单晶铌酸锂薄膜光波导的制备研究

为了优化单晶铌酸锂薄膜光波导的性能,研究了基于单晶铌酸锂薄膜材料的光波导刻蚀工艺.虽然Ar+物理刻蚀能够达到最高95 nm/min的刻蚀速率,但难以获得光滑的波导侧壁,且以Cr作为掩膜的刻蚀选择比为1∶1,这意味着较差的选择性使其难以实现铌酸锂的深刻蚀.而采用反应离子刻蚀(RIE)得到的刻蚀速率较低,但是以Cr作为掩膜...     

PMMA的反应离子深刻蚀

对PMMA进行反应离子深刻蚀以获得高深度比微结构.研究了纯氧刻蚀气体中加入CHF3对刻蚀速率、图形形貌等的影响.纯氧刻蚀PMMA,钻蚀现象严重.加入CHF3后,刻蚀速率随CHF3含量增加而下降.加入适量CHF3,可以在侧壁形成钝化层,保护侧壁不受钻蚀.当CHF3含量为40%,刻蚀功率30 W,工作气压为4 Pa时,即使刻蚀深度达到400 μm,侧壁仍然陡直,刻蚀深宽比大于10.     

MEMS压印模板制作的刻蚀机理及尺寸控制方法

为了提高基于湿法刻蚀压印模板制作工艺中刻蚀图形尺寸的控制精度,研究了玻璃湿法刻蚀的反应动力学过程,得到刻蚀剂中（HF）2为决定反应速率的主要活性成分的结论;结合实验建立了合理的刻蚀速率模型．采用不同氢氟酸浓度的刻蚀液进行了实验,实测刻蚀速率与理论计算数值的对比结果表明模型预测精度达到96％以上．基于该模型刻蚀深度确定刻蚀时间进行了压印模板制作的实验,制作了图形特征尺寸为15μm、刻蚀深度为8μm的压印模板．对模板图形的测量结果表明,通过该模型预测的尺寸误差仅为0．05μm．     

薄膜体声波滤波器AlN压电薄膜的ICP刻蚀研究北大核心CSCD

随着5G通信技术的发展,通信频段不断提高,以氮化铝(AlN)为压电薄膜材料的薄膜体声波滤波器作为目前唯一可集成的射频前段滤波器成为研究热点之一。本文开展AlN材料刻蚀工艺的实验研究,实验中采用光刻胶作为刻蚀掩膜,Cl2/BCl3作为刻蚀工艺气体,通过一系列工艺影响参数调整及相应刻蚀结果分析,获得了ICP源功率、RF偏压功率、腔体压强和BCl3气体流量对AlN材料和光刻胶掩膜刻蚀速率、刻蚀形貌的影响规律。通过综合优化工艺参数,最终得到了侧壁平坦、表面光滑的空气隙型薄膜体声波滤波器三明治结构。     

MEMS中硅湿法深槽刻蚀工艺的研究

针对硅基MEMS湿法深槽刻蚀技术的难点,在硅材料各向异性腐蚀特性的基础上探索了湿法工艺。对腐蚀液含量、温度、添加剂含量对刻蚀速率及表面粗糙度的影响,掩膜技术等进行了实验研究,优化得到了最佳刻蚀条件。应用该技术成功地刻蚀出深度高达330μm的深槽,为MEMS元器件的加工提供了一种参考方法。     

ZnS衬底上二维亚波长结构抗反射表面的制备及性能研究

采用接触式紫外光刻和反应离子刻蚀工艺在ZnS衬底上制备二维亚波长结构抗反射表面。在优化的光刻工艺下,以CH4、H2及Ar的混合气体为刻蚀剂,研究了刻蚀工艺对刻蚀速率和刻蚀形貌的影响。结果表明,刻蚀速率随着射频功率的增大线性增大,随着工作压强的增加先增大后减小,随着CH4含量的增大先增大后降低。功率过大会导致刻蚀产物发生二次沉积,CH4流量过高会导致聚合物的生成加剧,这些都会影响刻蚀形貌。最后在优化的刻蚀工艺下制备出了8～12μm波段具有较好的宽波段增透效果的二维亚波长结构。     

集成工艺中湿法刻蚀对锆钛酸铅性能的影响(英文)

通过将溶胶凝胶法制备的锆钛酸铅(PZT)在非晶态和多晶态进行刻蚀,对比未经刻蚀的PZT性能,研究了集成工艺中湿法刻蚀造成极化和耐久性能退化的机理.PZT的结晶图谱和表面形貌分析发现,湿法刻蚀中产生的非铁电成分由于具有较小的介电常数,降低了铁电材料上分担的有效测试电压,导致刻蚀后PZT极化能力的降低.未刻蚀的PZT翻转1011次后极化值损失约3%,而刻蚀后极化值减小量大于5%.随着尺寸的减小,耐久特性的降低更为明显,100μm×100μm的PZT极化值减小量约为500μm×500μm样品的3倍.高温过程中由于湿法刻蚀而产生的缺陷和空隙在PZT内部重新分布,外加电压下有更多的电子被缺陷和空隙束缚而产生内建电场并钉扎铁电畴,不同器件尺寸的PZT内部缺陷和空隙浓度的变化不同,导致耐久特性随PZT器件尺寸而不同.利用压电特性参数与极化强度的关系,可以解释湿法刻蚀对压电特性造成损伤的原因.     

Pyrex玻璃的湿法深刻蚀及表面布线工艺

高表面质量的pyrex玻璃对提高MEMS器件尤其是光学器件性能至关重要。本文采用TiW／Au＋AZ4620厚胶作为多层复合刻蚀掩模,重点研究了玻璃湿法深刻蚀工艺中提高表面质量的方法,并分析了钻蚀和表面粗糙度产生的机理。结果表明,采用TiW／Au＋AZ4620厚胶的多层掩膜比TiW／Au掩膜能更有效地避免被保护玻璃表面产生针孔缺陷,减轻钻蚀。在纯HF中添加HCl,可以得到更光洁的刻蚀表面,当HF与HCl体积配比为10：1时,玻璃刻蚀面粗糙度由14．1nm减小为2．3nm。利用该工艺,成功实现了pyrex7740玻璃的150μm深刻蚀,保护区域的光学表面未出现钻蚀针孔等缺陷,同时完成了金属引线和对准标记的制作,为基于玻璃材料的MEMS器件制作提供了一种新的加工方法。     

石英和BK7玻璃的离子束刻蚀特性研究

石英和BK7玻璃是常用的光学材料和微系统材料.用Ar作为工作气体对石英和BK7玻璃及其掩模材料AZ1350的离子束刻蚀特性进行了研究,分析了离子能量、离子束流密度和离子束入射角等几种因素对刻蚀速率和选择比的影响,结合相关理论得到了相应的刻蚀速率拟合方程.AFM测量结果表明刻蚀工艺对材料的低损伤.由于与光刻胶的刻蚀选择比较低,随着石英和BK7玻璃刻蚀深度的增加,图形转移精度下降.因此提高刻蚀选择比是获得高分辨率图形的前提.     

微秒脉冲激光诱导硅表面微结构的研究

分别在空气和SF6环境下,使用波长为1064 nm的半导体微秒脉冲激光器扫描辐照单晶Si制备出微米量级的硅表面微结构,并利用扫描电子显微镜和可见—近红外分光光度计观测激光辐照后的硅表面形貌和光学特性。结果表明,当硅表面每激光光斑面积累积辐照的微秒脉冲数达到1600个,即可在硅表面形成平均高度为30μm、数密度约为3.0×105spike/cm2的锥形微结构;硅表面在SF6气氛中形成的微结构表面光滑,纵横比为2,而空气中的微结构表面粗糙,纵横比为1,表明SF6气氛更有利于锥形微结构形成;微秒激光辐射后的硅在0.2~2.5μm波段内反射率大幅下降,空气中制备的微结构硅平均反射率10%,SF6中制备的低至2.8%;还探讨了硅表面形貌的演化过程,认为激光辅助化学刻蚀和再沉积机制对于微秒激光诱导硅表面微结构的生长起着重要作用。     

An analytical solution for mechanical etching of glass by powder blasting

Masked erosion of glass by powder blasting is studied and a nonlinear partial differential equation of first order describing the displacement of the glass surface is proposed. This equation is solved by means of the characteristic-strip equations. If so-called transition regions are introduced near the edges of the mask, an analytical solution can be obtained which is in reasonable agreement with measurements.     

Fracture strength of soda-lime glass after etching

The strength of soda-lime glass at liquid nitrogen temperature after various amounts of etching was measured. A median crack length of 6 μm was calculated from the results and a model of the etching process. It was found that the rate of etching at the crack tip was much lower than on the external surface. Measured distributions of strength for samples etched different depths were also in reasonable agreement with calculated distributions. The etching process itself was found to cause some weakening of the glass.     

Pr_(6)O_(11)对合成金刚石单晶各向异性的刻蚀EI北大核心CSCD

为了探究稀土氧化物对合成金刚石单晶的各向异性刻蚀,在氮气保护下,在750~950℃内用Pr_(6)O_(11)对合成金刚石单晶进行刻蚀。采用扫描电子显微分析、热重分析、X射线衍射和拉曼光谱等技术对刻蚀后金刚石单晶不同晶面的表面形貌、物相组成和刻蚀机理进行表征与分析。采用最大刻蚀深度、单颗粒抗压强度和冲击韧性来表征刻蚀前后金刚石性能的变化。结果表明:Pr_(6)O_(11)对金刚石{100}面和{111}面的刻蚀程度和形貌均不同;当温度为750℃时,Pr_(6)O_(11)对金刚石单晶已有一定程度的刻蚀,随刻蚀温度的增加,刻蚀加剧,且金刚石{111}面的刻蚀程度比{100}面严重;{111}面刻蚀坑形貌从三角形变为层状结构三角形,{100}面由轻微的四边形变为类蜂窝状刻蚀坑;{111}面最大刻蚀深度从1.12μm增加到12.54μm,而{100}面只从0.30μm增加到2.11μm;金刚石单颗粒的抗压强度由未刻蚀金刚石的576.25 N降低到最小530.06 N,冲击韧性由92.94 J/cm^(2)减小到88.53 J/cm^(2);Pr_(6)O_(11)对金刚石单晶的刻蚀机理在885℃前为催化石墨化,885℃后为催化石墨化和氧化。     

田口方法下钢化玻璃的冲蚀性能及损伤形貌

根据内蒙古沙尘暴分布特点,采用田口正交方法,利用模拟风沙环境侵蚀实验系统,分析可控因素(冲蚀角度、冲蚀速度和沙流量)在冲蚀试验中的稳定性以及对钢化玻璃的冲蚀磨损性能的影响,并采用扫描电子显微镜(SEM)和激光共聚焦显微镜(LSCM)对冲蚀形貌进行分析。结果表明:冲蚀角度和冲蚀速度越大,信噪比越大,在冲蚀试验中数据越稳定,沙流量则相反;冲蚀角度对冲蚀率的贡献最大,其次是冲蚀速度,沙流量的贡献最小。低角度时,钢化玻璃的质量损失主要由切削作用引起,SEM图中可见明显的犁沟;而高角度时,钢化玻璃的质量损失则由裂纹叠加引起,SEM图中显示为脆性断裂凹坑。随着冲蚀角度的增大,钢化玻璃表面损伤区域的深度和宽度相应增加;损伤区域形状由长条形趋向于圆锥形。     

Microstructural characterisation of metallurgical grade porous silicon nanosponge particles

Porous silicon finds numerous applications in the areas of bio-technology, drug delivery, energetic materials and catalysis. Recent studies by Vesta Sciences have led to the development of porous silicon nanosponge particles from metallurgical grade silicon powder through their own patented chemical etching process (Irish patent no. IE20060360). This discovery paves the way for a more economical production method for porous silicon. The study presented here studies the structural morphology of the porous silicon nanosponge particles using high resolution electron microscopy techniques combined with porisometry type measurements, where appropriate. The related surface pore structure is examined in detail using Scanning Electron Microscopy and Transmission Electron Microscopy techniques while the internal pore structure is explored using Focused Ion Beam milling and ultramicrotomed cross-sections. Three samples of the silicon particles were analysed for this study which include the starting metallurgical grade silicon powder and two samples that have been chemically etched. Analysis of the etched samples indicates a disordered pore structure with pore diameters ranging up to 15 nm on porous silicon particles ranging up to 5 μm in size. Crystallographic orientation did not appear to affect the surface pore opening diameter. Internal pore data indicated pore depths of up to 1 μm dependant on the particle size and etching conditions applied.     

碳化硅颗粒增强复合材料超疏水表面的制备

采用电化学蚀刻方法在碳化硅颗粒增强复合材料(SiC/Al)表面构筑了微纳结构, 重点分析了蚀刻电流密度和蚀刻时间等关键操作参数对所得表面微观形貌及润湿特性的影响。研究发现, 较高电流密度(6 A/dm²)下刻蚀的SiC/Al复合材料表面可形成由微米级“粒状”结构和纳米级结构(颗粒状和波鳞状)复合而成的微-纳双层结构, 且这种特殊结构不因后续刻蚀时间延长而改变; 优化条件形成的SiC/Al复合材料刻蚀表面呈现出静态接触角高达160.7°、滚动角低至4°的超疏水特性。本研究结果说明SiC/Al复合材料可用于制备自清洁表面。     

Influence of incident ion beam angle on dry etching of silica sub-micron particles deposited on Si substrates

Large surface area nanopatterning using colloidal lithography (CL) processed by dry-etching was investigated by comparing the effect of the etching angle on the subsequent nanostructured sample. The particles, produced from an alkoxide precursor by sol-gel process, were spherical with a size about 300 nm. They were self-assembled in closed-packed 2D crystal monolayers by means of the Langmuir-Blodgett (LB) technique, which controls the surface compactness of the colloidal crystals as well as the number of the particle layers deposited on the substrate. Afterwards, the structure was transferred on silicon wafers by CL: further nanostructuring of monolayer films was made by etching with Ar⁺ ion beam at 550 eV, 7 · 10^− 2 Pa and room temperature over areas of about 4 cm² of the particle film. The incident beam angle was fixed at 0° and 45° with respect to the normal of the substrate in order to change the morphology of the etched 2D crystal. The shape of the sub-micron particles was altered and the particle size was reduced but the original close-packed structure was conserved. The etching process affected both the particles and the interstitial uncovered substrate. The substrate etching was more pronounced for long time and high etching angle: this resulted from a higher physical sputtering yield at higher angle. Moreover the oblique incidence of ion beam introduced anisotropy to the sample. The particle shadowing effect accentuated the nanostructuring of the substrate at 45°.     

温度对铁基预合金粉腐蚀泡沫化人造金刚石微粉的影响

采用铁基预合金粉对粒径为40~50μm的人造金刚石微粉进行腐蚀泡沫化处理。研究了不同温度对金刚石微粉表面形貌、颗粒直径、比表面积和孔容积的影响,并对腐蚀图案的各向异性和泡沫化机理进行分析。结果表明:当金刚石和预合金粉质量比为1∶2时,800℃处理的金刚石表面出现明显的腐蚀坑。随着处理温度升高,金刚石泡沫化程度先增大后减小,当处理温度为1 000℃时,金刚石泡沫化效果最好;此时,金刚石的比表面积和孔容积最大,分别为7.322m2/g和0.012mL/g。在腐蚀泡沫化过程中,金刚石发生了石墨化。