Proton-Conductive Membranes Doped with Orthophosphoric Acid Based on Inorganic–Organic Hybrid Materials

A series of proton-conductive inorganic–organic hybrid membranes doped with phosphoric acid (H₃PO₄) have been prepared by the sol–gel process with 3-glycidoxypropyltrimethoxysilane (GPTMS), 3-aminopropyltriethoxysilane (APTES), and tetraethoxysilane (TEOS) as precursors. High proton conductivity of 3.0 × 10⁻³ S/cm with a composition of 50TEOS–30GPTMS–20APTES–50H₃PO₄ was obtained at 120°C under 50% relative humidity (RH). The differential thermal analysis curve showed that thermal stability of membrane is significantly enhanced by the presence of an SiO₂ framework up to 250°C. X-ray ray diffraction revealed that the gels were amorphous. Infrared spectra showed a good complexation of H₃PO₄ in the matrix. The porous hybrid membrane, characterized by scanning electron microscopy, shows humidity-dependent conduction, and the conductivity under 75% relative humidity was significantly improved by addition of APTES due to the increase in the concentration of the defective site in the hybrid matrix.     

Electrical Charge Transport in Single-Crystal CaWO4

A combination of ac and dc electrical conductivity measurements was used to characterize the charge transport in single crystals of CaW0₄ which were equilibrated with H₂-H₂O-Ar gas mixtures. Measurements were made from 900° to 1300°C and at P_H2O/P_H2 ratios from 0.02 to 3.0. The ac conductivity at 1000°C varied from 51.4×10⁻⁶ to 5.89×10⁻⁶ mho/cm for P_H2O/P_H2=0.02 and 2.0, respectively; the dc conductivity changed from 51.0±10⁻⁶ to 5.42×10⁻⁶ mho/cm under the same experimental conditions. The partial logarithmic derivative of dc conductivity with respect to P_H2O/P_H2 was −1/2 between 1000° and 1300°C. The results may be described by a paired-defect model of oxygen vacancies and oxygen interstitials (majority defects and minority electrons).     

Characterization of Material for Low-Temperature Sintered Multilayer Ceramic Substrates

The sintering temperature of multilayer ceramic substrates must decrease to 1000° or below to avoid melting the conductors (Pd-Ag, Au, or Cu) during sintering. In this study, SiO₂, CaO, B₂O₃, and MgO were used as additives to Al₂O₃ to decrease the firing temperature by liquid-phase sintering. Compositions with 18.0 and 22.5 wt% B₂O₃ were sintered at around 1000° in an air atmosphere to yield dense ceramics with good properties: relative dielectric contant between 6 to 7 (1 MHz), tan δ≤× 3 × 10⁻⁴ (1 MHz), insulating resistivity > 10¹⁴ω cm, coefficient of thermal expansion ∼ 7.0 × 10⁻⁶/°, and thermal conductivity ∼ 4.1 W/(m · K).     

Electrical Conduction in Single-Crystal and Polycrystalline Al2O3 at High Temperatures

The electrical conductivity and ion/electron transference numbers in Al₃O₃ were determined in a sample configuration designed to eliminate influences of surface and gas-phase conduction on the bulk behavior. With decreasing O₂ partial pressure over single-crystal Al₂O₃ at 1000° to 1650°C, the conductivity decreased, then remained constant, and finally increased when strongly reducing atmospheres were attained. The intermediate flat region became dominant at the lower temperatures. The emf measurements showed predominantly ionic conduction in the flat region; the electronic conduction state is exhibited in the branches of both ends. In pure O₂ (1 atm) the conductivity above 1400°C was σ≃3×10³ exp (–80 kcal/ RT ) Ω⁻¹ cm⁻¹, which corresponds to electronic conductivity. Below 1400°C, the activation energy was <57 kcal, corresponding to an extrinsic ionic condition. Polycrystalline samples of both undoped hot-pressed Al₂O₃ and MgO-doped Al₂O₃ showed significantly higher conductivity because of additional electronic conduction in the grain boundaries. The gas-phase conduction above 1200°C increased drastically with decreasing O₂ partial pressure (below 10⁻¹⁰ atm).     

Electrical Conduction in Nano-Structured La0.9Sr0.1Al0.85Co0.05Mg0.1O3 Perovskite Oxide

Nanocrystalline La_0.9Sr_0.1Al_0.85Co_0.05Mg_0.1O₃ oxide powder was synthesized by a citrate–nitrate auto-ignition process and characterized by thermal analysis, X-ray diffraction, and impedance spectroscopy measurements. Nanocrystalline (50–100 nm) powder with perovskite structure could be produced at 900°C by this process. The powder could be sintered to a density more than 96% of the theoretical density at 1550°C. Impedance measurements on the sintered samples unequivocally established the potential of this process in developing nanostructured lanthanum aluminate-based oxides. The sintered La_0.9Sr_0.1Al_0.85Co_0.05Mg_0.1O₃ sample exhibited a conductivity of 2.40 × 10⁻² S/cm in air at 1000°C compared with 4.9 × 10⁻³ S/cm exhibited by La_0.9Sr_0.1Al_0.85Mg_0.15O₃.     

Spark Plasma Sintered Silicon Nitride Ceramics with High Thermal Conductivity Using MgSiN2 as Additives

Silicon nitride ceramics were prepared by spark plasma sintering (SPS) at temperatures of 1450°–1600°C for 3–12 min, using α-Si₃N₄ powders as raw materials and MgSiN₂ as sintering additives. Almost full density of the sample was achieved after sintering at 1450°C for 6 min, while there was about 80 wt%α-Si₃N₄ phase left in the sintered material. α-Si₃N₄ was completely transformed to β-Si₃N₄ after sintering at 1500°C for 12 min. The thermal conductivity of sintered materials increased with increasing sintering temperature or holding time. Thermal conductivity of 100 W·(m·K)⁻¹ was achieved after sintering at 1600°C for 12 min. The results imply that SPS is an effective and fast method to fabricate β-Si₃N₄ ceramics with high thermal conductivity when appropriate additives are used.     

Vapor Pressures of Simple Silicate Glass Melts

Partial and total vapor pressures over Na₂O.3SiO₂ anhd Rb₂O.3SiO_z melts were determined at 1150° to 1300°C with the Knudsen-effusion method. A Pt Knudsen cell was placed on a microbalance so that the weight loss due to effusion from the Knudsen hole could be recorded continuously. The specific vaporization rates are between ∼3.10⁻⁶ and 3.10⁻⁴ gcm⁻² s⁻¹; the corresponding vapor pressures are between ∼3.10⁻² and 3 Pa.     

Oxidation State of Chromium in CaO–Al2O3–CrOx–SiO2 Melts under Strongly Reducing Conditions at 1500°C

Equilibrium ratios Cr²⁺/Cr³⁺ of chromium oxide dissolved in CaO–chromium oxide–Al₂O₃–SiO₂ melts have been determined by analysis of samples equilibrated at 1500°C under strongly reducing conditions ( p _o2= 10^−9.56 to 10^−12.50 atm). The majority of the chromium is divalent (Cr²⁺) under these conditions and Cr²⁺/Cr³⁺ ratios at given constant oxygen pressures decrease with increasing basicity of the melts, expressed as CaO/SiO₂ ratios. In addition, Cr²⁺/Cr³⁺ ratios, at a given CaO/SiO₂ ratio, are relatively unaffected by the amount of Al₂O₃ present.     

Effects of M3+ Ions on the Conductivity of Glasses and Glass-Ceramics in the System Li2O—M2O3—GeO2—P2O5 (M = Al, Ga, Y, Dy, Gd, and La)

Glasses with compositions Li_1.2M_0.2Ge_1.8(PO₄)₃ (M = Al, Ga, Y, Gd, Dy, and La) were prepared and converted to glass-ceramics by heat treatment. The effects of the M³⁺ ions on the conductivity of the glasses and glass-ceramics were studied. The main phase present in the glass-ceramics was the conductive phase LiGe₂(PO₄)₃. Al³⁺ and Ga³⁺ ions entered the LiGe₂(PO₄)₃ structure by replacing Ge⁴⁺ ions, but lanthanide ions did not. The glass-ceramics exhibited much higher conductivity than the glasses. With increased ionic radius of the M³⁺ ions, the conductivity remained almost unchanged at ∼3 × 10⁻¹² S/cm for the glasses, but it decreased from 1.5 × 10⁻⁵ to 8 × 10⁻⁹ S/cm for the glass-ceramics at room temperature. The higher conductivity for Al³⁺- and Ga³⁺-containing glass-ceramics was suggested to result from the substitutions of Al³⁺ and Ga³⁺ ions for Ge⁴⁺ ions in the LiGe₂(PO₄)₃ structure.     

In Situ Reaction Synthesis, Electrical and Thermal, and Mechanical Properties of Nb4AlC3

In this work, a bulk Nb₄AlC₃ ceramic was prepared by an in situ reaction/hot pressing method using Nb, Al, and C as the starting materials. The reaction path, microstructure, physical, and mechanical properties of Nb₄AlC₃ were systematically investigated. The thermal expansion coefficient was determined as 7.2 × 10⁻⁶ K⁻¹ in the temperature range of 200°–1100°C. The thermal conductivity of Nb₄AlC₃ increased from 13.5 W·(m·K)⁻¹ at room temperature to 21.2 W·(m·K)⁻¹ at 1227°C, and the electrical conductivity decreased from 3.35 × 10⁶ to 1.13 × 10⁶Ω⁻¹·m⁻¹ in a temperature range of 5–300 K. Nb₄AlC₃ possessed a low hardness of 2.6 GPa, high flexural strength of 346 MPa, and high fracture toughness of 7.1 MPa·m^1/2. Most significantly, Nb₄AlC₃ could retain high modulus and strength up to very high temperatures. The Young's modulus at 1580°C was 241 GPa (79% of that at room temperature), and the flexural strength could retain the ambient strength value without any degradation up to the maximum measured temperature of 1400°C.     

Proton Conductivity in Zr4+-Ion-Doped P2O5–SiO2 Porous Glasses

The effect of zirconium ions on glass structure and proton conductivity was investigated for sol-gel-derived P₂O₅–SiO₂ glasses. Porous glasses were prepared through hydrolysis of PO(OCH₃)₃, Zr(OC₄H₉)₄, and Si(OC₂H₅)₄. Chemical bonding of the P⁵⁺ ions was characterized using ³¹P-NMR spectra. The phosphorous ions, occurring as PO(OH)₃ in the ZrO₂-free glass, were polymerized with one or two bridging oxygen ions per PO₄ unit with increased ZrO₂ content. The chemical stability of these glasses was increased significantly on the addition of ZrO₂, but the conductivity gradually decreased from 26 to 12 mS/cm at room temperature for 10P₂O₅·7ZrO₂·83SiO₂ glass. A fuel cell was constructed using 10P₂O₅·5ZrO₂·85SiO₂ glass as the electrolyte; a power of ∼4.5 mW/cm² was attained.     

Electrical Properties and Defect Structure of HfO2

The defect structure of high-purity, polycrystalline HfO₂ was investigated by measuring the oxygen partial pressure dependence of the electrical conductivity and the sample weight. From 1000° to 1500°C and above oxygen partial pressures of 10 ⁻⁶, the conductivity is electronic and proportional to p o₂^1/5. The predominant defect is completely ionized hafnium vacancies. At lower oxygen partial pressures a broad shallow minimum in the lower temperature conductivity isotherms indicates the presence of an oxygen pressure independent source of electronic charge carriers. By combining the weight change and conductivity data, mobility values were found to vary from 1.6 × 10⁻³ to 3 × 10⁻⁴ cm²/V-sec. The activation energies for the hole mobilities were calculated to be 0.2 ev above 1300° C and 0.7 ev below this temperature.     

Fabrication and Characterization of Pyroelectric Ba0.8Sr0.2TiO3 Thin Films by a Sol-Gel Process

A sol-gel process was used to prepare pyroelectric Ba_0.8Sr_0.2TiO₃ thin films with large columnar grains (100–200 nm in diameter) on Pt/Ti/SiO₂/Si substrates, via using a 0.05 M solution precursor. The relationship between dielectric constant and temperature (ɛ_r- T ) showed two distinctive phase transitions in the Ba_0.8Sr_0.2TiO₃ thin films. Both the remnant polarization and the coercive field decreased as the temperature increased from −73°C to 40°C. Its low dissipation factor (tan δ= 2.6%) and high pyroelectric coefficient ( p = 4.6 × 10⁻⁴ C·(m²·K)⁻¹ at 33°C), together with its good insulating properties, made the prepared Ba_0.8Sr_0.2TiO₃ thin films promising for use in uncooled infrared detectors and thermal imaging applications.     

Extended X-ray Absorption Fine Structure (EXAFS) Study on the local Environment around Copper in Low Thermal Expansion Copper Aluminosilicate Glasses

The local environment around copper in the Cu₂O·Al₂O₃·4SiO₃ and CuO·Al₂O₃·4SiO₂ glasses was investigated using the extended X-ray absorption fine structure (EXAFS) technique. It has been found that each Cu(I) in the former glass is coordinated to two oxygens through covalent Cu(I)-O bonds. This is the primary reason for its low thermal expansion coefficient (∼10 × 10⁻⁷ K⁻¹). In the latter glass, which was made by heating the former glass at 600°C in air, each Cu(II) is coordinated to four oxygens and the bonds are ionic in character, contributing to the increase in the thermal expansion coefficient to ∼30 × 10⁻⁷ K⁻¹.     

Effect of Hydrogen-Water Atmospheres on Corrosion and Flexural Strength of Sintered α-Silicon Carbide

Sintered α-SiC was exposed for 10 h to H₂ containing various partial pressures of H₂O ( P _H2O from 5×10⁻⁶ to 2×10⁻² atm; 1 atm≅10⁵ Pa) at 1300° and 1400°C. Weight loss, surface morphology, and room-temperature flexural strength were strongly dependent on P _H2O. The strength of the SiC was not significantly affected by exposure to dry H₂ at a P _H2O of 5×10⁻⁶ atm; and following exposure at P _H2O >5×10⁻³ atm, the strength was even higher than that of the as-received material. The increase in strength is thought to be the result of crack blunting associated with SiO₂ formation at crack tips. However, after exposure in an intermediate range of water vapor pressures (1×10⁻⁵< P _H2O <1×10⁻³ atm), significant decreases in strength were observed. At a P _H2O of about 1×10⁻⁴ atm, the flexural strength decreased approximately 30% and 50% after exposure at 1300° and 1400°C, respectively. The decrease in strength is attributed to surface defects caused by corrosion in the form of grain-boundary attack and the formation of pits. The rates of weight loss and microstructural changes on the exposed surfaces correlated well with the observed strength changes.     

Synthesis of Blue-Emitting CaMgSi2O6:Eu2+ Phosphor Using an Electrostatic Self-Assembly Deposition Method

Eu²⁺-doped CaMgSi₂O₆ phosphor was prepared by depositing mixed hydroxides of Ca, Mg, and Eu over spherical SiO₂ particles (300 nm) pre-coated with polycations (polyethyleneimine), followed by calcination at 1200°C in a reducing atmosphere. The prepared phosphor showed intense blue emission, ascribable to the 4f⁷-4f⁶5d transition of Eu²⁺. In contrast, the luminescence intensity of the phosphor was considerably decreased when prepared without polycations. It was suggested that negatively charged hydroxides are deposited on positively charged SiO₂ surfaces pre-coated with polycations through electrostatic self-assembly interaction. On calcination, the hydroxide shells react with the SiO₂ cores to produce Eu²⁺:CaMgSi₂O₆.     

Novel Synthesis of Mullite Powder with High Surface Area

Boehmite (AlO(OH)) solid-solution gel, which yields stoichiometric mullite (3Al₂O₃2SiO₂) at high temperatures, has been prepared by the hydrazine method. The formation process leading to 3Al₂O₃2SiO₂ is discussed. The as-prepared powder and powders heated below 1200°C consist of very fine particles showing needlelike morphology, whereas the particles of mullite powder show thin prismatic morphology. The mullite powder after heating at 1300°C has a high surface area (87 m²/g).     

Determination of CaO–SiO2–MgO–Al2O3–CrOx Liquidus

In this work, the liquidus of synthetic CaO–SiO₂–MgO–Al₂O₃–CrO _x slags is evaluated in the industrially relevant compositional domain. Equilibrium experiments are carried out at 1500°C and partial oxygen pressure ( p _O2) 10^−11.04 atm, and at 1600°C and p _O2=10^−10.16 and 10^−9.36 atm. The studied basicities (CaO/SiO₂) are 1.2 and 0.5. Al₂O₃ levels range from 0 to 30 wt%. Oversaturated liquid is sampled and phase relations are measured with quantitative electron probe microanalysis–wavelength dispersive spectroscopy (EPMA–WDS). The results are compared with the commercially available FactSage thermodynamic databases. Qualitative agreement is always obtained. Also a good quantitative agreement is found at the higher basicity, especially for the spinel liquidus. A minor but systematic deviation can be observed for the eskolaite liquidus. At the lower basicity, the calculated phase diagram deviates strongly from the experimental results, probably due to missing ternary interactions in the database.     

Thermal Expansion of Polycrystalline Ti3SiC2 in the 25°–1400°C Temperature Range

We measured the volume thermal expansion of Ti₃SiC₂ from 25° to 1400°C using high-temperature X-ray diffraction using a resistive heated cell. A piece of molybdenum foil with a 250 μm hole contained the sample material (Ti₃SiC₂+Pt). Thermal expansion of the polycrystalline sample was measured under a constant argon flow to prevent oxidation of Ti₃SiC₂ and the molybdenum heater. From the lattice parameters of platinum (internal standard), we calculated the temperature by using thermal expansion data published in the literature. The molar volume change of Ti₃SiC₂ as a function of temperature in °C is given by: V _M (cm³/mol)=43.20 (2)+9.0 (5) × 10⁻⁴ T +1.8(4) × 10⁻⁷ T ². The temperature variation of the volumetric thermal expansion coefficient is given by: α_v (°C⁻¹)=2.095 (1) × 10⁻⁵+7.700 (1) × 10⁻⁹ T . Furthermore, the results indicate that the thermal expansion anisotropy of Ti₃SiC₂ is quite mild in accordance with previous work.