高效微带线聚合物电光调制器的研制

设计、制作并测试了1.55 m 光波长的微带线行波电极电光调制器。如果聚合物材料的电光系数33=30 pm/V,中心电极L 为20 mm,设计的调制器性能参数半波电压为6.70 V。用自主合成的发色团分子组成二阶非线性光学聚合物材料做为芯层制作的聚合物调制器,对调制器的各项性能参数进行了直流、低频和微波性能的测试,采用不同极化方法,在1.55 m 波长上测得低频半波电压分别为10.5 V(电晕极化)和4.9 V(接触极化),折算得芯层材料的电光系数分别为21 pm/V 和45 pm/V。测得消光比为24 dB。用矢量网络分析仪测试电极系统的微波性能,S 参数反映了此电极系统具有低的微波传输损耗和反射损耗。     

聚合物共面波导行波电极电光调制器

用聚合物材料BPAN-NT设计并初步成功制作了共面波导(CPW)行波电极电光调制器。用反应离子刻蚀(RIE)的方法制作脊波导,通过电晕极化使芯层有电光效应,利用电镀方法制作厚行波电极。对调制器的各项特性参数进行了测试,测得调制器的微波损耗系数0α=0.9 dB/cm.(GHz)1/2、在1.317μm波长上Vπ=250 V,由此算得芯层材料的电光系数3γ3=3.7 pm/V,同时测得消光比为13.49dB、插入损耗为18.6 dB,在8 GHz的微波频率上观察到了调制光信号,理论计算3 dB光调制带宽为43.77 GHz。     

基于电光聚合物缺陷光子晶体的脉冲电场测量技术

针对幅值强、频带宽、持续时间短等脉冲电场测量需求,本文提出一种基于电光聚合物缺陷光子晶体的全介质脉冲电场传感器.在周期性分布的光子晶体中引入电光聚合物作为缺陷层,外界电场的作用下,电光聚合物的折射率发生改变,这将会引起光子晶体的谐振频率偏移,监测谐振频率的变化即可实现被测电场测量.本文通过理论分析与数值模拟光入射角度不同且入射波的偏振状态不同时,光子晶体的结构参数对光子晶体传输光谱特征的影响规律,验证了该传感器的电场敏感特性.仿真结果表明,通过合理设计传感器的结构参数,结合波长-光强解调系统,基于电光聚合物缺陷光子晶体的电场传感器的电场分辨力可以达到约30V/m,最高可测量场强则可达到兆V/m量级.     

一种新型VLSI电路外部电光探测器

采用极化聚合物电光材料,设计制作出一种结构新颖的亚微米VLSI电路正面入射式外部电光探测器.通过在探测器中引入参考电极,实现了电压的标定测量;利用1 μm线宽指状电极的电场分布,验证了触立式极化聚合物电光探测器对电场具有较高的空间分辨率.实验证明,该新型外部电光探测器的空间分辨率可达0.5 μm,完全满足亚微米电路无损...     

一种新型VLSI电路外部电光探测器北大核心CSCD

采用极化聚合物电光材料,设计制作出一种结构新颖的亚微米VLSI电路正面入射式外部电光探测器。通过在探测器中引入参考电极,实现了电压的标定测量;利用1μm线宽指状电极的电场分布,验证了触立式极化聚合物电光探测器对电场具有较高的空间分辨率。实验证明,该新型外部电光探测器的空间分辨率可达0.5μm,完全满足亚微米电路无损探测的要求。     

用新型可交联极化聚合物材料制备的脊波导有机电光调制器

制备了一种全部以聚合物为波导材料的电光调制器 ,其中芯层为新型可交联极化聚胺脂电光功能材料 .旋涂制备波导薄膜、电晕极化产生非线性、光刻和氧反应离子刻蚀完成脊波导为主要的工艺步骤。 1.3μm光源光纤耦合输入脊波导调制器 ,得到很好的输出端单模近场图及清晰的低频调制信号     

基于SU-8材料的无源-有源集成式电光开关设计与制备

对基于SU-8紫外负性光刻胶的无源-有源集成 式电光开关进行了系统的研究。 首先用物理掺杂的方法制备出价格 低廉、性能良好的主客掺杂型电光材料DR1/SU-8,反射法测量其电光系数约为11. 5pm/V@1310nm。为减小器件的插入损耗, 设计了有源芯层为DR1/SU-8、无源芯层为SU-8的倒脊形混合集成式波导结构。制作完 CPW行波电极后,对器件进行接 触极化。实验测得开关的上升时间和下降时间分别为5.6μs和5.2μs,插入损耗为13.8dB,与只用DR1/SU-8作为波导芯层的 器件相比,插入损耗减小了约2.8dB。实验结果表明,这种无源-有 源集成式电光波导有效地减小了器件的插入损耗,为制备 低损耗的电光器件和单片多功能集成器件奠定了一定的基础。     

高灵敏度塑料光纤倏逝波传感器研究

为了提高塑料光纤倏逝波传感器的灵敏度,提出了一种新型结构的塑料光纤传感器,该传感器由光纤纤芯、包层和涂敷层三层构成.光纤包层和纤芯由标准塑料光纤的包层和纤芯材料构成,涂敷层由二甲苯稀释的加拿大树脂与TiO2纳米掺杂剂组成;光纤包层、纤芯和涂敷层的折射率阶跃增大,用于提高光纤表面发光强与透射深度.实验分析了 TiO2及涂...     

Mach-Zehnder型有机极化聚合物电光调制器

制备了一种以三层聚合物为波导材料的 Mach- Zehnder型电光调制器 ,其中芯层为新型可交联极化聚胺脂电光功能材料 .主要制备工艺为 :旋涂制备波导薄膜、电晕极化、光刻和氧反应离子刻蚀 .以 1.3μm和 1.5 5μm半导体激光器为光源 ,以光纤耦合输入脊波导调制器 ,从输出端得到很好单模近场图 ,其中从 Y型两分支波导输出的光强基本相同 .同时在示波器中得到清晰的调制信号 .     

Ridge Waveguide Electro-Optic Polymer Modulator with a New Kind of Corona Poled Crosslinkable Polyurethane

制备了一种全部以聚合物为波导材料的电光调制器,其中芯层为新型可交联极化聚胺脂电光功能材料．旋涂制备波导薄膜、电晕极化产生非线性、光刻和氧反应离子刻蚀完成脊波导为主要的工艺步骤。1.3μm光源光纤耦合输入脊波导调制器,得到很好的输出端单模近场图及清晰的低频调制信号．     

一种基于MEMS芯片的新型地面大气电场传感器

该文基于MEMS电场敏感芯片,研制出了一种新型的地面大气电场传感器,解决了现有场磨式电场仪易磨损、功耗大、故障率高等问题。敏感芯片采用SOIMUMPS加工工艺制备,其芯片面积仅为5.5 mm5.5 mm。该文提出了传感器敏感芯片的弱信号检测方法,设计出了满足环境适应性的传感器整体结构方案,并建立了传感器的灵敏度分析模型。对电场传感器进行测试,测量范围为-50 kV/m~50 kV/m,总不确定度为0.67%,分辨力达到10 V/m,功耗仅为0.62 W。外场试验结果表明,MEMS地面大气电场传感器在晴天和雷暴天的电场探测结果,与Campbell公司场磨式电场仪探测结果都有较好的一致性,说明该传感器能满足预测雷暴要求,实现雷电监测和预警功能。     

应用于EMC测量的集成光学电场传感器性能分析

依据集成光学电场传感器的工作原理,研制了可用于电磁兼容性测量的分段电极结构与锥形天线结构的电场传感器.测试结果表明:分段电极传感器频响范围为10 MHz～6 GHz,最小可测电场强度达到30 mV/m,在频率为200 MHz时,线性动态范围可达90 dB;锥形天线传感器频响范围为10 kHz～10 GHz,最小可测电场强度达到20 mV/m,在频率为1 GHz时,线性动态范围可达100 dB.     

Design of double and triple quantum wells for InGaAs-AlAsSbintersubband unipolar semiconductor lasers

InGaAs-AlAsSb double and triple quantum well (QW) structures were designed in an effort to shorten the wavelength to less than 2 μm for possible application to intersubband unipolar lasers. Wavelengths corresponding to the intersubband separation, the minimum and maximum operating electric field, optical-phonon-limited nonradiative scattering time, and escape time from the QW were simulated. It was found that suitable nonradiative transition times can be obtained by properly designing the coupling layer thickness for both kinds of QW's. The minimum wavelength is 1.5 μm and an operating electric field is above 130 kV/cm for wavelengths <2 μm in the double QW. On the other hand, the minimum operating electric field is less than 10 kV/cm and the minimum wavelength is about 1.7 μm for the triple QW. The triple QW is suitable for an electric-field induced wavelength tunable laser     

Design and Demonstration of Polarizing Polymer Waveguides Using Birefringent Polymers

TE-pass and TM-pass polarizing waveguides were fabricated by adjusting the birefringence properties of multi-layer stacks. The desired values of indices of refraction and birefringence were obtained by the proper selection and customization of core and cladding materials. The technique developed was used in the fabrication of waveguides in various design configurations such as etched ribs, backfilled trenches and photobleached channels. Both passive and active (electro-optic) core materials were successfully used in demonstrating the polarization extinction ratios as high as 61 dB. To our knowledge, this is the highest extinction ratio reported with polarizing polymer waveguides. In the case of electro-optic polymer waveguides, the designs were modified to enhance the electric field strength in the core without compromising the polarizing extinction ratios of the waveguides.     

高精度纳秒强电磁脉冲集成光学电场传感器性能分析

基于铌酸锂(LiNbO₃)结构研制了一种采用马赫-曾德尔干涉仪与领结天线的、可用于纳秒强电磁脉冲测量的高精度电场传感器。通过实验对传感器性能进行了验证,结果表明:该传感器在对纳秒电磁脉冲上升时间、下降时间与脉冲宽度的测量中,最大误差分别仅为3.9%、4.3%与0.3%,测量数据线性度达到0.9991,最小/最大可测电场强度分别达到3kV/m和50kV/m。     

大带宽集成光学电场传感器的频率响应特性分析

采用马赫-曾德尔光波导干涉仪与锥形天线阵列,研制了基于铌酸锂（LiNbO3）结构、可用于电力电场测量的大带宽电场传感器,并通过实验对传感器性能进行了测试。结果表明,该传感器在10kHz～18GHz的大带宽范围内,频响特性波动小于±10dB,最小可测电场强度达到0.4V/m,可测量场强达103V/m的纳秒脉冲电场。     

铌酸锂晶体结构对电场传感器灵敏度影响分析

铌酸锂晶体光学电场传感器为全介质结构,具有宽带宽、对被测电场干扰小的优点,但其灵敏度较低。因此,分析了晶体几何尺寸对传感器灵敏度的影响机理,得出通过增加沿外加电场方向的晶体尺寸同时减少晶体横截面上沿外加电场垂直方向的晶体尺寸来提高传感器的灵敏度。使用COMSOL仿真分析了铌酸锂晶体不同厚度、宽度、长度对晶体内部电场强度的影响,得出晶体厚度从15 mm减小到3 mm和宽度从3 mm增加到22 mm时,晶体内部电场强度分别提高约5.1倍和12.3倍;晶体长度从15 mm变化到55 mm时,晶体内部的电场强度变化仅约为5%。设计并研制出晶体尺寸分别为3 mm×3 mm×42.2 mm (x×y×z),3 mm×6 mm×42.2 mm (x×y×z),6 mm×6 mm×42.2 mm(x×y×z)的三只铌酸锂晶体电场传感器,并搭建工频电场测试平台,测试得出三只电场传感器的灵敏度分别为0.243 mV/(kV·m^-1)、0.758 mV/(kV·m^-1)、0.150 mV/(kV·m^-1)。当晶体厚度和长度一定且晶体宽度从3 ...     

Optical intensity modulators using diazo-dye-substituted polymerchannel waveguides

The electrooptic (EO) modulation of 1.32 μm laser light is measured in Mach-Zehnder channel waveguides fabricated with diazo-dye-substituted polymers with coplanar-waveguide (CPW) or microstrip (MS) electrodes. Two types of channel waveguide fabricated by photobleaching or O₂ reactive-ion etching (RIE) exhibit the same EO coefficients r₃₃ under the same poling condition. However, the photobleached waveguides show a lower half-wave voltage than the RIE-fabricated ones because of both the optical power concentration in a core layer and the existence of an EO active cladding layer. These tendencies are well explained by considering “effective” overlap integrals between the optical and electric fields, including the distribution of EO-active regions. The maximum r₃₃ value (26 pm/V) of the poled diazo-dye-substituted polymer is obtained with an RIE-fabricated MS-modulator     

Visible Human Utilization to Render Induced Electric Field and Current Density Images Inside the Human

The external and internal exposure to power frequency electromagnetic field, generated by high-voltage power transmission lines, raises serious safety concerns. Since we cannot measure the induced electric fields and current densities inside the human body, we used the Visible Human (VH) to investigate the induced electric fields and currents in human body tissues and organs of a worker standing 2 m away from conductor phase C of a double-circuit 132 kV transmission line. The double circuit 132 kV 60 Hz transmission line has a power rating of 293 MVA and a maximum recorded peak load current of 603 A. Charge simulation method and the Biot–Savart law have been used for computation of external electric and magnetic fields. Finite-difference time-domain technique was used to calculate the organs' internal induced electric field and circulating current densities in more than 40 different tissues of the VH with 3 mm voxel size. The simulation indicates that, at 2 m away from a 132 kV transmission line, the computed external electric field is 6.485 kV/m and the external magnetic field is 66.4 $mu$T, which are below the limits set by the IEEE standards for external exposure for live-line workers. The maximum induced electric fields in the brain and heart are 23 and 14 mV/m, respectively. These values are below the IEEE standard recommended limits of 53 mV/m for the brain and 943 mV/m for the heart. The VH data allowed us to obtain two- and three-dimensional images of the induced electric field and current density distribution in different organs, tissues, and cross-sections of the human body.