gain cut-off frequency (f_t) of the AlGaN/GaN HEMTs exceed 30 and 20 GHz, respectively. The results demonstrate the potential of AlGaN/GaN HEMTs on free-standing GaN substrates for microwave power applications.     

A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate

We report high performance InAlN/GaN HEMTs grown on sapphire substrates.The lattice-matched InAlN/GaN HEMT sample showed a high 2DEG mobility of 1210 cm²/（V·s） under a sheet density of 2.6×10¹³ cm^-2.Large signal load-pull measurements for a（2×100μm）×0.25μm device have been conducted with a drain voltage of 24 V at 10 GHz.The presented results confirm the high performances reachable by InAlN-based technology with an output power density of 4.69 W/mm,a linear gain of 11.8 dB and a peak power-added efficiency of 48%.This is the first report of high performance InAlN/GaN HEMTs in mainland China.     

最大振荡频率为200 GHz的蓝宝石衬底AlGaN/GaN HEMT

本文报道了fmax为200GHz的基于蓝宝石衬底的AlGaN/GaN 高电子迁移率晶体管（HEMT）。外延材料结构采用了InGaN背势垒层来减小短沟道效应,器件采用了凹栅槽和T型栅结合的工艺,实现了Ka波段AlGaN/GaN HEMT。器件饱和电流达到1.1A/mm,跨导为421mS/mm,截止频率（fT）为30GHz,最大振荡频率（fmax）为105GHz。采用了湿法腐蚀工艺将器件的Si3N4钝化层去除后,器件的Cgs和Cgd减小,器件截止频率提高到50GHz,最大振荡频率提高到200GHz。     

一个8 GHz基于AlGaN/GaN HEMT的内匹配电路

论述了一个在8 GHz下基于AlGaN/GaN HEMT功率放大器HMIC的设计、制备与测试.该电路包含了1个10×100 μm的AlGaN/GaN HEMT和输入输出匹配电路.在偏置条件为VDS=40 V、IDS=0.16 A时输出连续波饱和功率在8 GHz达到36.5 dBm(4.5 W),PAE为60%,线性增益10 dB;在偏置条件为VDS=30 V、IDS=0.19 A时输出连续波饱和功率在8 GHz达到35.6 dBm(3.6 W),PAE为47%,线性增益9 dB.     

最大振荡频率为200GHz的蓝宝石衬底AlGaN/GaN HEMT

报道了最大振荡频率为200 GHz的基于蓝宝石衬底的AlGaN/GaN高电子迁移率晶体管(HEMT).外延材料结构采用InGaN背势垒层来减小短沟道效应,器件采用凹栅槽和T型栅结合的工艺,实现了Ka波段AlGaN/GaNHEMT.器件饱和电流达到1.1 A/mm,跨导为421 mS/mm,截止频率(fT)为30 GHz...     

Hydrogen sensors based on AlGaN/AlN/GaN HEMT

Pt/AlGaN/AlN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt and Ti/Al/Ni/Au metals were evaporated to form the Schottky contact and the ohmic contact, respectively. The sensors can be operated in either the field effect transistor (FET) mode or the Schottky diode mode. Current changes and time dependence of the sensors under the FET and diode modes were compared. When the sensor was operated in the FET mode, the sensor can have larger current change of 8 mA, but its sensitivity is only about 0.2. In the diode mode, the current change was very small under the reverse bias but it increased greatly and gradually saturated at 0.8 mA under the forward bias. The sensor had much higher sensitivity when operated in the diode mode than in the FET mode. The oxygen in the air could accelerate the desorption of the hydrogen and the recovery of the sensor.     

X波段大栅宽高输出功率AlGaN/GaN HEMT的研究

利用MOCVD技术研制了国产SiC衬底的GaN HEMT外延材料,方块电阻小于260 Ω/□,迁移率最大值达到2 130 cm2V-1s-1,方块电阻和迁移率不均匀性小于3%,采用新的器件栅结构和高应力SiN钝化技术,降低了大栅宽器件栅泄漏电流,提高了工作电压.研制的总栅宽为25.3 mm的四胞内匹配器件X波段输出功率达到141.25 W,线性增益大于12 dB,PAE达到41.4%.