共查询到20条相似文献,搜索用时 250 毫秒
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综合利用射频和直流辉光放电的特点研制成功射频-直流等离子化学气相沉积设备。成功地用该设备制备出类金刚石薄膜。类金钢石薄膜的沉积速率随极板负偏压、气体工作压力的增加而增大。 相似文献
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CVD生长金刚石薄膜衬底负偏压增强成核效应 总被引:1,自引:0,他引:1
基于已经得到的实验结果的分析,本文较详细地讨论了低压化学气相沉积(CVD)金刚石薄膜过程中,衬底负偏压对金刚石成核的增强效应,明确阐述了负偏压增强成核的作用机理,并且讨论了这种效应作为提高金刚石在非金刚石衬底表面成核密度的一种方法所具有的优点以及存在的不足。 相似文献
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本文报道用反应气体SiF4和H2的微波等离子体化学气相沉积法低温(360℃)生长多晶Si(poly-Si)薄膜及其生长表面反应控制.实验发现,生长压力对晶粒的结晶取向有很大影响.改变SiF4与H2的流量比以选择等离子体中的活性集团,并结合外加偏压抑制带电粒子对薄膜生长表面的轰击是控制生长表面反应、制备高质量poly-Si薄膜的有效方法.用这种方法制备了H含量低达~1.0at.%、拉曼特征峰半高宽仅为~4.4 cm-1的poly-Si薄膜. 相似文献
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偏压对磁控溅射ZnO薄膜的成核机制及表面形貌演化动力学的影响 总被引:1,自引:0,他引:1
利用反应射频磁控溅射技术,通过对基体施加负偏压溅射ZnO薄膜,探讨了固定偏压下ZnO薄膜的表面形貌随沉积时间的演化以及不同偏压对ZnO薄膜表面形貌的影响. 研究结果表明,在-100V的偏压下,随着沉积时间的增加,ZnO薄膜的表面岛尺寸不断减小,密度逐渐变大. ZnO在基片表面成核过程中的本征缺陷成核阶段和轰击缺陷成核阶段的生长指数分别为(0.45±0.03)和(0.22±0.04),低速率成核过程基本消失;随着偏压增大,表面岛的尺寸变大,表面起伏增加. 偏压不但可以改变ZnO薄膜的成核和生长过程,而且影响薄膜的晶体取向. 相似文献
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类金刚石薄膜内应力的测试 总被引:2,自引:0,他引:2
采用射频-直流等离子增强化学气相沉积法制备出类金刚石薄膜,用弯曲法测定薄膜的内应力。结果表明,类金刚石薄膜中存在1~4.7GPa的压应力,沉积工艺对薄膜的内应力有很大的影响,薄膜的内应力随极板负偏压的升高而降低,陆C_2H_2气体含量的增加而增大。 相似文献
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以酒精为碳源,用热丝CVD法对不同表面状态的Al2O3衬底进行了金刚石薄膜沉积的比较,用扫描电镜,喇曼光谱和X射线衍射等方法检测了沉积出的金刚石膜的质量,并讨论了它们对成核和生长的影响。 相似文献
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Diamond films with fine grain size and good quality were successfully deposited on pure titanium substrate using a novel two-step growth technique in microwave plasma-assisted chemical vapor deposition (MWPCVD) system. The films were grown with varying the methane (CH4) concentration at the stage of bias-enhanced nucleation (BEN) and nano-diamond film deposition. It was found that nano-diamond nuclei were formed at a relatively high methane concentration, causing a secondary nucleation at the accompanying growth step. Nano-diamond film deposition on pure titanium was always very hard due to the high diffusion coefficient of carbon in Ti, the big difference between thermal expansion coefficients of diamond and Ti, the complex nature of the interlayer created during diamond deposition, and the difficulty in achieving very high nucleation density. A smooth and well-adhered nano-diamond film was successfully obtained on pure Ti substrate. Detailed experimental results on the synthesis, characterization and successful deposition of the nano-diamond film on pure Ti are discussed. 相似文献
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使用纳米金刚石粉研磨工艺预处理硅片衬底抛光面,在低气压成核的条件下,以丙酮和氢气为反应物,采用传统的热丝辅助化学气相沉积法,制备了自支撑金刚石膜;通过射频磁控溅射法沉积氧化锌薄膜在自支撑金刚石膜的成核面,形成氧化锌/自支撑金刚石膜结构.通过光学显微镜、扫描电镜及原子力显微镜测试自支撑金刚石膜成核面的表面形貌.研究结果表明:成核期的低气压有助于提高成核密度,成核面表面粗糙度约为1.5 nm;拉曼光谱显示1334 cm-1附近尖锐的散射峰与金刚石SP3键相对应,成核面含有少量的石墨相,且受到压应力的作用;ZnO/自支撑金刚石膜结构的XRD谱显示,氧化锌薄膜有尖锐的(002)面衍射峰,是c轴择优取向生长的. 相似文献
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Well-faceted polycrystalline diamond (PCD) films were deposited along with nanocrystalline diamond (NCD) films on the pure titanium substrate by a microwave plasma assisted chemical vapor deposition (MWPCVD) system in the environment of CH4 and H2 gases at a moderate temperature. Diamond film deposition on pure titanium and Ti alloys is always extremely hard due to the high diffusion coefficient of carbon in Ti, the big mismatch in their thermal expansion coefficients, the complex nature of the interlayer formed during diamond deposition, and the difficulty of attaining very high nucleation density. A well-faceted PCD film and a smooth NCD film were successfully deposited on pure Ti substrate by using a simple two-step deposition technique. Both films adhered well. Detailed experimental results on the preparation, characterization and successful deposition of the diamond coatings on pure Ti are discussed. Lastly, it is shown that smooth NCD film can be deposited at moderate temperature with sufficient diamond quality for mechanical and tribological applications. 相似文献
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A novel growth method for diamond nano-tips on porous anodic alumina (PAA) by hot filament chemical vapor deposition has been investigated for the first time. Before diamond film deposition could be carried out, nano-diamond particles were deposited onto the pore surface of PAA by electrophoretic deposition at the nucleation sites. Diamond nano-tips were then successfully formed by the shape of porous alumina. The results show that a diamond nano-tip with a smaller radius has superior effects of field emission. Its threshold field and current density are 1.2 V μm(-1) and 4.0 mA cm(-2), respectively, for the case of a tip radius of about 20-30 nm. 相似文献
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在引进的韩国微波等离子化学气相沉积(MPCVD)设备中,利用氢气和甲烷作为气源,在单面抛光的(100)单晶硅片上研究了不同的形核温度和生长温度条件下制备出金刚石薄膜。通过Raman光谱、XRD光谱和扫描电子显微镜(SEM)对制备的金刚石膜的质量进行表征。研究结果表明,形核温度和生长温度对金刚石膜的生长均有影响。形核温度过低会增大薄膜中的非金刚石相的含量,促使二次形核增加,降低了金刚石薄膜质量。随着生长温度的升高,金刚石中非金刚石相含量越少,金刚石的质量提高,但金刚石的晶面同时也被大量刻蚀。 相似文献
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用热丝CVD的方法在3英寸的硅衬底上生长均匀的金刚石薄膜。应用了在热丝上方加石黑电极,在形核阶段相对于热丝施加一直流负偏压的预处理方法,使金刚石的成核密度达到10^10-10^11/cm^2,在3英寸镜面抛光的硅衬底上制备了平整的金刚石薄膜,生长的薄膜用SEM及喇曼光谱进行了测试。实验发现电极的位置是影响金刚石薄膜均匀性的重要因素。 相似文献
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红外光学材料硫化锌衬底上沉积金刚石膜的研究 总被引:2,自引:0,他引:2
采用微波等离子体化学气相沉积法,在预镀陶瓷过渡层的硫化锌衬底上沉积金刚石膜。在以前的实验中,我们发现在陶瓷过渡层上沉积金刚石膜极其困难,但采用金刚石诱导形核方法后,我们已经在过渡层/硫化锌试样表面获得了很小面积(约1mm宽的环状区域)的金刚石形核。本文对前期的诱导形核工作进行了一定改进,目前已经使形核生长范围大大增加,沉积面积超过原来10倍。此外,本文对金刚石/过渡层/硫化锌试样的红外透过特性以及金刚石膜质量等进行了评价。 相似文献