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CAIDao-lin ZHENGJia-gui WULi-li FENGLiang-huan ZHANGJing-quan CAIYa-Ping CAIWei LIWei XIAGeng-pei YANQiang 《半导体光子学与技术》2003,9(2):95-98
ZnTe/ZnTe:Cu layer is used as a complex back contact.The parmeters of CdTe solar cells with and without the complex back contacts are compared.The effects of un-doped layer thickness,doped concentration and post-deposition annealing temperature of the complex layer on solar cells preformance are investigated.The results show that ZnTe/ZnTe:Cu layer can improve back contacts and largely increase the conversion efficiency of CdTe solar cells.Un-doped layer and post-deposition annealing of high temperature can increase open voltage.Using the complex back contact,a small CdTe cell with fill factor of 73.14% and conversion efficiency of 12.93% is obtained. 相似文献
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Copper thiocyanate (CuSCN) has proven to be a low‐cost, efficient hole‐transporting material for the emerging organic–inorganic perovskite solar cells. Herein, we report that CuSCN can also be applied to CdTe thin‐film solar cells to achieve high open‐circuit voltages (VOCs). By optimizing the thickness of the thermally evaporated CuSCN films, CdTe cells fabricated by close space sublimation in the superstrate configuration have achieved VOCs as high as 872 mV, which is about 20–25 mV higher than the highest VOC for the reference cells using the standard Cu/Au back contacts. CuSCN is a wide bandgap p‐type conductor with a conduction band higher than that of CdTe, leading to a conduction band offset that reflects electrons in CdTe, partially explaining the improved VOCs. However, due to the low conductivity of CuSCN, CdTe cells using CuSCN/Au back contacts exhibited slightly lower fill factors than the cells using Cu/Au back contacts. With optimized CdS:O window layers, the power conversion efficiency of the best CdTe cell, using CuSCN/Au back contact, is 14.7%: slightly lower than that of the best cell (15.2%) using Cu/Au back contact. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
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Copper migration in cdte heterojunction solar cells 总被引：1，自引：0，他引：1
H. C. Chou A. Rohatgi N. M. Jokerst E. W. Thomas S. Kamra 《Journal of Electronic Materials》1996,25(7):1093-1098
CdTe solar cells were fabricated by depositing a Au/Cu contact with Cu thickness in the range of 50 to 150Å on polycrystalline CdTe/CdS/SnO2/glass structures. The increase in Cu thickness improves ohmic contact and reduces series resistance (Rs), but the excess Cu tends to diffuse into CdTe and lower shunt resistance (Rsh) and cell performance. Light I-V and secondary ion mass spectros-copy (SIMS) measurements were performed to understand the correlations between the Cu contact thickness, the extent of Cu incorporation in the CdTe cells, and its impact on the cell performance. The CdTe/CdS/SnO2/glass, CdTe/ CdS/GaAs, and CdTe/GaAs structures were prepared in an attempt to achieve CdTe films with different degrees of crystallinity and grain size. A large grain polycrystalline CdTe thin film solar cell was obtained for the first time by selective etching the GaAs substrate coupled with the film transfer onto a glass substrate. SIMS measurement showed that poor crystallinity and smaller grain size of the CdTe film promotes Cu diffusion and decreases the cell performance. Therefore, grain boundaries are the main conduits for Cu migration and larger CdTe grain size or alternate method of contact formation can mitigate the adverse effect of Cu and improve the cell performance. 相似文献
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Yixiong Ji Xiangyun Zhao Yining Pan Zhenghua Su Jinhong Lin Eser Metin Akinoglu Yang Xu Heyou Zhang Pengjun Zhao Yue Dong Xingzhan Wei Fangyang Liu Paul Mulvaney 《Advanced functional materials》2023,33(11):2211421
Optimization of the back contact interface is crucial for improving the performance of Cu2ZnSnS4 (CZTS) thin film solar cells. In this paper, self-depleted CuSCN is deployed as an intermediate layer at the Mo/CZTS interface to improve the quality of the back contact. This CuSCN layer, obtained via aqueous solution processing, reduces the thickness of Mo(S,Se)2 and eliminates multi-layer crystallization of the absorber by suppressing the undesirable reaction between Mo and Se during the selenization process. By regulating the selenium infiltration into the CZTS precursor films during the selenization process, highly crystalline, single-layer Cu2ZnSn(S,Se)4 (CZTSSe) absorber layers are realized. The single-layer CZTSSe absorber exhibits reduced carrier recombination, enhanced carrier density and increased work function. The improved back contact and absorber layer enables 11.1% power-conversion-efficiency to be achieved. 相似文献
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碲化锌插入层对碲化镉太阳电池性能参数影响的分析 总被引：5，自引：1，他引：4
分析了有Zn Te/ Zn Te∶Cu插入层的Cd Te太阳电池在能带结构上的变化.通过对比有无插入层的Cd Te太阳电池在C- V特性、I- V特性、光谱响应上的不同,肯定了插入层对改善背接触特性的作用,发现它还可以改善器件前结Cd S/ Cd Te的二极管特性和短波光谱响应.实验结果还表明,不掺杂的Zn Te对提高器件的效率是必要的.恰当的不掺杂层厚度和退火温度能有效地改进Cd Te太阳电池的性能,而对填充因子的提高最为显著 相似文献
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Steven Hegedus Darshini Desai Chris Thompson 《Progress in Photovoltaics: Research and Applications》2007,15(7):587-602
The voltage dependence of the photocurrent JL(V) of CdTe/CdS solar cells has been characterized by separating the forward current from the photocurrent at several illumination intensities. JL(V) reduces the fill factor (FF) of typical cells by 10–15 points, the open circuit voltage (VOC) by 20–50 mV, and the efficiency by 2–4 points. Eliminating the effect of JL(V) establishes superposition between light and dark J(V) curves for some cells. Two models for voltage dependent collection give reasonable fits to the data: (1) a single carrier Hecht model developed for drift collection in p‐i‐n solar cells in which fitting yields a parameter consistent with lifetimes of 10−9 s as measured by others; or (2) the standard depletion region and bulk diffusion length model fits almost as well. The simple Hecht‐like drift collection model for photocurrent gives very good agreement to J(V) curves measured under AM1·5 light on CdTe/CdS solar cells with FF from 53% to 70%, CdTe thickness from 1·8 to 7·0 µm, in initial and stressed states. Accelerated thermal and bias stressing increases JL(V) losses as does insufficient Cu. This method provides a new metric for tracking device performance, characterizes transport in the high field depletion region, and quantifies a significant FF loss in CdTe solar cells. Copyright © 2007 John Wiley & Sons, Ltd. 相似文献
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Anita Wing Yi Ho Stuart R. Wenham 《Progress in Photovoltaics: Research and Applications》2004,12(4):297-308
A new rear contacting scheme using low‐temperature processes to form localised contacts without the use of photolithography has been developed. It uses randomly nucleated, aluminium‐induced, localised regions of solid phase epitaxial growth of p + silicon onto the rear surface of a wafer through a thick rear surface passivating oxide. This rear contacting technique has been applied on solar cells with front buried contacts and results have shown that a suitable ohmic contact to the rear can be formed through oxide as thick as 3000 Å and using only low temperature sintering below the eutectic temperature of silicon and aluminium. This low‐temperature sintering avoids the destruction of the interfacial oxide which has been shown to provide good surface passivation for the rear of the solar cells. Microscopic images indicate the possibility of forming p + rear contacts with aluminium‐induced crystallisation, but without requiring any additional deposition of silicon. The source of silicon for the latter appears to be from the reduction of the silicon dioxide by the aluminium. Copyright © 2004 John Wiley & Sons, Ltd. 相似文献
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Johannes Türck Hermann‐Josef Nonnenmacher Paula M. L. Connor Sebastian Siol Bastian Siepchen Jan Peter Heimfarth Andreas Klein Wolfram Jaegermann 《Progress in Photovoltaics: Research and Applications》2016,24(9):1229-1236
In this paper a promising solution for the notorious problem of manufacturing a stable low ohmic back contact of a CdTe thin film superstrate solar cell is presented without using elemental copper. Instead we have used a Cu2O layer inserted between the CdTe absorber and metal contact (Au). In contrast to the barrier free band alignment gained by using the transitivity rules, XPS measurements show a barrier in the valence band of the Cu2O layers directly after deposition, which results in a low performing JV curve. The contact can be improved by a short thermal treatment resulting in efficiencies superior to copper based contacts for standard CdS/CdTe hetero junction solar cells prepared on commercial glass/FTO substrates. By replacing the CdS window layer with a CdS:O buffer layer efficiencies of >15% could be achieved. Copyright © 2016 John Wiley & Sons, Ltd. 相似文献
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A. N. Tiwari G. Khrypunov F. Kurdzesau D. L. Btzner A. Romeo H. Zogg 《Progress in Photovoltaics: Research and Applications》2004,12(1):33-38
Polycrystalline thin‐film CdTe/CdS solar cells have been developed in a configuration in which a transparent conducting layer of indium tin oxide (ITO) has been used for the first time as a back electrical contact on p‐CdTe. Solar cells of 7·9% efficiency were developed on SnOx:F‐coated glass substrates with a low‐temperature (<450°C) high‐vacuum evaporation method. After the CdCl2 annealing treatment of the CdTe/CdS stack, a bromine methanol solution was used for etching the CdTe surface prior to the ITO deposition. The unique features of this solar cell with both front and back contacts being transparent and conducting are that the cell can be illuminated from either or both sides simultaneously like a ‘bi‐facial’ cell, and it can be used in tandem solar cells. The solar cells with transparent conducting oxide back contact show long‐term stable performance under accelerated test conditions. Copyright © 2004 John Wiley & Sons, Ltd. 相似文献
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Chunfang Xing;Conghui Jiang;Wenbo Gu;Xinliang Lou;Kun Gao;Yuhang Song;Beibei Shao;Kun Li;Xinyu Wang;Dacheng Xu;Xiaohong Zhang;Yusheng Wang;Xinbo Yang;Baoquan Sun; 《Progress in Photovoltaics: Research and Applications》2024,32(1):35-44
Wide-bandgap metal compound-based dopant-free passivating contacts have been explored to fabricate crystalline silicon (Si) solar cells to mitigate the high carrier recombination rate of metal-Si contact directly. Here, an over 4-nm-thick single-layer strontium fluoride (SrFx) and a double-layer SrFx/lithium fluoride (LiF) films deposited by a facile vacuum thermal evaporation are developed to act as high-performance electron-selective contacts. SrFx with ultra-low work function (2.8 eV) induces a strong downward band bending at the n-type Si (n-Si)/SrFx interface, and a dipole active layer exists at the SrFx/aluminum (Al) interface, enabling a low contact resistivity (ρc) of 34.1 mΩ cm2 and thus yielding an impressive fill factor (FF) of 82.8%. Eventually, a power conversion efficiency (PCE) of 20.1% is achieved in the SrFx-based solar cell. Moreover, in the n-Si/SrFx/LiF/Al contact, the diffusion of Li in the SrFx film favors facilitating electron transport as well as relaxing its thickness restriction, inhibiting carrier recombination. And an impressive FF of 83.7% with a low ρc of 25.9 mΩ cm2, an improved open-circuit voltage of 631 mV, and a short-circuit current density of 39.9 mA/cm2 are attained, resulting in a champion PCE of 21.1%. Double-layer SrFx/LiF deposited by a simple process provides a grand opportunity to fabricate low-cost and high-PCE photovoltaic devices. 相似文献
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Feng Jiang Jinjin Liu Yunchao Li Louzhen Fan Yuqin Ding Yongfang Li 《Advanced functional materials》2012,22(11):2402-2411
A novel catalyst‐free synthetic strategy for producing high‐quality CdTe nanowires in solution is proposed. A special reaction condition is intentionally constructed in the reaction system to induce the formation of nanowires through oriented in situ assembly of tiny particles. To establish such special synthetic conditions in the CdTe system, not only are its typical features and possible solutions deeply analyzed, but also related factors, such as the ligand environment, injection and growth temperature, and Cd‐to‐Te precursor ratio, are systemically investigated. High‐quality ultralong (up to 10 μm) and ultrathin (less than 10 nm) CdTe nanowires are produced in solution under optimal reaction conditions. Morphological, spectral, and compositional analyses are performed to examine the products formed at different reaction stages in order to clarify the formation mechanism of the CdTe nanowires. Furthermore, the transformation of the CdTe nanowires into CdTe/CdSe core–shell heterostructures is intensively explored, and the CdSe epitaxial growth process is specially tracked by morphological and spectral characterization techniques. Finally, CdTe nanowires coated with a continuous and dense CdSe shell are successfully fabricated by using a proper coating protocol. 相似文献
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报道了采用局部背接触结构的激光刻槽埋栅太阳电池的研究结果.模拟分析了局部背接触结构的作用,设计了合理的电池结构.通过工艺优化,得到了转换效率达到17.28%(大气质量AM=1.5 G,VOC=650.4mV,JSC=33.15 mA/cm2,FF=0.8014,电池面积为4 cm2)的太阳电池. 相似文献
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Christina Gretener Julian Perrenoud Lukas Kranz Luisa Kneer Rafael Schmitt Stephan Buecheler Ayodhya N. Tiwari 《Progress in Photovoltaics: Research and Applications》2013,21(8):1580-1586
The ability to grow efficient CdTe/CdS solar cells in substrate configuration would not only allow for the use of non‐transparent and flexible substrates but also enable a better control of junction formation. Yet, the problems of barrier formation at the back contact as well as the formation of a p–n junction with reduced recombination losses have to be solved. In this work, CdTe/CdS solar cells in substrate configuration were developed, and the results on different combinations of back contact materials are presented. The Cu content in the electrical back contact was found to be a crucial parameter for the optimal CdCl2‐treatment procedure. For Cu‐free cells, two activation treatments were applied, whereas Cu‐containing cells were only treated once after the CdTe deposition. A recrystallization behavior of the CdTe layer upon its activation similar to superstrate configuration was found; however, no CdTe–CdS intermixing could be observed when the layers were treated consecutively. Remarkably high VOC and fill factor of 768 mV and 68.6%, respectively, were achieved using a combination of MoO3, Te, and Cu as back contact buffer layer resulting in 11.3% conversion efficiency. With a Cu‐free MoO3/Te buffer material, a VOC of 733 mV, a fill factor of 62.3%, and an efficiency of 10.0% were obtained. Copyright © 2012 John Wiley & Sons, Ltd. 相似文献
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Antonio Gaetano Ricciardulli Sheng Yang Gert‐Jan A. H. Wetzelaer Xinliang Feng Paul W. M. Blom 《Advanced functional materials》2018,28(14)
The research on transparent conductive electrodes is in rapid ascent in order to respond to the requests of novel optoelectronic devices. The synergic coupling of silver nanowires (AgNWs) and high‐quality solution‐processable exfoliated graphene (EG) enables an efficient transparent conductor with low‐surface roughness of 4.6 nm, low sheet resistance of 13.7 Ω sq?1 at high transmittance, and superior mechanical and chemical stabilities. The developed AgNWs–EG films are versatile for a wide variety of optoelectronics. As an example, when used as a bottom electrode in organic solar cell and polymer light‐emitting diode, the devices exhibit a power conversion efficiency of 6.6% and an external quantum efficiency of 4.4%, respectively, comparable to their commercial indium tin oxide counterparts. 相似文献