ITO／Al203复合透明导电膜的制备及光电性能

采用磁控溅射技术，在预先沉积有金属Al膜的玻璃衬底上制备了ITO薄膜。通过高温热处理，获得了透射率高、导电性能好的ITO/Al2O3复合透明导电膜。研究了不同Al薄膜厚度下ITO薄膜的晶体结构及其光、电性能，结果表明，当预沉积Al层厚度为40nm左右时，UTD的结晶质量得到提高，取向性能变好，电阻降低，而且在400-800mm范围内具有很高的可见光透过率。实验表明，通过改变预沉积Al膜的厚度，可以改变ITO薄膜最大透过率对应的波长，实现ITO预器件工作波长的匹配。     

ZnO 薄膜包装材料溅射制备工艺与阻隔性能研究

目的为了解决普通聚合物包装塑料对水、氧的阻隔能力不足,以及包装内容物货架时间短等问题,研究氧化锌(ZnO)沉积复合薄膜制备工艺与阻隔性能之间的关系,探索其应用于包装材料的可行性。方法采用射频磁控溅射技术(RF),以ZnO为靶材,在PET塑料表面沉积制备氧化锌薄膜包装材料,并详细分析射频溅射功率、沉积时间与工作气压对ZnO复合薄膜微观形貌、沉积速率以及阻隔性能的影响。结果当溅射功率为150 W,沉积时间为30 min,工作气压为0.8 Pa时,ZnO薄膜均匀且致密,阻隔能力最强,其氧气透过率(OTR)降低为1.23 m L/(m2·d),水蒸汽透过率(WVTR)降低为0.382 g/(m2·d)。与相同厚度下的PET原膜相比,所制备的ZnO高阻隔薄膜的透氧率降低了49.5倍,透湿率降低了17.6倍。结论射频溅射参数通过影响复合薄膜的微观形貌、致密程度、沉积速率以及沉积层厚度等方面对其阻隔能力会产生较大影响。     

室温下射频磁控溅射制备ZnO:Al透明导电薄膜及其性能研究

采用射频磁控溅射技术,在室温下,以ZnO:Al2O3(2%Al2O3(质量比))为靶材,在石英玻璃基底上,采用不同工艺条件制备了ZnO:Al(AZO)薄膜。使用扫描电子显微镜观察了薄膜的表面形貌,X射线衍射分析了薄膜的结构,四探针测量仪得到薄膜的表面电阻,轮廓仪测量了薄膜厚度,并计算了电阻率,最后采用分光光度计测量了薄膜的透过率;研究了溅射功率、溅射气压与薄膜厚度对薄膜电阻率及透过率的影响。结果表明:所制备的AZO薄膜具有(002)择优取向,并且发现薄膜厚度对薄膜的光电性能有明显影响,溅射气压和溅射功率对薄膜电学性能有较大影响,但是对薄膜透过率影响不大。当功率为1kW、溅射气压0.052Pa、AZO薄膜厚度为250nm时,其电阻率为8.38×10-4Ω·cm,波长在550nm处透过率为89%,接近基底的本底透过率92%。当薄膜厚度为1125 nm时薄膜的电阻率降至最低(6.16×10-4Ω·cm)。     

室温下射频磁控溅射制备ZnO∶Al透明导电薄膜及其性能研究

采用射频磁控溅射技术,在室温下,以ZnO∶Al203(2％Al2O3(质量比))为靶材,在石英玻璃基底上,采用不同工艺条件制备了ZnO∶Al(AzO)薄膜.使用扫描电子显微镜观察了薄膜的表面形貌,X射线衍射分析了薄膜的结构,四探针测量仪得到薄膜的表面电阻,轮廓仪测量了薄膜厚度,并计算了电阻率,最后采用分光光度计测量了薄膜的透过率;研究了溅射功率、溅射气压与薄膜厚度对薄膜电阻率及透过率的影响.结果表明:所制备的AZO薄膜具有(002)择优取向,并且发现薄膜厚度对薄膜的光电性能有明显影响,溅射气压和溅射功率对薄膜电学性能有较大影响,但是对薄膜透过率影响不大.当功率为1kW、溅射气压0.052 Pa、AZO薄膜厚度为250nm时,其电阻率为8.38×10-4Ω·cm,波长在550 nm处透过率为89％,接近基底的本底透过率92％.当薄膜厚度为1125 nm时薄膜的电阻率降至最低(6.16×10-4 Ω·cm).     

ITO/Al2O3复合透明导电膜的制备及光电性能

采用磁控溅射技术 ,在预先沉积有金属Al膜的玻璃衬底上制备了ITO薄膜。通过高温热处理 ,获得了透射率高、导电性能好的ITO/Al2 O3 复合透明导电膜。研究了不同Al薄膜厚度下ITO薄膜的晶体结构及其光、电性能 ,结果表明 ,当预沉积Al层厚度为 4 0nm左右时 ,ITO的结晶质量得到提高 ,取向性能变好 ,电阻降低 ,而且在 4 0 0 - 80 0nm范围内具有很高的可见光透过率。实验表明 ,通过改变预沉积Al膜的厚度 ,可以改变ITO薄膜最大透过率对应的波长 ,实现ITO预器件工作波长的匹配     

透明导电InSnGaMo氧化物薄膜光电性能研究

利用脉冲激光沉积法在石英衬底上制备出了可见光透过率高、电阻率极低的Ga,Mo共掺杂ITO基InSnGaMo复合氧化物薄膜。研究了衬底温度对薄膜结构、表面形貌、光电性能的影响。实验结果表明:衬底温度对InSnGaMo复合氧化物薄膜形貌、光电性能均有很大影响。X射线衍射、扫描电镜和霍尔测试结果表明,随着衬底温度的升高,薄膜晶粒度增大,电阻率快速下降,可见光平均透过率明显提高。当衬底温度为450℃时,InSnGaMo复合氧化物薄膜的电阻率最低为4.15×10-4Ω.cm,载流子浓度和迁移率最大分别为3×1020cm-3,45 cm2V-1s-1,在可见及近红外区平均透过率达92%,特别地,波长为362 nm时,最高透射率可达99%。     

TMA脉冲和吹扫时间对原子层沉积的氧化铝薄膜的影响

采用原子层沉积技术(ALD)进行Al_2O_3薄膜工艺研究,获得85℃低温Al_2O_3薄膜ALD的最佳工艺条件。使用椭偏仪测试厚度,使用扫描探针显微镜对薄膜表面形貌进行分析,使用紫外-分光光度计对薄膜的透过率进行分析,所用水汽透过率测试仪器是自行开发的基于钙电学法的测试仪器。分析了在85℃低温下的生长工艺条件对薄膜性能的影响,从前驱体脉冲时间,吹扫时间等工艺条件,对Al_2O_3薄膜的工艺条件进行优化。以三甲基铝(TMA)和H_2O为前驱体制备的Al_2O_3薄膜:沉积速率为0.1nm/cycle,表面粗糙度为0.46nm,对550nm波长光透过率为99.2%,薄膜厚度不均匀性为1.89%,200 nm的Al_2O_3薄膜的水汽透过率为1.55×10~(-4) g/m~2/day。     

磁控溅射制备增透ITO薄膜及其性能研究

用射频磁控溅射法在低温下制备了光电性能优良的ITO(In2O3:SnO2=1:1)薄膜。质量流量计调节氩气压强PAr为0.2～3.0Pa,氧流量fO2为0～10sccm,并详细探讨了溅射时PAr和fO2变化对ITO薄膜光学性能的影响。结果表明:fO2的改变引起薄膜中氧空位浓度变化而影响ITO薄膜折射率n;fO2对ITO靶材表面的溅射阀值和对Ar 散射而改变溅射速率。衬底表面粗糙度对ITO薄膜的折射率测量准确性有较大影响。PAr为0.8Pa,fO2为2.4sccm,薄膜厚度为241.5nm时,nmin=1.97,最大透过率为89.4%(包括玻璃基体),方阻为75.9?/□,电阻率为8.8×10-4?·cm。AFM分析表明薄膜表面针刺很少,表面平整(RMS=3.04nm)。     

衬底温度对柔性硫化锌薄膜结构与光学性能的影响北大核心CSCD

本文利用射频磁控溅射薄膜沉积技术在柔性聚酰亚胺(PI)、氧化铟锡(ITO)玻璃及石英玻璃衬底上制备了透明硫化锌(ZnS)薄膜。通过改变生长过程中的衬底温度,全面系统地研究了衬底温度对柔性和刚性ZnS薄膜的晶体结构、光透过率、光学常数以及表面性能影响的规律。研究表明升高衬底温度有利于形成ZnS薄膜(111)晶面的择优取向生长。不同衬底温度条件下制备的柔性和刚性ZnS薄膜在可见光波长范围内的平均光透过率均大于80%;在红外波长范围的平均光透过率达到85%。柔性ZnS薄膜在400 nm-890 nm波长范围内的光学折射率为2.21-2.56。刚性ZnS薄膜的光学折射率随着衬底温度的升高有所增加,当衬底温度为300℃时,刚性ZnS薄膜在890 nm波长处的折射率达到2.26。柔性ZnS薄膜厚度及表面粗糙度均随着衬底温度的升高而降低,当衬底温度为300℃时,柔性ZnS薄膜表面均方根粗糙度达到最小值2.99 nm。为实现高性能柔性ZnS光电器件,应控制生长柔性ZnS薄膜的衬底温度在200℃-300℃,以获得最优化的器件性能。     

纳米TiO2/ITO复合薄膜的光诱导亲水性研究

本文采用直流反应磁控溅射法及能量过滤磁控溅射技术,以玻璃为衬底制备了纳米TiO2薄膜和纳米TiO2/ITO复合薄膜.利用X射线衍射(XRD) 、扫描电镜(SEM) 、紫外-可见分光光度计(UV-VIS) 、椭偏光谱仪(VASE型)和接触角测定等手段对薄膜进行了表征.研究表明:纳米TiO2/ITO复合薄膜表面水的初始接触角较纳米TiO2薄膜明显减小,ITO膜层的存在抑制了光生载流子的复合,在紫外光照射5min后接触角迅速下降,紫外光照射30min后接近0°,亲水性较纳米TiO2薄膜有明显提高;应用能量过滤磁控溅射技术制备的薄膜晶粒尺寸减小至10nm左右,薄膜表面平整,吸收边波长"蓝移"至320nm;纳米TiO2/ITO复合薄膜在可见光波段的透过率下降至60%左右,较纳米TiO2薄膜的80%明显降低.     

ITO透明导电薄膜厚度与光电性能的关系

透明导电薄膜的厚度制约其光电性质。本研究利用磁控溅射技术制备了厚度变化范围为200-1500nm的ITO薄膜,探索了薄膜颜色、可见光透过率、面电阻与膜厚的关系。薄膜颜色随着膜厚的增加呈现有规律的变化,可见光透过率随薄膜厚度的增加而呈现振荡下降趋势,并出现了极大值(紫红色),振荡趋势可用多光束干涉解释;薄膜面电阻随膜厚的增加呈减小趋势,薄膜厚度为1387nm时,面电阻为1.3Ω/□,薄膜最小电阻率为1.8×10-4Ω.cm。文章给出了可以通过选择恰当的薄膜厚度,以尽可能满足透明导电薄膜面电阻、透过率两个相互矛盾的指标。     

Properties of Reactive Magnetron Sputtered ITO Films without in-situ Substrate Heating and Post-deposition Annealing

1. Introductiontransparent conductive indium tin oxide (ITO)films have been extensively used in a variety of electronic and opto--electronic applications because oftheir high transmission in the visible range, high infrared (IR) reflection, and low electrical resistivity.A variety of deposition techniques have been appliedto fabricate ITO films such as CVD, spray pyrolysisand sputteringll'2]. However, sputtering is the mostextensively used technique especially in industry. Recelltly, targe…     

Characterization of nanocrystalline indium tin oxide thin films prepared by ion beam sputter deposition method

Indium tin oxide (ITO) thin films were deposited on glass substrates by ion beam sputter deposition method in three different deposition conditions [(i) oxygen (O₂) flow rate varied from 0.05 to 0.20 sccm at a fixed argon (1.65 sccm) flow rate, (ii) Ar flow rate changed from 1.00 to 1.65 sccm at a fixed O₂ (0.05 sccm) flow rate, and (iii) the variable parameter was the deposition time at fixed Ar (1.65 sccm) and O₂ (0.05 sccm) flow rates]. (i) The X-ray diffraction (XRD) patterns show that the ITO films have a preferred orientation along (400) plane; the orientation of ITO film changes from (400) to (222) direction as the O₂ flow rate is increased from 0.05 to 0.20 sccm. The optical transmittance in the visible region increases with increasing O₂ flow rate. The sheet resistance (R_s) of ITO films also increases with increasing O₂ flow rate; it is attributed to the decrease of oxygen vacancies in the ITO film. (ii) The XRD patterns show that the ITO film has a strong preferred orientation along (222) direction. The optical transmittance in the visible spectral region increases with an increase in Ar flow rate. The R_s of ITO films increases with increasing Ar flow rate; it is attributed to the decrease of grain size in the films. (iii) A change in the preferred orientations of ITO films from (400) to (222) was observed with increasing film thickness from 314 to 661 nm. The optical transmittance in the visible spectral region increases after annealing at 200 °C. The R_s of ITO film decreases with the increase of film thickness.     

WO3电致变色薄膜制备过程中光学膜厚测量监控技术的研究

采用真空电子束蒸发方法制备WO3电致变色薄膜过程中，利用极值法光学膜厚测量技术监控薄膜的光学特性，对不同光学膜厚的WO3薄膜的原始态、着色态和退色态的光谱特性进行了对比分析。测试采用二电极恒电压方法，用分光光度计实时测量透过率的变化。结果证明以ITO玻璃作为比较片，极值法监控薄膜光学膜厚，当反射率达到第一极小值，即透过率达到第一极大值时，WO3薄膜得到最好的综合电致变色特性。     

甩胶喷雾热分解法制备ITO薄膜及光电性能研究

按In:Sn(物质的量比)=9:1,InCl3·4H2O和SnCl4·5H2O为前驱物,采用自制甩胶喷雾热分解制备薄膜装置在普通玻璃衬底上沉积了ITO薄膜,结果表明,采用自制甩胶喷雾热分解制备薄膜新装置成功制备出ITO薄膜。该装置结构简单、操作方便。制备ITO薄膜优化条件为:甩胶转速800r/min、衬底温度250℃、退火温度450℃、载气为空气、流量为7L/min、液体雾化速度0.2ml/min、雾粒速度3.5m/s。薄膜的沉积时间为5min,薄膜厚度约1000nm,最低电阻率为0.75*10-4Ω·cm,薄膜在可见光范围(波长在400-700nm)内平均透光率为87.2%。衬底温度在200℃以上时呈现立方相结构。     

Effect of the oxygen flow on the properties of ITO thin films deposited by ion beam assisted deposition (IBAD)

ITO films were deposited onto glass substrates by ion beam assisted deposition method. The oxygen ions were produced using a Kaufman ion source. The oxygen flow was varied from 20 until 60 sccm and the effect of the oxygen flow on properties of ITO films has been studied. The structural properties of the film were characterized by X-ray diffraction and atomic force microscopy. The optical properties were characterized by optical transmission measurements and the optical constants (refractive index n and extinction coefficient k) and film thickness have been obtained by fitting the transmittance using a semi-quantum model. The electrical properties were characterized by Hall effect measurements. It has been found that the ITO film with low electrical resistivity and high transmittance can be obtained with 40 sccm oxygen flow (the working pressure is about 2.3 × 10^− 2 Pa at this oxygen flow).     

致密ZnO薄膜的电化学制备及光学性能研究

采用电化学沉积法在ITO导电玻璃上沉积1层致密的ZnO薄膜。用扫描电镜（SEM）对在不同电解液浓度、电压和时间下制备的ZnO薄膜的表面形貌作了表征,并观测了ZnO薄膜的厚度,结果表明当电解液的质量分数为1.2%,电压为1.0V,时间为60s时,制备的ZnO薄膜致密且厚度仅为120nm,利用分光光度计测得ZnO薄膜在可见光波段的透射率高于50%,为ZnO薄膜在多层光学超材料中的应用奠定了基础。     

连续式离子层吸附与反应法沉积CuSCN薄膜及其微观结构、光学特性研究

采用乙二醇作溶剂,以连续式离子层吸附与反应法(SILAR)实现硫氰酸亚铜(CuSCN)薄膜在ITO、TiO2薄膜以及玻璃衬底上的沉积.通过X射线衍射、扫描电镜和紫外-可见光透过谱等手段表征薄膜结晶性、表面和断面微观形貌以及光学特性.结果表明,衬底以及溶剂性质均对SILAR法薄膜沉积过程存在重要影响.ITO衬底上获得的CuSCN薄膜更为致密,呈结晶态,而TiO2薄膜衬底上的CuSCN薄膜主要由颗粒组成,为非晶态.随沉积次数增加,薄膜表面粗糙度增大,光学透过率逐渐下降.在优化条件下(ITO衬底,20次沉积循环),所得CuSCN薄膜表面致密均匀,可见光透过率约60%.     

Effect of SiO2 buffer layer thickness on the properties of ITO/Cu/ITO multilayer films deposited on polyethylene terephthalate substrates

Transparent conductive ITO/Cu/ITO films were deposited on polyethylene terephthalate (PET) substrates with a SiO₂ buffer layer by magnetron sputtering using three cathodes at room temperature. The effect of the SiO₂ buffer layer thickness on the electrical and optical properties of ITO/Cu/ITO films was investigated. The ITO/Cu/ITO film deposited on the 40 nm thick SiO₂ buffer layer exhibits a sheet resistance of 143Ω/sq and transmittance of 65% at 550 nm wavelength. Highly transparent ITO/Cu/ITO films with a transmittance of 80% and a sheet resistance of 98.7Ω/sq have been obtained by applying −60 V substrate bias.     

Preparation of regularly structured nanotubular TiO2 thin films on ITO and their modification with thin ALD-grown layers

Nanotubular titanium dioxide thin films were prepared by anodization of titanium metal films evaporated on indium tin oxide (ITO) coated glass. A facile method to enhance the adhesion of the titanium film to the ITO glass was developed. An optimum thickness of 550 nm for the evaporated titanium was found to keep the film adhered to ITO during the anodization. The films were further modified by growing amorphous titania, alumina and tantala thin films conformally in the nanotubes by atomic layer deposition (ALD). The optical, electrical and physical properties of the different structures were compared. It was shown that even 5 nm thin layers can modify the properties of the nanotubular titanium dioxide films.