Effect of Additives on the Electromechanical Properties of Pb(Zr,Ti)O3–Pb(Y2/3W1/3)O3 Ceramics

Dielectric and piezoelectric properties of 0.02Pb(Y_2/3W_1/3)O₃ 0.98Pb(Zr0.52Ti0.48)O3 ceramics doped with additives (Nb₂O₅, La₂O₃, MnO₂, and Fe₂O₃) were investigated. The grain sizes of these ceramics decreased with increasing amounts of additives. For additions of MnO₂ and Fe₂O₃, dielectric losses decreased, while for Nb₂O₅ and La₂O₃, these values increased. The maximum values of the mechanical quality factor Q_m were found to be 956 and 975 for additions of 0.9 wt% Fe₂O₃ and 0.7 wt% MnO₂, respectively, but donor dopants (Nb₂O₅ and La₂O₃) did not change the values of Q_m . On the other hand, the piezoelectric constant d₃₃ and the electromechanical coupling factor k_p decreased with additions of MnO₂ and Fe₂O₃, but improved with additions of Nb₂O₅ and La₂O₃.     

Investigation on the Microstructure and Dielectric Properties of BaTiO3–Nb2O5–Fe2O3 Materials Doped with La2O3

The influence of La₂O₃ doped on the microstructure and dielectric properties, including the phase structure, temperature dependence of permittivity, and the hysteresis loop of BaTiO₃–Nb₂O₅–Fe₂O₃ (BTNF) materials has been investigated in X-ray diffraction, SEM, and LCR analyzer, respectively. Experiments revealed that incorporation of proper content of La₂O₃ basically soluted in the lattice of BaTiO₃ and can control the grain-growth, reduce the dielectric loss of the BTNF materials. The development of microstructure promoted by the additives can result in the improvement of the dielectric constant. When the doping concentration of La₂O₃ was 3.846 wt%, the relative dielectric constant of the sample sintered at 1280°C only for 2 h could reach 4308, and improve the dielectric-temperature characteristics markedly. As a result, a novel Y5P can be achieved in the BTNF ceramics, which is very promising for practical use in Y5P multilayer ceramic capacitors.     

Sintering and Microwave Dielectric Properties of the LiNb0.63Ti0.4625O3 Ceramics with the B2O3–SiO2 Liquid-Phase Additives

The effect of B₂O₃–SiO₂ liquid-phase additives on the sintering, microstructure, and microwave dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics was investigated. It was found that the sintering temperature could be lowered easily, and the densification and dielectric properties of LiNb_0.63Ti_0.4625O₃ ceramics could be greatly improved by adding a small amount of B₂O₃–SiO₂ solution additives. No secondary phase was observed for the ceramics with B₂O₃–SiO₂ additives. With the addition of 0.10 wt% B₂O₃–SiO₂, the ceramics sintered at 900°C showed favorable microwave dielectric properties with ɛ_r=71.7, Q × f =4950 GHz, and τ_f=−2.1 ppm/°C. The energy dispersive spectra analysis showed an excellent co-firing interfacial behavior between the LiNb_0.63Ti_0.4625O₃ ceramic and the Ag electrode. It indicated that LiNb_0.63Ti_0.4625O₃ ceramics with B₂O₃–SiO₂ solution additives have a number of potential applications on passive integrated devices based on the low-temperature co-fired ceramics technology.     

Microwave Dielectric Properties of La5CrTi3O15 and La4MCrTi3O15 (M=Pr, Nd, and Sm) Ceramics

The La₅CrTi₃O₁₅ and La₄MCrTi₃O₁₅ (M=Pr, Nd, and Sm) microwave dielectric ceramics were prepared by the conventional solid-state ceramic route. The structure and microstructure of the ceramics were studied by X-ray diffraction and scanning electron microscopy methods. The dielectric properties of the ceramics were measured in the microwave frequency region using a network analyzer by the resonance method. The ceramics show a dielectric constant (ɛ_r) in the range of 37 to 39.5, a quality factor ( Q _u× f _o) 17,300 to 34,000 GHz, and a temperature coefficient of resonant frequency (τ_f) in the range from −22 to −38 ppm/°C.     

The System La2O3— TiO2; Phase Equilibria and Electrical Properties

Phase relations at liquidus temperatures in the system La₂O₃-TiO₂ were studied in air. The existence of two previously unreported compounds, La₂O₃. TiO₂ and 2La₂O₃-TiO₂, is postulated on the basis of X-ray and microscopic examination of crystalline samples, and in the case of La₂O₃.-TiO₂, on a maximum in the liquidus curve at that composition. Quenched liquids of the primary-phase field of rutile were found to be semiconducting. This property was related to oxygen loss from both liquid and crystalline phases and is discussed in the light of weight loss experiments, microscopic examination of quenched samples, and information obtained from the literature. Dielectric constant and loss factor of the compounds La₂O₃-TiO₂, La₂O₃-2TiO₂, and 2La₂O₃-9TiO₂ are reported at 1 Mc over the temperature range 25° to 500°C.     

Effects of B2O3 Addition on the Dielectric and Ferroelectric Properties of Ba0.7Sr0.3TiO3 Ceramics

The effects of B₂O₃ addition on the sintering behavior and the dielectric and ferroelectric properties of Ba_0.7Sr_0.3TiO₃ (BST) ceramics were investigated. The dielectric and ferroelectric properties of a BST sample with 0.5 wt% B₂O₃ sintered at <1150°C were as good as those of undoped BST sintered at 1350°C, and the dielectric loss was better. When >1.0 wt% B₂O₃ was added to BST, the overdoped B₂O₃ did not form a liquid phase or volatilize; it remained in the samples and formed a secondary phase that lowered the sintering behavior and the dielectric and ferroelectric properties of the BST.     

Effect of Nb2O5/ZnO Addition on Microwave Properties of (Zr0.8Sn0.2)TiO4 Ceramics

The effects of Nb₂O₅ and ZnO addition on the dielectric properties, especially the quality factor, of (Zr_0.8Sn_0.2)TiO₄ (ZST) ceramics were investigated in terms of the sintered density acquired by the zinc. For ZST ceramics with 2 mol% added ZnO, the relative density of the samples decreased with >0.5 mol% addition of Nb₂O₅. On the other hand, for samples with 6 mol% added ZnO, the relative density remained >97%, even when the amount of Nb₂O₅ was increased to 2.0 mol%. When >0.5 mol% Nb₂O₅ was added, both the quality factor and the dielectric constant exhibited similar trends with sintered density. The ZST ceramics with 6 mol% added ZnO, especially, still manifested a quality factor >40 000 and a dielectric constant of 37, even when the amount of Nb₂O₅ was increased, values that are not explainable by the previously suggested electronic defect model.     

Microwave Dielectrics in the (La1/2Na1/2)TiO3–Ca(Fe1/2Nb1/2)O3 System

Dielectric properties of the system (1 − x)(La_1/2Na_1/2)TiO₃– _x Ca(Fe_1/2Nb_1/2)O₃, where 0.4 # x # 0.6, have been investigated at microwave frequencies. The temperature coefficient of resonant frequency (τ_f), nearly 0 ppm/°C, was realized at x = 0.58. These ceramics had perovskite structure and showed relatively low dielectric losses. A new dielectric material applicable to microwave devices having Q · f of 12000–14000 GHz and a dielectric constant (ε_r) of 59–60 has been obtained at 1300–1350°C for 5–15 h sintering.     

Grain Growth of ZnO during Bi2O3 Liquid-Phase Sintering

Grain growth of ZnO during the liquid-phase sintering of binary ZnO–Bi₂O₃ ceramics has been studied for Bi₂O₃ contents from 3 to 12 wt% and sintering from 900° to 1400°C. The results are considered in combination with previously published studies of ZnO grain growth in the ZnO–Bi₂O₃ system. For the Bi₂O₃ contents of the present study, the rate of ZnO grain growth is found to decrease with increasing Bi₂O₃. Activation analysis, when combined with the results of similar analyses of the previous studies, reveals a change in the rate-controlling mechanism for ZnO grain growth. Following a low-Bi₂O₃-content region of nearly constant activation energy values of about 150 kJ/mol, further Bi₂O₃ additions cause an increase of the activation energy to about 270 kJ/mol. consistent with accepted models of liquid-phase sintering, it is concluded that the rate-controlling mechanism of ZnO grain growth during liquid-phase sintering in the presence of Bi₂O₃ changes from one of a phase-boundary reaction at low Bi₂O₃ levels to one of diffusion through the liquid phase at about the 5 to 6 wt% Bi₂O₃ level and above.     

Microwave Dielectric Properties of Low-Fired Ba5Nb4O15

The effect of B₂O₃ on the sintering temperature and microwave dielectric properties of Ba₅Nb₄O₁₅ has been investigated using X-ray powder diffraction, scanning electron microscopy, and a network analyzer. Interactions between Ba₅Nb₄O₁₅ and B₂O₃ led to formation of second phases, BaNb₂O₆ and BaB₂O₄. The addition of B₂O₃ to Ba₅Nb₄O₁₅ resulted in lowering the sintering temperature from 1400° to 925°C. Low-fired Ba₅Nb₄O₁₅ could be interpreted by measuring changes in the quality factor ( Q × f ), the relative dielectric constant (ɛ_r), and the temperature coefficient of resonant frequency (τ_f) as a function of B₂O₃ additions. More importantly, the formation of BaNb₂O₆ provided temperature compensation. The microwave dielectric properties of low-fired Ba₅Nb₄O₁₅ had good dielectric properties: Q × f = 18700 GHz, ɛ_r= 39, and τ_f= 0 ppm/°C.     

Synthesis of BaCu(B2O5) Ceramics and their Effect on the Sintering Temperature and Microwave Dielectric Properties of Ba(Zn1/3Nb2/3)O3 Ceramics

BaCu(B₂O₅) ceramics were synthesized and their microwave dielectric properties were investigated. BaCu(B₂O₅) phase was formed at 700°C and melted above 850°C. The BaCu(B₂O₅) ceramic sintered at 810°C had a dielectric constant (ɛ_r) of 7.4, a quality factor ( Q × f ) of 50 000 GHz and a temperature coefficient of resonance frequency (τ_f) of −32 ppm/°C. As the BaCu(B₂O₅) ceramic had a low melting temperature and good microwave dielectric properties, it can be used as a low-temperature sintering aid for microwave dielectric materials for low temperature co-fired ceramic application. When BaCu(B₂O₅) was added to the Ba(Zn_1/3Nb_2/3)O₃ (BZN) ceramic, BZN ceramics were well sintered even at 850°C. BaCu(B₂O₅) existed as a liquid phase during the sintering and assisted the densification of the BZN ceramic. Good microwave dielectric properties of Q × f =16 000 GHz, ɛ_r=35, and τ_f=22.1 ppm/°C were obtained for the BZN+6.0 mol% BaCu(B₂O₅) ceramic sintered at 875°C for 2 h.     

Microwave Dielectric Properties and Chemical Resistance of Low-Temperature-Sintered CaZrB2O6 Ceramics

Dolomite-type borate ceramics consisting of CaZrB₂O₆ were synthesized via a conventional solid-state reaction route; low-temperature sintering was explored using Bi₂O₃–CuO additives of 1–7 wt% for low-temperature co-fired ceramics applications. For several sintering temperatures, the microwave dielectric properties and chemical resistance of the ceramics were investigated. The CaZrB₂O₆ ceramics with 3 wt% Bi₂O₃–CuO addition could be sintered below 925°C, and the microwave dielectric properties of the low-temperature samples were ɛ_r=10.55, Q × f =87,350 GHz, and τ_f=+2 ppm/°C. The chemical resistance test result showed that both CaZrB₂O₆- and Bi₂O₃–CuO-added CaZrB₂O₆ ceramics were durable in basic solution but were degraded in acid solution.     

Glass-Free Zn2Te3O8 Microwave Ceramic for LTCC Applications

A Zn₂Te₃O₈ ceramic was investigated as a promising dielectric material for low-temperature co-fired ceramics (LTCC) applications. The Zn₂Te₃O₈ ceramic was synthesized using the solid-state reaction method by sintering in the temperature range 540°–600°C. The structure and microstructure of the compounds were investigated using X-ray diffraction (XRD) and scanning electron microscopy methods. The dielectric properties of the ceramics were studied in the frequency range 4–6 GHz. The Zn₂Te₃O₈ ceramic has a dielectric constant (ɛ_r) of 16.2, a quality factor ( Q _u× f ) of 66 000 at 4.97 GHz, and a temperature coefficient of resonant frequency (τ_f) of −60 ppm/°C, respectively. Addition of 4 wt% TiO₂ improved the τ_f to −8.7 ppm/°C with an ɛ_r of 19.3 and a Q _u× f of 27 000 at 5.14 GHz when sintered at 650°C. The chemical reactivity of the Zn₂Te₃O₈ ceramic with Ag and Al metal electrodes was also investigated.     

Microstructure and Dielectric Properties of a LaAlO3–TiO2 Diffusion Couple

Near-field scanning microwave microscopy was applied to investigate the dielectric properties and microstructure in a polycrystalline LaAlO₃–TiO₂ diffusion couple, which included three regions containing different phases and microstructures. Relatively low (La₂Ti₄Al₁₈O₃₈), high (α-La_2/3TiO₃), and intermediate (La₄Ti₉O₂₄) dielectric constant phases were distinguished at the inter-diffusion interface in optical, backscattered electron scanning electron microscopy, and scanning microwave microscopy (SMM) images. The relative ranking of dielectric constants based on SMM examination was as follows: TiO₂>α-La_2/3TiO₃>La₄Ti₉O₂₄>LaAlO₃>La₂Ti₄Al₁₈O₃₈. La_2/3TiO₃ and LaAlO₃ will form solid solutions in the LaAlO₃-rich region. The reaction paths leading to phase development are discussed.     

Microwave Dielectric Properties of Li2TiO3 Ceramics Doped with ZnO–B2O3 Frit

A type of new low sintering temperature ceramic, Li₂TiO₃ ceramic, has been found. Although it is difficult for the Li₂TiO₃ compound to be sintered compactly at temperatures above 1000°C for the volatilization of Li₂O, dense Li₂TiO₃ ceramics were obtained by conventional solid-state reaction method at the sintering temperature of 900°C with the addition of ZnO–B₂O₃ frit. The sintering behavior and microwave dielectric properties of Li₂TiO₃ ceramics with less ZnO–B₂O₃ frit (≤3.0 wt%) doping were investigated. The addition of ZnO–B₂O₃ frit can lower the sintering temperature of the Li₂TiO₃ ceramics, but it does not apparently degrade the microwave dielectric properties of the Li₂TiO₃ ceramics. Typically, the good microwave dielectric properties of ɛ_r=23.06, Q × f =32 275 GHz, τ_f = 35.79 ppm/°C were obtained for 2.5 wt% ZnO–B₂O₃ frit-doped Li₂TiO₃ ceramics sintered at 900°C for 2 h. The porosity was 0.08%. The Li₂TiO₃ ceramic system may be a promising candidate for low-temperature cofired ceramics applications.     

Microwave Dielectric Properties of 5Li2O–0.583Nb2O5–3.248TiO2 Ceramics with V2O5

The effects of V₂O₅ addition on the sintering behavior, microstructure, and the microwave dielectric properties of 5Li₂O–0.583Nb₂O₅–3.248TiO₂ (LNT) ceramics have been investigated. With addition of low-level doping of V₂O₅ (≤2 wt%), the sintering temperature of the LNT ceramics could be lowered down to around 920°C due to the liquid phase effect. A secondary phase was observed at the level of 2 wt% V₂O₅ addition. The addition of V₂O₅ does not induce much degradation in the microwave dielectric properties but lowers the τ_f value to near zero. Typically, the excellent microwave dielectric properties of ɛ_r=21.5, Q × f =32 938 GHz, and τ_f=6.1 ppm/°C could be obtained for the 1 wt% V₂O₅-doped sample sintered at 920°C, which is promising for application of the multilayer microwave devices using Ag as an internal electrode.     

Influence of V2O5 Additions to 5Li2O–1Nb2O5–5TiO2 Ceramics on Sintering Temperature and Microwave Dielectric Properties

The effects of the addition of V₂O₅ on the sintering behavior, microstructure, and microwave dielectric properties of 5Li₂O–1Nb₂O₅–5TiO₂ (LNT) ceramics have been investigated. With low-level doping of V₂O₅ (≤3 wt%), the microstructure of the LNT ceramic changed from a special two-level intergrowth structure into a two-phase composite structure with separate grains. And the sintering temperature of the LNT ceramics could be lowered to around 900°C by adding a small amount of V₂O₅ without much degradation in microwave dielectric properties. Typically, better microwave dielectric properties of ɛ_r=41.7, Q × f =7820 GHz, and τ _f =45 ppm/°C could be obtained for the 1 wt% V₂O₅-doped ceramics sintered at 900°C.     

Grain Growth of ZnO in ZnO-Bl2O3 Ceramics with Ai2O3 Additions

Grain growth of ZnO during liquid-phase sintering of a ZnO-6 wt% Bi₂O₃ ceramic was investigated for A1₂O₃ additions from 0.10 to 0.80 wt%. Sintering in air for 0.5 to 4 h at 900° to 1400°C was studied. The AI₂O₃ reacted with the ZnO to form ZnAl₂O₄ spinel, which reduced the rate of ZnO grain growth. The ZnO grain-growth exponent was determined to be 4 and the activation energy for ZnO grain growth was estimated to be 400 kJ/mol. These values were compared with the activation parameters for ZnO grain growth in other ceramic systems. It was confirmed that the reduced ZnO grain growth was a result of ZnAl₂O₄ spinel particles pinning the ZnO grain boundaries and reducing their mobility, which explained the grain-growth exponent of 4. It was concluded that the 400 kJ/mol activation energy was related to the transport of the ZnAl₂O₄ spinel particles, most probably controlled by the diffusion of O^2- in the ZnAl₂O₄ spinel structure.     

Piezoelectric Properties of Pb(Mg1/3Nb2/3)O3 PbTiO3 -PbZrO3 Ceramics Modified with Certain Additives

Effects of additives on the piezoelectric properties of Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃-PbZrO₃ ceramics in a perovskite-type structure are described. The tetragonality of Pb(Mg_1/3Nb_2/3)_0.375-Ti_0.375Zr_0.25O₃ ceramics increased with the addition of NiO, Cr₂O₃, or Fe₂O₃ but decreased with the addition of MnO₂ or CoO. The dielectric and piezoelectric properties of the base composition were improved markedly through selection of additives in proper amounts. Addition of NiO yielded a high dielectric constant and planar coupling coefficient for compositions at the morphotropic transition boundary. High mechanical Q -factors and low electrical dissipation factors were obtained by addition of MnO₂. Addition of both NiO and MnO₂ produced a mechanical Q -factor of 2051 and a planar coupling coefficient of 0.553. The resonant frequency of Pb(Mg_1/2Nb_2/3)_0.4375Ti_0.4375 zr_0.125O₃ containing MnO₂ had very low temperature and time dependence. The microstructure indicated that ceramics with a high mechanical Q -factor had a fine, uniform grain structure. Addition of Cr₂O₃ retarded grain growth and addition of MnO₂, NiO, CoO, or Fe₂O₃ promoted grain growth in the ternary system.     

Dielectric Constant and Optical Reflectance of Ceramic Filler-Added BaO–ZnO–B2O3–P2O5 Glass Composites

This study examined the influence of the addition of ceramic fillers (up to 20 wt% of TiO₂, Al₂O₃, and ZnO, respectively) to a BaO–ZnO–B₂O₃–P₂O₅ glass matrix on the dielectric and optical properties with the aim of using this material as the barrier ribs in plasma display panels. The modification of the dielectric constant by the fillers was related to the formation of secondary phases, the changes in the glass composition by the partial dissolution of the fillers, and the presence of pores. The reflectance of the composites ranged from 60% to 80% with the addition of 20 wt% filler.