Orientation and temperature dependence of the tensile behavior of GaN nanowires: an atomistic study

Gallium nitride (GaN) is a high-temperature semiconductor material of considerable interest. It emits brilliant light and has been considered as a key material for the next generation of high frequency and high power transistors that are capable of operating at high temperatures. Due to its anisotropic and polar nature, GaN exhibits direction-dependent properties. Growth directions along [001], [1?10] and [110] directions have all been synthesized experimentally. In this work, molecular dynamics simulations are carried out to characterize the mechanical properties of GaN nanowires with different orientations at different temperatures. The simulation results reveal that the nanowires with different growth orientations exhibit distinct deformation behavior under tensile loading. The nanowires exhibit ductility at high deformation temperatures and brittleness at lower temperature. The brittle to ductile transition (BDT) was observed in the nanowires grown along the [001] direction. The nanowires grown along the [110] direction slip in the {010} planes, whereas the nanowires grown along the [1?10] direction fracture in a cleavage manner under tensile loading.     

Unconventional gallium oxide nanowires

Zigzag and helical beta-Ga(2)O(3) one-dimensional nanostructures were produced by thermal evaporation of gallium oxide in the presence of gallium nitride. High-resolution TEM analysis indicates that each individual zigzag nanostructure has a periodic arrangement of three distinct blocks: two structurally perfect blocks mirrored with respect to each other on the (002) plane, and one stacking-fault-rich block sandwiched between them. In a zigzag nanostructure, the growth orientation of a beta-Ga(2)O(3) crystal changes alternately in three blocks. The zigzag nanostructure as a whole has the [001] axial direction. In addition to zigzag nanostructures, single-crystalline helical nanowires were also obtained.     

Synthesis of Zn2SnO4 nanowires and their photoluminescence properties

Single-crystalline Zn2SnO4 nanowires were successfully synthesized on a photoresist-coated Si substrate using a facile chemical vapor deposition method. The growth of the nanowires followed a self-catalytic vapor-liquid-solid process. During annealing, the photoresist was carbonized into a complex glassy and graphite carbon structure. The immiscibility between the carbon layer and the in-situ formed Zn2SnO4 was a prime factor in the formation of the one-dimensional Zn2SnO4 nanowires. A broad blue-red emission band centered at 490.4 nm was observed in the photoluminescence spectrum of these nanowires, and it was related to the oxygen vacancies in these nanowires.     

Crystallographic alignment of high-density gallium nitride nanowire arrays

Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics. Elucidation of the vapour-liquid-solid growth mechanism has already enabled precise control over nanowire position and size, yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a nanowire array. Control over the nanowire growth direction is extremely desirable, in that anisotropic parameters such as thermal and electrical conductivity, index of refraction, piezoelectric polarization, and bandgap may be used to tune the physical properties of nanowires made from a given material. Here we demonstrate the use of metal-organic chemical vapour deposition (MOCVD) and appropriate substrate selection to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties. Epitaxial growth of wurtzite gallium nitride on (100) gamma-LiAlO(2) and (111) MgO single-crystal substrates resulted in the selective growth of nanowires in the orthogonal [1\[Evec]0] and [001] directions, exhibiting triangular and hexagonal cross-sections and drastically different optical emission. The MOCVD process is entirely compatible with the current GaN thin-film technology, which would lead to easy scale-up and device integration.     

First principles study of electronic properties of gallium nitride nanowires grown along different crystal directions

The electronic properties of hydrogen-saturated GaN nanowires with different orientations and sizes are investigated using first principles calculations, and three types of nanowires oriented along the [0 0 1], [1 1 0] and [1 −1 0] crystal directions are considered. The electronic properties of nanowires in all three directions are extremely similar. All the hydrogen-saturated GaN nanowires show semiconducting behavior with a direct band gap larger than that of bulk wurtzite GaN. Quantum confinement leads to a decrease in the band gap of the nanowires with increasing nanowire size. The [0 0 1]-oriented nanowires with hexagonal cross sections are energetically more favorable than the [1 0 0]- and [1 −1 0]-oriented nanowires with triangular cross sections.     

Fabrication of reliable semiconductor nanowires by controlling crystalline structure

One-dimensional SnO(2) nanomaterials with wide bandgap characteristics are attractive for flexible and/or transparent displays and high-performance nano-electronics. In this study, the crystallinity of SnO(2) nanowires was regulated by controlling their growth temperatures. Moreover, the correlation of the crystallinity of nanowires with optical and electrical characteristics was analyzed. When SnO(2) nanowires were grown at temperatures below 900?°C, they showed various growth directions and abnormal discontinuity in their crystal structures. On the other hand, most nanowires grown at 950?°C exhibited a regular growth trend in the direction of [100]. In addition, the low temperature photoluminescence measurement revealed that the higher growth temperatures of nanowires gradually decreased the 500 nm peak rather than the 620 nm peak. The former peak is derived from the surface defect related to the shallow energy level and affects nanowire surface states. Owing to crystallinity and defects, the threshold voltage range (maximum-minimum) of SnO(2) nanowire transistors was 1.5 V at 850?°C, 1.1 V at 900?°C, and 0.5 V at 950?°C, with dispersion characteristics dramatically decreased. This study successfully demonstrated the effects of nanowire crystallinity on optical and electrical characteristics. It also suggested that the optical and electrical characteristics of nanowire transistors could be regulated by controlling their growth temperatures in the course of producing SnO(2) nanowires.     

Metal organic chemical vapour deposition of vertically aligned ZnO nanowires using oxygen donor adducts

Vertically aligned zinc oxide (ZnO) nanowires (NWs) have been grown by liquid injection Metal Organic Chemical Vapour Deposition, using oxygen donor adducts of Me2Zn. The growth and characterisation of the nanowires grown using [Me2Zn(L)] where L = monodentate ethers, tetrahydrofuran (C4H8O) (1), tetrahydropyran (C5H10O) (2), furan (C4H4O) (3) and the bidentate ethers, 1,2-dimethoxyethane (C4H12O2,) (4) 1,4-dioxane (C4H8O2) (5) and 1,4-thioxane (C4H8SO) (6) is discussed. Single crystal X-ray structures of (4), (5), (6) have been established and are included here. The ZnO NWs were deposited in the absence of a seed catalyst on Si(111) and F-doped SnO2/glass substrates over the temperature range 350-600 degrees C. X-ray diffraction (XRD) data shows that the nanowires grown from all adduct precursors were deposited in the wurtzitic phase.     

Effect of the ammoniating time on microstructure and morphology of one-dimensional Mg-doped GaN nanowires catalysed with Au

Mg-doped GaN nanowires have been successfully synthesised on Si(1?1?1) substrates by magnetron sputtering through ammoniating Ga₂O₃/Au thin films, and the effect of ammoniating time on microstructure and morphology were analysed in detail. X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy and photoluminescence spectrum were carried out to characterise the microstructure, morphology and optical properties of the GaN samples. The results demonstrate that the nanowires after ammonification at 900°C for 15?min are single crystal GaN with a hexagonal wurtzite structure and high crystalline quality, having the size of 50–80?nm in diameter, more than 10 microns in length and good emission properties. The growth direction of this nanowire is parallel to [0?0?1] direction of hexagonal unit cell. Ammoniating time has a great impact on the microstructure, morphology and optical properties of the GaN nanowires.     

Cracking mechanism in AlN(11―20)/α-Al2O3(1―102) heteroepitaxial films grown by MOCVD

The cracking mechanism in AlN(1120)/-Al₂O₃(1102) heteroepitaxial film grown by MOCVD is discussed. The crystal structure and microstructure of an AlN/Al₂O₃ film and an AlN/GaN/Al₂O₃ film are compared using high-resolution X-ray diffractometry, optical microscopy, scanning electron microscopy, and transmission electron microscopy. In the AlN/Al₂O₃ film, cracks parallel to the [1100]_AlN direction and perpendicular to the interface of the film and the substrate are observed. The cracks do not propagate to the AlN film surface. The tips of the cracks are widest in the AlN film, and the cracks narrow as they penetrate deeply into the substrate. On the other hand, in the AlN/GaN/Al₂O₃ film, no cracks are observed. A concave curvature is observed in the AlN film with cracks on the Al₂O₃ substrate along the [0001]_AlN direction, whereas a convex curvature is observed in the AlN film without cracks. On the basis of these results, the cracks, formed in the AlN film due to the tensile stress along the [0001]_AlN direction during the epitaxial growth, propagate to the AlN film surface and into the Al₂O₃ substrate. On the other hand, in the AlN/GaN/Al₂O₃ film, it seems that the GaN buffer layer suppresses the tensile stress; as a consequence, no cracks occur.     

The template-free synthesis of square-shaped SnO(2) nanowires: the temperature effect and acetone gas sensors

Square-shaped single-crystalline SnO(2) nanowires and their sphere-like hierarchical structures were synthesized successfully with a template-free hydrothermal approach. It was found that an intermediate phase-Na(2)Sn(OH)(6)-is first produced because it is slow to dissolve in ethanol/water media. The intermediate phase gradually decomposes and converts into SnO(2) at temperatures higher than 200?°C. The reaction temperature also affects the microstructure of SnO(2) nanomaterials. Uniform square-shaped SnO(2) nanowires, which form sphere-like hierarchical structures in 100% structure yield, can be produced at 285?°C on a large scale. The diameter of the nanowires shows a decrease accompanying the increase of the reaction temperature. The temperature effect could be a result of the faster and oriented growth of SnO(2) nanowires along their [Formula: see text] direction at higher temperature. Chemical sensors constructed with square-shaped SnO(2) nanowires exhibit excellent stability, good sensitivity and selectivity, as well as a quick response and short recovery times under exposure to acetone gas in practical applications.     

Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)

We have determined the in-plane orientation of GaN nanowires relative to the Si (111) substrate on which they were grown. We used x-ray diffraction pole figure measurements to evidence two types of crystallographic orientation, all the nanowires having [Formula: see text] lateral facets. The proportion of these two orientations was determined and shown to be influenced by the pre-deposition of Al(Ga)N intermediate layers. In the main orientation, the GaN basal [Formula: see text] directions are aligned with the [Formula: see text] directions. This orientation corresponds to an in-plane coincidence of GaN and Si lattices.     

ZnO-Sn:ZnO core-shell nanowires and ZnO-Zn2SnO4 comb-like nanocomposites

Novel single-crystalline ZnO-Sn:ZnO (SZO) core-shell nanowires and ZnO-Zn2SnO4 (ZTO) comb-like nanocomposites were synthesized by thermal chemical vapor deposition at a low temperature of 650 degrees C. Scanning electron microscopy and transmission electron microscopy show the diameters and lengths of the core-shell nanowires are in ranges of 25-60 nm and 300-500 nm, respectively. The atomic ratios of Sn to (Zn + Sn) in the central and shell parts of the nanowire are 0.4 at.% and 6.1 at.%, respectively. The ZnO-ZTO comb-like nanocomposites possess ZnO nanocombs with ZTO nano-layers deposited on both sides of them. The ZnO branches and ZTO layers are single-crystalline wurtzite and spinel structures growing along the [0002] and [111] directions, respectively. Room-temperature cathodoluminescence measurements show the nanocomposites exhibit strong ultraviolet (UV) emissions at 300, 384 nm, and a broad green emission. The novel luminescence shows promising singularity for opto-electronic applications.     

Growth and optical properties of sallow-like hierarchical SnO2 nanostructures

Novel self-organized hierarchical SnO2 nanostructures have been successfully prepared by vapor phase transport with the assistance of a stainless-steel grid at 950 degrees C. Scanning electron microscopy shows that the synthesized product displays interesting sallow-like morphology, in which numerous secondary branches (beak-like nanowires) are grown randomly around the main stems (microwires). Transmission electron microscopy analysis indicates that the branches grow along a direction of [100] and the beak is formed with the growth direction switching to [110]. A room temperature photoluminescence spectrum of the present SnO2 nanostructures shows a strong emission at 572 and 604 nm(-1).     

Optical properties of zigzag twinned geometry of Zn2SnO4 nanowires

High-density single-crystalline Zn2SnO4 nanowires have been successfully synthesized by using a simple thermal evaporation method by heating a mixture of ZnO and SnO2 nano powders. The products in general contain various geometries of wires, with an average diameter of 80-100 nm. These nanowires are ultra-long, up to 100 microns. The transmission electron microscopy study showed that these nanowires exhibited zigzag twinned geometry, and grow along the (111) direction. Low-temperature photoluminescence properties of the nanowires were measured, showing a strong green emission band at about 515 nm and a weak peak corresponding to UV emission at about 378 nm, which have not been reported before.     

Synthesis of vertically oriented GaN nanowires on a LiAlO2 substrate via chemical vapor deposition

Vertically oriented nanowires (NWs) of single-crystalline wurtzite GaN have been fabricated on γ-LiAlO₂ (100) substrate coated with a Au layer, via a chemical vapor deposition process at 1000 °C using gallium and ammonia as source materials. The GaN NWs grow along the nonpolar [100] direction with steeply tapering tips, and have triangular cross-sections with widths of 50–100 nm and lengths of up to several microns. The GaN NWs are formed by a vapor-liquid-solid growth mechanism and the tapering tips are attributed to the temperature decrease in the final stage of the synthesis process. The aligned GaN NWs show blue-yellow emission originating from defect levels, residual impurities or surface states of the GaN NWs, and have potential applications in nanotechnology.     

Highly conductive coaxial SnO(2)-In(2)O(3) heterostructured nanowires for Li ion battery electrodes

Novel SnO(2)-In(2)O(3) heterostructured nanowires were produced via a thermal evaporation method, and their possible nucleation/growth mechanism is proposed. We found that the electronic conductivity of the individual SnO(2)-In(2)O(3) nanowires was 2 orders of magnitude better than that of the pure SnO(2) nanowires, due to the formation of Sn-doped In(2)O(3) caused by the incorporation of Sn into the In(2)O(3) lattice during the nucleation and growth of the In(2)O(3) shell nanostructures. This provides the SnO(2)-In(2)O(3) nanowires with an outstanding lithium storage capacity, making them suitable for promising Li ion battery electrodes.     

Controlled growth of vertically aligned ZnO nanowires with different crystal orientation of the ZnO seed layer

A novel synthesis and growth method achieving vertically aligned zinc oxide (ZnO) nanowires on a silicon dioxide (SiO(2)) coated silicon (Si) substrate is demonstrated. The growth direction of the ZnO nanowires is determined by the crystal structure of the ZnO seed layer, which is formed by the oxidation of a DC-sputtered Zn film. The [002] crystal direction of the seed layer is dominant under optimized thickness of the Zn film and thermal treatment. Vertically aligned ZnO nanowires on SiO(2) coated Si substrate are realized from the appropriately thick oxidized Zn seed layer by a vapor-solid growth mechanism by catalyst-free thermal chemical vapor deposition (CVD). These experimental results raise the possibility of using the nanowires as functional blocks for high-density integration systems and/or photonic applications.     

Linear electro-optic properties of orthorhombic PZN-8%PT single crystal

The optical transmittance spectra of relaxor ferroelectric 0.92Pb(Zn(1/3)Nb(2/3))O(3)-0.08PbTiO(3) (PZN-8%PT) single crystals poled along different directions have been systematically studied at room temperature. After being poled along the [011] direction, the transmittance of induced orthorhombic PZN-8%PT single crystal is more than 50% from 0.5 to 5.7 μm, which is much higher than that poled along the [001] and [111] directions. The refractive indices and linear electro-optic properties of the orthorhombic PZN-8%PT single crystal were characterized at a wavelength of 632.8 nm. Large electro-optic responses were observed, (γ33) = 220 pm/V, (γ13) = 62 pm/V, and (γ23) = 23 pm/V. Thus, orthorhombic PZN-8%PT single crystal is a promising material for high-performance electro-optic devices.     

ZnO nanocone arrays on self-assembled Zn2SnO4 base: synthesis, structure, growth mechanism and optical property

ZnO nanocone arrays on self-assembled Zn2SnO4 base were successfully synthesized via a thermal evaporation method of two-step temperature-rising. The as-prepared ZnO nanocone products had a well crystalline wurzite structure with symmetry about the growth direction along [0001]. Based on the calculation of the lattice misfit between different families of crystal planes of ZnO and Zn2SnO4, Stranski-Krastanow growth mode of ZnO nanocones was proposed in which the ZnO relaxing layer plays an important role. The orientation relationship of nanocone and base was also investigated. For the optical property of this nanocones-base system, a strong green fluorescence-emission at 523 nm was detected while the Zn2SnO4 base provides a defect peak at 486 nm which broadens the green emission band.     

Anisotropic lattice coherency of GaAs nanocrystals deposited on Si(100) surface by molecular beam epitaxy

Lattice coherency and morphology of GaAs nanocrystals grown on Si(100) substrate have been studied by transmission electron microscope in order to see growth mechanism of the nanocrystals. GaAs nanocrystals consisting of four {111} facet planes and a rectangular basal plane with four sides along [01 ] and [011] directions have grown on the Si surface. Either (011) or (01) lattice planes along the minor axis on the rectangular basal plane in the GaAs nanocrystal are completely-coherent with {011} lattice planes in the Si substrate. On the other hand, another (01) or (011) lattice planes along the major axis are partially-coherent with those in the Si substrate. When the lattice planes of the either (011) or (01), which is randomly determined by local atomic structures, become partially-coherent with those in the Si substrate to relax accumulated lattice strain, the growth rate of nanocrystal is remarkably increased along the direction parallel to unstrained (011) or (01) planes which prevents from each area of the strained {011} planes in the nanocrystals increasing. The anisotropic lattice coherency between the GaAs nanocrystals and the Si substrate causes the anisotropic morphology of the GaAs nanocrystals which is elongated the directions parallel to the strained {011} planes.