Design and fabrication of 25-channel 200 GHz AWG based on Si nanowire waveguides

A 25-channel 200 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of ?13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technologies, the devices are fabricated on silicon-on-insulator (SOI) substrate. This work has been supported by the National Key Research and Development Program of China (No.2016YFB0402504), and the National Natural Science Foundation of China (Nos.61435013 and 61405188). E-mail:zhangjiashun@semi.ac.cn      

基于SOI的16通道200GHz阵列波导光栅

设计并制作了基于绝缘体上硅(SOI)材料的1×16阵列波导光栅(AWG).该AWG器件的中心波长为1 550 nm,信道间隔为200 GHz,采用了脊型波导结构.首先确定了波导的结构尺寸以保证单模传输,并利用束传播法(BPM)模拟了波导间隔、弯曲半径和锥形波导长度等参数对器件性能的影响,对器件结构进行了优化,同时也利用BPM方法模拟了器件的传输谱.模拟结果显示:器件的最小信道损耗为4.64 dB,串扰小于-30 dB.根据优化的器件结构,通过光刻等半导体工艺制作了AWG,经测试得到AWG器件的损耗为4.52～8.1 dB,串扰为17～20 dB,能够实现良好的波分复用/解复用功能.     

用于单片集成的InP阵列波导光栅设计和制备

InP 阵列波导光栅(AWG)是InP 基单片多波长转换器中的重要单元。采用深脊型波导结构,设计了一种10通道、通道间隔200GHZ(1.6nm)的偏振无关型InP基阵列波导光栅。采用外延技术、光刻、感应耦合等离子体刻蚀技术等在实验室制造出了这种AWG。经过测试,插入损耗约为-8dB,串扰小于-17dB,中心通道和旁边通道的通道均匀性基本上在3dB左右。     

Si纳米线阵列波导光栅制备

采用绝缘层上Si(SOI)材料设计制备了3×5纳米线阵列波导光栅(AWG),器件大小为110μm×100μm。利用简单传输法模拟了器件的传输谱,并采用二维时域有限差分(FDTD)模拟中心通道输出光场的稳态分布,模拟结果表明,器件的通道间隔为11 nm,通道间的串扰为18 dB。通过电子束曝光(EBL)和感应耦合等离子(ICP)刻蚀制备了所设计的器件,光输出谱测试分析表明,器件中心通道的片上损耗为9 dB,通道间隔为8.36～10.40 nm,中心输出通道的串扰为6 dB。在误差允许范围内,设计和测试的结果一致。     

Flat-top silica-based arrayed waveguide grating with 40-channels

A wavelength multiplexer or demultiplexer plays ani mportant role in all wavelength division multiplexing( WDM) system.Silica-basedarrayed waveguide gratings(AWGs) offer attractive featuresinthis area due to theadvantage of large output channels and lowlo…     

8通道-1.6nm Si纳米线阵列波导光栅的设计与制作

设计了基于绝缘层上硅(SOI)材料的8通道Si纳米线阵列波导光栅(AWG),器件的通道间隔为1.6nm,面积为420μm×130μm。利用传输函数法模拟了器件传输谱,结果表明,器件的通道间隔为1.6nm,通道间串扰为17dB。给出了结合电子束光刻(EBL)和感应耦合等离子(ICP)刻蚀技术制备器件的详细流程。光谱测试结果分析表明,器件通道间隔为1.3～1.6nm,通道串扰为3dB,中心通道损耗为11.6dB。     

Crosstalk reduction in arrayed-waveguide grating multiplexer/demultiplexer using cascade connection

This paper proposes a cascade-connected arrayed-waveguide grating (AWG) as a solution to the problem of crosstalk accumulation in a large-scale AWG multiplexer/demultiplexer (MUX/DEMUX) and demonstrates a 64-channel cascaded AWG module with a very low background crosstalk of less than -80 dB and a total crosstalk of about -34 dB. In this paper, the authors densely integrate 64 additional compactly designed crosstalk-suppressing AWGs whose bandwidths were carefully optimized and directly attach them to a conventional 64-channel AWG. Consequently, in addition to a very low crosstalk, a low insertion loss and a compact size without passband shape distortion are achieved with this module. Based on the performance of the cascaded AWG module, it is then estimated that it is possible to realize a 1000-channel AWG MUX/DEMUX that is free from the problem of crosstalk accumulation.     

16 channel 200 GHz arrayed waveguide grating based on Si nanowire waveguides

A 16 channel arrayed waveguide grating demultiplexer with 200 GHz channel spacing based on Si nanowire waveguides is designed.The transmission spectra response simulated by transmission function method shows that the device has channel spacing of 1.6 nm and crosstalk of 31 dB.The device is fabricated by 193 nm deep UV lithography in silicon-on-substrate.The demultiplexing characteristics are observed with crosstalk of 5-8 dB,central channel’s insertion loss of 2.2 dB,free spectral range of 24.7 nm and average channel spacing of 1.475 nm.The cause of the spectral distortion is analyzed specifically.     

基于硅纳米线波导的16通道200GHz阵列波导光栅

设计了基于硅纳米线波导的16通道,通道间隔为200GHz的阵列波导光栅(AWG)。传输函数法模拟了器件传输谱,结果表明器件的通道间隔为1.6nm,通道间串扰为31dB。器件利用SOI材料,由193nm深紫外光刻工艺制备。光谱测试结果分析表明,通道串扰为5-8dB,中心通道损耗2.2dB,自由光谱区长度24.7nm,平均信道间隔1.475nm。详细分析了器件谱线畸变的原因。     

用于FBG解调的AWG芯片的设计、仿真与制备

设计、仿真并制备了一种用于光纤布拉格光栅(FBG)解调的阵列波导光栅(AWG)芯片。该芯片基于SOI衬底进行制备,并在AWG的输入/输出波导、阵列波导与平板波导之间采用双刻蚀结构进行优化。经仿真,该AWG的插入损耗为1.5dB,串扰小于 -20dB,3dB带宽为1.5nm。优化后的AWG芯片采用深紫外光刻技术、电感耦合等离子体等技术制备。经测试,该AWG的插入损耗为3dB,串扰小于 -20dB,3dB带宽为2.3nm。搭建了基于该AWG的解调系统,解调实验结果表明,该系统在0.8nm范围内的解调精度可达11.26pm,波长分辨率为6pm。     

Narrow-channel-spacing 32-channel AWG multiplexer with an innovative alignment method

A 32-channel 50 GHz spaced arrayed-waveguide grating（AWG） with our innovative configuration has been designed and fabricated. The performance of the device has been fully tested by using a system that consists of a tunable laser light source （TLS）, an optical power meter and a polarization controller. The insertion loss （IS） of the device is 4.2-7.4 dB. The crosstalk is about - 28 dB. The IS uniformity is less than 3.3 dB. With our configuration,the performance of the device has been enhanced effectively and the difficulty in alignment process has been decreased obviously.     

17×17信道光谱响应平坦化的聚合物阵列波导光栅的研制

选用氟化聚芳醚FPE聚合物材料,设计并制备出了17×17信道光谱响应平坦化阵列波导光栅（AWG）波分复用器. 实验测试结果表明,器件的中心波长为1550.83nm,波长间隔为0.8nm, 3dB带宽约为0.476nm,插入损耗为13~15dB,串扰低于-21dB.     

氟化聚合物光谱响应平坦化阵列波导光栅的优化设计和制备

本文基于阵列波导光栅(AWG)的传输理论,利用含氟聚合物(PFS-co-GMA)共聚物材料,对17×17信道光谱响应平坦化AWG波分复用器进行了参数优化.由于在聚合物阵列波导光栅器件的制备过程中,选用了反应离子刻蚀(RIE)工艺和蒸汽回溶技术,形成的梯形截面波导芯,使AWG传输的光产生相位移,导致传输光谱移动,引起串扰...     

50/100GHz AWG型光学梳状滤波器的设计与制备

以Si基SiO2平面光波导为基础,设计并制备了50/100GHz AWG型光学梳状滤波器．制备得到的AWG型光学梳状滤波器可以覆盖1520～1585nm的波长范围,共有160个信道．功率输出不均匀度＜0.5dB,插入损耗＜8dB,相邻通道的串扰＞13dB,在距离中心频率最远的信道,输出频率偏离ITU标准15GHz．分析了影响器件串扰和信道频率偏移的原因,并提出了相应的解决办法．     

Crosstalk reduction in N×N WDM multi/demultiplexers bycascading small arrayed waveguide gratings (AWG's)

This paper shows a new scheme which improves the crosstalk performance of large optical multi/demultiplexers, a key component in wavelength division multiplexing (WDM) systems. This scheme uses arrayed waveguide gratings (AWG's) of various sizes and requires no additional equipment. It is well known that a large multi/demultiplexer can be constructed by cascading small multi/demultiplexers. We have studied the impact of the number and size of AWG stages on crosstalk performance. This paper proves that to obtain a multistage multi/demultiplexer with minimum crosstalk, the total channel number of each AWG stage must be minimized. For example, cascading 10-channel AWG's and 11-channel AWG's improves the crosstalk performance of a 110-channel multi/demultiplexer by about 7.5 dB. Furthermore, the crosstalk performance degradation due to fabrication error is theoretically investigated taking channel bandwidth into account. Optimum design parameters of multistage AWG's are introduced: When the AWG suppression ratio is 30 dB and the ratio of channel bandwidth to channel spacing is about 0.24, the degradation in crosstalk performance due to fabrication error is minimized. The tradeoff between the crosstalk performance and the efficiency in terms of hardware and wavelength are also discussed. It is discovered that this simple scheme can yield a crosstalk-free WDM router. Crosstalk reduction obtained by this scheme allows the realization of flexible multiwavelength networks based on wavelength routing     

Ultra compact triplexing filters based on SOI nanowire AWGs

An ultra compact triplexing filter was designed based on a silicon on insulator(SOI) nanowire arrayed waveguide grating(AWG) for fiber-to-the-home FTTH.The simulation results revealed that the design performed well in the sense of having a good triplexing function.The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching.The experimental results showed that the crosstalk was less than -15 dB,and the 3 dB-bandwidth was 11.04 nm.The peak wavelength output from ports a,c,and b were 1455,1510 and 1300 nm,respectively,which deviated from our original expectations.The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion.     

Athermal Mach-Zehnder interferometer-synchronised arrayed waveguide grating multi/demultiplexer with low loss and wide passband

Described is a silica-based athermal 100 GHz-spacing 40-channel arrayed waveguide grating (AWG) with a Mach-Zehnder interferometer (MZI)-synchronised configuration that employs resin-filled grooves in the AWG and MZI. By suppressing the groove excess loss and using 1.5%-Delta waveguides, a low insertion loss of 3.2 dB and a wide 0.5 dB bandwidth of 45.9 GHz with athermal operation in the -5 to 65degC range and a compact chip size were achieved.     

Wavelength multiplexer based onSiO2-Ta2O5 arrayed-waveguide grating

The characteristics of a wavelength multiplexer based on an arrayed-waveguide grating are carefully investigated by using the grating theory and related experiments. A 28-channel multiplexer is designed and fabricated as SiO₂-Ta₂O₅ waveguides on a 1 cm×2 cm substrate. The designed wavelength channel spacing of 1 nm is obtained. The crosstalk to an adjacent channel is -15 dB. The measured minimum loss is 4.2 dB, which is composed of 3.4 dB excess loss and 0.8 dB grating loss     

Silica-based integrated optic Mach-Zehnder multi/demultiplexerfamily with channel spacing of 0.01-250 nm

A Mach-Zehnder (MZ) interferometer design is presented for application to wavelength-division multiplexed/frequency division multiplexed (WDM/FDM) systems. A variety of integrated-optic devices with low loss and low crosstalk, using silica-based waveguides, are demonstrated. MZ interferometers operate as multi/demultiplexers or frequency-selection switches. The channel spacing is determined by the waveguide arm length difference, and a spacing range of 1 GHz to 36 THz, corresponding to a wavelength spacing of 0.008-250 nm, is achieved. The devices for the WDM region have low fiber-to-fiber loss of 0.5 dB, and the devices for the FDM region have higher losses of 2-5 dB. Crosstalk of less than -15 dB was obtained for all the devices. A 5-GHz-spaced 16-channel frequency selection switch and a 10-GHz-spaced eight-channel multi/demultiplexer were also fabricated with a total loss of 5 dB and total crosstalk of -10 dB or less     

基于3 μm-SOI的波分复用/解复用器与电吸收型VOA的单片集成

波分复用/解复用器与可调光衰减器的是光通信系统中的重要元器件。为了得到制备工艺简单、响应速度快的二者的单片集成芯片,并且考虑到其与其他不同光器件的集成可能性,在绝缘体上硅材料制作了16通道、信道间隔200 GHz的阵列波导光栅复用/解复用器与电吸收型可调光衰减器的单片集成。该器件的片上损耗小于7 dB,串扰小于-22 dB。电吸收型VOA在20 dB的衰减量下的功耗为572 mW （106 mA,5.4 V）。此外,该器件可以实现光功率的快速衰减,在0~5 V的外加方波电压下,VOA上升及下降时间分别为50.5 ns和48 ns。