NBI双潘宁离子源参数的静电探针测量

介绍了静电探针在22cm双潘宁离子源中心等离子体参数测量中的应用.测出了探针的伏安特性曲线,由该曲线求出在弧流为200 A时,电子温度约为6.0 eV,密度约为2×1012 cm-3,这对于调整放电控制条件,获得高效率大功率的离子源有重要的参考价值,并且对于今后实现强而且均匀的中性束束流的引出也有着重要意义.     

双潘宁离子源等离子体发生器电源系统

针对强流双潘宁离子源等离子体发生器电源系统的特殊要求,介绍了灯丝电源和弧电源的组成及其作用,并对其主电路设计思路进行了相关的分析。离子源等离子体放电实验结果表明,该套等离子体电源系统达到了设计指标要求。     

基于静电探针诊断下离子源调制放电

介绍了在静电探针测量下,离子源调制放电闭环控制系统设计要求,讨论了该系统的硬件设计、软件设计及其工作原理,给出了部分实验结果.系统成功地应用于实验并获得初步实验结果,为以后中性束注入开展相关物理实验提供可靠保障.     

强流双潘宁离子源弧特性研究

针对22cm双潘宁离子源,研究了其弧流与放电调节参数的关系以及二次进气的效果,确定了拉长弧流脉宽、提高弧流强度与稳定性、达成离子源合适工作状态的措施,为获得高品质的弧流提供了依据.离子源弧特性测试研究结果对提高强流离子源的工作性能以实现NBI系统强流准稳态运行有重要的指导意义.     

中子管冷阴极潘宁离子源起弧特性测试

实验建立了中子管冷阴极潘宁离子源起弧特性的测试方法。该方法采用对比实验方法对中子管离子源起弧时刻进行研究,可得到离子源起弧规律,发现同步脉冲与中子脉冲之间的差异。通过改变变量,对存在的差异进行研究,得到中子脉冲时序关系,为脉冲中子类测井仪方法研究提供数据基础。     

15cm双潘宁离子源等离子体产生器

介绍研制的１５ｃｍ双潘宁离子源等离子体产生器的结构和工作原理，研究了磁场、气压和弧功率等运行参数对源特性的影响，最后结合朗缪尔探针测量结果进行了讨论。该产生器的探针饱和离子流密度已达到２００ｍＡ／ｃｍ２以上，引出面附近的离子密度径向不均匀度＜±５％，噪声水平＜±１０％。     

基于磁偏转的真空弧离子源成分诊断

采用磁偏转的方法,对金属氢化物电极真空弧离子源放电产生的等离子体进行了成分诊断。采用了Ti D2电极材料进行放电,测量了在30-80 A弧流情况下的各离子的组分。实验结果表明,弧流越大时等离子体的密度越大,在现有引出结构下,由于等离子体发射面的凹凸变化导致测得的离子信号出现双峰。通过增加栅网可以减少等离子密度,双峰情况会有所减少。另外,随着弧流增大,氘所占比例会有所增加,弧流达到60 A以上氘含量增幅不明显。     

基于中子管离子源的放电电流特性测量

离子源是中子管的核心部件,其放电电流特性与离子源电压、管内真空度和磁场变化有关。该设计通过由离子源、控制台和真空计所组成的实验装置,对离子源放电电流特性进行测量,可得到离子源放电规律,找到其最佳工作状态和工作参数,提高产品质量。     

真空弧离子源的电阻触发工作方式

介绍了真空弧离子源的一种电阻触发工作方式。有别于典型金属蒸汽真空弧(Metal vapor vacuum arc,MEVVA)离子源的触发工作方式,该方式不需要高压触发脉冲发生器和高压隔离脉冲变压器,简化了电源系统。实验测量了采用电阻触法20-200A主弧电流下的引出离子流,结果表明离子流随主弧流增大。研究了不同阻值触发电阻的起弧情况,实验结果表明在一定电阻阻值范围内,触发电阻越大,触发越难成功。电阻增大使得触发时间增长,主弧上升沿变缓,但是对引出的离子流几乎没有影响。     

Measurement of Ion Parameters by Ion Sensitive Probe in ECR Plasma

Ion parameters in electron cyclotron resonance (ECR) microwave plasma were measured by ion sensitive probe and were compared with the electron parameters obtained by double Langmuir probe. The effects of gas pressure and microwave power on the ion temperature and density were analyzed. The spatial distribution of the ion parameters was also investigated by the ion sensitive probes with a tunable radial depth installed on different probe windows along the chamber axis. Results showed that the ion density measured by the ion sensitive probe was in good agreement with the electron density measured by the double Langmuir probe. The influence of gas pressure on the ion parameters was stronger than that of microwave power. With the increase in working pressure, the ion temperature decreased monotonously with a decreasing rate larger than that at higher pressure. The ion density first increased to a peak (42.3?1010cm-3) at 1 Pa and then decreased. The ion temperature and density increased little with the increase in the microwave power from 400 W to 800 W. The plasma far away from the resonant point is found to be radially uniform.     

氢化钛镍合金阴极真空弧放电离子特性研究

本文将氢化钛镍合金材料应用于强流长脉冲（200 A/270 μs）真空弧放电实验中,该材料能在强流长脉冲真空弧放电产生的高温条件下保持较好的稳定性。使用飞行时间谱仪获得了氢化钛镍合金阴极真空弧放电产生的离子电荷态分布和离子成分。结果表明：Tiⁿ⁺和Niⁿ⁺电荷态为1+、2+和3+,在放电过程的早期（0~30 μs）,H⁺成分随时间逐渐增加,在30 μs时达到最大比例57%,而Tiⁿ⁺和Niⁿ⁺（n=1,2,3）离子成分随时间逐渐减少,在30 μs时达到最小比例43%;在放电过程的后期（30~270 μs）,H⁺成分迅速下降且在75 μs后保持在总离子流的12%左右直至放电结束,Tiⁿ⁺和Niⁿ⁺（n=1,2,3）含量随时间逐步增加,且在75 μs后保持在总离子流的88%左右直至放电结束。     

真空弧离子源引出束流在加速空间的分布

采用数码相机直接照相的方法来确定真空弧离子源引出束流在加速空间的分布。实验在动态真空实验系统中进行,系统真空度优于2×10-3 Pa。在离子源脉冲工作的条件下,采用数码相机拍摄到离子源引出束流在加速空间的积分图像,得到引出束流的幅亮度在拍摄平面上的相对分布,然后再通过Abel转换得到引出束流在加速空间的径向分布。实验结果表明:真空弧离子源引出束流近似高斯分布,离子源出口处的束流比靶入口处的束流强40%。     

Radial and Angular Resolved Langmuir Probe Diagnosis of a Pulsed Vacuum Arc Plasma

Vacuum arc ion sources are known for delivering high currents of ion beams in many technological applications. There is a great need in the present ion accelera...     

Analysis of Effects of the Arc Voltage on Arc Discharges in a Cathode Ion Source of Neutral Beam Injector

A hot cathode bucket ion source is used for the EAST(experimental advanced superconducting tokamak)neutral beam injector.The thermal electrons emitted from the surface of the cathode are extracted and accelerated by the electric field formed by the arc voltage,which is applied between the arc chamber of the ion source and the cathode.This paper analyzes the effects of arc voltage on the arc discharge in a hot cathode high current ion source.     

直流电弧等离子体点火器射流特性研究

采用光谱仪测量了等离子体点火器出口射流的发射光谱,利用玻尔兹曼曲线斜率法计算了射流的电子温度,并通过电离平衡方程计算了射流气体温度,获得点火器出口射流长度、射流速度、电子温度和射流温度随弧电流及进口氩气流量的变化规律。并分析了航空等离子体电弧射流中是否可使用电子温度来代替射流气体温度。实验表明：弧电流随着进口氩气流量的增大而减小;出口射流长度和速度随弧电流的增大而增大,随进口氩气流量的增大先增大后减小;出口电子温度、电子密度和射流温度随弧电流的增大而升高,随氩气流量的增大而降低。     

Parametric Study on Arc Behavior of Magnetically Diffused Arc

A model coupling the plasma with a cathode body is applied in the simulation of the diffuse state of a magnetically rotating arc.Four parametric studies are performed:on the external axial magnetic field (AMF),on the cathode shape,on the total current and on the inlet gas velocity.The numerical results show that:the cathode attachment focuses in the center of the cathode tip with zero AMF and gradually shifts off the axis with the increase of AMF;a larger cathode conical angle corresponds to a cathode arc attachment farther away off axis;the maximum values of plasma temperature increase with the total current;the plasma column in front of the cathode tip expands more severely in the axial direction,with a higher inlet speed;the cathode arc attachment shrinks towards the tip as the inlet speed increases.The various results are supposed to be explained by the joint effect of coupled cathode surface heating and plasma rotating flow.     

基于闪烁体的快离子损失探针的设计研究

基于闪烁体的快离子损失探针是用于测量托克马克装置中损失快离子的重要诊断设备。它能对损失快离子的能量和俯仰角进行同时测定,得到损失快离子通量随时间演化的信息,对研究快离子的约束输运行为有重要意义。针对HL-2A对损失快离子诊断的具体需求,对用于HL-2A的快离子损失探针的闪烁体屏尺寸、闪烁材料种类以及准直系统做了研究设计。同时对适用于ITER的闪烁材料种类进行了分析讨论。     

The Gridless Plasma Ion Source （GIS） for Plasma Ion Assisted Optical Coating

High-quality optical coating is a key technology for modern optics. Ion-assisted deposition technology was used to improve the vaporized coating in 1980's. The GIS (gridless ion source), which is an advanced plasma source for producing a high-quality optical coating in large area, can produce a large area uniformity＞1000 mm(diameter), a high ion current density ～ 0.5mA/cm2, 20 eV ～ 200 eV energetic plasma ions and can activate reactive gas and film atoms. Now we have developed a GIS system. The GIS and the plasma ion-assisted deposition technology are investigated to achieve a high-quality optical coating. The GIS is a high power and high current source with a power of I kW ～ 7.5 kW, a current of 10 A ～ 70 A and an ion density of 200μA/cm2 ～ 500μA/cm2. Because of the special magnetic structure, the plasma-ion extraction efficiency has been improved to obtain a maximum ion density of 500μA/cm2 in the medium power (～ 4 kW) level. The GIS applied is of a special cathode structure, so that the GIS operation can be maintained under a rather low power and the lifetime of cathode will be extended. The GIS has been installed in the LPSX-1200 type box coating system. The coated TiO2, SiO2 films such as antireflective films with the system have the same performance reported by Leybold Co, 1992, along with a controllable refractive index and film structure.