瑞萨电子推出业界第一颗整合智能型手机近距离无线通信与安全性功能的微控制器

瑞萨电子率先于业界发表其微控制器（MCU）的第一项RF20系列产品-RF21S,在单一芯片上结合了近距离无线通信（NFC）控制器,支持ISO/IEC18092国际标准及安全性要件功能,可用于消费性电子产品,例如智能型手机及其他移动电话、笔记本电脑及PC周边连接装置。     

全球首款NFC智能手机键盘问世

近期,Elecom与挪威One2Touch公司共同开发的智能手机用NFC键盘"TK-FNS040BK"问世。据悉,TK-FNS040BK是一款利用近距离无线通信与智能手机连接的键盘,符合无线通信国际标准"NFCIP-1(ISO/IEC18092)"。该产品特点是无需蓝牙键盘要求的     

NFC成为移动支付主流技术

NFC（近距离无线通信）技术符合移动支付特性的要求。以安全性而言，NFC属于近距离通信技术．传输距离只有10-20cm，且为点对点传输．因此安全性相对较高。传输速率虽然最高只有424kbit／S，但移动支付不需要传输大量信息．因此不会造成应用的限制，而其具备小于15mA的低功耗优点．不会耗费太多的手机电源，更有利NFC...     

迎接手机支付时代的到来

前不久,诺基亚透露,其2011年推出的所有新款智能手机都将支持NFC（近距离无线通信）技术,而Google也宣布将在Android 2.3版支持NFC技术。     

TRF7970A：NFC有源和无源P2P通信参考设计

TI公司的TRF7970A是多协议全集成的13.56MHz RFID/NFC收发器IC,支持NFC标准NFCIP-1（ISO/IEC 18092）、NFCIP-2（ISO/IEC 21481）、ISO15693、ISO18000-3、ISO14443A/B以及FeliCa兼容,并集成编码器,译码器和数据成帧,工作电压2.7V－5.5V,可编程输出功率＋20dBm（100mW）、＋23dBm（200mW）。     

近距离无线通信技术及其应用

结合非接触识别与各种网络技术而发展的近距离无线通信技术（NFC），可以让各种消费电子设备在短距离内方便快捷地进行无线连接，与蓝牙、Wi—Fi等无线通信技术形成了互补。介绍了近距离无线通信技术的参数指标和技术特点，以及该技术在电子消费、购物、娱乐、数据交换等多个领域的应用，展望了近距离通信技术的应用前景。     

恩智浦推进NFC智能识别市场发展

NFC（近距离无线通信）是一种经过市场验证的技术,是由恩智浦（NXP）于2002年联合开发的技术。2004年,恩智浦与其他公司共同创立了NFC论坛,以推动业界所有利益相关方之间的合作及NFC技术标准化进程。此项技术由非接触式识别技术（RFID）和互联技术组合演变而成。     

NFC演绎未来便利生活

NFC有何魅力吸引众人目光? NFC(Near Field Communication)近距离无线通讯规格在2002年9月由Philips与Sony 联合制定,并已获得国际标准规格"ISO/IEC IS 18092"的认可.     

新一代NFC功能手机即将问世

恩智浦半导体电信设备及中兴通讯股份有限公司（ZTE）近日宣布双方携手合作,将恩智浦近距离无线通信（NFC）PN544技术应用到中兴手机中。中兴通讯计划将NFC芯片整合到其发展迅速的全球智能手机和非智能手机中,     

Tensilica宣布与多家设计中心签署合作协议

飞利浦公司（Philips）和SKTelecom公司近日宣布，将在近距离无线通信（NFC）技术的开发和部署上展开合作。两家公司旨在简化NFC应用在全球范围内的进程与部署，包括携手合作为网络运营商制定完整的NFC解决方案，以推动NFC全球的商业化并推出更多基于非接触式科技的应用。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.