GaAs PHEMT开关模型的研究

论述了GaAs PHEMT开关器件的建模,介绍了利用微波电路设计软件ADS建立GaAs PHEMT开关模型的方法,给出了模型模拟与器件测量的曲线和模型参数.提取开关模型是研制控制电路的关键,特别是对于MMIC电路.一种0.5μm GaAs PHEMT开关器件模型已开发成功,并集成在ADS环境中,可为各类开关、衰减器和移相器等微波控制电路提供可靠的器件模型,提高电路设计精度.     

一种高性能的VXI矩阵开关模块的研制

高性能的矩阵开关模块是测试系统实现通用性的关键.本文介绍了一种高性能的VXI矩阵开关的研制,阐述了模块的设计原理,给出了电路组成和重要器件的工作原理和控制过程,并简要分析了模块的性能.     

有源高边箝位反激开关DC/DC变换器设计

本文在分析有源箝位反激DC/DC变换器工作原理基础上开展电路设计,根据理论参数计算选择箝位器件,实现了软开关,设计相关保护电路,给出了电路在不同温度下的测试结果与电压波形。实验结果表明本文设计的变换器电路在消除吸收电路损耗同时,显著提高了开关电源的效率。     

一种新型微波射频开关(4×2)的设计与应用

介绍了一种新型利用pin diodes的4输入2输出射频开关的设计,给出了设计思想和详细的电路图,并介绍了这种射频微波器的印刷电路板的设计及其电磁兼容特性.准确分析了器件良好的散射和传榆性能.该射频开关稳定性高,微波特性良好,能够准确应用于测试系统中电路的切换.目前,该射频开关已应用于某核磁共振测试系统中,效果良好,可靠性高.     

基于UC3842的30W升压电路设计

文章首先对UC3842芯片做了简单的介绍,描述了其在电路中的主要功能。然后对DC－DC直流Boost升压电路的充电过程和放电过程进行了详细介绍。再根据Boost电路基本公式设计了电路中的核心器件——电感,并利用RC振荡电路设定了开关频率以及电路电流和电压等参数。文中设计了电路原理图,并对电路原理图进行了简单介绍。最后给出了电路的测试结果。     

用于MEMS惯性器件的低噪声读出电路设计

给出了一种用于MEMS惯性器件的低噪声读出电路设计,针对MEMS惯性器件大多采用电容量输出等特点,设计了一个低噪声运算放大器,利用该运放,设计了一种基于开关电容的电荷转移电路来将电容量转换为电压量,以便后续电路处理.采用了相关双采样(CDS)技术,较大地减少了电路和MEMS惯性器件的1/f噪声、热噪声,抑制了零漂.采用HHNEC 0.35 μmCMOS工艺制造,面积为1 mm×2 mm,与MEMS器件封装在一起,并进行了实际测试,结果表明,该读出电路基本满足要求,并具有较低的噪声.     

大功率BUCK变换器电压电流尖峰的分析及抑制措施

在大功率Buck变换器中电路工作于高频开关状态,由于实际线路的寄生参数和器件的非理想特性的影响,开关器件两端会出现过高的电压和电流尖峰,严重地降低了电路的可靠性。本文详细分析了两种尖峰产生的原因和危害,有针对性地提出了几种RCL缓冲电路,并给出了电路各参数的分析和设计方法。仿真和使用结果证明了该缓冲电路具有良好的软开关效果,对于主开关管的电压尖峰和电流尖峰具有较强的抑制作用。     

大功率BUCK 变换器电压电流尖峰的分析及抑制措施y

摘要: 在大功率Buck 变换器中电路工作于高频开关状态, 由于实际线路的寄生参数和器件的非理想特性的影响, 开关器件两端会出现过高的电压和电流尖峰, 严重地降低了电路的可靠性。本文详细分析了两种尖峰产生的原因 和危害, 有针对性地提出了几种RCL 缓冲电路, 并给出了电路各参数的分析和设计方法。仿真和使用结果证明了 该缓冲电路具有良好的软开关效果, 对于主开关管的电压尖峰和电流尖峰具有较强的抑制作用。     

基于TOP224Y复合型精密恒流源的设计

文章设计了一种由前级为精密开关恒压源电路、后级为三端浮动稳压器构成线性恒流源的复合型精密恒流源,给出了开关型恒压源与线性恒流源的设计原理与器件参数的选择.该复合型精密恒流源具有开关电源低功耗、电源输入范围宽的优良特性,也具备线性恒流源的精密性和稳定性;电路简单、体积小、纹波系数小,故在精密测量领域具有广泛的应用前景.     

具有低能耗辅助电路的并联谐振直流环节逆变器

为提高逆变器的转换效率,提出了一种具有低能耗辅助谐振电路的并联谐振直流环节逆变器.在传统硬开关逆变器的直流环节添加辅助谐振电路,使直流母线电压周期性地归零,实现逆变桥主开关器件的零电压开关,而且辅助开关器件也可以实现零电压关断和零电流开通.此外,其辅助谐振电路只有一个辅助开关器件,控制简单;辅助开关和谐振元件都位于直流母线的并联支路上,有利于降低辅助谐振电路的能耗.对其工作原理进行分析,给出不同工作模式下的等效电路图和软开关的实现条件.制作一个5kW的实验样机,通过实验结果验证该软开关逆变器的有效性.     

A novel circuit for accurate characterization and modeling of thereverse recovery of high-power high-speed rectifiers

As circuit switching frequency continues to increase, there is a need to produce faster rectifiers with lower power losses. Efficient utilization of high-power ultrafast rectifiers requires precise knowledge of the key static and dynamic switching parameters, especially the reverse-recovery characteristics. Conventional reverse-recovery test circuits were developed to test rectifiers with reverse-recovery times (t_RR) greater than 100 ns, however, new measurement techniques are needed for accurate characterization and modeling of the high-power ultrafast rectifier reverse-recovery process. A test circuit topology is proposed which offers several advantages over existing test circuits. This circuit offers the ability to characterize high-power ultrafast rectifiers at very high di/dt and also provides independent control of bias current, reverse voltage and di/dt. This circuit is also studied using a two-dimensional (2-D) mixed device and circuit simulator in which the device under test is represented as a 2-D finite-element grid and the semiconductor equations are solved under boundary conditions imposed by the proposed test circuit. This simulation tool is used to understand the device physics of the reverse-recovery process and develop more accurate models to be implemented in behavioral circuit simulators. The simulation results are then compared to the measured data for a silicon P-i-N and 200-V GaAs Schottky rectifier under various measurement conditions. Simulation results are shown to be in excellent agreement with the measured data     

Equivalent circuit models for resonant and PWM switches

The nonlinear switching mechanism in pulsewidth-modulated (PWM) and quasi-resonant converters is that of a three-terminal switching device which consists only of an active and a passive switch. An equivalent circuit model of this switching device describing the perturbations in the average terminal voltages and current is obtained. Through the use of this circuit model the analysis of pulsewidth modulated and quasiresonant converters becomes analogous to transistor circuit analysis where the transistor is replaced by its equivalent circuit model. The conversion ratio characteristics of various resonant converters and their relationship to a single function, called the quasi-resonant function, is easily obtained using the circuit model for the three-terminal switching device. The small-signal response of quasi-resonant converters to perturbations in the switching frequency and input voltage is determined by replacing the three-terminal switching device by its small-signal equivalent circuit model     

Design considerations of IGBT's in resonant converter applications

The switching dynamics of insulated gate bipolar transistors (IGBT's) in zero voltage switching (ZVS) resonant converter applications is studied and optimized using an advanced mixed device and circuit simulator. It is shown that bipolar and MOS device parameters must be carefully optimized to obtain the lowest total power loss. A simple circuit simulation model was used in an advanced behavioral circuit simulator where the model parameters were extracted from mixed device and circuit simulations. Performance analysis of a typical series resonant converter (SRC) shows that ZVS condition is more favorable than the zero current switching (ZCS) condition from the standpoint of obtaining efficient power conversion. It is shown that IGBT's with narrower source result in lower total switching power loss     

A switching lateral transistor

A switching phenomenon has been reported in certain lateral geometry transistors in silicon integrated circuits. These devices switch between conducting and nonconducting states at a critical value of VCE. A hypothesis for the mechanism has been proposed. In this paper an equivalent circuit is developed for the switching lateral transistor and is used to predict transistor behavior. The effect of manufacturing tolerances on the device switching voltage is investigated and a technique of production control is proposed. Circuits using the device are described in which the circuit switching voltage may be varied over a wide range. Some applications of the switching lateral transistor, as an overvoltage protection circuit and a relaxation oscillator, are described.     

Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour

High-voltage power MOSFETs have been widely used in switching mode power supply circuits as output drivers for industrial and automotive electronic control systems. However, as the device size is reduced, the energy handling capability is becoming a very important issue to be addressed together with the trade-off between the series on-resistance R_ON and breakdown voltage V_BR. Unclamped inductive switching (UIS) condition represents the circuit switching operation for evaluating the “ruggedness”, which characterizes the device capability to handle high avalanche currents during the applied stress. In this paper we present an experimental method which modifies the standard UIS test and allows extraction of the maximum device temperature after the applied standard stress pulse vanishes. Corresponding analysis and non-destructive prediction of the ruggedness of power DMOSFETs devices supported by advanced 2-D mixed mode electro-thermal device and circuit simulation under UIS conditions using calibrated physical models is provided also. The results of numerical simulation are in a very good correlation with experimental characteristics and contribute to their physical interpretation by identification of the mechanism of heat generation and heat source location and continuous temperature extraction.     

System simulation and realization of a resonant inverter with afield-controlled thyristor

The design, simulation, and realization of a single-ended quasi-resonant inverter (SEQRI) for induction heating applications are described. A novel power device, the field-controller thyristor (FCT), is used as a switching device. Full understanding and a proper realization of the circuit is obtained by accurate simulation with a software tool combining circuit and two-dimensional device simulation. With the use of combined circuit/device simulation, the operation of the system is predicted accurately. Comparison with experimental data showed excellent agreement. It is verified that a 15 A/1700 V FCT is an appropriate switching device for a SEQRI fed from a 220 V mains and delivering an output power of 1 kW     

一种新型ZVT—PWM软开关BOOST变换器

介绍一种带缓冲电路的新型零电压过渡PWM（ZVT－PWM）软件开关BOOST变换器,缓冲电路的加入,使主,辅助开关都能实现软化,减小了开关管的电压和电流应力,提高了整机效率,对电路的工作原理进行了详细分析,推导出了工作过程中各阶段的状态具体表达式,最后进行了仿真分析,并在此基础上进行实验验证,给出实验结果,实验证明,该电路结构简单,效率较高,具有一定的实用价值。     

基于形状工程的可靠磁性逻辑器件和触发器实现

纳米级磁性逻辑器件是一种新兴的场耦合计算范例,可用于实现非易失性和极低功耗的磁性逻辑电路.然而,杂散磁场和温度波动热效应阻碍了器件和电路的可靠转换.该文研究了对称缺失等腰三角形特殊形状纳磁体的转换特性,提出了利用这种特殊形状纳磁体实现磁性逻辑器件可靠转换的方法.基于特殊形状纳磁体器件设计了流水线RS触发器时序电路,并采用OOMMF软件进行了性能模拟.结果表明,特殊形状纳磁体实现的基本触发器电路不但能够进行可靠的流水线计算,同时还具有较高的工作温度和良好的按比例缩小特征.     

一种用于开关电源启动电路的新型自偏置高压器件结构

设计了一种新的用于离线式集成开关电源启动电路的自偏置高压器件结构.对一个RESURF高压(功率)器件的此种自偏置方法进行了原理分析和仿真模拟.采用该结构集成开关电源的启动电路可以节省芯片面积,降低电路功耗,易于控制且可提供较大的芯片内部电源电压.     

Resonant link bidirectional power converter. I. Resonant circuit

This paper proposes a novel resonant circuit capable of PWM operation with zero switching losses. The resonant circuit is aimed at providing zero voltage intervals in the DC link of the PWM converter during the required converter device switching periods, and it gives minimum DC bus voltage stresses and minimum peak resonant current. It requires only two additional switches compared to a conventional PWM converter. It is observed that the resonant circuit guarantees the soft switching of all the switching power devices of converters including the switches for resonant operation. Simulation results and experimental results are presented to verify the operating principles