Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition

Growing Ga₂O₃ dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga₂O₃ nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to the typical synthesis temperature of above 1,000°C as reported by other methods. In this work, the prepared β-Ga₂O₃ nanowires are mainly composed of Ga and O elements with an atomic ratio of approximately 2:3. Importantly, they are highly crystalline in the monoclinic structure with varied growth orientations in low-index planes. The bandgap of the β-Ga₂O₃ nanowires is determined to be 251 nm (approximately 4.94 eV), in good accordance with the literature. Also, electrical characterization reveals that the individual nanowire has a resistivity of up to 8.5 × 10⁷ Ω cm, when fabricated in the configuration of parallel arrays, further indicating the promise of growing these highly insulating Ga₂O₃ materials in this III-V nanowire-compatible growth condition.

PACS

77.55.D; 61.46.Km; 78.40.Fy     

The obtaining of high-density specimens and analysis of mechanical strength characteristics of a composite based on ZrO2-WC nanopowders

The structures, processes of shrinkage, and phase composition of the compact system ZrO₂-WC, obtained by hot pressing with the transmission of high current, are considered in the article. We found that as a result of compaction, the ZrO₂-WC-ceramics have uniform density distribution, with the following optimal mode consolidation values T = 1,350°C, P = 30 MPa and t = 2 min. These conditions allow us to achieve the best combination of ceramic properties by criteria density and strength.     

CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure

Cu₂ZnSnSe₄ (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe thin films during selenization without a source of tin. The loss of Sn from CZTSe thin films in selenization was suppressed herein using a tin source at 400°C (A2) or 530°C (A3). A copper-poor and zinc-rich CZTSe absorber layer with Cu/Sn, Zn/Sn, Cu/(Zn + Sn), and Zn/(Cu + Zn + Sn) with metallic element ratios of 1.86, 1.24, 0.83, and 0.3, respectively, was obtained in a selenization with a tin source at 530°C. The crystallized CZTSe thin film exhibited an increasingly (112)-preferred orientation at higher tin selenide (SnSe _x ) partial pressure. The lack of any obvious Mo-Se phase-related diffraction peaks in the X-ray diffraction (XRD) diffraction patterns may have arisen from the low Se pressure in the selenization processes. The scanning electron microscope (SEM) images reveal a compact surface morphology and a moderate grain size. CZTSe solar cells with an efficiency of 4.81% were produced by the low-cost fabrication process that is elucidated herein.     

Ni-doped TiO2 nanotubes for wide-range hydrogen sensing

Doping of titania nanotubes is one of the efficient way to obtain improved physical and chemical properties. Through electrochemical anodization and annealing treatment, Ni-doped TiO₂ nanotube arrays were fabricated and their hydrogen sensing performance was investigated. The nanotube sensor demonstrated a good sensitivity for wide-range detection of both dilute and high-concentration hydrogen atmospheres ranging from 50 ppm to 2% H₂. A temperature-dependent sensing from 25°C to 200°C was also found. Based on the experimental measurements and first-principles calculations, the electronic structure and hydrogen sensing properties of the Ni-doped TiO₂ with an anatase structure were also investigated. It reveals that Ni substitution of the Ti sites could induce significant inversion of the conductivity type and effective reduction of the bandgap of anatase oxide. The calculations also reveal that the resistance change for Ni-doped anatase TiO₂ with/without hydrogen absorption was closely related to the bandgap especially the Ni-induced impurity level.     

Improved ethanediol sensing with single Yb ions doped SnO2 nanobelt

Yb-doped SnO₂ nanobelts (Yb–SnO₂ NBs) and pure SnO₂ nanobelts (SnO₂ NBs) are successfully synthesized by thermal evaporation method and their composition and morphology are characterized. The single nanobelt device is fabricated by dual-ion beam deposition system, and the gas sensing performance to ethanediol, methanal, ethanol and acetone is investigated. The results show that the best working temperature of single Yb–SnO₂ NB sensor to ethanediol is 190 °C, which is lower than that of pure counterpart and the highest sensitivity is 10.5 to 100 ppm of ethanediol. In addition, it is found that the response/recovery time is short and the sensor exhibits excellent selectivity and stability. The sensing performance of SnO₂ NB is actually improved by Yb.     

Ferromagnetism and optical properties of La1???x Al x FeO3 nanopowders

La_{1 − x} Al _x FeO₃ (x = 0.0, 0.05, 0.1, 0.2, 0.3, 0.4, and 0.5) nanopowders were prepared by polymerization complex method. All prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR), and UV-vis spectrophotometry (UV-vis). The magnetic properties were investigated using a vibrating sample magnetometer (VSM). The X-ray results of all samples show the formation of an orthorhombic phase with the second phase of α-Fe₂O₃ in doped samples. The crystallite sizes of nanoparticles decreased with increasing Al content, and they are found to be in the range of 58.45 ± 5.90 to 15.58 ± 4.64 nm. SEM and TEM images show the agglomeration of nanoparticles with average particle size in the range of 60 to 75 nm. The FT-IR spectra confirm the presence of metal oxygen bonds of O-Fe-O and Fe-O in the FeO₆ octahedra. The UV-vis spectra show strong absorption peaks at approximately 285 nm, and the calculated optical band gaps are found to be in the range of 2.05 to 2.09 eV with increasing Al content. The M-H loop of the pure sample is antiferromagnetic, whereas those of the doped samples tend to be ferromagnetic with increasing Al content. The magnetization, remanent magnetization, and coercive field of the Al-doped sample with x = 0.5 are enhanced to 1.665 emu/g, 0.623 emu/g, and 4,087.0 Oe, respectively.     

Gas sensing properties of conducting polymer/Au-loaded ZnO nanoparticle composite materials at room temperature

In this work, a new poly (3-hexylthiophene):1.00 mol% Au-loaded zinc oxide nanoparticles (P3HT:Au/ZnO NPs) hybrid sensor is developed and systematically studied for ammonia sensing applications. The 1.00 mol% Au/ZnO NPs were synthesized by a one-step flame spray pyrolysis (FSP) process and mixed with P3HT at different mixing ratios (1:1, 2:1, 3:1, 4:1, and 1:2) before drop casting on an Al₂O₃ substrate with interdigitated gold electrodes to form thick film sensors. Particle characterizations by X-ray diffraction (XRD), nitrogen adsorption analysis, and high-resolution transmission electron microscopy (HR-TEM) showed highly crystalline ZnO nanoparticles (5 to 15 nm) loaded with ultrafine Au nanoparticles (1 to 2 nm). Film characterizations by XRD, field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray (EDX) spectroscopy, and atomic force microscopy (AFM) revealed the presence of P3HT/ZnO mixed phases and porous nanoparticle structures in the composite thick film. The gas sensing properties of P3HT:1.00 mol% Au/ZnO NPs composite sensors were studied for reducing and oxidizing gases (NH₃, C₂H₅OH, CO, H₂S, NO₂, and H₂O) at room temperature. It was found that the composite film with 4:1 of P3HT:1.00 mol% Au/ZnO NPs exhibited the best NH₃ sensing performances with high response (approximately 32 to 1,000 ppm of NH₃), fast response time (4.2 s), and high selectivity at room temperature. Plausible mechanisms explaining the enhanced NH₃ response by composite films were discussed.     

Pulsed laser deposition of single-crystalline Cu7In3/CuIn0.8Ga0.2Se2 core/shell nanowires

Single-crystalline Cu₇In₃/CuIn_0.8Ga_0.2Se₂ (CI/CIGS) core/shell nanowires are fabricated by pulsed laser deposition with Ni nanoparticles as catalyst. The CI/CIGS core/shell nanowires are made up of single-crystalline CI cores surrounded by single-crystalline CIGS shells. The CI/CIGS nanowires are grown at a considerably low temperature (350°C ~ 450°C) by vapor-liquid-solid mode combined with vapor-solid mode. The distribution density of the nanowires increases with the increasing of the deposition duration, and the substrate temperature determines the lengths of the nanowires. The U-V absorption spectra of the CIGS thin films with and without the CI/CIGS core/shell nanowires demonstrate that the CI/CIGS nanowires can remarkably enhance the absorption of CIGS thin films in the spectrum range of 300 to 900 nm.

PACS

61.46. + w; 61.41.e; 81.15.Fg; 81.07.b     

Studies on the resistive response of nickel and cerium doped SnO2 thick films to acetone vapor

Undoped and Ni, Ce-doped nanocrystalline tin oxide were synthesized by co-precipitation route. Doped as well as undoped SnO₂ compositions revealed single phase structure without any impurity. The lattice constant of SnO₂ increases and the grain size decreases with doping of Ni and Ce. The responses of the sensing elements are evaluated by measuring the resistance change upon exposure to various test gases such as liquid petroleum gas (LPG), acetone, ethanol and ammonia. In comparison to LPG, ethanol, and ammonia the response towards acetone vapor increases markedly on simultaneous doping of Ni and Ce. For acetone vapors with 500 ppm at 300 °C, the undoped SnO₂ shows 31% response, while with individual Ni or Ce doping it increases to 38 and 60%, respectively, however with simultaneous doping of Ni and Ce there is a significant enhancement up to 92%. The results of gas sensing measurements reveal that the thick films deposited on alumina substrates using screen printing technique give selectively a high response of (87%) with fast recovery (∼1 min) towards 100 ppm acetone at 300 °C.     

Reduced temperature-dependent thermal conductivity of magnetite thin films by controlling film thickness

We report on the out-of-plane thermal conductivities of epitaxial Fe₃O₄ thin films with thicknesses of 100, 300, and 400 nm, prepared using pulsed laser deposition (PLD) on SiO₂/Si substrates. The four-point probe three-omega (3-ω) method was used for thermal conductivity measurements of the Fe₃O₄ thin films in the temperature range of 20 to 300 K. By measuring the temperature-dependent thermal characteristics of the Fe₃O₄ thin films, we realized that their thermal conductivities significantly decreased with decreasing grain size and thickness of the films. The out-of-plane thermal conductivities of the Fe₃O₄ films were found to be in the range of 0.52 to 3.51 W/m · K at 300 K. For 100-nm film, we found that the thermal conductivity was as low as approximately 0.52 W/m · K, which was 1.7 to 11.5 order of magnitude lower than the thermal conductivity of bulk material at 300 K. Furthermore, we calculated the temperature dependence of the thermal conductivity of these Fe₃O₄ films using a simple theoretical Callaway model for comparison with the experimental data. We found that the Callaway model predictions agree reasonably with the experimental data. We then noticed that the thin film-based oxide materials could be efficient thermoelectric materials to achieve high performance in thermoelectric devices.     

Hydrothermal Synthesis of β-Nb2ZnO6 Nanoparticles for Photocatalytic Degradation of Methyl Orange and Cytotoxicity Study

β-Nb₂ZnO₆ nanoparticles were synthesized by a hydrothermal process and calcined at two temperatures, 500 °C and 700 °C, and assigned as A and B, respectively. X-ray diffraction, together with transmission electron microscopy, revealed that the β-Nb₂ZnO₆ nanoparticles calcined at 700 °C (B) were more crystalline than the β-Nb₂ZnO₆ calcined at 500 °C (A) with both types of nanoparticles having an average size of approximately 100 nm. The physiochemical, photocatalytic, and cytotoxic activities of both types of β-Nb₂ZnO₆ nanoparticles (A and B) were examined. Interestingly, the photodegradation of methyl orange, used as a standard for environmental pollutants, was faster in the presence of the β-Nb₂ZnO₆ nanoparticles calcined at 500 °C (A) than in the presence of those calcined at 700 °C (B). Moreover, the cytotoxicity was evaluated against different types of cancer cells and the results indicated that both types of β-Nb₂ZnO₆ nanoparticles (A and B) exhibited high cytotoxicity against MCF-7 and HCT116 cells but low cytotoxicity against HeLa cells after 24 and 48 h of treatment. Overall, both products expressed similar EC₅₀ values on tested cell lines and high cytotoxicity after 72 h of treatment. As a photocatalyst, β-Nb₂ZnO₆ nanoparticles (A) could be utilized in different applications including the purification of the environment and water from specific pollutants. Further biological studies are required to determine the other potential impacts of utilizing β-Nb₂ZnO₆ nanoparticles in the biomedical application field.     

In situ growth of CuInS2 nanocrystals on nanoporous TiO2 film for constructing inorganic/organic heterojunction solar cells

Inorganic/organic heterojunction solar cells (HSCs) have attracted increasing attention as a cost-effective alternative to conventional solar cells. This work presents an HSC by in situ growth of CuInS₂(CIS) layer as the photoabsorption material on nanoporous TiO₂ film with the use of poly(3-hexylthiophene) (P3HT) as hole-transport material. The in situ growth of CIS nanocrystals has been realized by solvothermally treating nanoporous TiO₂ film in ethanol solution containing InCl₃ · 4H₂O, CuSO₄ · 5H₂O, and thioacetamide with a constant concentration ratio of 1:1:2. InCl₃ concentration plays a significant role in controlling the surface morphology of CIS layer. When InCl₃ concentration is 0.1 M, there is a layer of CIS flower-shaped superstructures on TiO₂ film, and CIS superstructures are in fact composed of ultrathin nanoplates as ‘petals’ with plenty of nanopores. In addition, the nanopores of TiO₂ film are filled by CIS nanocrystals, as confirmed using scanning electron microscopy image and by energy dispersive spectroscopy line scan analysis. Subsequently, HSC with a structure of FTO/TiO₂/CIS/P3HT/PEDOT:PSS/Au has been fabricated, and it yields a power conversion efficiency of 1.4%. Further improvement of the efficiency can be expected by the optimization of the morphology and thickness of CIS layer and the device structure.     

Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

Enhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >10⁵ cycles, and good data retention of >10⁴ s with a good resistance ratio of >10² at 85°C are obtained using a Ti nanolayer to form a W/TiO_x/TaO_x/W structure under a low current operation of 80 μA, while few switching cycles are observed for W/TaO_x/W structure under a higher current compliance >300 μA. The low resistance state decreases with increasing current compliances from 10 to 100 μA, and the device could be operated at a low RESET current of 23 μA. A small device size of 150 × 150 nm² is observed by transmission electron microscopy. The presence of oxygen-deficient TaO_x nanofilament in a W/TiO_x/TaO_x/W structure after switching is investigated by Auger electron spectroscopy. Oxygen ion (negative charge) migration is found to lead to filament formation/rupture, and it is controlled by Ti nanolayer at the W/TaO_x interface. Conducting nanofilament diameter is estimated to be 3 nm by a new method, indicating a high memory density of approximately equal to 100 Tbit/in.².     

The effects of atmosphere and calcined temperature on photocatalytic activity of TiO2 nanofibers prepared by electrospinning

TiO₂-based nanofibers were synthesized using a sol–gel method and electrospinning technique. The as-spun composite fibers were heat-treated at different temperatures (500°C, 550°C, 600°C, and 650°C) and atmospheres (ammonia and nitrogen) for 4 h. The fibers had diameters of 50 to 200 nm and mainly featured anatase and rutile phases. The anatase phase decreased and the rutile phase increased with increasing temperature. Different nitrogen conditions exerted minimal effects on the TiO₂ crystalline phase. Different nitriding atmospheres during preservation heating yielded various effects on fibers. The effect of nitrogen in ammonia atmosphere is better than that in nitrogen atmosphere. The fibers heat-treated at 600°C and subjected to preservation heating in NH₃ showed high photocatalytic activity.     

Fabrication and NO2 gas sensing performance of TeO2-core/CuO-shell heterostructure nanorod sensors

TeO₂-nanostructured sensors are seldom reported compared to other metal oxide semiconductor materials such as ZnO, In₂O₃, TiO₂, Ga₂O₃, etc. TeO₂/CuO core-shell nanorods were fabricated by thermal evaporation of Te powder followed by sputter deposition of CuO. Scanning electron microscopy and X-ray diffraction showed that each nanorod consisted of a single crystal TeO₂ core and a polycrystalline CuO shell with a thickness of approximately 7 nm. The TeO₂/CuO core-shell one-dimensional (1D) nanostructures exhibited a bamboo leaf-like morphology. The core-shell nanorods were 100 to 300 nm in diameter and up to 30 μm in length. The multiple networked TeO₂/CuO core-shell nanorod sensor showed responses of 142% to 425% to 0.5- to 10-ppm NO₂ at 150°C. These responses were stronger than or comparable to those of many other metal oxide nanostructures, suggesting that TeO₂ is also a promising sensor material. The responses of the core-shell nanorods were 1.2 to 2.1 times higher than those of pristine TeO₂ nanorods over the same NO₂ concentration range. The underlying mechanism for the enhanced NO₂ sensing properties of the core-shell nanorod sensor can be explained by the potential barrier-controlled carrier transport mechanism.

PACS

61.46. + w; 07.07.Df; 73.22.-f     

Effect of annealing temperature on wettability of TiO2 nanotube array films

Highly ordered TiO₂ nanotube array (TN) films were prepared by anodization of titanium foil in a mixed electrolyte solution of glycerin and NH₄F and then annealed at 200°C, 400°C, 600°C, and 800°C, respectively. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), water contact angle (WCA), and photoluminescence (PL). It was found that low temperature (below 600°C) has no significant influence on surface morphology, but the diameter of the nanotube increases from 40 to 50 nm with increasing temperature. At 800°C, the nanotube arrays are completely destroyed and only dense rutile film is observed. Samples unannealed and annealed at 200°C are amorphous. At 400°C, anatase phase appears. At 600°C, rutile phase appears. At 800°C, anatase phase changes into rutile phase completely. The wettability of the TN films shows that the WCAs for all samples freshly annealed at different temperatures are about 0°. After the annealed samples have been stored in air for 1 month, the WCAs increase to 130°, 133°, 135°, 141°, and 77°, respectively. Upon ultraviolet (UV) irradiation, they exhibit a significant transition from hydrophobicity to hydrophilicity. Especially, samples unannealed and annealed at 400°C show high photoinduced hydrophilicity.     

Passivation mechanism of thermal atomic layer-deposited Al2O3 films on silicon at different annealing temperatures

Thermal atomic layer-deposited (ALD) aluminum oxide (Al₂O₃) acquires high negative fixed charge density (Q_f) and sufficiently low interface trap density after annealing, which enables excellent surface passivation for crystalline silicon. Q_f can be controlled by varying the annealing temperatures. In this study, the effect of the annealing temperature of thermal ALD Al₂O₃ films on p-type Czochralski silicon wafers was investigated. Corona charging measurements revealed that the Q_f obtained at 300°C did not significantly affect passivation. The interface-trapping density markedly increased at high annealing temperature (>600°C) and degraded the surface passivation even at a high Q_f. Negatively charged or neutral vacancies were found in the samples annealed at 300°C, 500°C, and 750°C using positron annihilation techniques. The Al defect density in the bulk film and the vacancy density near the SiO_x/Si interface region decreased with increased temperature. Measurement results of Q_f proved that the Al vacancy of the bulk film may not be related to Q_f. The defect density in the SiO_x region affected the chemical passivation, but other factors may dominantly influence chemical passivation at 750°C.     

Open structure ZnO/CdSe core/shell nanoneedle arrays for solar cells

Open structure ZnO/CdSe core/shell nanoneedle arrays were prepared on a conducting glass (SnO₂:F) substrate by solution deposition and electrochemical techniques. A uniform CdSe shell layer with a grain size of approximately several tens of nanometers was formed on the surface of ZnO nanoneedle cores after annealing at 400°C for 1.5 h. Fabricated solar cells based on these nanostructures exhibited a high short-circuit current density of about 10.5 mA/cm² and an overall power conversion efficiency of 1.07% with solar illumination of 100 mW/cm². Incident photo-to-current conversion efficiencies higher than 75% were also obtained.     

Aluminum-doped ceria-zirconia solid solutions with enhanced thermal stability and high oxygen storage capacity

A facile solvothermal method to synthesize aluminum-doped ceria-zirconia (Ce_0.5Zr_0.5-xAl_xO_2-x/2, x = 0.1 to 0.4) solid solutions was carried out using Ce(NH₄)₂(NO₃)₆, Zr(NO₃)₃·2H₂O Al(NO₃)₃·9H₂O, and NH₄OH as the starting materials at 200°C for 24 h. The obtained solid solutions from the solvothermal reaction were calcined at 1,000°C for 20 h in air atmosphere to evaluate the thermal stability. The synthesized Ce_0.5Zr_0.3Al_0.2O_1.9 particle was characterized for the oxygen storage capacity (OSC) in automotive catalysis. For the characterization, X-ray diffraction, transmission electron microscopy, and the Brunauer-Emmet-Teller (BET) technique were employed. The OSC values of all samples were measured at 600°C using thermogravimetric-differential thermal analysis. Ce_0.5Zr_0.3Al_0.2O_1.9 solid solutions calcined at 1,000°C for 20 h with a BET surface area of 18 m² g⁻¹ exhibited a considerably high OSC of 427 μmol-O g⁻¹ and good OSC performance stability. The same synthesis route was employed for the preparation of the CeO₂ and Ce_0.5Zr_0.5O₂. The incorporation of aluminum ion in the lattice of ceria-based catalyst greatly enhanced the thermal stability and OSC.     

The situ preparation of silica nanoparticles on the surface of functionalized graphene nanoplatelets

A method for situ preparing a hybrid material consisting of silica nanoparticles (SiO₂) attached onto the surface of functionalized graphene nanoplatelets (f-GNPs) is proposed. Firstly, polyacrylic acid (PAA) was grafted to the surface of f-GNPs to increase reacting sites, and then 3-aminopropyltriethoxysilane (APTES) KH550 reacted with abovementioned product PAA-GNPs to obtain siloxane-GNPs, thus providing reaction sites for the growth of SiO₂ on the surface of GNPs. Finally, the SiO₂/graphene nanoplatelets (SiO₂/GNPs) hybrid material is obtained through introducing siloxane-GNPs into a solution of tetraethyl orthosilicate, ammonia and ethanol for hours'' reaction. The results from Fourier transform infrared spectroscopy (FTIR) showed that SiO₂ particles have situ grown on the surface of GNPs through chemical bonds as Si-O-Si. And the nanostructure of hybrid materials was characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). All the images indicated that SiO₂ particles with similar sizes were grafted on the surface of graphene nanoplatelets successfully. And TEM images also showed the whole growth process of SiO₂ particles on the surface of graphene as time grows. Moreover, TGA traces suggested the SiO₂/GNPs hybrid material had stable thermal stability. And at 900°C, the residual weight fraction of polymer on siloxane-GNPs was about 94.2% and that of SiO₂ particles on hybrid materials was about 75.0%. However, the result of Raman spectroscopy showed that carbon atoms of graphene nanoplatelets became much more disordered, due to the destroyed carbon domains during the process of chemical drafting. Through orthogonal experiments, hybrid materials with various sizes of SiO₂ particles were prepared, thus achieving the particle sizes controllable. And the factors’ level of significance is as follows: the quantity of ammonia > the quantity of tetraethyl orthosilicate (TEOS) > the reaction time.