气相色谱法研究碳在氧阴极过程中的腐蚀

用气相色谱法研究和为氧阴极的碳材料在Ｎａ２Ｂ４Ｏ７和Ｎａ２Ｂ４Ｏ７－Ｎａ２ＣＯ３介质中腐蚀,结果表明,在较负电位下（－０．４－０．５Ｖ,０．１ｍｏｌ／Ｌ ＮａＯＨ）,检出ＣＯ和Ｃ瑟空白相同,说明碳腐蚀主要由电化学作用所致。     

R型六方铁氧体化学键性质和穆斯堡尔谱位移研究

利用电介质的平均能带模型计算了Ｒ型六方铁氧体ＢａＴｉ_２Ｆｅ_４Ｏ_１１和ＢａＳｎ_２Ｆｅ_４Ｏ_１１的化学键参数,得到ＢａＴｉ_２Ｆｅ_４Ｏ_１１的２a、４ｆ、４ｅ、６ｇ各晶位平均共价性分别为０．０６２、０．３５４、 ０．３０９、 ０．３６１; ＢａＳｎ_２Ｆｅ_４Ｏ_１１的相应晶位平均共价性分别为０．０６２、 ０．３５３、 ０．１８３、０．２５５．应用化学环境因子计算了^５７Ｆｅ、^１１９Ｓｎ在Ｒ结构中的穆斯堡尔同质异能位移。确定了^５７Ｆｅ,^１１９Ｓｎ的价态和占位情况．     

小型可调式变压吸附制氧装置性能的实验研究

利用自行研制出的小型可调式变压吸附制氧装置研究了冲洗量、出口流量和出口压力对产品气氧浓度的影响。实验结果表明，１．当出口流量越大时，出口压力越小，反之亦然。２．压力对氧浓度影响很大，压力增高，氧浓度迅速增大。３．出口富氧浓度与流量大小有密切关系，还与冲洗量大小有关。出口流量的增大会引起产品气氧浓度的降低。当冲洗量过大或过小时，减小流量，氧浓度提高不大。对于冲洗量适中的情况，流量小于２Ｌ／ｍｉｎ时，减小流量，浓度提高很快；但当流量大于２Ｌ／ｍｉｎ时，降低流量，浓度变化不大。４．冲洗量对浓度影响较大，当冲洗量适中时（阀门角度为１８０°），产品气氧浓度较高，过大或过小时都会降低富氧浓度。本装置产品富氧气中氧气浓度最高可达到７５％，其流量为０５Ｌ／ｍｉｎ，当富氧浓度为５５％时，流量可达３５Ｌ／ｍｉｎ，说明本装置完全达到并超过了设计要求，很适合于氧巴和家庭。     

单柱离子色谱法分离测定复合镀铬液中的F^—和SO4^2—

采用单柱离子色谱系统，在样品中存在大量铬酸根的情况下，以３．０ｍｍｏｌ／Ｌ邻苯二甲酸氢钾作为淋洗液，简单快速地分离测定了镀铬液中的Ｆ＾－和ＳＯ４＾２－，并在此条件下作出了Ｋ２ＳｉＦ６的离解曲线。Ｆ＾－，ＳＯ４＾２－的线性范围分别为１．０￣１５０．０ｍｇ／Ｌ，１．４￣１５０．０ｍｇ／Ｌ，最低检出浓度分别为０．０２ｍｇ／Ｌ，０．０７ｍｇ／Ｌ（信噪比为２）。     

ABS用聚丁二烯胶乳的合成及应用

重点研究了在歧化松香皂（ＤＲＳ），十二烷基硫酸钠（ＳＤＳ）和间次甲基萘磺酸盐（ＮＦ）组成三元复合乳化剂体系中ＤＲＳ初始用量及补辊方式对聚丁二烯胶乳（ＰＢＬ）粒子形态的影响，结果表明：当ＤＲＳ初始用量为１．２％，在转化率分别为２５％，５０％和７０％，下各补加ＤＲＳ０．４，０．４和０．２份时，可较好地控制ＰＢＬ粒子形态和分布，其平均粒径不小于０．２５μｍ且ＰＢＬ试验重性好，接枝共混合制得ＡＢＳ缺口冲击     

通过键共价性增加策略获得高性能Cu3SbSe4基热电材料(英文)

通过Cu₃SbSe₄-MTe (M=Ge/Sn)固溶体系的对比研究,本文报道了一种增加键共价性来弱化电声耦合进而获得高迁移率的策略,也证实了该策略能提升Cu₃SbSe₄化合物的热电性能.研究发现,相比于SnTe固溶,GeTe固溶赋予Cu₃SbSe₄化合物在相似载流子浓度情况下更高的迁移率,进而获得更优越的电输运性能.密度泛函理论计算表明,与SnTe固溶相比,GeTe固溶能增加Cu₃SbSe₄化学键共价性因而具有优越的电输运性能.最终,在Cu₃SbSe₄-1%GeTe样品中取得了0.8的最大热电优值(@648 K)和0.41的平均热电优值(300–648 K).此研究表明,通过增加键共价性来弱化电声耦合进而获得高迁移率是提升热电性能的有效途径.     

Ar离子轰击高定向石墨表面结构变化的X射线光电子能谱分析

用X射线光电子能谱（XPS）研究了3．0keV Ar离子轰击高定向裂解石墨（HOPG）引起的表面结构的变化。通过对C1sC KLL及C2s谱峰形状的定性和定量分析，表明Ar离子轰击将破坏共价π键并导致表面局域sp^2杂化C键向sp^3杂化C键转化。sp^3／sp^2之比依赖于离子轰击时间。     

三元GaxIn1-xP和四元(AlxGa1-x)0.51In0.49P合金拉曼光谱研究

测量了室温下三元ＧａｘＩｎ１－ｘＰ（ｘ＝０．４８）和四元（ＡｌｘＧａ１－ｘ）０．５１Ｉｎ０．４９Ｐ（ｘ＝０．２９）合金背散射配置下的喇曼光谱。三元ＧａｘＩｎ１－ｘＰ的喇曼谱表现为双模形式,在ＤＡＬＡ带上叠加了ＦＬＡ模,在有序样品中观察到了类ＧａＰ的ＴＯ１横和类ＩｎＰ的ＴＯ２模,类ＧａＰ的ＬＯ１模和类ＩｎＰ的ＬＯ２模的分裂,表示有序度的ｂ／ａ比从无序样品的０．４０变化到有序样品的０．１０,有序样品ｂ     

分光光度法测定余氯的标准曲线线性范围的探讨

在用分光光度法测定水样中余氯的实验过程中,发现按照国标ＧＢ１１８９８－１９８９中所要求的在整个的浓度范围内（余氯０￣５．００ｍｇ／Ｌ）所制得的标准曲线的相关系数０．９９￣０．９９９之间。为此笔者对其标准曲线的线性范围进行了一些探讨。发现,当余氯的浓度范围为０￣１００ｍｇ／Ｌ时,标准曲线的线性较好,相关系数〉０．９９９;当余氯的浓度〉１．００ｍｇ／Ｌ后,所绘制的标准曲线呈负偏离现象,相关系数〈０．９     

SI—GaAs中的EL2和EL6缺陷团簇相关性研究

用光致电流瞬态谱（ＰＩＴＳ）方法研究了ＬＥＣＳＩ－ＧａＡｓ原生单晶经常规退火和等时快速退火（ＲＴＡ）深能级缺陷的变化。缺陷ＥＬ２（Ｅｃ－０．８２ｅＶ）ＥＬ１２（Ｅｃ－０．７９ｅＶ）表现出类似的ＲＴＡ特性，应属于ＥＬ２缺陷团簇；缺陷ＥＬ６（Ｅｃ－０．３８ｅＶ），ＥＬ８（Ｅｃ－０．２７ｅＶ）和ＥＬ９（Ｅｃ－０．２４ｅＶ０亦具有相似的ＲＴＡ特性，属ＥＬ６缺陷团簇。实验发现，在热退火中，ＥＬ２团簇缺陷密度     

Ti:Fe:LiNbO_3晶体的生长及其光折变性能的研究

采用熔体提拉法生长了不同掺杂浓度的Ti：Fe：LiNbO3晶体．研究了掺杂杂质离子浓度变化对晶体光折变性能的影响，测定了晶体经热化学还原处理前后的透射谱．用ESR方法证实，未经还原处理时，Ti：Fe：LiNbO3晶体中Ti离子以Ti4 形式存在．与Fe：LiNbO3和Ti：LiNbOa相比，Ti、Fe复合掺杂，通过电荷补偿效应，使未经还原处理的晶体中Fe2 增加，从而使光吸收增强；可以通过改变Ti、Fe掺杂浓度的方法来控制晶体中Fe2 离子的浓度，达到控制并改善晶体光折变性能的目的．本文还对Ti：Fe：LiNbO3晶体的全息性能进行了研究，测得Ti：Fe：LiNbO3晶体响应时间缩短，衍射效率高达90％以上．Ti：Fe：LiNbO3晶体是一种优质的光折变材料．     

Soft XAFS study on the 4d electronic structure of ruthenium in complex perovskite oxide

The bond covalency effect on the electronic structure of the perovskite oxides, La₂MRuO₆ (M=Zn, Mg, and Li) and Ba₂YRuO₆, has been investigated by the complementary methods of X-ray absorption spectroscopy and X-ray diffraction. Ru K-edge and Ru L_III-edge XANES analyses clarify that the ruthenium ions with oxidation states of IV (d⁴) and V (d³) are stabilized in a nearly regular RuO₆ octahedron. Comparison of L-edge XANES spectra for the compounds with isovalent ruthenium ion has shown that the t_2g level is mainly influenced by the A site cation, whereas the e_g level is mainly affected by the neighboring B site cation, which can be understood on the basis of the bond competition scheme. The present Ru K-edge EXAFS analysis results reveal that the first neighbor coordination (Ru–O shell) is nearly isotropic even in monoclinic perovskites, which is consistent with the XRD and XANES results. The experimental EXAFS spectra in the range R≤∼4.5 Å are well reproduced by ab initio calculation based on crystallographic data, which supports the long-range structure presented by Rietveld refinement. The EXAFS curve-fitting analyses allow us to distinguish the differences in (Ru–O) bond lengths for isovalent ruthenates, which is supported by the XANES spectral features and the chemical interpretation of bond covalency.     

H2C2O4稳定剂对SOl-Gel法制备LiNbO3薄膜的影响

研究了分别以H2C2O，HNO3，HCOOH和CH3COOH作稳定剂的LiNbO3薄膜先驱液的稳定性，发现H2C2O4作稳定剂的先驱液的稳定性最好，用sol-gel法在Si(110)基板上制备了以H2C2O4作稳定剂的LiNbO3薄膜，并对LiNbO3薄膜进行了IR，XRD和SEM表征，结果表明，生成的LiNbO3为多晶，与HNO3相比，以H2C2O4作稳定剂制备的LiNbO3薄膜形貌较差。     

LiNbO_3晶体在凝胶玻璃中的受控析晶研究

采用Ｓｏｌ－ｇｅｌ工艺,以Ｎｂ（ＯＨ）５为铌酸盐的起始原料,低温合成了ＬｉＮｂＯ３／ＳｉＯ２凝胶玻璃。通过ＤＴＡ、ＸＲＤ和ＩＲ分析方法,研究了ＬｉＮｂＯ３晶体在凝胶玻璃中的析晶过程和析晶动力学。结果表明,ＬｉＮｂＯ３微晶在凝胶玻璃中的析晶过程是受界面控制的,其析晶活化能为１４２ＫＪ／ｍｏｌ。     

Synthesis and ionic conductivity of CuxLi3−xN

The effects of cation substitution in Li₃N were studied on Cu_xLi_3?xN. The results of Juza and Sachsez on the structural features were confirmed. The activation energy was reduced to 0.13 eV, which was attributed to partial covalency of the Cu-N bond. In spite of this reduction, the ionic conductivity also decreased because of decrease of a number of Li vacancy with substitution.     

Ce:Eu:LiNbO3晶体制备及光折变性能

为了昨到光折变性能优良的晶体材料，在LiNbO3中掺进CeO2和Eu2O3，生长Ce:LiNbO3和Ce:Eu:LiNbO3单晶体，对晶体进行极化和氧化还原处理，并利用XRD、UV-VIS及二波耦合光路测试了晶体的晶格常数、吸收光谱、指数增益系数和响应时间。结果表明，Ce:Eu:LiNbO3晶体的晶格常数比Ce:LiNbO3晶体小，其吸收边比CeLiNbO3晶体红移更多，指数增益系数比Ce:LiNbO3晶体大，而响应时间比Ce:LiNbO3晶体的要短，Ce:Eu:LiNbO3是优良的光折变晶体材料。     

Surface acoustic wave properties of proton-exchanged LiNbO3 waveguides with SiO2 film

Surface acoustic wave (SAW) properties of proton-exchanged (PE) z-cut lithium niobate (LiNbO3) waveguides with silicon dioxide (SiO2) film layers were investigated using octanoic acid. The distribution of hydrogen measured by secondary ion mass spectrometry (SIMS) showed a step-like profile, which was assumed to be equal to the waveguide depth (d). The SiO2 film was deposited on z-cut LiNbO3 waveguide by radio frequency (rf) magnetron sputtering. We investigated the important parameters for the design of SAW devices such as phase velocity (Vp), insertion loss (IL) and temperature coefficient of frequency (TCF) by a network analyzer using thin-film aluminum interdigital transducer electrodes on the upper SiO2 film surface. The experimental results showed that the Vp of SAW decreased slightly with the increase of h/lambda, where h was the thickness of SiO2 films and lambda was the wavelength. The IL of SAW increased with increased h/lambda. The TCF of SAW calculated from the frequency change of the output of SAW delay line showed an evident decrease with the increase of h/lambda. The TCF for PE z-cut LiNbO3 was measured to be about -54.72 ppm/degreees C at h/lambda = 0.08. It revealed that the SiO2 films could compensate and improve the temperature stability as compared with the TCF of SAW on PE samples without SiO2 film.     

Electron-Beam Poling on Ti:LiNbO(3)

The periodic domain inversion by direct electron-beam (EB) bombardment on Ti:LiNbO(3) is presented. Gratings with a 6.6-mum period are achieved. The inverted patterns are observed after chemical etching by use of a scanning electron microscope, and they exhibit a high resolution, as expected. Next, the influence of the EB parameters on the inversion phenomenon is developed for both LiNbO(3) and Ti:LiNbO(3). In this way we can provide an explanation of the phenomenon of domain inversion with an EB, which is not completely understood. Finally, quasi-phase-matched second-harmonic generation is presented in bulk LiNbO(3) by use of a Nd:YAG laser light. These experiments allowed us to achieve the characteristics of the inverted domains along the crystal in particular.     

第一性原理研究InP的能带结构与光学性能

采用基于局域密度近似的第一性原理方法计算了InP的能带结构和电子态密度,并对InP晶体的电荷分布进行了Mulliken布局分析.计算表明InP是直接带隙半导体材料,其价带主要由In的5s以及P的3s、3p态电子构成,导带主要由P的3p以及In的5s、5p态电子构成;P原子与In原子的电子重叠布局数达2.30,表明In-P键的共价性较强而离子性较弱.利用Kramers-Kronig色散关系对InP的介电函数、能量损失谱、折射率以及吸收系数等进行了计算,计算结果与实验值基本一致.此外,根据计算的能带结构与态密度分析了InP电子结构与光学性质的内在联系,解释了InP材料光学性能的微观机制.