一种高制动效率大角度硅扭转微镜MEMS光开关的设计

提出了一种利用静电力制动扭转梁带动微镜旋转,从而实现二维开关功能的MEMS光开关.使用ANSYS和COVENTOR软件对器件结构进行了模态、静态和瞬态分析,并对微镜制动梳齿的位置、器件的尺寸和扭转梁结构进行了优化.通过在微镜下方设计大空腔实现微镜90°的大角度扭转,使用新型衬底梳齿和结合扭转梁设计实现高静电制动效率,将制动电压降至18V.引入背面梳齿提高开关响应速度,模拟结果表明,光开关具有毫秒量级响应时间.与其他设计相比,该设计的微镜具有扭转角度大、制动效率高且开关速度较快的优点.     

扭转微镜的动力学模型及其动态特性分析

扭转微镜中的静电和机械两个物理场是非线性耦合的，因此系统的数学模型及动态特性分析就变得很复杂。首先建立了扭转微镜的非线性动力学模型，然后采用直接积分法求解了系统的阶跃响应，通过数值模拟发现系统的固有频率随施加电压增大而减小、振动平衡位置随电压增大发生偏移等现象。对这些非线性现象进行了分析，有助于微镜系统设计和扩展微镜系统的应用范围。     

考虑边缘效应的扭转微镜的动力响应分析

目前对扭转微镜力学特性方面的研究主要围绕静态特性展开，对于其动态特性的分析，已经给出了非耦合与耦合两种模型，但模型中的静电驱动力与驱动扭矩都是建立在无穷大板电容的基础上。而实际应用中的扭转微镜是有限尺度的，即在边缘处电力线会发生泄漏和弯曲，从而产生边缘效应。引入有限板电容的静电力修正公式，计及边缘效应对扭转微镜动态响应的影响。由于在计及边缘效应后，系统方程的驱动力项比较复杂，不能导出其解析表达式，故采用了数值积分方法进行相关处理，并采用迭代修正齐次扩容精细积分法求解非线性动力方程，得到了稳定、精确的数值解。计算结果显示，动态响应幅值在计及边缘效应后比未计及时要大，且扭转微镜的尺寸参数对边缘效应的影响有很大的关联性。     

大位移MEMS静电梳齿驱动器的设计及制作

文章提出了一种大位移低驱动电压的MEMS静电梳齿驱动器,对器件进行了设计、模拟、制作以及测试.梳齿驱动器的侧向不稳定性即侧向吸合现象限制了梳齿驱动器的最大驱动位移,发现侧向稳定因子S,随支撑梁刚度比ky/kx以及梳齿间隙g的增加而增加,随梳齿交叠长度的增加而减小;而驱动器的驱动电压随梳齿间隙的增加而升高.在以上研究的基础上,提出了一种采用小间隙无初始交叠、长度线性递增梳齿结构和高纵/横向刚度比的预弯曲支撑梁结构的梳齿驱动器.器件测试结果表明,驱动电压71V时,可以达到100μm的驱动位移,进一步测试表明,驱动器的基模共振频率为573Hz,Q值为35.88.     

基于塑性变形的自对准垂直位错梳齿结构制作工艺

研究了基于塑性变形工艺的自对准垂直位错梳齿结构制作工艺,主要包括采用非SOI硅片实现可动电极和固定电极的绝缘,通过KOH各向异性腐蚀制作凸台实现可动梳齿和固定梳齿的精确自对准,利用塑性变形使可动梳齿和固定梳齿在垂直方向上产生位错,以及结构释放后用硅片做掩膜制作电极引线块.最后利用该工艺成功地制作出一个垂直位错梳状驱动器.     

一维扭转式微镜的偏转角特性测试

设计了一种基于激光扫描与光学成像技术的测试方法来实现一维扭转式微镜的偏转角特性测试.该方法采用激光作为光源,利用微镜自身的光学扫描特性以及人眼的存储记忆效应,获得激光点光源在微镜静止与高频工作下在成像屏上的像点坐标,从而可以计算出微镜在一定驱动电压下的偏转角大小.误差分析表明该方法的平均测试误差±0.043°,测试精度1%;而实验数据进一步说明测试结果与参考曲线一致.所设计的测试方法摆脱了常规微镜测试对显微镜、干涉测量仪、CCD等精密复杂设备的依赖性,测试简单、易于实现且准确度较高,可为微镜应用提供可靠依据.     

静电排斥驱动六边形MEMS微镜

为消除静电吸引型微镜因存在静电吸合效应而导致的短路现象,基于电场的非均匀分布可以产生静电排斥力的原理,设计了一种静电排斥型六边形微机械反射镜.微镜包含7组驱动电极,最大的一组驱动电极由镜面和其正下方的六边形下电极组成,其他6组分别位于微镜的各条边上,其中3组为梳齿结构,另外3组为U形弹簧,镜面由3组U形弹簧支撑.利用有限元软件对微镜频率响应和暂态响应特性进行了仿真,结果表明谐振频率高达7kHz,暂态响应时间小于0.0003s.利用表面硅工艺加工出了样片,并用白光干涉仪对其静态位移特性进行了测试,在50V直流电压下微镜位移量为0.7μm.由结果可知该微镜可消除静电吸合效应.故该微镜不仅可用于对反射光进行光程和相位的调制,也可用于自适应光学系统中波前畸变的校正.     

总剂量辐射下的NMOS/SOI器件背栅阈值电压漂移模型

SOI(绝缘体上硅)器件在总剂量辐照下的主要性能退化是由于SOI器件的背栅阈值电压漂移引起的背沟道漏电。本文首先采用二维有限元方法,对辐射在SOI器件的埋氧层中的感生氧化物电荷进行模拟,然后分析此氧化物电荷对器件的外部电学特性的影响,建立了器件在最劣偏置下辐射引起的背栅MOSFET的阈值电压漂移模型,提取背栅MOSFET受辐射影响参数,以用于在SOI电路设计中准确的评估辐射对SOI电路的影响。模拟数据和试验数据具有很好的一致性。     

微梳齿结构动态特性参量的光学测量与分析(英文)

光学测试方法属于非接触测量,目前已经成为MEMS动态测试领域的研究热点.为了实时检测梳齿式微结构驱动模态的谐振特性,由高速摄像机和显微镜组成的计算机微视觉光学测试系统和相关的视频分析软件被用于测量微梳齿结构的动态特性.利用这套微视觉光学测试系统,可以获得微梳齿结构驱动模态的位移响应曲线和幅频特性曲线,并可以进一步得到驱动模态的固有频率、品质因子、阻尼系数等参数.测得的结果与计算结果相比,一致性较好.     

短沟道SOI BJMOSFET的阈值电压

提出了一种适用于短沟道SOI BJMOSFET阈值电压特性分析的电荷分享物理模型,详细讨论了短沟道SOI BJMOSFET背界面处于积累、反型以及全耗尽三种状态时的阈值电压,并利用Math-ematica软件进行数值模拟得到阚值电压的特性曲线.通过理论分析和计算机模拟,证明短沟道SOI BJMOSFET阈值电压的可控性很强,更适用于现代ULSI低压低功耗的要求.     

光纤式表面粗糙度测量仪的研制

本文论述了光纤表面粗糙度测量仪研制过程中关键问题的解决方法，对非线性特性的参数计算，零点漂移，信号噪声，不同加工表面特性差异的处理都给出了完美的解决方法。该仪器以光散射理论为测量原理，用光纤为传输媒介，并用单片机８０９８进行计算，数据处理和测量智能控制。     

光纤定位器件微小孔抛光技术

提出了利用金刚石涂层的金属线对光纤定位器件上微小孔抛光的新方法．为验证该方法,设计并制造了一个微型样机．该机器采用了振动系统以提高加工效率．为优化加工参数进行了系统的工艺研究．实验结果表明,采用这种抛光方法加工的微小内孔表面粗糙度可达到0．065μm．     

Polarized light reflection from strained sinusoidal surfaces

We propose optical polarization imaging as a minimally invasive technique for measuring the mechanical properties of plastics and soft tissues through their change in reflectance properties with applied strain or force. We suggest that changes in surface roughness are responsible for the linear reflectivity changes with applied stretch or strain. Several aspects of this model are tested, including the dependence on the angle of incidence, the change in scattering and absorption coefficients with strain, and the lateral spatial resolution. The application of the technique to multilayer structures such as skin and competing optical effects such as laser speckle are discussed.     

Development of a laser-scattering-based probe for on-line measurement of surface roughness

The design and properties of an optical probe for on-line measurement of surface roughness are discussed. Based on light scattering, a probe that consists of a laser diode, a measuring lens, and a linear photodiode array was designed to detect surface roughness, in which the light scattered from a test surface at a relatively large scattering angle phi (=28 degrees) can be collected to enhance measuring range and repeatability. A coaxial design that incorporates a dual-laser probe and compressed air makes the proposed system insensitive to the position of the test surface and to surface conditions such as the presence of debris, vibration, and lubricants that result from machining. The results from measurements of several sets of specimens have demonstrated the feasibility of measuring surface roughness by using light scattering. On-line measurement on a diamond-turning lathe has shown that the proposed technique is stable and compact enough to be applicable to on-line measurement of surface roughness of an engineering surface.     

Influence of the surface roughness on the properties of Au films measured by surface plasmon resonance and X-ray reflectometry

Thickness and refractive index of Au films thermally evaporated onto glass substrates and with an underlayer of Cr are determined from surface plasmon resonance. The results for the thickness are found to agree very well with those from X-ray reflectivity when a simple model of layers with flat interfaces is used. Plasmon propagation along thin films is influenced by radiative damping due to scattering from surface roughness. To study this influence the surface roughness of the glass substrate, Cr an Au layers are measured by X-ray reflectometry and the results used to introduce three intermediate layers with effective refractive indices and thicknesses corresponding to the roughness. Then Fresnel's equations are used to fit the reflectivity and to deduce the layer properties. It is found that the roughness affects to a great extent the optical parameters of the Au films even when it is smaller than 1 nm. In particular, the absolute value of real part of the dielectric constant decreases while its imaginary part increases when those effects are not taken into account.     

Effect of Crystallographic Anisotropy on Micro EDM Process

In this paper, experiments are conducted by machining from different crystallographic orientations of monocrystalline silicon, and the effects of crystallographic orientation on the micro electrical discharge machining (EDM) process are discussed. The results demonstrate that the machining speed and surface roughness are varied when crystallographic orientation changes. The surface roughness is seen to vary by as much as twofold with crystallographic orientation, while the ratio between the maximum and minimum values of material removal rate is 1.76. The unique material removal mechanism of micro EDM enhances the effects of crystal anisotropy on micro electrical discharge machining process.     

Theory of digital modulation of semiconductor laser diode remotely

The authors present a new theory that can be applied to modulate the semiconductor laser diode (LD) remotely. The proposed scheme utilizes the effect of incoherent external optical feedback (EOF) on the LD output optical signal. In particular, owing to the high increase in threshold carrier density, the LD will be impelled to turn off when the value of external reflectivity is equal to the laser back reflectivity. Thus, by exposing the LD, which is injected with a dc-current higher than threshold, to incoherent EOF digital signal (which conveys the transmitted information), the output optical signal of LD can be modulated accordingly.     

Improvement in thickness uniformity of thick SOI by numerically controlled local wet etching

Silicon-on-insulator (SOI) wafers are promising semiconductor materials for high-speed LSIs, low-power-consumption electric devices and micro electro mechanical systems (MEMS). The thickness distribution of an SOI causes the variation of threshold voltage in electronic devices manufactured on the SOI wafer. The thickness distribution of a thin SOI, which is manufactured by applying a smart cut technique, is comparatively uniform. On the other hand, a thick SOI has a large thickness distribution because a bonded wafer is thinned by conventional grinding and polishing. For a thick SOI wafer with a thickness of 1 microm, it is required that the tolerance of thickness variation is less than 50 nm. However, improving the thickness uniformity of a thick SOI layer to a tolerance of +/- 5% is difficult by conventional machining because of the fundamental limitations of these techniques. We have developed numerically controlled local wet etching (NC-LWE) technique as a novel deterministic subaperture figuring and finishing technique, which utilizes a localized chemical reaction between the etchant and the surface of the workpiece. We demonstrated an improvement in the thickness distribution of a thick SOI by NC-LWE using an HF/HNO3 mixture, and thickness variation improved from 480 nm to 200 nm within a diameter of 170 mm.     

Implementation of surface roughness scattering in Monte Carlo modeling of thin SOI MOSFETs using the effective potential

In Monte Carlo simulations of carriers in confined layers, quantum mechanical effects render ineffective the reflection boundary condition method of including surface roughness scattering. Therefore, to include the effects of both the quantum confinement and surface roughness in thin silicon on insulator (SOI) MOSFETs, the surface roughness must be handled differently. In this paper, we include the surface roughness as an additional scattering mechanism in a three-dimensional Poisson-ensemble Monte Carlo simulation that includes the quantum mechanical effects with the effective potential. We find that this method yields appropriate results for both the quantum confinement and surface roughness, provided adequate steps are taken when implementing the surface roughness scattering rate.     

SOI光电子集成

SOI（Silicon-on-Insulator)光电子集成已成为十分引人注目的研究课题，其工艺与CMOS工艺完全兼容，可以实现低成本的SOI基整片集成光电子回路。本文综述了近几年来SOI集成光电子器件的发展以及一些最新的研究进展，着重分析几种最新型光无源器件的工作原理和结构，包括SOI光波导、SOI光波导耦合器、SOI光波导开关、相位阵列波导光栅（PAWG）、基于SOI的光探测器等，并介绍了中国科学院半导体所集成光电子国家重点实验室的研究进展。