Simulation of characteristics of a SiO2/c-axis-oriented LiNbO3/diamond surface acoustic wave

High-frequency surface acoustic wave (SAW) devices based on diamond that have been realized to date utilize c-axis-oriented ZnO as the piezoelectric thin film. This material, with SiO2 overlay, shows excellent characteristics of a high phase velocity of over 10,000 m/s and a zero temperature coefficient, and it has been successfully applied to high-frequency SAW filters and resonators. To expand on materials used on diamond, the theoretical calculation has been carried out for LiNbO3/diamond, and a high electromechanical coupling coefficient up to 9.0% is expected. In this work, the characteristics of SiO2/LiNbO3/diamond were studied by computer simulation, emphasizing a zero temperature coefficient with a high coupling coefficient. Calculations are carried out for the phase velocity, the electromechanical coupling coefficient, and the temperature coefficient of the Rayleigh wave and its higher mode Sezawa wave. As a result, SiO2/IDT/LiNbO3/diamond is found to offer a zero temperature coefficient with a very high coupling coefficient up to 10.1% in conjunction with a high phase velocity of 12,100 m/s.     

Theoretical study on SAW characteristics of layered structuresincluding a diamond layer

Diamond has the highest surface acoustic wave (SAW) velocity among all materials and thus can provide much advantage for fabrication of high frequency SAW devices when it is combined with a piezoelectric thin film. Basic SAW properties of layered structures consisting of a piezoelectric material layer, a diamond layer and a substrate were examined by theoretical calculation. Rayleigh mode SAW's with large SAW velocities up to 12,000 m/s and large electro-mechanical coupling coefficients from 1 to 11% were found to propagate in ZnO/diamond/Si, LiNbO₃/diamond/Si and LiTaO₃/diamond/Si structures. It was also found that a SiO₂/ZnO/diamond/Si structure can realize a zero temperature coefficient of frequency with a high phase velocity of 8,000-9,000 m/s and a large electro-mechanical coupling coefficient of up to 4%     

Theoretical investigation of surface acoustic wave in the new, three-layered structure: ZnO/AlN/diamond

The new layered structure, ZnO/AlN/diamond, for surface acoustic wave (SAW) devices is investigated for gigahertz-band applications. This structure combines the advantages of both piezoelectric materials, with a high electromechanical coupling coefficient (K2) of ZnO and high acoustic velocity of AlN. Theoretical results show that Rayleigh mode SAWs with large phase velocities up to 12,200 m/s and large K2 from 1 to 3% were generated with this new structure.     

Growth of A1N piezoelectric film on diamond for high-frequency surface acoustic wave devices

Diamond films are very desirable for application to SAW devices because of their high acoustic wave velocity, which allows the extending of the frequency limit of operation at a given interdigital transducer line-width resolution. Use of high-quality AIN as the piezoelectric layer in conjunction with diamond is also desirable because of its high SAW velocity--the highest among all piezoelectric materials--together with its excellent electrical, mechanical, and chemical properties. The problems arising in the growth of A1N films on diamond have prevented, until now, the use of this combination of materials. In this paper we present recent results on the growth of highly oriented, low-stressed A1N films on diamond. SAW propagation on A1N/diamond has been theoretically investigated together with electromechanical coupling for both the Rayleigh and the Sezawa modes. The theoretical calculations show that high SAW velocities are achievable with good coupling efficiencies. Under proper conditions very large piezoelectric couplings are predicted--k2 = 2.2 and 4% for the Rayleigh and the Sezawa wave, respectively--comparable to those observed in strongly piezoelectric single crystals such as LiNbO3, but with SAW velocities approximately two-fold higher. Experiments performed on A1N/diamond/Si SAW test devices have shown good agreement between experimental results and theoretical predictions and demonstrate the feasibility of SAW devices based on this technology.     

LiNbO_3压电薄膜的研究进展

LiNbO3因其优异的压电性能和声表面波特性而被广泛应用于声表面波器件中。对LiNbO3的声表面波特性及薄膜制备技术进行了综述,并着重介绍了LiNbO3/蓝宝石及LiNbO3/金刚石多层结构的制备、声表面波特性的理论研究及压电薄膜研究进展。     

Voltage controlled SAW velocity in GaAs/LiNbO(3)-hybrids

The combination of the electronic properties of semiconductor heterojunctions and the acoustic properties of piezoelectric materials yields very promising surface acoustic wave (SAW) hybrid systems. Quasi-monolithical integration of thin GaAs/InGaAs/AlGaAs-quantum well structures on LiNbO(3) SAW devices is achieved using the epitaxial lift-off (ELO) technique. The conductivity of the two-dimensional electron system in the quantum well, which can be controlled via field effect, modifies the velocity of the SAW. Due to the high electromechanical coupling coefficient of LiNbO(3) a large phase shift can be obtained. As an example for this new class of voltage-tunable single chip SAW devices, a voltage-controlled oscillator (VCO) is presented in which the output frequency can be tuned by an applied gate voltage.     

Analysis of SAW properties of epitaxial ZnO films grown on R-Al2O3 substrates

ZnO thin films with a high piezoelectric coupling coefficient are widely used for high frequency and low loss surface acoustic wave (SAW) devices when the film is deposited on top of a high acoustic velocity substrate, such as diamond or sapphire. The performance of these devices is critically dependent on the quality of the ZnO films as well as of the interface between ZnO and the substrate. In this paper, we report the studies on piezoelectric properties of epitaxial (112¯0) ZnO thin films grown on R-plane sapphire substrates using metal organic chemical vapor deposition (MOCVD) technique. The c-axis of the ZnO film is in-plane. The ZnO/R-Al₂O₃ interface is atomically sharp. SAW delay lines, aligned parallel to the c-axis, were used to characterize the surface wave velocity, coupling coefficient, and temperature coefficient of frequency as functions of film thickness to wavelength ratio (h/λ). The acoustic wave properties of the material system were calculated using Adler's matrix method, and the devices were simulated using the quasi-static approximation based on Green's function analysis     

The effects of ZnO films on surface acoustic wave properties of modified lead titanate ceramic substrates

Poly-crystal zinc oxide (ZnO) films with c-axis (002) orientation have been successfully grown on the strontium (Sr) modified lead titanate ceramic substrates with different Sr dopants by r.f. magnetron sputtering technique. Highly oriented ZnO films with c-axis normal to the substrates can be obtained under a total pressure of 10 mTorr containing 50% argon and 50% oxygen and r.f. power of 70 W for 3 hours. Crystalline structures of the films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The phase velocity, electromechanical coupling coefficient and temperature coefficient of frequency of surface acoustic wave (SAW) devices with ZnO/IDT/PT (IDT, inter-digital transducer; PT, PbTiO3 ceramics) structure were investigated. The devices with ZnO/IDT/PT structure shows that the ZnO film effectively raise the electromechanical coupling coefficient (kappa2) from 3.8% to 9.9% of the device with the concentrations of Sr dopants of 0.15. It also improves the temperature coefficient of frequency of SAW devices.     

New method of change in temperature coefficient delay of acoustic waves in thin piezoelectric plates

As is well-known, the development of high-effective and thermostable acoustic devices assumes using the acoustic waves with high coefficient of electromechanical coupling (K2) and low temperature coefficient of delay (TCD). At present, it also is well-known that fundamental shear horizontal (SH0) acoustic waves in thin piezoelectric plates possess by significantly more electromechanical coupling compared to surface acoustic waves (SAW) in the same material. However, although the value of TCD of SH0 waves is insignificantly less than for SAW, this is not enough for development of thermostable devices. This paper suggests a new way of decreasing TCD of SH0 waves in piezoelectric plates at a high level of electromechanical coupling. This way assumes to use the structure containing the piezoelectric plate and liquid with the special dependence of permittivity on temperature. Theoretical and experimental investigation showed that, for SH0 wave in YX LiNbO3 plate at hf = 700 m/s (h = plate thickness, f = wave frequency) the presence of butyl acetate can decrease the value of TCD by six times at K2 = 30%. In a whole the obtained results open the wide prospect of using SH0 wave in thin piezoelectric plate for development of high effective and thermo-stable acoustic devices.     

Applicability of LiNbO3, langasite and GaPO4 in high temperature SAW sensors operating at radio frequencies

The applicability of LiNbO3, langasite and GaPO4 for use as crystal substrates in high temperature surface acoustic wave (SAW) sensors operating at radio frequencies was investigated. Material properties were determined by the use of SAW test devices processed with conventional lithography. On GaPO4, predominantly surface defects limit the accessible frequencies to values of 1 GHz. Langasite SAW devices could be operated up to 3 GHz; however, high acoustic losses of 20 dB/micros were observed. On LiNbO3, the acoustic losses measured up to 3.5 GHz are one order of magnitude less. Hence, SAW sensors capable of wireless interrogation were designed and processed on YZ-cut LiNbO3. The devices could be successfully operated in the industrial-scientific-medical (ISM) band from 2.40 to 2.4835 GHz up to 400 degrees C.     

High velocity SAW using aluminum nitride film on unpolished nucleation side of free-standing CVD diamond

High performances surface acoustic wave (SAW) filters based on aluminium nitride (AlN)/diamond layered structure have been fabricated. The C-axis oriented aluminum nitride films with various thicknesses were sputtered on unpolished nucleation side of free-standing polycrystalline chemical vapor deposition (CVD) diamond obtained by silicon substrate etching. Experimental results show that high order modes as well as Rayleigh waves are excited. Experimental results are in good agreement with the theoretical dispersion curves determined by software simulation with Green's function formalism. We demonstrate that high phase velocity first mode wave (so-called Sezawa wave) with high electromechanical coupling coefficient are obtained on AlN/diamond structure. This structure also has a low temperature coefficient of frequency (TCF), and preliminary results suggest that a zero TCF could be expected.     

Surface acoustic wave properties of proton-exchanged LiNbO3 waveguides with SiO2 film

Surface acoustic wave (SAW) properties of proton-exchanged (PE) z-cut lithium niobate (LiNbO3) waveguides with silicon dioxide (SiO2) film layers were investigated using octanoic acid. The distribution of hydrogen measured by secondary ion mass spectrometry (SIMS) showed a step-like profile, which was assumed to be equal to the waveguide depth (d). The SiO2 film was deposited on z-cut LiNbO3 waveguide by radio frequency (rf) magnetron sputtering. We investigated the important parameters for the design of SAW devices such as phase velocity (Vp), insertion loss (IL) and temperature coefficient of frequency (TCF) by a network analyzer using thin-film aluminum interdigital transducer electrodes on the upper SiO2 film surface. The experimental results showed that the Vp of SAW decreased slightly with the increase of h/lambda, where h was the thickness of SiO2 films and lambda was the wavelength. The IL of SAW increased with increased h/lambda. The TCF of SAW calculated from the frequency change of the output of SAW delay line showed an evident decrease with the increase of h/lambda. The TCF for PE z-cut LiNbO3 was measured to be about -54.72 ppm/degreees C at h/lambda = 0.08. It revealed that the SiO2 films could compensate and improve the temperature stability as compared with the TCF of SAW on PE samples without SiO2 film.     

Investigation on recent quartz-like materials for SAW applications

Recent progress in growing and characterizing quartz-like materials of the trigonal system class 32 has been reported by several groups. The promising perspective for bulk acoustic wave frequency control applications indicates the potentiality of employing these materials for SAW applications as well. This paper reports results of investigations focused on SAW orientations of langasite (LGS), gallium phosphate (GaPO(4)), and langanite (LGN), both singly and doubly rotated cuts. Among the characteristics explored, major attention is paid to the temperature coefficient of delay (TCD), the electromechanical coupling coefficient (K(2)), and the power flow angle (PFA). Contour graphs are plotted based on our calculated results and show the regions in space in which low TCD and high K(2 ) can be obtained; they also exhibit the associated PFA and phase velocity characteristics. The influence of different sets of material constants is addressed. The spatial investigation performed shows that there are promising orientation regions in these materials at which zero or reduced TCD (<10 ppm/ degrees C) and PFA are obtained. Additional attractive characteristics for SAW applications have been observed: values of K(2) a few times higher than the K(2) of quartz ST-X, thus finding applications in larger bandwidth devices; variation of the TCD with respect to temperature, which is comparable to the variation found for quartz ST-X and less than that for zero TCD Li (2)B(4)O(7) cuts like 45 degrees X-Z and (0 degrees 78 degrees 90 degrees ); and phase velocity values circa 13 to 26% smaller than the phase velocity of quartz ST-X thus allowing a reduction in size for intermediate frequency device applications.     

SAW COM-parameter extraction in AlN/diamond layered structures

Highly c-axis oriented aluminum nitride (AlN) thin piezoelectric films have been grown on polycrystalline diamond substrates by pulsed direct current (DC) magnetron reactive sputter-deposition. The films were deposited at a substrate temperature below 50/spl deg/C (room temperature) and had a typical full width half maximum (FWHM) value of the rocking curve of the AlN-002-peak of 2.1 degrees. A variety of one-port surface acoustic wave (SAW) resonators have been designed and fabricated on top of the AlN films. The measurements indicate that various SAW modes are excited. The SAW phase velocities of up to 11.800 m/s have been measured. These results are in agreement with calculated dispersion curves of the AlN/diamond structure. Finally, the coupling of modes parameters have been extracted from S/sub 11/ measurements using curve fitting for the first SAW mode, which indicate an effective coupling K/sup 2/ of 0.91% and a Q factor of about 600 at a frequency of 1050 MHz.     

Synthesis and surface acoustic wave properties of AlN films deposited on LiNbO3 substrates

The c-axis-oriented aluminum nitride (AlN) films were deposited on z-cut lithium niobate (LiNbO₃) substrates by reactive RF magnetron sputtering. The crystalline orientation of the AlN film determined by x-ray diffraction (XRD) was found to be dependent on the deposition conditions such as substrate temperature, N₂ concentration, and sputtering pressure. Highly c-axis-oriented AlN films to fabricate the AlN/LiNbO₃-based surface acoustic wave (SAW) devices were obtained under a sputtering pressure of 3.5 mTorr, N₂ concentration of 60%, RF power of 165 W, and substrate temperature of 400°C. A dense pebble-like surface texture of c-axis-oriented AlN film was obtained by scanning electron microscopy (SEM). The phase velocity and the electromechanical coupling coefficient (K²) of SAW were measured to be about 4200 m/s and 1.5%, respectively. The temperature coefficient of frequency (TCF) of SAW was calculated to be about -66 ppm/°C     

Combination of e-beam lithography and of high velocity AIN/diamond-layered structure for SAW filters in X band

In this work, we report on the fabrication results of surface acoustic wave (SAW) devices operating at frequencies up to 8 GHz. In previous work, we have shown that high acoustic velocities (9 to 12 km/s) are obtained from the layered AIN/diamond structure. The interdigital transducers (IDTs) made of aluminium with resolutions up to 250 nm were successfully patterned on AIN/diamond-layered structures with an adapted technological process. The uniformity and periodicity of IDTs were confirmed by field emission scanning electron microscopy and atomic force microscopy analyses. A highly oriented (002) piezoelectric aluminum nitride thin film was deposited on the nucleation side of the CVD diamond by magnetron sputtering technique. The X-ray diffraction effectuated on the AIN/diamond-layered structure exhibits high intensity peaks related to the (002) AIN and (111) diamond orientations. According to the calculated dispersion curves of velocity and the electromechanical coupling coefficient (K2), the AIN layer thickness was chosen in order to combine high velocity and high K2. Experimental data extracted from the fabricated SAW devices match with theoretical values quite well.     

Theoretical analysis of SAW propagation characteristics in (100) oriented AlN/diamond structure

In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamond, IDT/AlN/thin metal film/ diamond, and thin metal film/AlN/IDT/diamond. The effects of Cu and Al electrodes as well as the thickness of electrode on phase velocity, coupling coefficient, and reflectivity of SAWs are illustrated. Propagation characteristics of SAWs in (002) AlN/diamond-based structures are also presented for comparison. Simulation results show that to retain a large reflectivity for the design of RF filters and duplexers, the Cu IDT/(100) AlN/diamond structure possesses the highest phase velocity and largest coupling coefficient at the smallest AlN film thickness- to-wavelength ratio.     

Acoustically driven photon antibunching in nanowires

The oscillating piezoelectric field of a surface acoustic wave (SAW) is employed to transport photoexcited carriers, as well as to spatially control exciton recombination in GaAs-based nanowires (NWs) on a subns time scale. The experiments are carried out in core-shell NWs transferred to a SAW delay line on a LiNbO(3) crystal. Carriers generated in the NW by a focused laser spot are acoustically transferred to a second location, leading to the remote emission of subns light pulses synchronized with the SAW phase. The dynamics of the carrier transport, investigated using spatially and time-resolved photoluminescence, is well-reproduced by computer simulations. The high-frequency contactless manipulation of carriers by SAWs opens new perspectives for applications of NWs in opto-electronic devices operating at gigahertz frequencies. The potential of this approach is demonstrated by the realization of a high-frequency source of antibunched photons based on the acoustic transport of electrons and holes in (In,Ga)As NWs.     

Super high electromechanical coupling and zero temperature coefficient surface acoustic wave substrates in KNbO(3) single crystal

The propagation characteristics of surface acoustic waves (SAW) and piezoelectric leaky surface waves in KNbO(3) single crystal have been investigated theoretically and experimentally. The results show that the electromechanical coupling coefficient k(2) of the surface wave propagating along the X-axis of the rotated Y-cut plate is very large with k(2)=0.53. This is about 10 times as large as that of LiNbO(3) in the surface wave branch. Experimental results for wideband SAW filters show low loss and temperature stable characteristics. The bandwidth is about 20%, and insertion losses are less than 2 to 6 dB. Simulation results for a ladder type filter using Y-cut KNbO(3) indicate that a bandwidth of 40% should be possible. The KNbO(3) substrates exhibit zero temperature coefficient of frequency (TCF) around 20 degrees C in rotated Y-cut substrates.     

Numerical analysis of wave generation and propagation in a focused surface acoustic wave device for potential microfluidics applications

We develop a 3-D finite element model of a focused surface acoustic wave (F-SAW) device based on LiNbO/sub 3/to analyze the wave generation and propagation characteristics for devices operating at MHz frequencies with varying applied input voltages. We compare the F-SAW device to a conventional SAW device with similar substrate dimensions and transducer finger periodicity. SAW devices with concentrically shaped focused interdigital transducer fingers (F-IDTs) are found to excite waves with high intensity and high beam-width compression ratio, confined to a small localized area. F-SAW devices are more sensitive to amplitude variations at regions close to the focal point than conventional SAW devices having uniform IDT configuration. We compute F-SAW induced streaming forces and velocity fields by applying a successive approximation technique to the Navier-Stokes equation (Nyborg's theory). The maximum streaming force obtained at the focal point varies as the square of the applied input voltage. Computed streaming velocities at the focal point in F-SAW devices are at least an order of magnitude higher than those in conventional SAW devices. Simulated frequency response indicates higher insertion losses in F-SAW devices than in conventional devices, reflecting their greater utility as actuators than as sensors. Our simulation findings suggest that F-SAW devices can be utilized effectively for actuation in microfluidic applications involving diffusion limited transport processes.