Electric-field and temperature effects on electric currents in polycrystalline ZnGa<Subscript>2</Subscript>Se<Subscript>4</Subscript>

The current (electrical transport) through In/ZnGa₂Se₄/In structures has been measured as a function of temperature and applied electric field at temperatures from 77 to 400 K in fields from 10 to 3 × 10⁴ V/cm. The results are analyzed in terms of the Poole-Frenkel effect and space-charge-limited currents. The activation energy of traps and trap concentration in ZnGa₂Se₄ and its refractive index are determined to be E _t= 0.8 eV, N _t = 4 × 10¹³ cm^?3, and n = 2.4, respectively.     

Very high thermal stability with excellent dielectric,and non-ohmics properties of Mg-doped CaCu<Subscript>3</Subscript>Ti<Subscript>4.2</Subscript>O<Subscript>12</Subscript> ceramics

In this work, the nominal CaCu_3?xMg_xTi_4.2O₁₂ (0.00, 0.05 and 0.10) ceramics were prepared by sintering pellets of their precursor powders obtained by a polymer pyrolysis solution method at 1100 °C for different sintering time of 8 and 12 h. Very low loss tangent (tanδ)?<?0.009–0.014 and giant dielectric constant (ε′) ～?1.1?×?10⁴–1.8?×?10⁴ with excellent temperature coefficient (Δε′) less than ±?15% in a temperature range of ??60 to 210 °C were achieved. These excellent performances suggested a potent application of the ceramics for high temperature X8R and X9R capacitors. It was found that tanδ values decreased with increasing Mg²⁺ dopants due to the increase of grain boundary resistance (R_gb) caused by the very high density of grain, resulting from the substitution of small ionic radius Mg²⁺ dopants in the structure. In addition, CaCu_3?xMg_xTi_4.2O₁₂ ceramics displayed non-linear characteristics with the significant enhancements of a non-linear coefficient (α) and a breakdown field (E_b) due to Mg²⁺doping. The high values of ε′ (14012), α (13.64) and E_b (5977.02 V/cm) with very low tanδ value (0.009) were obtained in a CaCu_2.90Mg_0.10Ti_4.2O₁₂ ceramic sintered at 1100 °C for 8 h.     

Effect of manganese doping on conduction in olivine LiFePO<Subscript>4</Subscript>

Lithium ion batteries play a crucial role in terms of good rechargeability, long cycles and higher shelf life. For the fabrication of such a Li ion battery, properties of cathode material can be engineered keeping anode and electrolyte fixed. In the present work, lithium iron phosphate (LiFePO₄) has been utilized as cathode material and the properties of LiFePO₄ have been tuned by doping manganese (Mn). LiFePO₄ and different concentrations of Mn doped LiFePO₄ were prepared by solid state route. X-Ray diffraction and Raman studies were performed to confirm the formation of LiFePO₄ and Mn doped LiFePO₄ in olivine structure. Cyclic voltammetry studies revealed maximum peak oxidation current (2.96 mA) and largest surface coverage (0.066 nanoMoles/cm²) for the LiFePO₄ doped with 15% Mn (LiMn_0.15Fe_0.85PO₄). AC-conductivity study was carried out for different frequencies at room temperature. The conductivity parameters estimated using Almond and West formalism support the cyclic voltammetry results. Ion-hopping rate (ω _p ) and charge carrier concentration (K) maximize for 15% Mn doping (ω _p : 582974.48719 Hz; K: 2.62447?×?10^?6) and drop on either increasing (ω _p : 167134.73521 Hz; K: 1.25647?×?10^?7) or decreasing (ω _p : 130726.49084 Hz; K: 2.52435?×?10^?6) the Mn doping. The increase till 15% Mn doping has been attributed to the increase in unit cell volume with Mn doping while the sudden decrease at 20% Mn doping is due to dominance of back-hopping mechanism. The results clearly indicate that 15% Mn doped LiFePO₄ is the most appropriate for the realization of a cathode for Li-ion battery.     

Crystal structure,microstructure and microwave dielectric properties of novel MgAl<Subscript>2</Subscript>Ti<Subscript>3</Subscript>O<Subscript>10</Subscript> ceramic

In the present work, a novel MgAl₂Ti₃O₁₀ ceramic was obtained using a traditional solid-state reaction method. X-ray diffraction and energy dispersive spectrometer showed that the main MgAl₂Ti₃O₁₀ phase was formed after sintered at 1300–1450 °C. With rising the sintering temperature from 1300 to 1450 °C, the bulk density (ρ), relative permittivity (ε _r ) and Q?×?f value firstly increased, reached the maximum values (3.61 g/cm³, 14.9, and 26,450 GHz) and then decreased. The temperature coefficient of resonator frequency (τ _f ) showed a slight change at a negative range of ??94.6 to ??83.7 ppm/°C. When the sintering temperature was 1400 °C, MgAl₂Ti₃O₁₀ ceramics exhibited the best microwave dielectric properties with Q?×?f?=?26,450 GHz, ε _r ?=?14.9 and τ _f ?=???83.7 ppm/°C.     

Inducement of Itinerant Electron Transport in Charge-Ordered Pr<Subscript>0.6</Subscript>Ca<Subscript>0.4</Subscript>MnO<Subscript>3</Subscript> by Ba Doping

The effects of Ba ²⁺ doping on the electrical and magnetic properties of charge-ordered Pr_0.6Ca_0.4MnO₃ were investigated through electrical resistivity and AC susceptibility measurements. X-ray diffraction data analysis showed an increase in unit cell volume with increasing Ba ²⁺ content indicating the possibility of substituting Ba ²⁺ for the Ca-site. Electrical resistivity measurements showed insulating behavior and a resistivity anomaly at around 220 K. This anomaly is attributed to the existence of charge ordering transition temperature, \(T^{\mathrm {R}}_{\text {CO}}\) for the x = 0 sample. The Ba-substituted samples exhibited metallic to insulator transition (MI) behavior, with transition temperature, T _MI, increasing from ～98 K (x = 0.1) to ～122 K (x = 0.3). AC susceptibility measurements showed ferromagnetic to paramagnetic (FM-PM) transition for Ba-substituted samples with FM-PM transition temperature, T _c, increasing from ～121 K (x = 0.1) to ～170 K (x = 0.3), while for x = 0, an antiferromagnetic to paramagnetic transition behavior with transition temperature, T _N, ～170 K was observed. In addition, inverse susceptibility versus T plot showed a deviation from the Curie–Weiss behavior above T _c, indicating the existence of the Griffiths phase with deviation temperature, T _G, increasing from 160 K (x = 0.1) to 206 K (x = 0.3). Magnetoresistance, MR, behavior indicates intrinsic MR mechanism for x = 0.1 which changed to extrinsic MR for x > 0.2 as a result of Ba substitution. The weakening of charge ordering and inducement of ferromagnetic metallic (FMM) state as well as increase in both T _c and T _MI are suggested to be related to the increase of tolerance factor, τ, and increase of e _g ?electron bandwidth as average ionic radius at A-site, <r _A> increased with Ba substitution. The substitution may have reduced MnO₆ octahedral distortion and changed the Mn–O–Mn angle which, in turn, promotes itinerancy of charge carrier and enhanced double exchange mechanism. On the other hand, increase in A-site disorder, which is indicated by the increase in σ ² is suggested to be responsible for the widening of the difference between T _c and T _MI.     

Photosensitivity of thin-film structures based on CuIn<Subscript>3</Subscript>Se<Subscript>5</Subscript> and CuIn<Subscript>5</Subscript>Se<Subscript>8</Subscript> ternary semiconductor compounds

Polycrystalline n-type CuIn₃Se₅ and CuIn₅Se₈ films with thicknesses from 0.4 to 1 μm have been grown by pulsed laser ablation of bulk p-CuIn₃Se₅ and n-CuIn₅Se₈ crystals in vacuum. The temperature dependences of the resistivities of these crystals are determined by deep donor levels with energies E _D ? 0.2–0.3 eV. Photosensitive thin-film structures based on these films have been created for the first time and their photosensitivity spectra have been measured. The possibility of using thin CuIn₃Se₅ and CuIn₅Se₈ films in broadband photoconverters is demonstrated.     

Optically addressed As<Subscript>50</Subscript>Se<Subscript>50</Subscript>-liquid crystal structure highly sensitive to He-Ne laser radiation

An optically addressed structure of the As _x Se_1-x -liquid crystal (LC) type, with the photoconductor composition deviating from stoichiometry toward excess arsenic, has been tested using holographic techniques. It is established that the As₅₀Se₅₀-LC structure (with maximum possible arsenic content in the photoconductor) exhibits record high sensitivity (2.2 × 10^?7 W/cm²) at a He-Ne laser radiation wavelength. Based on this structure, it is possible to implement nonlinear optical data-processing algorithms employing the entire transmission characteristic including the inversion region. The maximum diffraction efficiency achieved with the As₅₀Se₅₀-LC structure amounts to 36.5%.     

Strong up-conversion luminescence and electrical properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> multifunctional ceramics by Er<Superscript>3+</Superscript> doping

Novel green-emitting piezoelectric ceramics of SrBi_4?x Er _x Ti₄O₁₅ (SBT-xEr) were prepared. Strong up-conversion with bright green (524 and 548 nm) and a relatively weak red (660 nm) emission bands were obtained under 980 nm excitation at room temperature, which is attributed to the intra 4f–4f electronic transition of (²H_11/2, ⁴S_3/2)–⁴I_15/2 and the transition from ⁴F_9/2 to ⁴I_15/2 of Er³⁺ ions, respectively. Simultaneously, Er³⁺ doping promotes the electrical properties. At 0.8 mol%Er, the optimal electric properties with high Curie temperature of T _c?~527?°C, large remanent polarization of 2P _r?~14.92 μC/cm² and piezoelectric constant of d ₃₃?~17 pC/N was achieved. As a multifunctional material, Er³⁺ doped SBT showed a great potential to be used in 3D-display, bio-imaging, solid state laser and optical temperature sensor.     

Electrical,Thermal and Spectroscopic Characterization of Bulk Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> Topological Insulator

We report the electrical (angular magneto-resistance and Hall), thermal (heat capacity) and spectroscopic (Raman, X-ray photoelectron, angle-resolved photoelectron) characterization of a bulk Bi₂Se₃ topological insulator, which was grown by self-flux method through solid-state reaction from high-temperature (950^°C) melt and slow cooling (2^°C/h) of constituent elements. Bi₂Se₃ exhibited metallic behaviour down to 5 K. Magneto-transport measurements revealed linear up to 400 and 30% magneto-resistance (MR) at 5 K under a 14-T field in perpendicular and parallel field directions, respectively. We noticed that the MR of Bi₂Se₃ is very sensitive to the angle of the applied field. The MR is maximum when the field is normal to the sample surface, while it is minimum when the field is parallel. The Hall coefficient (R _H) is seen nearly invariant with a negative carrier sign down to 5 K albeit having near-periodic oscillations above 100 K. The heat capacity (C _p) versus temperature plot is seen without any phase transitions down to 5 K and is well fitted (C _p = γ T + β T ³) at low temperature with a calculated Debye temperature (?? _D) value of 105.5 K. Clear Raman peaks are seen at 72, 131 and 177 cm^?1 corresponding to A\(_{\mathrm {1g}}^{1}\), E\(_{\mathrm {g}}^{2}\) and A\(_{1\mathrm {g}}^{2}\), respectively. Though two distinct asymmetric characteristic peak shapes are seen for Bi 4f_7/2 and Bi 4f_5/2, the Se 3d region is found to be broad, displaying the overlapping of spin-orbit components of the same. Angle-resolved photoemission spectroscopy (ARPES) data of Bi₂Se₃ revealed distinctly the bulk conduction bands (BCB), surface state (SS), Dirac point (DP) and bulk valence bands (BVB), and 3D bulk conduction signatures are clearly seen. Summarily, a host of physical properties for the as-grown Bi₂Se₃ crystal are reported here.     

Electrical conductivity of Cs<Subscript>3</Subscript>PO<Subscript>4</Subscript> doped with trivalent cations

Cs_{3 ? 3x} M _x PO₄ (M = Sc, Y, La, Sm, Nd) solid electrolytes have been synthesized, their phase composition has been determined, and their electrical conductivity has been measured as a function of temperature. In all of the systems, we have identified cesium orthophosphate based solid solutions. Above ～550°C, the solid solutions are isostructural with the high-temperature, cubic phase of Cs₃PO₄. They offer high cesium ion conductivity owing to the formation of cesium vacancies via 3Cs⁺ → M³⁺ substitutions and the decrease in phase transition temperature. The conductivity of the synthesized solid solutions, (4.8?5.6) × 10^?3 S/cm at 300°C and (1.6?1.9) × 10^?1 S/cm at 800°C, is at the level of earlier studied Cs_{3 ? 2x} M _x ^II PO₄ solid electrolytes.     

Effect of Ni<Superscript>2+</Superscript> substitution on crystal structure and microwave dielectric properties for MgZrNb<Subscript>2</Subscript>O<Subscript>8</Subscript> ceramics

Monoclinic structured Mg_1?xNi_xZrNb₂O₈ (0?≤?x?≤?0.12) ceramics were synthesized for the first time through traditional solid-state reaction process and pure phase were obtained in all range. Rietveld refinement was used to analyze the crystal structure. With the increase of Ni²⁺ substitution amount, ε _r decreased, Q?×?f rose first then fell, τ _f shifted for the positive direction. Bond ionicity, lattice energy and bond energy were separately calculated to investigate the correlations with microwave dielectric properties. Typically, ceramics samples with the composition of Mg_0.92Ni_0.08ZrNb₂O₈ sintered at 1280 °C for 4 h exhibited the optimum microwave dielectric properties: ε _r ?=?24.58, Q?×?f?=?74534.1 GHz, τ _f ?=???49.11 ppm/°C, which could be a promising material for application.     

Crystal structure of [CH<Subscript>3</Subscript>NH<Subscript>3</Subscript>][(UO<Subscript>2</Subscript>)(H<Subscript>2</Subscript>AsO<Subscript>4</Subscript>)<Subscript>3</Subscript>]

The crystal structure of a previously unknown compound [CH₃NH₃][(UO₂)(H₂AsO₄)₃] was solved by direct methods and refined to R ₁ = 0.038 for 3041 reflections with |F _hkl | >-4σ |F _hkl |. The compound crystallizes in the monoclinic system, space group P2₁/c, a = 8.980(1), b = 21.767(2), c = 7.867(1) Å, β = 115.919(5)°, V = 1383.1(3) ų, Z = 4. In the structure of the compound, pentagonal bipyramids of uranyl ions, sharing bridging atoms with tetrahedral [H₂AsO₄]^? anions, form strongly corrugated layered complexes [(UO₂)(H₂AsO₄)₃]^? arranged parallel to the (100) plane. The protonated methylamine molecules [CH₃NH₃]⁺ form unidimensional tapelike packings parallel to the c axis and linked by hydrophilic-hydro-phobic interactions. The topology of the layered uranyl arsenate complex [(UO₂)(H₂AsO₄)₃]^? is unusual for uranyl compounds and was not observed previously. A specific feature of this topology is the presence of monodentate arsenate “branches” arranged within the layer.     

Effect of sintering temperature on microstructures and microwave dielectric properties of Ba<Subscript>2</Subscript>MgWO<Subscript>6</Subscript> ceramics

The microwave dielectric properties of Ba₂MgWO₆ ceramics were investigated with a view to the use of such ceramics in mobile communication. Ba₂MgWO₆ ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (? _r ) of 16.8–18.2 and unloaded quality factor (Q _u  × f) of 7000–118,200 GHz were obtained at sintering temperatures in the range 1450–1650 °C for 2 h. A maximum apparent density of 6.76 g/cm³ was obtained for Ba₂MgWO₆ ceramic, sintered at 1650 °C for 2 h. A dielectric constant (? _r ) of 18.4, an unloaded quality factor (Q _u  × f) of 118,200 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?34 ppm/°C were obtained when Ba₂MgWO₆ ceramics were sintered at 1650 °C for 2 h.     

High-performance enhancement-mode thin-film transistors based on Mg-doped In<Subscript>2</Subscript>O<Subscript>3</Subscript> nanofiber networks

Although In₂O₃ nanofibers (NFs) are well-known candidates as active materials for next-generation, low-cost electronics, these NF based devices still suffer from high leakage current, insufficient on–off current ratios (I_on/I_off), and large, negative threshold voltages (V_TH), leading to poor device performance, parasitic energy consumption, and rather complicated circuit design. Here, instead of the conventional surface modification of In₂O₃ NFs, we present a one-step electrospinning process (i.e., without hot-press) to obtain controllable Mg-doped In₂O₃ NF networks to achieve high-performance enhancement-mode thin-film transistors (TFTs). By simply adjusting the Mg doping concentration, the device performance can be manipulated precisely. For the optimal doping concentration of 2 mol%, the devices exhibit a small V_TH (3.2 V), high saturation current (1.1 × 10^–4 A), large on/off current ratio (>10⁸), and respectable peak carrier mobility (2.04 cm²/(V·s)), corresponding to one of the best device performances among all 1D metal-oxide NFs based devices reported so far. When high-κ HfO _x thin films are employed as the gate dielectric, their electron mobility and V_TH can be further improved to 5.30 cm²/(V·s) and 0.9 V, respectively, which demonstrates the promising prospect of these Mg-doped In₂O₃ NF networks for highperformance, large-scale, and low-power electronics.

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High-temperature crystal chemistry of Na<Subscript>6</Subscript>(UO<Subscript>2</Subscript>)<Subscript>2</Subscript>O(MoO<Subscript>4</Subscript>)<Subscript>4</Subscript>

Thermal deformations of Na₆(UO₂)₂O(MoO₄)₄ were studied by high-temperature powder X-ray diffraction. The compound crystallizes in the triclinic system, space group Р\(\bar 1\), a = 7.636(7), b = 8.163(6), c = 8.746(4) Å, α = 72.32(9)°, β = 79.36(4)°, γ = 65.79(5)°, V = 472.74(4) ų. It is stable in the temperature interval 20–700°С. The thermal expansion coefficients (TECs) are α₁₁ = 25.5 × 10^–6, α₂₂ = 7.8 × 10^–6, and α₃₃ = 1.1 × 10^–6 (°C)^–1. The orientation of the TEC pattern relative to the crystallographic axes is a₃₃^Z = 45°, a₃₃^X = 122°, a₂₂^Z = 59°, and a₂₂^X = 66°. The anisotropy of the thermal expansion is due to specific features of the crystal structure of the compound.     

Understanding of post deposition annealing and substrate temperature effects on structural and electrical properties of Gd<Subscript>2</Subscript>O<Subscript>3</Subscript> MOS capacitor

The purpose of this study is to understand the effects of substrate temperature (ST) and post deposition annealing (PDA) on the structural-electrical properties of Gd₂O₃ film and to evaluate the electrical performances of the MOS based devices formed with this dielectric. The Gd₂O₃/Si structures were annealed at 500, 600, 700, and 800 °C under N₂ ambient after the films were grown on heated p-Si substrate at various temperatures ranged from 20 to 300 °C by RF magnetron sputtering. For any given ST, the crystallization/grain size increased with increasing PDA temperature. The bump in the accumulation region or continuous decrease in the capacitance values of the inversion region of the C–V curves for 800 °C PDA was not observed. The lowest effective oxide charge density (Q _eff ) value was obtained to be ??1.13?×?10¹¹ cm^?2 from the MOS capacitor with Gd₂O₃, which is grown on heated Si at 300 °C and annealed at 800 °C. The density of the interface states (D _it ) was found to be in the range of 0.84?×?10¹¹ to 1.50?×?10¹¹ eV^?1 cm^?2. The highest dielectric constant (ε) and barrier height \(({\Phi _B})\) values were found to be 14.46 and 3.68, which are obtained for 20 °C ST and 800 °C PDA. The results show that the negative charge trapping in the oxide layer is generally more than that of the positive, but, it is reverse of this situation at the interface. The leakage current density decreased after 20 °C ST, but no significant change was observed for other ST values.     

Low temperature sintering and microwave dielectric properties of Zn<Subscript>3</Subscript>Mo<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramic

Crystal structure and dielectric properties of Zn₃Mo₂O₉ ceramics prepared through a conventional solid-state reaction method were characterized. XRD and Raman analysis revealed that the Zn₃Mo₂O₉ crystallized in a monoclinic crystal structure and reminded stable up to1020 °C. Dense ceramics with high relative density (~ 92.3%) were obtained when sintered at 1000 °C and possessed good microwave dielectric properties with a relative permittivity (ε _r ) of 8.7, a quality factor (Q?×?f) of 23,400 GHz, and a negative temperature coefficient of resonance frequency (τ _f ) of around ??79 ppm/°C. With 5 wt% B₂O₃ addition, the sintering temperature of Zn₃Mo₂O₉ ceramic was successfully lowered to 900 °C and microwave dielectric properties with ε _r ?=?11.8, Q?×?f?=?20,000 GHz, and τ _f = ??79.5 ppm/°C were achieved.     

Effect of Cooling Rate on Structure,Composition, and Superconducting Properties of FeTe<Subscript>0.6</Subscript>Se<Subscript>0.4</Subscript> Prepared by Self-Flux Technique

We have reported the synthesis and characterization of FeTe_0.6Se_0.4 prepared by self-flux technique with two different cooling rates, namely 0.8 and 4.5^°C/h. The effect of cooling rate on the samples has been characterized by using scanning electron microscopy (SEM) together with energy dispersive X-ray (EDX) spectrometer, X-ray diffraction (XRD), magnetization and magnetic hysteresis techniques. Four strong peaks were observed in the powder XRD patterns of both samples corresponding to the reflected intensities from the (001), (002), (003), and (004) planes of the tetragonal structure having space group P4/nmm. However, sample 2 has extra peaks corresponding to various non-superconducting binary phases of FeSe and FeTe. It can be concluded that the multiphase behavior of system increases with increasing cooling rate. The critical current value at 5 K, J _c (0), deduced from the M ? H loops is approximately 5.6 × 10⁴ A/cm² for sample 1 and 7.5 × 10⁴ A/cm² for sample 2. Increasing in the critical current value can be attributed to non-superconducting binary phases acting as effective pinning centers in the system.     

Synthesis and structure of (NH<Subscript>4</Subscript>)<Subscript>3</Subscript>[UO<Subscript>2</Subscript>(CH<Subscript>3</Subscript>COO)<Subscript>3</Subscript>]<Subscript>2</Subscript>(NCS)

The compound (NH₄)₃[UO₂(CH₃COO)₃]₂(NCS) (I) was synthesized and examined by single crystal X-ray diffraction analysis. The compound crystallizes in the rhombic system with the unit cell parameters a = 11.5546(4), b = 18.5548(7), c = 6.7222(3) Å, V = 1441.19(10) ų, space group P2₁2₁2, Z = 2, R = 0.0345. The uranium-containing structural units of crystals of I are isolated mononuclear groups [UO₂(CH₃COO)₃]^? belonging to crystal-chemical group AB ₃ ⁰¹ (A = UO ₂ ²⁺ , B⁰¹ = CH₃COO^?) of uranyl complexes. The specific features of packing of the uranium-containing complexes in the crystal structure are considered.     

Effects of Ge<Superscript>4+</Superscript> acceptor dopant on sintering and electrical properties of (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript> lead-free piezoceramics

Lead-free (K_0.5Na_0.5)(Nb_1-xGe _x )O₃ (KNN-xGe, where x = 0-0.01) piezoelectric ceramics were prepared by conventional ceramic processing. The effects of Ge⁴⁺ cation doping on the phase compositions, microstructure and electrical properties of KNN ceramics were studied. SEM images show that Ge⁴⁺ cation doping improved the sintering and promoted the grain growth of the KNN ceramics. Dielectric and ferroelectric measurements proved that Ge⁴⁺ cations substituted Nb⁵⁺ ions as acceptors, and the Curie temperature (T_C) shows an almost linear decrease with increasing the Ge⁴⁺ content. Combining this result with microstructure observations and electrical measurements, it is concluded that the optimal sintering temperature for KNN-xGe ceramics was 1020°C. Ge⁴⁺ doping less than 0.4 mol.%can improve the compositional homogeneity and piezoelectric properties of KNN ceramics. The KNN-xGe ceramics with x = 0.2% exhibited the best piezoelectric properties: piezoelectric constant d₃₃ = 120 pC/N, planar electromechanical coupling coefficient k_p = 34.7%, mechanical quality factor Q_m = 130, and tanδ = 3.6%.