Polarization contrast in reflection near-field optical microscopy with uncoated fibre tips

Using cross-hatched, patterned semiconductor surfaces and round 20-nm-thick gold pads on semiconductor wafers, we investigate the imaging characteristics of a reflection near-field optical microscope with an uncoated fibre tip for different polarization configurations and light wavelengths. It is shown that cross-polarized detection allows one to effectively suppress far-field components in the detected signal and to realize imaging of optical contrast on the sub-wavelength scale. The sensitivity window of our microscope, i.e. the scale on which near-field optical images represent mainly optical contrast, is found to be ≈100 nm for light wavelengths in the visible region. We demonstrate imaging of near-field components of a dipole field and purely dielectric contrast (related to well-width fluctuations in a semiconductor quantum well) with a spatial resolution of ≈100 nm. The results obtained show that such a near-field technique can be used for polarization-sensitive imaging with reasonably high spatial resolution and suggest a number of applications for this technique.     

Towards phonon photonics: scattering-type near-field optical microscopy reveals phonon-enhanced near-field interaction

Diffraction limits the spatial resolution in classical microscopy or the dimensions of optical circuits to about half the illumination wavelength. Scanning near-field microscopy can overcome this limitation by exploiting the evanescent near fields existing close to any illuminated object. We use a scattering-type near-field optical microscope (s-SNOM) that uses the illuminated metal tip of an atomic force microscope (AFM) to act as scattering near-field probe. The presented images are direct evidence that the s-SNOM enables optical imaging at a spatial resolution on a 10 nm scale, independent of the wavelength used (λ=633 nm and 10 μm). Operating the microscope at specific mid-infrared frequencies we found a tip-induced phonon-polariton resonance on flat polar crystals such as SiC and Si₃N₄. Being a spectral fingerprint of any polar material such phonon-enhanced near-field interaction has enormous applicability in nondestructive, material-specific infrared microscopy at nanoscale resolution. The potential of s-SNOM to study eigenfields of surface polaritons in nanostructures opens the door to the development of phonon photonics—a proposed infrared nanotechnology that uses localized or propagating surface phonon polaritons for probing, manipulating and guiding infrared light in nanoscale devices, analogous to plasmon photonics.     

Femtosecond near-field spectroscopy: carrier relaxation and transport in single quantum wires

Quasi-two-colour femtosecond pump and probe spectroscopy and near-field scanning optical microscopy are combined to study the carrier dynamics in single semiconductor nanostructures. In temporally, spectrally and spatially resolved measurements with a time resolution of 200 fs and a spatial resolution of 200 nm, the non-linear change in reflectivity of a single quantum wire is mapped in real space and time. The experiments show that carrier relaxation into a single quantum wire occurs on a 100 fs time scale at room temperature. Evidence is given for a transient unipolar electron transport along the wire axis on a picosecond time and 100 nm length scale.     

Three-dimensional analysis of light propagation through uncoated near-field fibre probes

The near-field emission from uncoated tapered fibre probes is investigated for different probe geometries. The three-dimensional model calculations are based on Maxwell's curl equations and describe the propagation of a 10 fs optical pulse (λ = 805 nm) through tapers of different lengths and different diameters of the taper exit. The numerical evaluation is done with a finite difference time domain code. Two tapers with cone angles of 50°, with taper lengths of 1.5 µm and 1.0 µm and exit diameters of 100 nm and 520 nm, respectively, are considered. We find that without sample the short taper with large exit diameter optimizes both light transmission and spatial resolution. In the presence of a sample with a high dielectric constant, however, the spatial near-field distribution changes drastically for both taper geometries. We find a pronounced increase in spatial resolution, down to about 250 nm inside the medium. This collimation of the near-field distribution arises from interferences between emitted and reflected light from the sample surface and from a collimation effect that the field experiences in the high-index semiconductor material. The combination of high spatial resolution and transmission and collection efficiencies makes such probes interesting for spectroscopic investigations, as demonstrated by recent experiments.     

Removal of carbon contamination in ETEM by introducing Ar during electron beam irradiation

We demonstrated that the high spatial resolution absorption contrast imaging of the crystal of vitamin B9 has absorption at ultraviolet wavelengths. The absorption wavelength matches with the wavelength of the emission of the fluorescent thin film of an electron-beam excitation-assisted (EXA) optical microscope. The fine crystal structure was imaged beyond the optical diffraction limit. The image contrast corresponded with the thickness of the crystal. The illumination light is absorbed with the vitamin B9 crystal and the intensity of the transmitted light depends on the thickness of the vitamin B9 crystal. The EXA optical microscope is useful for analysis of growth of a crystal, bioimaging and so on.     

An evanescent-field optical microscope

The classic diffraction limit of resolution in optical microscopy (～γ/2) can be overcome by detecting the diffracted field of a submicrometre-size probe in its near field. The present stage of this so-called scanning near-field optical microscopy (SNOM) is reviewed. An evanescent-field optical microscope (EFOM) is presented in which the near-field regime is provided by the exponentially decaying evanescent field caused by total internal reflection at a refractive-index transition. A sample placed in this field causes a spatial variation of the evanescent field which is characteristic for the dielectric and topographic properties of the sample. The evanescent field is frustrated by a dielectric probe and thus converted into a radiative field. In our case the probe consists either of an etched optical fibre or of a highly sharpened diamond tip. The probe is scanned over the sample surface with nanometre precision using a piezo-electric positioner. The distance between probe and sample is controlled by a feedback on the detected optical signal. The resolution of the microscope is determined by both the gradient of the evanescent field and the sharpness of the tip. Details of the experimental set-up are discussed. The coupling of the evanescent field to the submicrometre probe as a function of probe-sample distance, angle of incidence and polarization has been characterized quantitatively. The observed coupling is generally in agreement with presented theoretical calculations. Microscopy has been performed on a regular latex sphere structure, which clearly demonstrates the capacity of the evanescent-field optical microscope for nanometre-scale optical imaging. Resolution is typically 100 nm laterally and 10 nm vertically. The technique is promising for biological applications, especially if combined with optical spectroscopy.     

Optical characterization of probes for photon scanning tunnelling microscopy

The photon scanning tunnelling microscope is a well-established member of the family of scanning near-field optical microscopes used for optical imaging at the subwavelength scale. The quality of the probes, typically pointed uncoated optical fibres, used is however, difficult to evaluate in a direct manner and has most often been inferred from the apparent quality of recorded optical images. Complicated near-field optical imaging characteristics, together with the possibility of topographically induced artefacts, however, has increased demands for a more reliable probe characterization technique. Here we present experimental results obtained for optical characterization of two different probes by imaging of a well-specified near-field intensity distribution at various spatial frequencies. In particular, we observe that a sharply pointed dielectric probe can be highly suitable for imaging when using p-polarized light for the illumination. We conclude that the proposed scheme can be used directly for probe characterization and, subsequently, for determination of an optical transfer function. which would allow one to deduce from an experimentally obtained image of a weakly scattering sample the field distribution existing near the sample surface in the absence of the probe.     

Optical characterization of probes for photon scanning tunnelling microscopy

The photon scanning tunnelling microscope is a well-established member of the family of scanning near-field optical microscopes used for optical imaging at the sub-wavelength scale. The quality of the probes, typically pointed uncoated optical fibres, used is however, difficult to evaluate in a direct manner and has most often been inferred from the apparent quality of recorded optical images. Complicated near-field optical imaging characteristics, together with the possibility of topographically induced artefacts, however, has increased demands for a more reliable probe characterization technique. Here we present experimental results obtained for optical characterization of two different probes by imaging of a well-specified near-field intensity distribution at various spatial frequencies. In particular, we observe that a sharply pointed dielectric probe can be highly suitable for imaging when using p -polarized light for the illumination. We conclude that the proposed scheme can be used directly for probe characterization and, subsequently, for determination of an optical transfer function, which would allow one to deduce from an experimentally obtained image of a weakly scattering sample the field distribution existing near the sample surface in the absence of the probe.     

SEM characterization of silicon nanostructures: can we meet the challenge?

The current semiconductor technology road map for device scaling champions a 4.5 nm gate length in production by 2022. The scanning electron microscope (SEM) as applied to critical dimensions (CD) metrology and associated characterization modes such as electron beam-induced current and cathodoluminescence (CL) has proved to be a workhorse for the semiconductor industry during the microelectronics era. We review some of the challenges facing these techniques in light of the silicon nanotechnology road map. We present some new results using voltage contrast imaging and CL spectroscopy of top-down fabricated silicon nanopillar/nanowires (<100 nm diameter), which highlight the visualization challenge. However, both techniques offer the promise of providing process characterization on the 10-20 nm scale with existing technology. Visualization at the 1 nm scale with these techniques may have to wait for aberration-corrected SEM to become more widely available. Basic secondary electron imaging and CD applications may be separately addressed by the He-ion microscope.     

Polarization effects in near-field excitation — collection probe optical microscopy of a single quantum dot

We solve numerically the three-dimensional vector form of Maxwell's equation for the situation of near-field excitation and collection of luminescence from a single quantum dot, using a scanning near-field optical fibre probe with sub-wavelength resolution. We highlight the importance of polarization-dependent effects in both the near-field excitation and collection processes. Applying a finite-difference time domain method, we calculate the complete vector fields emerging from a realistic probe structure which is in close proximity to a semiconductor surface. We model the photoluminescence from the quantum dot in terms of electric dipoles of different polarization directions, and determine the near-field luminescence images of the dot captured by the same probe. We show that a collimating effect in the high index semiconductor significantly improves the spatial resolution in the excitation–collection mode. We find that the spatial resolution, image shape and collection efficiency of near-field luminescence imaging strongly depend on the polarization direction as represented by the orientation of the radiating electric dipoles inside the quantum dot.     

Scanning near-field cathodoluminescence investigations

By implementing a scanning near-field optical microscope into the analysis chamber of a scanning electron microscope, the light emitted due to cathodoluminescence can be locally detected in the near-field using tapered, coated optical fibers. In addition to the ability to perform contactless measurements of local diffusion lengths, the achievable spatial resolution can be increased to about 50 nanometers.     

Image contrast of dielectric specimens in transmission mode near-field scanning optical microscopy: imaging properties and tip artefacts

Near-field scanning optical microscopy (NSOM) is a scanned probe technique utilizing a subwavelength-sized light source for high-resolution imaging of surfaces. Although NSOM has the potential to exploit and extend the experimental utility of the modern light microscope, the interpretation of image contrast is not straightforward. In near-field microscopy the illumination intensity of the source (probe) is not a constant value, rather it is a function of the probe–sample electronic environment. A number of dielectric specimens have been studied by NSOM to elucidate the contrast role of specimen type, topography and crystallinity; a summary of metallic specimen observations is presented for comparative purposes. Near-field image contrast is found to be a result of lateral changes in optical density and edge scattering for specimens with little sample topography. For surfaces with considerable topography the contributions of topographic (Z) axis contrast to lateral (X,Y) changes in optical density have been characterized. Selected near-field probes have also been shown to exhibit a variety of unusual contrast artefacts. Thorough study of polarization contrast, optical edge (scattering) contrast, as well as molecular orientation in crystalline specimens, can be used to distinguish lateral contrast from topographic components. In a few cases Fourier filtering can be successfully applied to separate the topographic and lateral contrast components.     

Tip-enhanced near-field Raman spectroscopy with a scanning tunneling microscope and side-illumination optics

Conventional Raman spectroscopy (RS) suffers from low spatial resolution and low detection sensitivity due to the optical diffraction limit and small interaction cross sections. It has been reported that a highly localized and significantly enhanced electromagnetic field could be generated in the proximity of a metallic tip illuminated by a laser beam. In this study, a tip-enhanced RS system was developed to both improve the resolution and enhance the detection sensitivity using the tip-enhanced near-field effects. This instrument, by combining RS with a scanning tunneling microscope and side-illumination optics, demonstrated significant enhancement on both optical sensitivity and spatial resolution using either silver (Ag)-coated tungsten (W) tips or gold (Au) tips. The sensitivity improvement was verified by observing the enhancement effects on silicon (Si) substrates. Lateral resolution was verified to be below 100 nm by mapping Ag nanostructures. By deploying the depolarization technique, an apparent enhancement of 175% on Si substrates was achieved. Furthermore, the developed instrument features fast and reliable optical alignment, versatile sample adaptability, and effective suppression of far-field signals.     

Nano-slit probes for near-field optical microscopy fabricated by focused ion beams

The near-field probes described in this paper are based on metallized non-contact atomic force microscope cantilevers made of silicon. For application in high-resolution near-field optical/infrared microscopy, we use aperture probes with the aperture being fabricated by focused ion beams. This technique allows us to create apertures of sub-wavelength dimensions with different geometries. In this paper we present the use of slit-shaped apertures which show a polarization-dependent transmission efficiency and a lateral resolution of < 100 nm at a wavelength of 1064 nm. As a test sample to characterize the near-field probes we investigated gold/palladium structures, deposited on an ultrathin chromium sublayer on a silicon wafer, in constant-height mode.     

Nano-slit probes for near-field optical microscopy fabricated by focused ion beams

The near-field probes described in this paper are based on metallized non-contact atomic force microscope cantilevers made of silicon. For application in high-resolution near-field optical/infrared microscopy, we use aperture probes with the aperture being fabricated by focused ion beams. This technique allows us to create apertures of sub-wavelength dimensions with different geometries. In this paper we present the use of slit-shaped apertures which show a polarization-dependent transmission efficiency and a lateral resolution of < 100 nm at a wavelength of 1064 nm. As a test sample to characterize the near-field probes we investigated gold/palladium structures, deposited on an ultrathin chromium sublayer on a silicon wafer, in constant-height mode.     

Femtosecond near-field scanning optical microscopy

We have developed an instrument for optically measuring carrier dynamics in thin-film materials with approximately 150 nm lateral resolution, approximately 250 fs temporal resolution and high sensitivity. This is accomplished by combining an ultrafast pump-probe laser spectroscopic technique with a near-field scanning optical microscope. A diffraction-limited pump and near-field probe configuration is used, with a novel detection system that allows for either two-colour or degenerate pump and probe photon energies, permitting greater measurement flexibility than that reported in earlier published work. The capabilities of this instrument are proven through near-field degenerate pump-probe studies of carrier dynamics in GaAs/AIGaAs single quantum well samples locally patterned by focused ion beam (FIB) implantation. We find that lateral carrier diffusion across the nanometre-scale FIB pattern plays a significant role in the decay of the excited carriers within approximately 1 microm of the implanted stripes, an effect which could not have been resolved with a far-field system.     

太赫兹近场光学亚表面检测技术研究

研究了太赫兹散射式扫描近场光学显微镜（Terahertz scattering-type scanning near-field optical microscopy,THz s-SNOM）对亚表面金属微纳结构的显微成像检测。首次采用自主搭建的THz s-SNOM系统对表面覆盖了六方氮化硼薄膜的金微米线进行太赫兹近场显微测量,获得了具有纳米量级空间分辨率和较高对比度的近场显微图。结合全波数值模拟,分析了THz s-SNOM探测亚表面金属微纳结构的空间分辨率、近场散射信号强度和成像对比度。研究表明,THz s-SNOM具有优良的亚表面显微成像检测能力,可应用于微纳电子器件的亚表面结构表征和缺陷检测。     

Medical Imaging Techniques Combining Light and Ultrasound

The combination of light and ultrasound can lead to new medical imaging techniques combining the spectroscopic capability of light with the spatial resolution of ultrasound. Spectroscopy can be used to measure blood volume and blood oxygen, but because most biological tissues are highly scattering at optical wavelengths, spatial resolution is poor. Ultrasound provides excellent resolution, but not good soft-tissue contrast. There are many techniques for combining light and ultrasound, but the two discussed in this paper have emerged as having the most promise for medical applications. In the first, optoacoustic imaging, an acoustic pulse is generated by a pulse of laser light, and the detected sound is used to produce an image. In the second, acousto-photonic imaging, ultrasound modulates laser light used for diffusive optical tomography. Both of these techniques show promise for a variety of medical applications.     

Topography and near-field image measurement of soft biological samples in liquid by using a tuning fork based bent optical-fiber sensor

The fabrication of a tuning fork based bent optical-fiber sensor and its application for topography and near-field image measurement of soft biological samples in physiological solution are reported. By adopting the bent optical fiber and tuning fork feedback scheme, the possibility of signal interference with stray light is minimized, which is especially important for near-field applications. From the measured tuning fork amplitude and its calibration with the preamplifier output voltage, it was determined that the interaction force between the fiber tip and a soft sample in liquid needs to be controlled within approximately 10 nN level and that the image quality depends sensitively to the interaction force. The results of topography measurements of fixed COS-7 and MCF-7 cells in phosphate buffered saline and of the near-field imaging of red blood cell also in phosphate buffered saline with a resolution of about 100 nm are presented.     

Contrast and resolution enhancement of a near-field optical microscope by using a modulation technique

A new design of a tunneling near-field optical microscope (TNOM) combined with an atomic force microscope (AFM) is presented. This design can be used to generate three different images of the sample's surface: a non-contact (tapping mode) AFM image, a conventional TNOM and an image of a modulation signal of the conventional TNOM, which we call AC-TNOM. The images are obtained simultaneously, using a single light source. It is shown that the AC-TNOM has better resolution ( approximately 200A) and contrast compared to conventional TNOM ( approximately 400A).