Highly Efficient Electron‐Transporting/Injecting and Thermally Stable Naphthyridines for Organic Electrophosphorescent Devices

A series of 1,8‐naphthyridine derivatives is synthesized and their electron‐transporting/injecting (ET/EI) properties are investigated via a multilayered electrophosphorescent organic light‐emitting device (OLED) using fac‐tris(2‐phenylpyridine)iridium [Ir(ppy)₃] as a green phosphorescent emitter doped into a 4,4′‐N,N′‐dicarbazolebiphenyl (CBP) host with 4,4′‐bis[N‐(1‐naphthyl)‐N‐phenylamino]biphenyl (a‐NPD) as the hole‐transporting layer, and poly(arylene ether sulfone) containing tetraphenylbenzidine (TPDPES) doped with tris(4‐bromophenyl)ammonium hexachloroantimonate (TBPAH) as the hole‐injecting layer. The turn‐on voltage of the device is 2.5 V using 2,7‐bis[3‐(2‐phenyl)‐1,8‐naphthyridinyl]‐9,9‐dimethylfluorene (DNPF), lower than that of 3.0 V for the device using a conventional ET material. The maximum current efficiency (CE) and power efficiency (PE) of the DNPF device are much higher than those of a conventional device. With the aid of a hole‐blocking (HB) and exciton‐blocking layer of bathocuproine (BCP), 13.2–13.7% of the maximum external quantum efficiency (EQE) and a maximum PE of 50.2–54.5 lm W^?1 are obtained using the naphthyridine derivatives; these values are comparable with or even higher than the 13.6% for conventional ET material. The naphthyridine derivatives show high thermal stabilities, glass‐transition temperatures much higher than that of aluminum(III) bis(2‐methyl‐8‐quinolinato)‐4‐phenylphenolate (BAlq), and decomposition temperatures of 510–518 °C, comparable to or even higher than those of Alq₃.     

Solution‐Processed,Alkali Metal‐Salt‐Doped,Electron‐Transport Layers for High‐Performance Phosphorescent Organic Light‐Emitting Diodes

High‐performance, blue, phosphorescent organic light‐emitting diodes (PhOLEDs) are achieved by orthogonal solution‐processing of small‐molecule electron‐transport material doped with an alkali metal salt, including cesium carbonate (Cs₂CO₃) or lithium carbonate (Li₂CO₃). Blue PhOLEDs with solution‐processed 4,7‐diphenyl‐1,10‐phenanthroline (BPhen) electron‐transport layer (ETL) doped with Cs₂CO₃ show a luminous efficiency (LE) of 35.1 cd A^?1 with an external quantum efficiency (EQE) of 17.9%, which are two‐fold higher efficiency than a BPhen ETL without a dopant. These solution‐processed blue PhOLEDs are much superior compared to devices with vacuum‐deposited BPhen ETL/alkali metal salt cathode interfacial layer. Blue PhOLEDs with solution‐processed 1,3,5‐tris(m‐pyrid‐3‐yl‐phenyl)benzene (TmPyPB) ETL doped with Cs₂CO₃ have a luminous efficiency of 37.7 cd A^?1 with an EQE of 19.0%, which is the best performance observed to date in all‐solution‐processed blue PhOLEDs. The results show that a small‐molecule ETL doped with alkali metal salt can be realized by solution‐processing to enhance overall device performance. The solution‐processed metal salt‐doped ETLs exhibit a unique rough surface morphology that facilitates enhanced charge‐injection and transport in the devices. These results demonstrate that orthogonal solution‐processing of metal salt‐doped electron‐transport materials is a promising strategy for applications in various solution‐processed multilayered organic electronic devices.     

The Role of Transition Metal Oxides in Charge‐Generation Layers for Stacked Organic Light‐Emitting Diodes

The mechanism of charge generation in transition metal oxide (TMO)‐based charge‐generation layers (CGL) used in stacked organic light‐emitting diodes (OLEDs) is reported upon. An interconnecting unit between two vertically stacked OLEDs, consisting of an abrupt heterointerface between a Cs₂CO₃‐doped 4,7‐diphenyl‐1,10‐phenanthroline layer and a WO₃ film is investigated. Minimum thicknesses are determined for these layers to allow for simultaneous operation of both sub‐OLEDs in the stacked device. Luminance–current density–voltage measurements, angular dependent spectral emission characteristics, and optical device simulations lead to minimum thicknesses of the n‐type doped layer and the TMO layer of 5 and 2.5 nm, respectively. Using data on interface energetic determined by ultraviolet photoelectron and inverse photoemission spectroscopy, it is shown that the actual charge generation occurs between the WO₃ layer and its neighboring hole‐transport material, 4,4',4”‐tris(N‐carbazolyl)‐triphenyl amine. The role of the adjacent n‐type doped electron transport layer is only to facilitate electron injection from the TMO into the adjacent sub‐OLED.     

Highly Efficient p‐i‐n and Tandem Organic Light‐Emitting Devices Using an Air‐Stable and Low‐Temperature‐Evaporable Metal Azide as an n‐Dopant

Cesium azide (CsN₃) is employed as a novel n‐dopant because of its air stability and low deposition temperature. CsN₃ is easily co‐deposited with the electron transporting materials in an organic molecular beam deposition chamber so that it works well as an n‐dopant in the electron transport layer because its evaporation temperature is similar to that of common organic materials. The driving voltage of the p‐i‐n device with the CsN₃‐doped n‐type layer and a MoO₃‐doped p‐type layer is greatly reduced, and this device exhibits a very high power efficiency (57 lm W^?1). Additionally, an n‐doping mechanism study reveals that CsN₃ was decomposed into Cs and N₂ during the evaporation. The charge injection mechanism was investigated using transient electroluminescence and capacitance–voltage measurements. A very highly efficient tandem organic light‐emitting diodes (OLED; 84 cd A^?1) is also created using an n–p junction that is composed of the CsN₃‐doped n‐type organic layer/MoO₃ p‐type inorganic layer as the interconnecting unit. This work demonstrates that an air‐stable and low‐temperature‐evaporable inorganic n‐dopant can very effectively enhance the device performance in p‐i‐n and tandem OLEDs, as well as simplify the material handling for the vacuum deposition process.     

High‐Tg Carbazole Derivatives as Blue‐Emitting Hole‐Transporting Materials for Electroluminescent Devices

A series of dicarbazolyl derivatives bridged by various aromatic spacers and decorated with peripheral diarylamines were synthesized using Ullmann and Pd‐catalyzed C–N coupling procedures. These derivatives emit blue light in solution. In general, they possess high glass‐transition temperatures (T_g > 125 °C) which vary with the bridging segment and methyl substitution on the peripheral amine. Double‐layer organic light‐emitting devices were successfully fabricated using these molecules as hole‐transporting and emitting materials. Devices of the configuration ITO/HTL/TPBI/Mg:Ag (ITO: indium tin oxide; HTL: hole‐transporting layer; TPBI: 1,3,5‐tris(N‐phenylbenzimidazol‐2‐yl)benzene) display blue emission from the HTL layer. The EL spectra of these devices appear slightly distorted due to the exciplex formation at the interfaces. However, for the devices of the configuration ITO/HTL/Alq₃/Mg:Ag (Alq₃ = tris(8‐hydroxyquinoline)aluminum) a bright green light from the Alq₃ layer was observed. This clearly demonstrates the facile hole‐transporting property of the materials described here.     

Improving Performance of Perovskite Solar Cells Using [7]Helicenes with Stable Partial Biradical Characters as the Hole‐Extraction Layers

Organic–inorganic hybrid perovskites have realized a high power conversion efficiency (PCE) in both n–i–p and p–i–n device configurations. However, since the p–i–n structure exempts the sophisticated processing of charge‐transporting layers, it seems to possess better potential for practical applications than the n–i–p one. Currently, the inorganic NiO_x is the most prevailing hole‐transporting layer (HTL) used in p–i–n perovskite solar cells. Nevertheless, defects might exist on its surface to influence the charge transfer/extraction across the interface with perovskite and to affect the quality of the perovskite film grown on it. Herein, two novel [7]helicenes with stable open‐shell singlet biradical ground states at room temperature are demonstrated as an effective surface modifier of the NiO_x HTL. Their nonpolar feature effectively promotes the crystallinity of the perovskite film grown on them; meanwhile, their unique partial biradical character seems to provide a certain degree of defect passivation function at the perovskite interface to facilitate interfacial charge transfer/extraction. As a result, both 1ab‐ and 1bb‐modifed devices yield a PCE of >18%, exceeding the value (15.6%) of the control device using a sole NiO_x HTL, and the maximum PCE can reach 19%. Detailed characterizations are carefully conducted to understand the underlying reasons behind such enhancement.     

Boosting Performance of Non‐Fullerene Organic Solar Cells by 2D g‐C3N4 Doped PEDOT:PSS

The power‐conversion efficiency (PCE) of single‐junction organic solar cells (OSCs) has exceeded 16% thanks to the development of non‐fullerene acceptor materials and morphological optimization of active layer. In addition, interfacial engineering always plays a crucial role in further improving the performance of OSCs based on a well‐established active‐layer system. Doping of graphitic carbon nitride (g‐C₃N₄) into poly(3,4‐ethylene‐dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as a hole transport layer (HTL) for PM6:Y6‐based OSCs is reported, boosting the PCE to almost 16.4%. After being added into the PEDOT:PSS, the g‐C₃N₄ as a Bronsted base can be protonated, weakening the shield effect of insulating PSS on conductive PEDOT, which enables exposures of more PEDOT chains on the surface of PEDOT:PSS core‐shell structure, and thus increasing the conductivity. Therefore, at the interface between g‐C₃N₄ doped HTL and PM6:Y6 layer, the charge transport is improved and the charge recombination is suppressed, leading to the increases of fill factor and short‐circuit current density of devices. This work demonstrates that doping g‐C₃N₄ into PEDOT:PSS is an efficient strategy to increase the conductivity of HTL, resulting in higher OSC performance.     

Electric‐Field‐Assisted Charge Generation and Separation Process in Transition Metal Oxide‐Based Interconnectors for Tandem Organic Light‐Emitting Diodes

The charge generation and separation process in transition metal oxide (TMO)‐based interconnectors for tandem organic light‐emitting diodes (OLEDs) is explored using data on electrical and spectral emission properties, interface energetics, and capacitance characteristics. The TMO‐based interconnector is composed of MoO₃ and cesium azide (CsN₃)‐doped 4,7‐diphenyl‐1,10‐phenanthroline (BPhen) layers, where CsN₃ is employed to replace the reactive metals as an n‐dopant due to its air stability and low deposition temperature. Experimental evidences identify that spontaneous electron transfer occurs in a vacuum‐deposited MoO₃ layer from various defect states to the conduction band via thermal diffusion. The external electric‐field induces the charge separation through tunneling of generated electrons and holes from MoO₃ into the neighboring CsN₃‐doped BPhen and hole‐transporting layers, respectively. Moreover, the impacts of constituent materials on the functional effectiveness of TMO‐based interconnectors and their influences on carrier recombination processes for light emission have also been addressed.     

Dependence of Light‐Emitting Characteristics of Blue Phosphorescent Organic Light‐Emitting Diodes on Electron Injection and Transport Materials

We investigate the light‐emitting performances of blue phosphorescent organic light‐emitting diodes (PHOLEDs) with three different electron injection and transport materials, that is, bathocuproine(2,9‐dimethyl‐4,7‐diphenyl‐1,10‐phenanthroline) (Bphen), 1,3,5‐tri(m‐pyrid‐3‐yl‐phenyl)benzene (Tm3PyPB), and 2,6‐bis(3‐(carbazol‐9‐yl)phenyl)pyridine (26DCzPPy), which are partially doped with cesium metal. We find that the device characteristics are very dependent on the nature of the introduced electron injection layer (EIL) and electron transporting layer (ETL). When the appropriate EIL and ETL are combined, the peak external quantum efficiency and peak power efficiency improve up to 20.7% and 45.6 lm/W, respectively. Moreover, this blue PHOLED even maintains high external quantum efficiency of 19.6% and 16.9% at a luminance of 1,000 cd/m² and 10,000 cd/m², respectively.     

Influence of Hole‐Transport Layers and Donor Materials on Open‐Circuit Voltage and Shape of I–V Curves of Organic Solar Cells

The effect of injection and extraction barriers on flat heterojunction (FHJ) and bulk heterojunction (BHJ) organic solar cells is analyzed. The barriers are realized by a combination of p‐type materials with HOMOs varying between –5.0 and –5.6 eV as hole‐transport layer (HTL) and as donor in vacuum‐evaporated multilayer p‐i‐metal small‐molecule solar cells. The HTL/donor interface can be seen as a model for the influence of contacts in organic solar cells in general. Using drift‐diffusion simulations we are well able to reproduce and explain the experimental I–V curves qualitatively. In FHJ solar cells the open‐circuit voltage (V_oc) is determined by the donor and is independent of the HTL. In BHJ solar cells, however, V_oc decreases if injection barriers are present. This different behavior is caused by a blocking of the charge carriers at a spatially localized donor/acceptor heterojunction, which is only present in the FHJ solar cells. The forward current is dominated by the choice of HTL. An energy mismatch in the HOMOs leads to kinks in the I–V curves in the cases for which V_oc is independent of the HTL.     

n‐Doping of a Low‐Electron‐Affinity Polymer Used as an Electron‐Transport Layer in Organic Light‐Emitting Diodes

n‐Doping electron‐transport layers (ETLs) increases their conductivity and improves electron injection into organic light‐emitting diodes (OLEDs). Because of the low electron affinity and large bandgaps of ETLs used in green and blue OLEDs, n‐doping has been notoriously more difficult for these materials. In this work, n‐doping of the polymer poly[(9,9‐dioctylfluorene‐2,7‐diyl)‐alt‐(benzo[2,1,3]thiadiazol‐4,7‐diyl)] (F8BT) is demonstrated via solution processing, using the air‐stable n‐dopant (pentamethylcyclopentadienyl)(1,3,5‐trimethylbenzene)ruthenium dimer [RuCp*Mes]₂. Undoped and doped F8BT films are characterized using ultraviolet and inverse photoelectron spectroscopy. The ionization energy and electron affinity of the undoped F8BT are found to be 5.8 and 2.8 eV, respectively. Upon doping F8BT with [RuCp*Mes]₂, the Fermi level shifts to within 0.25 eV of the F8BT lowest unoccupied molecular orbital, which is indicative of n‐doping. Conductivity measurements reveal a four orders of magnitude increase in the conductivity upon doping and irradiation with ultraviolet light. The [RuCp*Mes]₂‐doped F8BT films are incorporated as an ETL into phosphorescent green OLEDs, and the luminance is improved by three orders of magnitude when compared to identical devices with an undoped F8BT ETL.     

Highly Efficient Simple‐Structure Blue and All‐Phosphor Warm‐White Phosphorescent Organic Light‐Emitting Diodes Enabled by Wide‐Bandgap Tetraarylsilane‐Based Functional Materials

Two host materials of {4‐[diphenyl(4‐pyridin‐3‐ylphenyl)silyl]phenyl}diphenylamine (p‐PySiTPA) and {4‐[[4‐(diphenylphosphoryl)phenyl](diphenyl)silyl]phenyl}diphenylamine (p‐POSiTPA), and an electron‐transporting material of [(diphenylsilanediyl)bis(4,1‐phenylene)]bis(diphenylphosphine) dioxide (SiDPO) are developed by incorporating appropriate charge transporting units into the tetraarylsilane skeleton. The host materials feature both high triplet energies (ca. 2.93 eV) and ambipolar charge transporting nature; the electron‐transporting material comprising diphenylphosphine oxide units and tetraphenylsilane skeleton exhibits a high triplet energy (3.21 eV) and a deep highest occupied molecular orbital (HOMO) level (‐6.47 eV). Using these tetraarylsilane‐based functional materials results in a high‐efficiency blue phosphorescent device with a three‐organic‐layer structure of 1,1‐bis[4‐[N,N‐di(p‐tolyl)‐amino]phenyl]cyclohexane (TAPC)/p‐POSiTPA: iridium(III) bis(4′,6′‐difluorophenylpyridinato)tetrakis(1‐pyrazolyl)borate (FIr6)/SiDPO that exhibits a forward‐viewing maximum external quantum efficiency (EQE) up to 22.2%. This is the first report of three‐organic‐layer FIr6‐based blue PhOLEDs with the forward‐viewing EQE over 20%, and the device performance is among the highest for FIr6‐based blue PhOLEDs even compared with the four or more than four organic‐layer devices. Furthermore, with the introduction of bis(2‐(9,9‐diethyl‐9H‐fluoren‐2‐yl)‐1‐phenyl‐1H‐benzoimidazol‐N,C³)iridium acetylacetonate [(fbi)₂Ir(acac)] as an orange emitter, an all‐phosphor warm‐white PhOLED achieves a peak power efficiency of 47.2 lm W^?1, which is close to the highest values ever reported for two‐color white PhOLEDs.     

A New Carbazole‐Constructed Hyperbranched Polymer: Convenient One‐Pot Synthesis,Hole‐Transporting Ability,and Field‐Effect Transistor Properties

A new hyperbranched polymer ( HB‐car ), constructed fully by carbazole moieties, is successfully synthesized through a one‐pot Suzuki coupling reaction. The resultant polymer is well‐characterized, and its hole‐transporting ability is studied carefully. The device, in which HB‐car is utilized as a hole‐transporting layer and tris‐(8‐hydroxyquinoline) aluminum as an electron‐emitting layer as well as electron‐transporting layer, gives a much higher efficiency (3.05 cd A^–1), than that of a poly(N‐vinylcarbazole) based device (2.19 cd A^–1) under similar experimental conditions. The remarkable performance is attributed to its low energy barrier and enhanced hole‐drifting ability in the HB‐car based device. In addition, for the first time, a field‐effect transistor (FET) based on the hyperbranched polymer is fabricated, and the organic FET device shows that HB‐car is a typical p‐type FET material with a saturation mobility of 1 × 10^–5 cm² V^–1 s^–1, a threshold voltage of –47.1 V, and an on‐to‐off current ratio of 10³.     

Nanodot‐Enhanced High‐Efficiency Pure‐White Organic Light‐Emitting Diodes with Mixed‐Host Structures

A relatively high‐efficiency, fluorescent pure‐white organic light‐emitting diode was fabricated using a polysilicic acid (PSA) nanodot‐embedded polymeric hole‐transporting layer (HTL). The diode employed a mixed host in the single emissive layer, which comprised 0.5 wt % yellow 5,6,11,12‐tetra‐phenylnaphthacene doped in the mixed host of 50 % 2‐(N,N‐diphenyl‐amino)‐6‐[4‐(N,N‐diphenylamino)styryl]naphthalene and 50 % N,N′‐bis‐(1‐naphthyl)‐N,N′‐diphenyl‐1,10‐biphenyl‐4‐4′‐diamine. By incorporating 7 wt % 3 nm PSA nanodot into the HTL of poly(3,4‐ethylene‐dioxythiophene)‐poly‐(styrenesulfonate), the efficiency at 100 cd m^–2 was increased from 13.5 lm W^–1 (14.7 cd A^–1; EQE: 7.2 %) to 17.1 lm W^–1 (17.6 cd A^–1; EQE: 8.3 %). The marked efficiency improvement may be attributed to the introduction of the PSA nanodot, leading to a better carrier‐injection‐balance.     

High‐Performance,Phosphorescent, Top‐Emitting Organic Light‐Emitting Diodes with p–i–n Homojunctions

High‐performance, green, orange, and red top‐emitting organic light‐emitting diodes (TOLEDs) with p–i–n homojunction are demonstrated. An excellent ambipolar host, 2,5‐bis(2‐(9H‐carbazol‐9‐yl)phenyl)‐1,3,4‐oxadiazole (o‐CzOXD), which has good thermal and morphological stabilities, a high triplet energy level, and equally high electron and hole mobilities, is chosen as the organic host material for the homojunction devices. By electrical doping, the carrier injection and transporting characteristics are greatly improved. The optical structure is optimized in view of light emission of different colors to enhance the color purity and improve the view characte­ristics. As a result, high efficiency p–i–n homojunction TOLEDs with saturated intrinsic emission of the emitting materials and angular independence of the emission are realized. The performances of these p–i–n homojunction TOLEDs are even higher than the multi‐layer heterojunction bottom‐emitting devices using the same emitting layers.     

Charge‐Transporting Polymers based on Phenylbenzoimidazole Moieties

A series of novel styrene functionalized monomers with phenylbenzo[d]imidazole units and the corresponding homopolymers are prepared. These side‐chain polymers show high glass‐transition temperatures that even exceed the corresponding value for the common electron‐transporting material 1,3,5‐tris(1‐phenyl‐1H‐benzo[d]imidazol‐2‐yl)benzene (TPBI). Similar electronic behavior between the polymers and TPBI is shown. The polymers are used as matrices for phosphorescent dopants. The fabricated devices exhibit current efficiencies up to 38.5 cd A^?1 at 100 cd m^?2 and maximum luminances of 7400 cd m^?2 at 10 V with a minimum turn‐on voltage as low as 2.70 V in single‐layer devices with an ITO/PEDOT:PSS anode (ITO = indium tin oxide, PEDOT:PSS = poly(3,4‐ethylenedioxythiophene) doped with poly(styrenesulfonate)) and a CsF/Ca/Ag cathode.     

Photophysics of Molecular‐Weight‐Induced Losses in Indacenodithienothiophene‐Based Solar Cells

The photovoltaic performance and optoelectronic properties of a donor–acceptor copolymer are reported based on indacenodithienothiophene (IDTT) and 2,3‐bis(3‐(octyloxy)phenyl)quinoxaline moieties (PIDTTQ) as a function of the number‐average molecular weight (M_n). Current–voltage measurements and photoinduced charge carrier extraction by linear increasing voltage (photo‐CELIV) reveal improved charge generation and charge transport properties in these high band gap systems with increasing M_n, while polymers with low molecular weight suffer from diminished charge carrier extraction because of low mobility–lifetime (μτ) product. By combining Fourier‐transform photocurrent spectroscopy (FTPS) with electroluminscence spectroscopy, it is demonstrate that increasing M_n reduces the nonradiative recombination losses. Solar cells based on PIDTTQ with M_n = 58 kD feature a power conversion efficiency of 6.0% and a charge carrier mobility of 2.1 × 10^?4 cm² V^?1 s^?1 when doctor bladed in air, without the need for thermal treatment. This study exhibits the strong correlations between polymer fractionation and its optoelectronics characteristics, which informs the polymer design rules toward highly efficient organic solar cells.     

Unexpected Propeller‐Like Hexakis(fluoren‐2‐yl)benzene Cores for Six‐Arm Star‐Shaped Oligofluorenes: Highly Efficient Deep‐Blue Fluorescent Emitters and Good Hole‐Transporting Materials

Grafting six fluorene units to a benzene ring generates a new highly twisted core of hexakis(fluoren‐2‐yl)benzene. Based on the new core, six‐arm star‐shaped oligofluorenes from the first generation T1 to third generation T3 are constructed. Their thermal, photophysical, and electrochemical properties are studied, and the relationship between the structures and properties is discussed. Simple double‐layer electroluminescence (EL) devices using T1–T3 as non‐doped solution‐processed emitters display deep‐blue emissions with Commission Internationale de l'Eclairage (CIE) coordinates of (0.17, 0.08) for T1 , (0.16, 0.08) for T2 , and (0.16, 0.07) for T3 . These devices exhibit excellent performance, with maximum current efficiency of up to 5.4 cd A^?1, and maximum external quantum efficiency of up to 6.8%, which is the highest efficiency for non‐doped solution‐processed deep‐blue organic light‐emitting diodes (OLEDs) based on starburst oligofluorenes, and is even comparable with other solution‐processed deep‐blue fluorescent OLEDs. Furthermore, T2‐ and T3‐ based devices show striking blue EL color stability independent of driving voltage. In addition, using T0–T3 as hole‐transporting materials, the devices of indium tin oxide (ITO)/poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS)/ T0–T3 /tris(8‐hydroxyquinolinato)aluminium (Alq₃)/LiF/Al achieve maximum current efficiencies of 5.51–6.62 cd A^?1, which are among the highest for hole‐transporting materials in identical device structure.     

Self‐assembled Electroactive Phosphonic Acids on ITO: Maximizing Hole‐Injection in Polymer Light‐Emitting Diodes

In order to fulfill the promise of organic electronic devices, performance‐limiting factors, such as the energetic discontinuity of the material interfaces, must be overcome. Here, improved performance of polymer light‐emitting diodes (PLEDs) is demonstrated using self‐assembled monolayers (SAMs) of triarylamine‐based hole‐transporting molecules with phosphonic acid‐binding groups to modify the surface of the indium tin oxide (ITO) anode. The modified ITO surfaces are used in multilayer PLEDs, in which a green‐emitting polymer, poly[2,7‐(9,9‐dihexylfluorene)‐co‐4,7‐(2,1,3‐benzothiadiazole)] (PFBT5), is sandwiched between a thermally crosslinked hole‐transporting layer (HTL) and an electron‐transporting layer (ETL). All tetraphenyl‐diamine (TPD)‐based SAMs show significantly improved hole‐injection between ITO and the HTL compared to oxygen plasma‐treated ITO and simple aromatic SAMs on ITO. The device performance is consistent with the hole‐transporting properties of triarylamine groups (measured by electrochemical measurements) and improved surface energy matching with the HTL. The turn‐on voltage of the devices using SAM‐modified anodes can be lowered by up to 3 V compared to bare ITO, yielding up to 18‐fold increases in current density and up to 17‐fold increases in brightness at 10 V. Variations in hole‐injection and turn‐on voltage between the different TPD‐based molecules are attributed to the position of alkyl‐spacers within the molecules.     

A Hole‐Transporting Material with Controllable Morphology Containing Binaphthyl and Triphenylamine Chromophores

An organic compound with two triphenylamine moieties linked with binaphthyl at the 3,3′‐positions (2,2′‐dimethoxyl‐3,3′‐ di(phenyl‐4‐yl‐diphenyl‐amine)‐[1,1′]‐binaphthyl, TPA–BN–TPA) can be synthesized by Suzuki coupling. Amorphous and homogeneous films are obtained by either vacuum deposition or spin‐coating from solution in good solvents, while single crystals are grown in an appropriate polar solvent. X‐ray crystallography showed that a TPA–BN–TPA crystal is a multichannel structure containing solvent molecules in the channels. The intramolecular charge‐transfer state resulting from amino conjugation effects is observed by solvatochromic experiments. The high glass‐transition temperature (130 °C) and decomposition temperature (439 °C) of this material, in combination with its reversible oxidation property, make it a promising candidate as a hole‐transport material for light‐emitting diodes. With TPA–BN–TPA as the hole‐transporting layer in an indium tin oxide/TPA–BN–TPA/aluminum tris(8‐hydroxyquinoline)/Mg:Ag device, a brightness of about 10 100 cd m^–2 at 15.6 V with a maximum efficiency of 3.85 cd A^–1 is achieved, which is superior to a device with N,N′‐di(1‐naphthyl)‐N,N′‐diphenyl‐[1,1′‐biphenyl]‐4,4′‐diamine as the hole‐transporting layer under the same conditions. Other devices with TPA–BN–TPA as the blue‐light‐emitting layer or host for a blue dye emitter are also studied.