Effect of Ni<Superscript>2+</Superscript> substitution on crystal structure and microwave dielectric properties for MgZrNb<Subscript>2</Subscript>O<Subscript>8</Subscript> ceramics

Monoclinic structured Mg_1?xNi_xZrNb₂O₈ (0?≤?x?≤?0.12) ceramics were synthesized for the first time through traditional solid-state reaction process and pure phase were obtained in all range. Rietveld refinement was used to analyze the crystal structure. With the increase of Ni²⁺ substitution amount, ε _r decreased, Q?×?f rose first then fell, τ _f shifted for the positive direction. Bond ionicity, lattice energy and bond energy were separately calculated to investigate the correlations with microwave dielectric properties. Typically, ceramics samples with the composition of Mg_0.92Ni_0.08ZrNb₂O₈ sintered at 1280 °C for 4 h exhibited the optimum microwave dielectric properties: ε _r ?=?24.58, Q?×?f?=?74534.1 GHz, τ _f ?=???49.11 ppm/°C, which could be a promising material for application.     

Influence of Nd doping on microwave dielectric properties of SrTiO<Subscript>3</Subscript> ceramics

Sr_1?x Nd _x TiO₃ (x?=?0.08–0.14) ceramics were prepared by conventional solid-state methods. The analysis of crystal structure suggested Sr_1?x Nd _x TiO₃ ceramics appeared to form tetragonal perovskite structure. The relationship between charge compensation mechanism, microstructure feature and microwave dielectric properties were investigated. Trivalent Nd³⁺ substituting Sr²⁺ could effectively decrease oxygen vacancies. This reduction and relative density were critical to improve Q?×?f values of Sr_1?x Nd _x TiO₃ ceramics. For ε _r values, incorporation of Nd could restrain the rattling of Ti⁴⁺ cations and led to the reduction of dielectric constant. The τ _f values were strongly influenced by tilting of oxygen octahedral. The τ _f values decreased from 883 to 650 ppm/°C with x increasing from 0.08 to 0.14. A better microwave dielectric property was achieved for composition Sr_0.92Nd_0.08TiO₃ at 1460 °C: ε _r ?=?160, Q?×?f?=?6602 GHz, τ _f ?=?883 ppm/°C.     

Crystal structure,microstructure and microwave dielectric properties of novel MgAl<Subscript>2</Subscript>Ti<Subscript>3</Subscript>O<Subscript>10</Subscript> ceramic

In the present work, a novel MgAl₂Ti₃O₁₀ ceramic was obtained using a traditional solid-state reaction method. X-ray diffraction and energy dispersive spectrometer showed that the main MgAl₂Ti₃O₁₀ phase was formed after sintered at 1300–1450 °C. With rising the sintering temperature from 1300 to 1450 °C, the bulk density (ρ), relative permittivity (ε _r ) and Q?×?f value firstly increased, reached the maximum values (3.61 g/cm³, 14.9, and 26,450 GHz) and then decreased. The temperature coefficient of resonator frequency (τ _f ) showed a slight change at a negative range of ??94.6 to ??83.7 ppm/°C. When the sintering temperature was 1400 °C, MgAl₂Ti₃O₁₀ ceramics exhibited the best microwave dielectric properties with Q?×?f?=?26,450 GHz, ε _r ?=?14.9 and τ _f ?=???83.7 ppm/°C.     

Low temperature sintering and microwave dielectric properties of Zn<Subscript>3</Subscript>Mo<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramic

Crystal structure and dielectric properties of Zn₃Mo₂O₉ ceramics prepared through a conventional solid-state reaction method were characterized. XRD and Raman analysis revealed that the Zn₃Mo₂O₉ crystallized in a monoclinic crystal structure and reminded stable up to1020 °C. Dense ceramics with high relative density (~ 92.3%) were obtained when sintered at 1000 °C and possessed good microwave dielectric properties with a relative permittivity (ε _r ) of 8.7, a quality factor (Q?×?f) of 23,400 GHz, and a negative temperature coefficient of resonance frequency (τ _f ) of around ??79 ppm/°C. With 5 wt% B₂O₃ addition, the sintering temperature of Zn₃Mo₂O₉ ceramic was successfully lowered to 900 °C and microwave dielectric properties with ε _r ?=?11.8, Q?×?f?=?20,000 GHz, and τ _f = ??79.5 ppm/°C were achieved.     

Effect of sintering temperature on microstructures and microwave dielectric properties of Ba<Subscript>2</Subscript>MgWO<Subscript>6</Subscript> ceramics

The microwave dielectric properties of Ba₂MgWO₆ ceramics were investigated with a view to the use of such ceramics in mobile communication. Ba₂MgWO₆ ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (? _r ) of 16.8–18.2 and unloaded quality factor (Q _u  × f) of 7000–118,200 GHz were obtained at sintering temperatures in the range 1450–1650 °C for 2 h. A maximum apparent density of 6.76 g/cm³ was obtained for Ba₂MgWO₆ ceramic, sintered at 1650 °C for 2 h. A dielectric constant (? _r ) of 18.4, an unloaded quality factor (Q _u  × f) of 118,200 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?34 ppm/°C were obtained when Ba₂MgWO₆ ceramics were sintered at 1650 °C for 2 h.     

Low temperature sintering and microwave dielectric properties of Li<Subscript>6</Subscript>Mg<Subscript>7</Subscript>Ti<Subscript>3</Subscript>O<Subscript>16</Subscript> ceramics with LiF additive for LTCC applications

Li₆Mg₇Ti₃O₁₆ ceramics were prepared by the conventional solid-state method with 1–5 wt% LiF as the sintering aid. Effects of LiF additions on the phase compositions, sintering characteristics, micro-structures and microwave dielectric properties of Li₆Mg₇Ti₃O₁₆ ceramics were investigated. The LiF addition could effectively lower the sintering temperature of Li₆Mg₇Ti₃O₁₆ ceramics from 1550 to 900 °C. For different LiF-doped compositions, the optimum dielectric permittivity (ε _r ) and quality factor (Q·f) values first increased and then decreased with the increase of LiF contents, whereas the temperature coefficient of resonant frequency (τ _f ) fluctuated between ??14.39 and ??8.21 ppm/°C. Typically, Li₆Mg₇Ti₃O₁₆ ceramics with 4 wt% LiF sintered at 900 °C exhibited excellent microwave dielectric properties of ε _r ?=?16.17, Q·f?=?80,921 GHz and τ _f ?=???8.21 ppm/°C, which are promising materials for the low temperature co-fired ceramics applications.     

Enhancing the microwave dielectric properties of Sr<Subscript>2</Subscript>Ca<Subscript>3</Subscript>Ta<Subscript>4</Subscript>TiO<Subscript>17</Subscript> ceramics by Zr Substitution

The compositions in Sr₂Ca₃Ta₄Ti_1?xZr_xO₁₇ (0?≤?x?≤?0.12) series were designed and fabricated by solid state sintering method. All the compositions formed single phases and crystallized in an orthorhombic crystal structure. Zr substitution led to the enhancing of the microwave dielectric properties by tuning the τ_f value through zero and increased the Q_uf_o value from 12,540 to 14,970 GHz with a slight decrease in ε_r. In the present study, a good combination of ε_r ~?51, Q_uf_o ~?145,43 GHz and τ_f ~ 3 ppm/°C were obtained for Sr₂Ca₃Ta₄Ti_0.90Zr_0.1O₁₇ ceramic sintered at 1575 °C for 4 h.     

A new niobate-based CaO–2CuO–Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> microwave dielectric ceramic composite for LTCC applications

A novel CaO–2CuO–Nb₂O₅ (CCN) ceramic composite was prepared by the solid-state reaction method in the temperature range of 810–890 °C. Typically, the CCN sintered at 870 °C exhibited the excellent microwave properties of ε _r ?=?15.7, Q?×?f?=?28,700 GHz, τ _f = ? 38.4 ppm/°C. The τ _f of CCN was turned to be near zero by adding TiO₂, while the ε _r increased slightly and the Q?×?f decreased. The 0.91CCN–0.09TiO₂ ceramic sintered at 920 °C showed modified properties of ε _r ?=?16.9, Q?×?f?=?21,500 GHz, τ _f = ? 1.6 ppm/°C, which shows potential in LTCC applications.     

The calorimetry and thermodynamic functions of Nd Mg<Stack><Subscript>3</Subscript><Superscript>I</Superscript></Stack>Mn<Subscript>4</Subscript>O<Subscript>12</Subscript> (Me<Superscript>I</Superscript>-Li,Na, K) manganites in the range from 298.15 to 673 K

The ceramic technology is employed for synthesizing manganites of composition Nd Mg ₃ ^I Mg₃Mn₄O₁₂(Me^I-Li, Na, K). The X-ray technique is used to find that the compounds crystallize in tetragonal syngony. The parameters of their crystal lattices are determined. Their heat capacities are experimentally determined in the range from 298.15 to 673 K, which enables one to reveal second-order phase transitions. In view of these transitions, equations describing the C _p ^° ～ f(T) dependence are derived, and the thermodynamic functions C _p ^° (T), H°(T)-H°(298.15), S°(T), and Φ ^xx (T) are calculated.     

Mechanism of <Emphasis Type="Italic">p-n</Emphasis> junction breakdown at high reverse voltage ramps

It is shown that flat tunneling-assisted impact ionization fronts in p-n junctions operating at a high buildup rate (ramp) u of the reverse voltage can be obtained provided that the rate g_f of the tunneling generation of electron-hole pairs is much greater than the impact ionization rate g_i in the initial stage of breakdown. Usually (e.g., in silicon) g_f?g_i and, therefore, the multiplication of the first hundreds of electron-hole pairs due to the impact ionization leads to the avalanche-streamer transition much before the overlap of avalanches. In this case, the diode transition to the conducting state may be caused by the interelectrode gap shortage by a large number of streamers, the total resistance of which can be much smaller than the load resistance. A simple model of such a “multistreamer” breakdown is proposed according to which the switching time is virtually independent of the streamer parameters and is inversely proportional to u. The diode resistance in the conducting state significantly drops with increasing ramp u and grows with increasing velocity of streamers.     

Heat Capacity and thermodynamic functions of DyMe<Superscript>II</Superscript>Cr<Subscript>2</Subscript>O<Subscript>5.5</Subscript>(Me<Superscript>II</Superscript>-Mg,Ca) in the range from 298.15 to 673 K

The calorimetric method is used to investigate the heat capacity of DyMe^IICr₂O_5.5(Me^II-Mg, Ca) chromites in the range from 298.15 to 673 K. The C _p ⁰ ～ f(T) curves exhibit λ-like effects at 348 and 548 K for DyMgCr₂O_5.5 and at 473 K for DyCaCr₂O_5.5, which apparently relate to second-order phase transitions. The temperature dependences are calculated for thermodynamic functions C _p ⁰ (T), H ⁰(T)-H ⁰(298.15), S ⁰(T), and Φ**(T).     

4<Emphasis Type="Italic">H</Emphasis>-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers

High-voltage (1600 V) diodes based on epitaxial 4H-SiC p⁺⁺–p⁺–n₀–n⁺ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4H-SiC of p type is experimentally estimated for the first time: v _sp = 3 × 10⁶ cm/s.     

Critical Behavior of La<Subscript>0.67</Subscript>Ba<Subscript>0.33</Subscript>Mn<Subscript>0.95</Subscript>Fe<Subscript>0.05</Subscript>O<Subscript>3</Subscript> Manganite

The critical behavior of perovskite manganite La_0.67Ba_0.33Mn_0.95Fe_0.05O₃ at the ferromagnetic–paramagnetic has been analyzed. The results show that the sample exhibited the second-order magnetic phase transition. The estimated critical exponents derived from the magnetic data using various such as modified d’Arrott plot Kouvel–Fisher method and critical magnetization M(T _C, H). The critical exponents values for the La_0.67Ba_0.33Mn_0.95Fe_0.05O₃ are close to those expected from the mean field model β = 0.504 ± 0.01 with T _C = 275661 ± 0.447 (from the temperature dependence of the spontaneous magnetization below T _C ), γ = 1.013 ± 0.017 with T _C = 276132 ± 0.452 (from the temperature dependence of the inverse initial susceptibility above T _C ), and δ = 3.0403 ± 0.0003. Moreover, the critical exponents also obey the single scaling equation of M(H, ε) = |ε| ^β f _±(H/|ε| ^β+γ ).     

Temperature effect on the photoluminescence intensity and Eu<Superscript>2+</Superscript> excited state lifetime in EuGa<Subscript>2</Subscript>S<Subscript>4</Subscript> and EuGa<Subscript>2</Subscript>S<Subscript>4</Subscript>:Er<Superscript>3+</Superscript>

The photoluminescence (PL) spectra and Eu²⁺ excited state lifetime of EuGa₂S₄ and EuGa₂S₄:Er³⁺ have been studied in the range 78–500 K. The spectra show a band at 545 nm, due to the 4f ⁶5d → 4f ⁷(⁸ S _7/2) transition. With increasing temperature, the full width at half maximum Γ(T) of the PL band of EuGa₂S₄ and EuGa₂S₄:Er³⁺ crystals increases from 0.15 to 0.22 and from 0.13 to 0.19 eV, respectively. Over the entire temperature range studied, Γ(T) is a linear function of T ^1/2. The 545-nm emission intensity and Eu²⁺ excited state lifetime in EuGa₂S₄ and EuGa₂S₄:Er³⁺ vary exponentially with temperature. The luminescence quenching energies evaluated from the Arrhenius plots of I(10³/T) and τ(10³/T) coincide (0.10 eV) within the error of determination.     

Scaling behavior of dynamic hysteresis in Bi<Subscript>3.15</Subscript>Nd<Subscript>0.85</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ceramics

The scaling behavior of dynamic hysteresis was investigated in Bi_3.15Nd_0.85Ti₃O₁₂ bulk ceramics at a frequency of 1–1000 Hz and an external electric field amplitude of 79–221 kV/cm. The scaling behavior at low amplitude (E ₀ ≤ 114 kV/cm) takes the form of \(\langle A \rangle \propto f^{ - 0.013} E_{0}^{0.7}\) for low frequency (f ≤ 200 Hz) and \(\langle A \rangle \propto f^{ - 0.013} E_{0}^{0.22}\) for high frequency (f > 200 Hz), where \(\langle A \rangle\) is the area of hysteresis loop and f and E ₀ are frequency and amplitude of external electric field, respectively. At high amplitude (E ₀ > 114 kV/cm), we obtain \(\langle A \rangle \propto f^{0.011} E_{0}^{1.163}\) at low frequency and \(\langle A \rangle \propto f^{ - 0.015} E_{0}^{0.7}\) at high frequency. At low E ₀, the contribution to the scaling relation mainly results from reversible domain switching, while at high E ₀ reversible and irreversible domain switching concurrently contribute to the scaling relation.     

Electronic and Ferromagnetic Properties of 3<Emphasis Type="Italic">d</Emphasis>(V)-Doped (BaS) Barium Sulfide

The objective of this study is to investigate the electronic structure and ferromagnetic properties of barium sulfide (BaS) doped with vanadium (V) impurity. The calculations were performed by using the first-principle calculations of density functional theory. The lattice constant of Ba_1?x V _x S decreases with increasing concentration (x) of the V atom. We have found that the Ba_0.75 V _0.25S and Ba_0.5 V _0.5S compounds are half-metallic ferromagnets with total magnetic moments of 3 μ _B per V atom, while for high concentration x = 0.75, the Ba_0.25 V _0.75S becomes nearly half metallic due to broadening of 3d (V) states in the gap. The exchange coupling between the 3d (V) levels and conduction bands is ferromagnetic, confirming the magnetic nature of Ba_1?x V _x S compounds.     

Photoluminescence of Ga<Subscript>2</Subscript>S<Subscript>3</Subscript>:Eu nanocrystals

The photoluminescence (PL) of Ga₂S₃-5 mol % Eu₂O₃ nanocrystals prepared by mechanical comminution of the initial compound has been studied in the temperature range from 77 to 300 K. It is established that the PL spectrum of nanocrystals, in comparison to that of a massive sample, extends over a broader wavelength interval (430–620 nm) and has two maxima (at 507 and 556 nm) instead of one. The intensity of emission from nanocrystals is significantly higher than that from the massive crystal. The halfwidth in both cases varies with the temperature in proportion to T ^1/2. The intensity of emission at 556 nm for nanocrystals depends on the temperature as lgI ～ 1/T, this dependence having three linear portions corresponding to an activation energy of 0.04, 0.16, and 0.43 eV. The PL bands with maxima at 507 and 556 nm are assigned to the intracenter 4f ⁶5d4f ⁷ transitions in Eu²⁺ ions.     

On VLSI interconnect optimization and linear ordering problem

Some well-known VLSI interconnect optimizations problems for timing, power and cross-coupling noise immunity share a property that enables mapping them into a specialized Linear Ordering Problem (LOP). Unlike the general LOP problem which is NP-complete, this paper proves that the specialized one has a closed-form solution. Let f(x,y):?²→? be symmetric, non-negative, defined for x≥0 and y≥0, and let f(x,y) be twice differentiable, satisfying ? ² f(x,y)/?x?y<0. Let π be a permutation of {1,…,n}. The specialized LOP comprises n objects, each associated with a real value parameter r _i , 1≤i≤n, and a cost f(r _i ,r _j ) associated to any two objects if |π(i)?π(j)|=1,1≤i,j≤n, and f(r _i ,r _j )=0 otherwise. We show that the permutation π which minimizes \(\sum_{i= 1}^{n - 1} f( r_{\pi^{ - 1}( i )},r_{\pi^{ - 1}( i + 1 )} )\), called “symmetric hill”, is determined upfront by the relations between the parameter values r _i .     

Microwave dielectric properties of Sr<Subscript>0.7</Subscript>Ce<Subscript>0.2</Subscript>TiO<Subscript>3</Subscript>–Sr(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> ceramics

xSr_0.7Ce_0.2TiO₃–(1???x)Sr(Mg_1/3Nb_2/3)O₃ ceramics, referred to xSCT–(1???x)SMN, were successfully produced by conventional solid-state sintered technology. The compounds, belonging to perovskites with a secondary phase of CeO₂, can be detected even with x down to 0.1 of SCT composition. The overall trend for grain growth illustrates the increase with increasing SCT doping level. The Raman peak at 825 cm^?1 splits into two peaks and causes red shift phenomenon. XPS spectra indicate that Ti and Nb ions exist respectively in tetravalence and pentavalence, and Ce ions exist in trivalence and tetravalence. Dielectrics constant (ε _r ) of SCT–SMN ceramics gradually increases with increasing theoretical dielectric polarizabilities. A wider width of the 825 cm^?1 for FWHM of A_1g mode Raman peaks suggests to a lower Q?×?f value. The increasing tolerance factor in agreement with temperature coefficient of resonant frequency (τ _f ), denotes that the rise of perovskite symmetry. The 0.1SCT–0.9SMN ceramic sintered at 1450?°C for 4 h illustrates excellent microwave dielectric properties with ε _r ?~?35.4, Q?×?f?~?11282 GHz and τ _f ?~?1.7 ppm/°C. Activation energies of 0.1SCT–0.9SMN ceramic at 100, 300 and 500 V, are ~0.436, 0.427 and 0.331 eV, respectively, indicative of a decreased trend with external electric field.     

Predicting the tensile behaviour of adhesively bonded sheets using equivalent geometrical heterogeneities

In the present work, the formability of adhesively bonded sandwichsteel sheets is predicted during tensile tests, with the help of equivalent geometrical heterogeneities in the base sheets, without incorporating adhesive layer and properties during modelling simulations. This will help us mainly to overcome the difficulties while incorporating adhesion/adhesive properties during formability simulation and prediction. The limit strains during the tensile test are predicted and validated with experiments. The effect of hardener to resin (H/R) ratios of adhesive on the forming limit strains has been predicted with a set of thickness heterogeneity factor ‘f’ and size (w) of the defect, located in the base material. In other words, a relationship between defect morphology (f, w) and adhesive properties has been evaluated. For example, in the case of rectangular-infinite groove of width, w?=?0.5 mm, the limit strains of DDQ steel evaluated during tensile tests at f?=?0.912, f?=?0.9137, f?=?0.924, f?=?0.927, and f?=?0.95 are equivalent to the H/R ratios of 0.6:1, 0.7:1, 0.8:1, 0.9:1, and 1:1 of adhesive, respectively. The limit strains are predicted in the same manner with a square hole and finite square defect in the base material. It is suggested that the overall forming (tensile) behaviour of adhesively bonded blanks (ABB) can be predicted with the help of a thickness heterogeneity factor (or similar geometrical heterogeneities) that is equivalent to all the geometrical and structural heterogeneities in the whole bonded sheets.