磁控溅射与氨化法催化合成GaN纳米棒

使用一种新奇的稀土元素作为GaN纳米棒生长的催化剂,通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜成功合成了大规模的GaN纳米棒.采用扫描电子显微镜,X射线衍射,透射电子显微镜,高分辨透射电子显微镜和傅立叶红外吸收光谱来检测样品的形态,结构和成分.研究结果表明,合成的样品为六方纤锌矿结构的单晶GaN纳米棒.最后讨论了GaN纳米棒的生长机理.     

氨化温度对氨化Ga2O3/Al膜制备GaN纳米结构材料的影响

采用磁控溅射的方法在Si(111)衬底上溅射沉积了Ga2O3/Al膜,并通过氨化的方法在Si(111)衬底上获得了GaN纳米结构材料,研究了不同的氨化温度对生成GaN纳米结构材料的影响.对样品进行了傅立叶红外吸收(FTIR)、X射线衍射(XRD)、扫描电镜(SEM)、透射电镜(TEM)以及高分辨电镜(HRTEM)测试,分析了不同温度对GaN样品的结构、组分和形貌等特性的影响.结果表明,用该方法在950℃的氨化温度下得到了大量的六方GaN纳米棒.     

退火温度和ZnO缓冲层对氨化Ga2O3/ZnO薄膜合成GaN纳米结构的影响

利用射频磁控溅射法在Si(111)衬底上先溅射ZnO缓冲层,再溅射Ga2O3薄膜,然后在开管炉中不同温度下通氨气进行氨化反应生长GaN薄膜.分析结果表明,利用该方法制备的GaN薄膜是六角纤锌矿多晶结构,并且随着氨化温度的升高,GaN薄膜向棒状和线状形态转变.同时分析了ZnO缓冲层对形成GaN纳米结构的影响.     

氨化Si基Ga2O3/V薄膜制备GaN纳米线

为了制备高质量的GaN纳米结构,采用磁控溅射技术先在硅衬底上制备Ga2O3/V薄膜,然后在流动的氨气中进行氨化反应,成功制备出GaN纳米线.采用X射线衍射(XRD)、傅里叶红外吸收光谱(FTIR)、扫描电子显微镜(SEM)和透射电子显微镜(TEM)对样品进行分析.研究结果表明,采用此方法得到了六方纤锌矿结构的GaN纳米线,且900℃时制备的纳米线质量最好,直径在60nm左右,长度达到十几微米.     

氨化Si基Ga2O3/Ti制备GaN纳米线

采用磁控溅射技术先在硅衬底上制备Ga2O3/Ti薄膜,然后在950℃时于流动的氨气中进行氨化反应制备GaN薄膜.X射线衍射(XRD)、傅立叶红外吸收光谱(FTIR)、选区电子衍射(SAED)和高分辨透射电子显微镜(HRTEM)的结果表明采用此方法得到了六方纤锌矿结构的GaN单晶纳米线.通过扫描电镜(SEM)观察发现纳米线的形貌,纳米棒的尺寸在50～150nm之间.     

氨化Ga_2O_3/Pd/Sapphire薄膜制备GaN纳米线

利用金属元素钯作催化剂,采用磁控溅射后氨化法,成功的在Sapphire衬底上制备出GaN纳米线。X射线衍射和X射线光电子能谱研究显示合成的纳米线具有六方纤锌矿GaN结构。通过扫描电子显微镜,透射电子显微镜和高分辨透射电子显微镜观察分析得出GaN纳米线为单晶结构,其纳米线的直径约为10～60nm,长度达几十个微米。室温下以325nm波长的光激发样品表面,发现GaN带边发光峰有较弱的蓝移。最后简单讨论了GaN纳米线的生长机制。     

氨化Ga2O3/TiO2/Si薄膜制备GaN纳米线

为了制备高质量的GaN纳米结构，采用磁控溅射技术先在硅衬底上制备Ga2O3／TiO2薄膜，然后在950℃时于流动的氨气中进行氨化反应，成功制备出GaN纳米线．采用X射线衍射（XRD）、傅里叶红外吸收光谱（FTIR）、扫描电子显微镜（SEM）和高分辨透射电子显微镜（HRTEM）对样品进行分析．研究结果表明，采用此方法得到了六方纤锌矿结构的GaN单晶纳米线，纳米线的直径在100～400nm，纳米线的长度在3～10μm．     

氨化Ga2O3/Nb薄膜制备GaN纳米线

采用射频磁控溅射技术先在硅衬底上制备Ga2O3/ Nb薄膜,然后在900℃时于流动的氨气中进行氨化制备GaN纳米线.用X射线衍射(XRD)、傅立叶红外吸收光谱(FTIR)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)详细分析了GaN纳米线的结构和形貌.结果表明:采用此方法得到的GaN纳米线为六方纤锌矿结构,其纳米线的直径大约在50～100nm之间,纳米线的长约几个微米.室温下以325nm波长的光激发样品表面,只显示出一个位于364.4nm的很强的紫外发光峰.最后,简单讨论了GaN纳米线的生长机制.     

氨化Si基Ga2O3/Co薄膜制备GaN纳米线

采用磁控溅射技术先在硅衬底上制备Ga2O3/Co薄膜,然后在900℃时于流动的氨气中进行氨化反应制备GaN薄膜.X射线衍射(XRD)、傅立叶红外吸收光谱(FTIR)、选区电子衍射(SAED)和高分辨透射电子显微镜(HRTEM)的分析结果表明,采用此方法得到了六方纤锌矿结构的GaN单晶纳米线.通过扫描电镜(SEM)观察发现纳米线的形貌,纳米线的尺寸在 50～200nm之间.     

Si基ZnO缓冲层溅射Ga2O3氨化反应生长GaN薄膜

利用射频磁控溅射法在Si（111）衬底上先溅射ZnO缓冲层,再溅射Ga2O3薄膜,然后在开管炉中分别以850℃,900℃,950℃和1 000℃等温度及常压下通氨气进行氨化,反应生长GaN薄膜.利用该方法制备的GaN薄膜是沿c轴方向择优生长的六角纤锌矿多晶结构,并且随着氨化温度的升高,GaN向棒状和线状形态生长.     

氨化Si基Ga2O3/In制备GaN薄膜

研究了Ga2O3/In 膜反应自组装制备GaN薄膜,再将Ga2O3/In膜在高纯氨气气氛中氨化反应得到GaN薄膜,用X射线衍射(XRD),傅里叶红外吸收(FTIR),扫描电镜(SEM),原子力显微镜(AFM),透射电镜(TEM)对样品进行结构,形貌的分析.测试结果表明:用此方法得到了六方纤锌矿结构的GaN多晶膜,且900℃时成膜的质量最好.     

硅基正六边形氮化镓纳米颗粒薄膜的制备,结构和形貌特性

本文通过在ZnO/Si(111)衬底上,利用JCK-500A型射频磁控溅射系统溅射氧化镓靶得到氧化镓薄膜.然后将硅基Ga2O3置于管武石英炉中,在850℃的氨化温度下氨化15min后,成功制备出GaN薄膜,该薄膜由正六边形的晶粒组成.X射线衍射(XRD)表明GaN具有六方纤锌矿结构,晶格常数为a=0.318nm和c=0.518nm.X射线光电子能谱(XPS)的测试确定了样品中Ga-N键的形成,并且Ga和N的化学计量比为1:1.用扫描电镜(SEM)和原子力显微镜(AFM)观察发现,样品表面非常光滑和平整.透射电镜(TEM)表明薄膜由正六边形晶粒组成.选区电子衍射(SAED)进一步验证了GaN薄膜的六方纤锌矿结构.最后,简单地讨论了其生长机制.     

Synthesis of radial-aligned GaN nanorods by ammoniating Ga2O3 films on Mg layer deposited on Si(111) substrates

Radial-aligned GaN nanorods were synthesized by ammoniating Ga₂O₃ films on Mg layer deposited on Si(111) substrates. The products were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectra (FTIR) and high-resolution transmission electron microscopy (HRTEM). The SEM images indicated that the products consisted of radial-aligned GaN nanorods. The XRD and the selective area electron diffraction (SAED) patterns showed that nanorods were hexagonal GaN single crystals.     

溅射后退火簇状GaN纳米棒的生长及其镁的作用

采用磁控溅射技术先在硅衬底上制备Ga2O3/Mg薄膜,然后在1000℃时于流动的氨气中进行氨化反应制备GaN薄膜.X射线衍射(XRD)、X射线光电子能谱(XPS)、选区电子衍射(SAED)和高分辨透射电子显微镜(HRTEM)的结果表明采用此方法得到了六方纤锌矿结构的GaN单晶纳米棒.通过扫描电镜(SEM)观察发现纳米棒的形貌,纳米棒的直径在200～600nm之间.我们对镁层的作用进行了简单探讨.     

氮化ZnO/Ga2O3薄膜合成GaN纳米管

利用射频磁控溅射法在Si(111)衬底上先溅射ZnO中间层,接着溅射Ga2O3 薄膜,然后ZnO/Ga2O3薄膜在管式炉中常压下通氨气进行氮化,高温下ZnO层在氨气的气氛中挥发,而Ga2O3薄膜和氨气反应合成出GaN纳米管.X射线衍射(XRD)测量结果表明利用该方法制备的GaN具有沿c轴方向择优生长的六角纤锌矿结构.利用傅里叶红外光谱(FTIR)研究了所制备样品的光学性质.利用透射电子显微镜(TEM)和选区电子衍射(SAED)观测了样品的形貌和晶格结构.     

Synthesis of GaN nanowires through Ga2O3 films' reaction with ammonia

GaN nanowires were synthesized by ammoniating Ga₂O₃ films on Ti layers deposited on Si (111) substrates at 950 °C. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR) and high-resolution transmission electron microscopy (HRTEM). The XRD, FTIR and HRTEM studies showed that these nanowires were hexagonal GaN single crystals. SEM observation demonstrated that these GaN nanorods with diameters ranging from 50 nm to 100 nm and lengths up to several micrometers intervene with each other on the substrate.     

Synthesis of GaN nanorods by ammoniating Ga2O3 films on TiO2 (rutile) layer deposited on Si(111) substrates

GaN nanorods have been synthesized by ammoniating Ga₂O₃ films on a TiO₂ middle layer deposited on Si(111) substrates. The products were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transformed infrared spectra (FTIR) and high-resolution transmission electron microscopy (HRTEM). The XRD analysis indicates that the crystallization of GaN film fabricated on TiO₂ middle layer is rather excellent. The FTIR, SEM and HRTEM demonstrate that these nanorods are hexagonal GaN and possess a rough morphology with a diameter ranging from 200 nm to 500 nm and a length less than 10 μm, the growth mechanism of crystalline GaN nanorods is discussed briefly.     

Fabrication of GaN nanowires on Pd-coated sapphire substrates by magnetron sputtering technique

Large-scale GaN nanowires were successfully synthesized through ammoniating Ga₂O₃/Pd films sputtered on the sapphire(001) substrates. X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, photoluminescence and Raman spectrum were used to characterize the specimens. The results demonstrate that nanowires are single crystal with hexagonal wurtzite structure and have good optical properties. Raman scattering appears broadened and asymmetric compared with those of bulk GaN due to its polycrystalline nature. In addition, the growth mechanism of GaN nanowires is briefly discussed.     

Fabrication and structure properties of GaN nanowires by ammoniating Ga2O3 films

The GaN nanowires were successfully synthesized on Si(111) substrates by ammoniating the Ga₂O₃/ZnO films at 900 °C. The structure and morphology of the as-prepared GaN nanowires were studied by X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), scanning electron microscopy (SEM) and field-emission transmission electron microscopy (FETEM). The results show that the single-crystal GaN nanowires have a hexagonal wurtzite structure with lengths of about several micrometers and diameters ranging from 30 nm to 120 nm, which are conducive to the application of nanodevices. Finally, the growth mechanism is also briefly discussed.