Implementation of Low‐Power Electronic Devices Using Solution‐Processed Tantalum Pentoxide Dielectric

The development of solution‐processed field effect transistors (FETs) based on organic and hybrid materials over the past two decades has demonstrated the incredible potential in these technologies. However, solution processed FETs generally require impracticably high voltages to switch on and off, which precludes their application in low‐power devices and prevent their integration with standard logic circuitry. Here, a universal and environmentally benign solution‐processing method for the preparation of Ta₂O₅, HfO₂ and ZrO₂ amorphous dielectric thin films is demonstrated. High mobility CdS FETs are fabricated on such high‐κ dielectric substrates entirely via solution‐processing. The highest mobility, 2.97 cm² V^?1 s^?1 is achieved in the device with Ta₂O₅ dielectric with a low threshold voltage of 1.00 V, which is higher than the mobility of the reference CdS FET with SiO₂ dielectric with an order of magnitude decrease in threshold voltage as well. Because these FETs can be operated at less than 5 V, they may potentially be integrated with existing logic and display circuitry without significant signal amplification. This report demonstrates high‐mobility FETs using solution‐processed Ta₂O₅ dielectrics with drastically reduced power consumption; ≈95% reduction compared to that of the device with a conventional SiO₂ gate dielectric.     

Variable Temperature Mobility Analysis of n‐Channel,p‐Channel,and Ambipolar Organic Field‐Effect Transistors

The temperature dependence of field‐effect transistor (FET) mobility is analyzed for a series of n‐channel, p‐channel, and ambipolar organic semiconductor‐based FETs selected for varied semiconductor structural and device characteristics. The materials (and dominant carrier type) studied are 5,5′′′‐bis(perfluorophenacyl)‐2,2′:5′,2″:5″,2′′′‐quaterthiophene ( 1 , n‐channel), 5,5′′′‐bis(perfluorohexyl carbonyl)‐2,2′:5′,2″:5″,2′′′‐quaterthiophene ( 2 , n‐channel), pentacene ( 3 , p‐channel); 5,5′′′‐bis(hexylcarbonyl)‐2,2′:5′,2″:5″,2′′′‐quaterthiophene ( 4 , ambipolar), 5,5′′′‐bis‐(phenacyl)‐2,2′: 5′,2″:5″,2′′′‐quaterthiophene ( 5 , p‐channel), 2,7‐bis((5‐perfluorophenacyl)thiophen‐2‐yl)‐9,10‐phenanthrenequinone ( 6 , n‐channel), and poly(N‐(2‐octyldodecyl)‐2,2′‐bithiophene‐3,3′‐dicarboximide) ( 7 , n‐channel). Fits of the effective field‐effect mobility (µ_eff) data assuming a discrete trap energy within a multiple trapping and release (MTR) model reveal low activation energies (E_As) for high‐mobility semiconductors 1 – 3 of 21, 22, and 30 meV, respectively. Higher E_A values of 40–70 meV are exhibited by 4 – 7 ‐derived FETs having lower mobilities (µ_eff). Analysis of these data reveals little correlation between the conduction state energy level and E_A, while there is an inverse relationship between E_A and µ_eff. The first variable‐temperature study of an ambipolar organic FET reveals that although n‐channel behavior exhibits E_A = 27 meV, the p‐channel regime exhibits significantly more trapping with E_A = 250 meV. Interestingly, calculated free carrier mobilities (µ₀) are in the range of ～0.2–0.8 cm² V^?1 s^?1 in this materials set, largely independent of µ_eff. This indicates that in the absence of charge traps, the inherent magnitude of carrier mobility is comparable for each of these materials. Finally, the effect of temperature on threshold voltage (V_T) reveals two distinct trapping regimes, with the change in trapped charge exhibiting a striking correlation with room temperature µ_eff. The observation that E_A is independent of conduction state energy, and that changes in trapped charge with temperature correlate with room temperature µ_eff, support the applicability of trap‐limited mobility models such as a MTR mechanism to this materials set.     

Oligothiophene‐Functionalized Truxene: Star‐Shaped Compounds for Organic Field‐Effect Transistors

Organic field‐effect transistors (OFETs) based on oligothiophene‐functionalized truxene derivatives have been fabricated for use as novel star‐shaped organic semiconductors in solution‐processible organic electronics. The electronic and optical properties of compounds 1 – 3 , with increasing numbers of thiophene rings at each of the three branches, have been investigated using scanning electron microscopy (SEM), X‐ray diffraction measurements, and ultraviolet–visible (UV‐vis) and photoluminescence spectroscopies. The results show that with a stepwise increase of the thiophene rings at every branch, a transition from a polycrystalline to an amorphous state is observed. The characteristics of compounds 1 , 2 , and 3 used for OFETs exhibit a significant difference. The mobility depends greatly on the morphology in the solid state, and decreases in going from 1 to 3 . Mobilities up to 1.03 × 10^–3 cm² V^–1 s^–1 and an on/off ratio of about 10³ for compound 1 have been achieved; these are the highest values for star‐shaped organic semiconductors used for OFETs so far. All the results demonstrate that the truxene core of the oligothiophene‐functionalized truxene derivatives not only extends the π‐delocalized system, but also leads to high mobilities for the compounds.     

Kinked Star‐Shaped Fluorene/ Triazatruxene Co‐oligomer Hybrids with Enhanced Functional Properties for High‐Performance,Solution‐Processed,Blue Organic Light‐Emitting Diodes

A novel series of kinked star‐shaped oligofluorene/triazatruxene hybrids are conveniently prepared via a powerful microwave‐enhanced multiple coupling methodology. Constructing kinked star‐shaped architectures can effectively suppress crystallization and aggregation. The resulting materials are highly amorphous, showing stable amorphous morphology against crystallization. A triazatruxene core endows the materials with elevated highest occupied molecular orbital (HOMO) levels that are well matched to the anode work function, leading to a significantly improved hole‐injection property. They hybrids are highly luminescent in both solution (quantum yield is 0.52–0.80) and the solid‐state (quantum yield is 0.45–0.76) with bright blue emission. Remarkably, solution‐processed devices displaying single‐layer electroluminescence (EL) based on these oligomers exhibit efficient blue EL and demonstrate striking color stability, almost unchanged with increasing driving voltage. The best device performance has a rather low turn‐on voltage (3.3 V) and a high device efficiency (2.16 % @ 2382 cd m^–2) as well as a high brightness (7714 cd m^–2 @ 10 V) with CIE coordinates of (0.16, 0.15); it shows remarkably better EL performance than devices based on linear oligofluorene or polyfluorene counterparts. The results prove that an oligomer with kinked star‐shaped architecture is extremely promising for efficient and stable blue EL. The reasons for the enhanced functional properties and the improved color stability are discussed in relation to the chemical structures and components.     

High‐Performance,Low‐Operating‐Voltage Organic Field‐Effect Transistors with Low Pinch‐Off Voltages

Organic field‐effect transistors suffer from ultra‐high operating voltages in addition to their relative low mobility. A general approach to low‐operating‐voltage organic field‐effect transistors (OFETs) using donor/acceptor buffer layers is demonstrated. P‐type OFETs with acceptor molecule buffer layers show reduced operating voltages (from 60–100 V to 10–20 V), with mobility up to 0.19 cm² V^?1 s^?1 and an on/off ratio of 3 × 10⁶. The subthreshold slopes of the devices are greatly reduced from 5–12 V/decade to 1.68–3 V/decade. This favorable combination of properties means that such OFETs can be operated successfully at voltages below 20 V (|V_DS| ≤ 20 V, |V_GS| ≤ 20 V). This method also works for n‐type semiconductors. The reduced operating voltage and low pinch‐off voltage contribute to the improved ordering of the polycrystalline films, reduced grain boundary resistance, and steeper subthreshold slopes.     

Effect of Doping Concentration on Microstructure of Conjugated Polymers and Characteristics in N‐Type Polymer Field‐Effect Transistors

Despite extensive progress in organic field‐effect transistors, there are still far fewer reliable, high‐mobility n‐type polymers than p‐type polymers. It is demonstrated that by using dopants at a critical doping molar ratio (MR), performance of n‐type polymer poly[[N,N9‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,59‐(2,29‐bithiophene)] (P(NDI2DO‐T2)) field‐effect transistors (FETs) can be significantly improved and simultaneously optimized in mobility, on–off ratio, crystallinity, injection, and reliability. In particular, when using the organic dopant bis(cyclopentadienyl)–cobalt(II) (cobaltocene, CoCp₂) at a low concentration (0.05 wt%), the FET mobility is increased from 0.34 to 0.72 cm² V^–1 s^–1, and the threshold voltage was decreased from 32.7 to 8.8 V. The relationship between the MR of dopants and electrical characteristics as well as the evolution in polymer crystallinity revealed by synchrotron X‐ray diffractions are systematically investigated. Deviating from previous discoveries, it is found that mobility increases first and then decreases drastically beyond a critical value of MR. Meanwhile, the intensity and width of the main peak of in‐plane X‐ray diffraction start to decrease at the same critical MR. Thus, the mobility decrease is correlated with the disturbed in‐plane crystallinity of the conjugated polymer, for both organic and inorganic dopants. The method provides a simple and efficient approach to employing dopants to optimize the electrical performance and microstructure of P(NDI2DO‐T2).     

Solution‐Processed Ambipolar Field‐Effect Transistor Based on Diketopyrrolopyrrole Functionalized with Benzothiadiazole

Ambipolar charge transport in a solution‐processed small molecule 4,7‐bis{2‐[2,5‐bis(2‐ethylhexyl)‐3‐(5‐hexyl‐2,2′:5′,2″‐terthiophene‐5″‐yl)‐pyrrolo[3,4‐c]pyrrolo‐1,4‐dione‐6‐yl]‐thiophene‐5‐yl}‐2,1,3‐benzothiadiazole (BTDPP2) transistor has been investigated and shows a balanced field‐effect mobility of electrons and holes of up to ～10^?2 cm² V^?1 s^?1. Using low‐work‐function top electrodes such as Ba, the electron injection barrier is largely reduced. The observed ambipolar transport can be enhanced over one order of magnitude compared to devices using Al or Au electrodes. The field‐effect mobility increases upon thermal annealing at 150 °C due to the formation of large crystalline domains, as shown by atomic force microscopy and X‐ray diffraction. Organic inverter circuits based on BTDPP2 ambipolar transistors display a gain of over 25.     

Fluorene‐Based Copolymers for Red‐Light‐Emitting Diodes

The syntheses of new fluorene‐based π‐conjugated copolymers; namely, poly((5,5″‐(3′,4′‐dihexyl‐2,2′;5′,2″‐terthiophene 1′,1′‐dioxide))‐alt‐2,7‐(9,9‐dihexylfluorene)) (PFTORT), poly((5,5″″‐(3″,4″‐dihexyl‐2,2′:5′,2′:5″,2‴:5‴,2″″‐quinquethiophene 1″,1″‐dioxide))‐alt‐2,7‐(9,9‐dihexylfluorene)) (PFTTORTT), and poly((5,5‐E‐α‐(2‐thienyl)methylene)‐2‐thiopheneacetonitrile)‐alt‐2,7‐(9,9‐dihexylfluorene)) (PFTCNVT), are reported. In the solid state, PFTORT and PFTCNVT present red–orange emission (with a maximum at 610 nm) while PFTTORTT shows a red emission with a maximum at 666 nm. In all cases, electrochemical measurements have revealed p‐ and n‐dopable copolymers. All these copolymers have been successfully tested in simple light‐emitting diodes and show promising results for orange‐ and red‐light‐emitting devices.     

Fully Transparent p‐MoTe2 2D Transistors Using Ultrathin MoOx/Pt Contact Media for Indium‐Tin‐Oxide Source/Drain

Since transition metal dichalcogenide (TMD) semiconductors are found as 2D van der Waals materials with a discrete energy bandgap, many 2D‐like thin field effect transistors (FETs) and PN diodes are reported as prototype electrical and optoelectronic devices. As a potential application of display electronics, transparent 2D FET devices are also reported recently. Such transparent 2D FETs are very few in report, yet no p‐type channel 2D‐like FETs are seen. Here, 2D‐like thin transparent p‐channel MoTe₂ FETs with oxygen (O₂) plasma‐induced MoO_x/Pt/indium‐tin‐oxide (ITO) contact are reported for the first time. For source/drain contact, 60 s short O₂ plasma and ultrathin Pt‐deposition processes on MoTe₂ surface are sequentially introduced before ITO thin film deposition and patterning. As a result, almost transparent 2D FETs are obtained with a decent mobility of ≈5 cm² V^?1 s^?1, a high ON/OFF current ratio of ≈10⁵, and 70% transmittance. In particular, for normal MoTe₂ FETs without ITO, O₂ plasma process greatly improves the hole injection efficiency and device mobility (≈60 cm² V^?1 s^?1), introducing ultrathin MoO_x between Pt source/drain and MoTe₂. As a final device application, a photovoltaic current modulator, where the transparent FET stably operates as gated by photovoltaic effects, is integrated.     

Self‐Assembled,Millimeter‐Sized TIPS‐Pentacene Spherulites Grown on Partially Crosslinked Polymer Gate Dielectric

Here, a highly crystalline and self‐assembled 6,13‐bis(triisopropylsilylethynyl) pentacene (TIPS‐Pentacene) thin films formed by simple spin‐coating for the fabrication of high‐performance solution‐processed organic field‐effect transistors (OFETs) are reported. Rather than using semiconducting organic small‐molecule–insulating polymer blends for an active layer of an organic transistor, TIPS‐Pentacene organic semiconductor is separately self‐assembled on partially crosslinked poly‐4‐vinylphenol:poly(melamine‐co‐formaldehyde) (PVP:PMF) gate dielectric, which results in a vertically segregated semiconductor‐dielectric film with millimeter‐sized spherulite‐crystalline morphology of TIPS‐Pentacene. The structural and electrical properties of TIPS‐Pentacene/PVP:PMF films have been studied using a combination of polarized optical microscopy, atomic force microscopy, 2D‐grazing incidence wide‐angle X‐ray scattering, and secondary ion mass spectrometry. It is finally demonstrated a high‐performance OFETs with a maximum hole mobility of 3.40 cm² V^?1 s^?1 which is, to the best of our knowledge, one of the highest mobility values for TIPS‐Pentacene OFETs fabricated using a conventional solution process. It is expected that this new deposition method would be applicable to other small molecular semiconductor–curable polymer gate dielectric systems for high‐performance organic electronic applications.     

π‐Conjugated Oligothiophene‐Based Polycatenar Liquid Crystals: Self‐Organization and Photoconductive,Luminescent, and Redox Properties

A series of liquid‐crystalline (LC) π‐ ‐conjugated oligothiophenes bearing three or two alkoxy chains at their extremities has been designed and synthesized. These polycatenar oligothiophenes form various LC nanostructures including smectic, columnar, and micellar cubic phases. These properties depend on the number and length of the terminal alkoxy chains. The hole mobilities for the oligothiophenes have been measured. The layered smectic and columnar structures are capable of transporting holes, leading to mobilities of up to 0.01 cm² V^?1 s^?1. The columnar LC assemblies have also been explored to produce linearly polarized light‐emission. Fine red polarized fluorescence is observed from a uniaxially aligned film of the oligothiophenes. The redox properties of the oligothiophenes both in solutions and in films have been examined. The oligothiophenes exhibit electrochromism upon applying an oxidative potential. The present design strategy is useful for fabricating a variety of functional electro‐active molecular assemblies.     

Ambipolar Charge Transport in Air‐Stable Polymer Blend Thin‐Film Transistors

Ambipolar thin‐film transistors based on a series of air‐stable, solution‐processed blends of an n‐type polymer poly(benzobisimidazobenzophenanthroline) (BBL) and a p‐type small molecule, copper phthalocyanine (CuPc) are demonstrated, where all fabrication and measurements are performed under ambient conditions. The hole mobilities are in the range of 6.0 × 10^–6 to 2.0 × 10^–4 cm² V^–1 s^–1 and electron mobilities are in the range of 2.0 × 10^–6 to 3.0 × 10^–5 cm² V^–1 s^–1, depending on the blend composition. UV‐vis spectroscopy and electron diffraction show crystallization of CuPc in the metastable α‐crystal form within the semicrystalline BBL matrix. These CuPc domains develop into elongated ribbon‐like crystalline nanostructures when the blend films are processed in methanol, but not when they are processed in water. On methylene chloride vapor annealing of the blend films, a phase transformation of CuPc from the α‐form to the β‐form is observed, as shown by optical absorption spectroscopy and electron diffraction. Ambipolar charge transport is only observed in the blend films where CuPc crystallized in the elongated ribbon‐like nanostructures (α‐form). Ambipolar behavior is not observed with CuPc in the β‐polymorph. Unipolar hole mobilities as high as 2.0 × 10^–3 cm² V^–1 s^–1 are observed in these solution‐processed blend field‐effect transistors (FETs) on prolonged treatment in methanol, comparable to previously reported hole mobilities in thermally evaporated CuPc FETs. These results show that ambipolar charge transport and carrier mobilities in multicomponent organic semiconductors are intricately related to the phase‐separated nanoscale and crystalline morphology.     

Ambipolar Organic Field‐Effect Transistors from Cross‐Conjugated Aromatic Quaterthiophenes; Comparisons with Quinoidal Parent Materials

This contribution presents an electrochemical, Raman spectroscopic, and theoretical study probing the differences in molecular and electronic structure of two quinoidal oligothiophenes (3′,4′‐dibutyl‐5,5″‐bis(dicyanomethylene)‐5,5″‐dihydro‐2,2′:5′,2″‐terthiophene and 5,5′‐bis(dicyanomethylene)‐3‐hexyl‐2,5‐dihydro‐4,4′‐dihexyl‐2,2′,5,5′‐tetrahydro‐tetrathiophene) with terminal tetracyanomethylene functionalization and aromatic oligothiophenes where acceptor moieties are positioned at lateral positions along the conjugated chain (6,6′‐dibutylsulfanyl‐[2,2′‐bi‐[4‐dicyanovinylene‐4H‐cyclopenta[2,1‐b:3,4‐b′]dithiophene]). In this way, the consequences of linear and cross conjugation are compared and contrasted. From this analysis, it is apparent that organic field‐effect transistors fabricated with cross‐conjugated tetrathiophene semiconductors should combine the benefits of an electron‐donor aromatic chain with strongly electron‐accepting tetracyanomethylene substituents. The corresponding organic field‐effect transistors exhibit ambipolar transport with rather similar hole and electron mobilities. Moreover, n‐channel conduction is enhanced to yield one of the highest electron mobilities found to date for this type of material.     

Room‐Temperature Self‐Organizing Characteristics of Soluble Acene Field‐Effect Transistors

We report on the room‐temperature self‐organizing characteristics of thin films of the organic small‐molecule semiconductor triethylsilylethynyl‐anthradithiophene (TES‐ADT) and its effect on the electrical properties of TES‐ADT‐based field‐effect transistors (FETs). The morphology of TES‐ADT films changed dramatically with time, and the field‐effect mobility of FETs based on these films increased about 100‐fold after seven days as a result of the change in molecular orientation from a tilted structure in the as‐prepared film to a well‐oriented structure in the final film. We found that the molecular movement is large enough to induce a conformational change to an energetically stable state in spin‐coated TES‐ADT films, because TES‐ADT has a low glass‐transition temperature (around room temperature). Our findings demonstrate that organic small‐molecule semiconductors that exhibit a low crystallinity immediately after spin‐coating can be changed into highly crystalline structures by spontaneous self‐organization of the molecules at room temperature, which results in improved electrical properties of FETs based on these semiconductors.     

Cellulose‐Based Ionogels for Paper Electronics

A new class of biofriendly ionogels produced by gelation of microcellulose thin films with tailored 1‐ethyl‐3‐methylimidazolium methylphosphonate ionic liquids are demonstrated. The cellulose ionogels show promising properties for application in flexible electronics, such as transparency, flexibility, transferability, and high specific capacitances of 5 to 15 μF cm^?2. They can be laminated onto any substrate such as multilayer‐coated paper and act as high capacitance dielectrics for inorganic (spray‐coated ZnO and colloidal ZnO nanorods) and organic (poly[3‐hexylthiophene], P3HT) electrolyte‐gated field‐effect transistors (FETs), that operate at very low voltages (<2 V). Field‐effect mobilities in ionogel‐gated spray‐coated ZnO FETs reach 75 cm² V^?1 s^?1 and a typical increase of mobility with decreasing specific capacitance of the ionogel is observed. Solution‐processed, colloidal ZnO nanorods and laminated cellulose ionogels enable the fabrication of the first electrolyte‐gated, flexible circuits on paper, which operate at bending radii down to 1.1 mm.     

V‐Shaped Thiophene‐Based Oligomers with Improved Electroluminescence Properties

The synthesis via the Stille coupling of a new family of oligomers derived from benzo[b]thiophene is reported. Owing to their branched molecular structure lacking any symmetry element, these compounds display a low tendency to crystallization and better film‐forming properties than their linear counterparts. Spin‐coated films show photoluminescence efficiencies up to 50 %. Light‐emitting diodes with spin‐coated films as the active layers display markedly improved performance with respect to similar devices based on linear oligothiophenes, with luminance values up to more than 10 000 cd m^–2. Semiempirical PM3 and ZINDO/S calculations provide insight into the molecular geometries and electron distribution of the frontier orbitals of the new compounds. Cyclic voltammetry data indicates that the transformation of the thienyl sulfur of benzo[b]thiophene to the corresponding thienyl‐S,S‐dioxide leads an increase in electron affinity by 0.5–0.7 V, analogous to that of the corresponding linear oligomers.     

High‐Performance,Air‐Stable,Top‐Gate,p‐Channel WSe2 Field‐Effect Transistor with Fluoropolymer Buffer Layer

High‐performance, air‐stable, p‐channel WSe₂ top‐gate field‐effect transistors (FETs) using a bilayer gate dielectric composed of high‐ and low‐k dielectrics are reported. Using only a high‐k Al₂O₃ as the top‐gate dielectric generally degrades the electrical properties of p‐channel WSe₂, therefore, a thin fluoropolymer (Cytop) as a buffer layer to protect the 2D channel from high‐k oxide forming is deposited. As a result, a top‐gate‐patterned 2D WSe₂ FET is realized. The top‐gate p‐channel WSe₂ FET demonstrates a high hole mobility of 100 cm²_­ V^?1 s^?1 and a I_ON/I_OFF ratio > 10⁷ at low gate voltages (V_GS ca. ?4 V) and a drain voltage (V_DS) of ?1 V on a glass substrate. Furthermore, the top‐gate FET shows a very good stability in ambient air with a relative humidity of 45% for 7 days after device fabrication. Our approach of creating a high‐k oxide/low‐k organic bilayer dielectric is advantageous over single‐layer high‐k dielectrics for top‐gate p‐channel WSe₂ FETs, which will lead the way toward future electronic nanodevices and their integration.     

Self‐Doping Cathode Interfacial Material Simultaneously Enabling High Electron Mobility and Powerful Work Function Tunability for High‐Efficiency All‐Solution‐Processed Polymer Light‐Emitting Diodes

A variety of N ‐hydrogenated/N ‐methylated pyridinium salts are elaborately designed and synthesized. Thermogravimetric and X‐ray photoelectron spectra analysis indicate the intensities of the N? H covalent bonds are strengthened step‐by‐step from 3,3′‐(5′‐(3‐(pyridin‐3‐yl)phenyl)‐[1,1′:3′,1″‐terphenyl]‐3,3″‐diyl)dipyridine (Tm)‐HCl to Tm‐HBr and then Tm‐TfOH, which results in gradually improved cathode interfacial modification abilities. The larger dipole moments of N⁺? H containing moieties compared to those of the N⁺? CH₃ endow them with more preferable interfacial modification abilities. Electron paramagnetic resonance signals reveal the existence of radical anions in the solid state of Tm‐TfOH, which enables its self‐doping property and high electron mobility up to 1.67 × 10^?3 cm² V^?1 s^?1. Using the Tm‐TfOH as the cathode interfacial layers (CILs), the phenyl‐substituted poly(para ‐phenylene vinylene)‐based all‐solution‐processed polymer light‐emitting diodes (PLEDs) achieve more preferable device performances than the poly[(9,9‐bis(3′‐(N ,N ‐dimethylamino)propyl)‐2,7‐fluorene)‐alt ‐2,7‐(9,9‐dioctylfluorene)]‐based ones, i.e., high current density of nearly 300 mA cm^?2, very high luminance over 15 000 cd m^?2 at a low bias of 5 V. Remarkably, the thickness of the CILs has little impact on the device performance and high efficiencies are maintained even at thicknesses up to 85 nm, which is barely realized in PLEDs with small‐molecule‐based electron transporting layers.     

High‐Speed,Low‐Voltage,and Environmentally Stable Operation of Electrochemically Gated Zinc Oxide Nanowire Field‐Effect Transistors

Single‐crystal, 1D nanostructures are well known for their high mobility electronic transport properties. Oxide‐nanowire field‐effect transistors (FETs) offer both high optical transparency and large mechanical conformability which are essential for flexible and transparent display applications. Whereas the “on‐currents” achieved with nanowire channel transistors are already sufficient to drive active matrix organic light emitting diode (AMOLED) displays; it is shown here that incorporation of electrochemical‐gating (EG) to nanowire electronics reduces the operation voltage to ≤2 V. This opens up new possibilities of realizing flexible, portable, transparent displays that are powered by thin film batteries. A composite solid polymer electrolyte (CSPE) is used to obtain all‐solid‐state FETs with outstanding performance; the field‐effect mobility, on/off current ratio, transconductance, and subthreshold slope of a typical ZnO single‐nanowire transistor are 62 cm²/Vs, 10⁷, 155 μS/μm and 115 mV/dec, respectively. Practical use of such electrochemically‐gated field‐effect transistor (EG FET) devices is supported by their long‐term stability in air. Moreover, due to the good conductivity (≈10^?2 S/cm) of the CSPE, sufficiently high switching speed of such EG FETs is attainable; a cut‐off frequency in excess of 100 kHz is measured for in‐plane FETs with large gate‐channel distance of >10 μm. Consequently, operation speeds above MHz can be envisaged for top‐gate transistor geometries with insulator thicknesses of a few hundreds of nanometers. The solid polymer electrolyte developed in this study has great potential in future device fabrication using all‐solution processed and high throughput techniques.     

High‐Efficiency Red Phosphorescent Iridium Dendrimers with Charge‐ Transporting Dendrons: Synthesis and Electroluminescent Properties

A series of 1‐phenylisoquinoline derivatives encapsulated with peripheral arylamines as dendrons are synthesized by using the Ullmann reaction and palladium‐catalyzed aromatic carbon–carbon Suzuki‐coupling reactions. Red‐emitting dendritic iridium complexes (called G1‐1 , G1‐2 , and G2 ) are synthesized using the following derivatives: N,N‐diphenyl‐3′‐isoquinolin‐4‐biphenylaniline, N,N‐di(9,9‐dimethylfluorenyl‐3′‐isoquinolin‐4‐biphenylaniline, N,N‐di(4′‐di(2′‐(9′,9′‐dimethylfluorenyl)amine)biphenyl‐3′‐isoquinolin‐4‐biphenylaniline as the first ligands and 5‐methyl‐3‐(pyridin‐2′‐yl)‐1H‐1,2,4‐triazole as an ancillary ligand. The obtained dendrimers are soluble in common organic solvents, and uniform thin films can be spin‐coated from such solutions. Devices fabricated from dendritic iridium complexes G1‐2 and G2 with a small molecule host are fabricated by spin‐coating from chloroform solution in different device configurations. G1‐2 and G2 show similar device performances with maximum external quantum efficiencies (EQEs) of 12.8 % and 11.8 % (photons/electron) and luminous efficiency of 9.2 cd A^–1 and 8.5 cd A^–1 at 0.1 mA cm^–2, respectively. Devices based on polymer host poly(9,9‐dioctylfluorene)(PFO) (30 % PBD (2‐(4‐biphenyl)‐5‐(4‐tert‐butylphenyl‐1,3,4‐oxadiazole)) show a slightly higher efficiency for G1‐2 , with a maximum EQE of 13.9 % at a much higher current density of 6.4 mA cm^–2 and luminance of 601 cd m^–2.