Ultra‐FFS TFT‐LCD with super image quality,fast response time,and strong pressure‐resistant characteristics

Fringe‐field‐switching (FFS) devices using liquid‐crystal (LC) with a negative dielectric anisotropy exhibit high transmittance and wide viewing angle simultaneously. Recently, we have developed an “Ultra‐FFS” thin‐film‐transistor (TFT) LCD using LC with a positive dielectric anisotropy that exhibits high transmittance, is color‐shift free, has a high‐contrast ratio in a wide range, experiences no crosstalk and has a fast response time of 25 msec. In this paper, the device concept is discussed, and, in addition, the pressure‐resistant characteristics of the devices compared with that of the twisted‐nematic (TN) LCD is discussed.     

High‐performance OCB‐mode field‐sequential‐color LCD

Abstract— Optically compensated bend (OCB) mode is a promising technology for future high‐quality display devices due to its wide viewing angle without gray‐scale inversion and color shift, fast response time, high contrast ratio, and wide temperature range. This paper summarizes the developments of the OCB mode and the optical performance of OCB‐mode field‐sequential‐color LCD.     

A 15‐in. XGA thresholdless antiferroelectric LCD addressed by TFTs and using the quasi‐dc driving method

Abstract— A 15‐in. TFT‐LCD with XGA resolution using thresholdless antiferroelectric liquid crystal (TLAF) has been developed. TLAF materials show V‐shaped switching and enable display of analog gray scale, wide viewing angle, and fast response. However, in the case that high‐resolution TFT‐LCDs using materials with large spontaneous polarization such as TLAF were driven by the conventional method, alternating current (ac) driving, the obtained contrast ratio was limited because of a sharp decline of holding voltage due to the growth of a depolarization field. In order to enhance the contrast ratio, a novel driving method referred to as quasi‐dc driving was proposed. In the quasi‐dc driving, the polarity of the applied voltage to liquid crystals inverts at certain intervals of several seconds. Moreover, the applied voltage and the charging time at the time of polarity inversion are increased more than the intended signals. By this method, the 15‐in. TFT‐LCD using TLAF with high contrast ratio (more than 100:1) and wide viewing angle was realized.     

A fast‐switching OCB‐mode LCD for high‐quality display applications

Abstract— Optically compensated bend (OCB) mode is a promising technology, due to its wide range of viewing angles without gray‐scale inversion or color shift, fast response, high contrast ratio, and wide temperature range. This paper summarizes the fundamental characteristics of OCB mode and discusses the development of field‐sequential‐color displays and 3‐D displays for future high‐quality display applications.     

Depth‐ and viewing‐angle‐enhanced 3‐D/2‐D switchable display system with high contrast ratio using multiple display devices and a lens array

Abstract— An improved 3‐D/2‐D switchable display system with enhanced depth and viewing angle by adding two LCD panels to an integral imaging system has been realized. The proposed system uses the see‐through property of an LCD panel and displays multiple sets of elemental images on the LCD panels to integrate them on multiple locations simultaneously. As a result, the depth of the 3‐D image can be enhanced. For wide viewing angles, the time‐multiplexing method was adopted by displaying mask patterns on the front LCD panel. In addition, another technique to increase the contrast ratio of the proposed system has also been developed. Some experimental results will be provided.     

Discharge efficiency of a 25‐in. high‐resolution SMPDP

Abstract— A novel round subpixel and triangle‐arrangement shadow‐mask plasma‐display panel (SMPDP) suitable for high‐resolution displays has been investigated. The discharge efficiency of this high‐resolution SMPDP and the AC coplanar PDP (ACCPDP) has been calculated separately. The variance of the discharge efficiency with pressure and xenon content will be reported. Results indicate that the SMPDP can reach a higher efficiency for high‐resolution displays than conventional ACCPDPs.     

Development of 100‐in. TFT‐LCDs for HDTV and public‐information‐display applications

Abstract— LCDs have achieved a full‐high‐definition resolution of 1920 × 1080 (16:9), 600‐nit brightness, 3000:1 dynamic contrast ratio, 92% color gamut, 178° viewing angle, and 5‐msec response time at all gray levels and are targeted for HDTV and public‐information‐display applications. Some unique technologies, such as Cu bus line, advanced wide view polarizer, and wide‐color‐gamut lamp, were applied. A new stitching‐free technology was developed to overcome the size limitation of the photomask in both the TFT and color‐filter processes. The size of the panel (100 in.), based on the wide format (16:9), is determined by the maximum efficiency of the world's first seventh‐generation line (glass size, 1950 × 2250 mm) in LG.Philips LCD's (LPL) Paju display cluster. The issues facing 100‐in. TFT‐LCDs will be discussed.     

Inorganic EL devices with high‐performance blue phosphor and application to 34‐in. flat‐panel televisions

Abstract— A high‐performance inorganic electroluminescence (EL) device has been successfully developed by using an EL structure with a thick dielectric layer (TDEL) and sputtered BaAl₂S₄:Eu blue phosphor. The luminance and efficacy were higher than 2300 cd/m² and 2.5 lm/W at L⁶⁰, 120 Hz, respectively. Furthermore, the luminance at L⁶⁰, 1.2 kHz was more than 23,000 cd/m². The phosphor layer has a single‐phase and a highly oriented crystalline structure. The phosphor also shows high stability in air. A 34‐in. high‐definition television (HDTV) has been developed by combining a TDEL structure and color‐conversion materials. The panels with an optimized color filter demonstrated a peak luminance of 350 cd/m², a color gamut of more than 100% NTSC, and a wide viewing angle similar to that of plasma‐display panels. The high reproducibility of the 34‐in. panels using our pilot line has been confirmed.     

Ultra‐high‐resolution 1058‐ppi OLED displays with 2.78‐in size using CAAC‐IGZO FETs with tandem OLED device and single OLED device

We fabricated new 2.78‐in 1058‐ppi organic light‐emitting diode (OLED) displays. The displays used OLED devices with a tandem structure and a single structure and a field effect transistor (FET) using c‐axis aligned crystalline In–Ga–Zn–O (CAAC‐IGZO) for an active layer and employing the 1.5‐µm rule over a glass substrate. Even in the displays with such high resolution exceeding 1000 ppi, crosstalk that was observed in the lower luminance region was suppressed. The displays achieved high color reproducibility and reduced viewing angle dependence.     

High‐performance 55‐in. diagonal WXGA PDP with extended ALIS technology

Abstract— We have developed a high‐performance 55‐in. diagonal WXGA PDP module with a novel structure by using Extended ALIS (Alternate Lighting of Surfaces) technology. The new cell structure that uses the common bus electrode concept was invented with a new driving scheme aimed toward progressive lighting. A new method of reducing dynamic false contour (DFC), motion adaptive subfield coding, was also developed. The newly developed 55‐in. WXGA panel has a 1000‐cd/m² peak luminance and a 160‐cd/m² full‐screen white luminance with a 9000 K color temperature at a 350‐W display power consumption.     

New high‐luminance 50‐ and 43‐in. ACPDPs with an improved panel structure

New 50‐ and 43‐in. ACPDPs, which have been developed and commercialized in 2001, show high luminance with improved cell structure and higher Xe‐content gas. The specific features of the cell structure are “T”‐shaped electrodes and waffle‐structured ribs, which are same as those of the previous model. Both the cell structure and gas conditions have been optimized. New green and blue phosphors have also been adopted. As a result, the luminous efficacy has been improved up to 1.8 lm/W by using a black stripe. The peak luminance of the 50‐ and 43‐in. PDPs have reached 900 and 1000 cd/m², respectively, while the power consumption of the 50‐in. PDP has been decreased to 380 W, which is 20% lower than that of our previous 50‐in. PDP.     

Development of 8‐in. oxide‐TFT‐driven flexible AMOLED display using high‐performance red phosphorescent OLED

An 8‐in. flexible active‐matrix organic light‐emitting diode (AMOLED) display driven by oxide thin‐film transistors (TFTs) has been developed. In‐Ga‐Zn‐O (IGZO)‐TFTs used as driving devices were fabricated directly on a plastic film at a low temperature below 200 °C. To form a SiO_x layer for use as the gate insulator of the TFTs, direct current pulse sputtering was used for the deposition at a low temperature. The fabricated TFT shows a good transfer characteristic and enough carrier mobility to drive OLED displays with Video Graphic Array pixels. A solution‐processable photo‐sensitive polymer was also used as a passivation layer of the TFTs. Furthermore, a high‐performance phosphorescent OLED was developed as a red‐light‐emitting device. Both lower power consumption and longer lifetime were achieved in the OLED, which used an efficient energy transfer from the host material to the guest material in the emission layer. By assembling these technologies, a flexible AMOLED display was fabricated on the plastic film. We obtained a clear and uniform moving color image on the display.     

Characteristics of a‐IZO TFTs with high‐κ HfSiOx gate insulator annealed in various conditions

In this work, we investigate the enhanced performance of amorphous indium zinc oxides‐based thin film transistors with hafnium silicate (HfSiO_x) gate insulators. HfSiO_x gate insulators annealed at various conditions are deposited by cosputtering of hafnium oxide and Si. The structural properties of HfSiO_x are investigated using the atomic force microscopy, X‐ray diffraction, and x‐ray photoelectron spectroscopy (XPS). techniques. Furthermore, the electrical characteristics of HfSiO_x are analyzed to investigate the effect of annealing conditions. We obtain optimal results for thin film transistors with HfSiO_x gate insulators annealed for 1 h at 100 °C, with a saturation mobility of 1.2 cm²/V · s, threshold voltage of 2.2 V, on current/off current ratio of 2.0 × 10⁶, and an insulator surface roughness of 0.187 nm root mean square.     

Robust adaptive fault‐tolerant tracking control for a class of high‐order nonlinear system with finite‐time prescribed performance

In this article, an improved prescribed performance adaptive control strategy is developed to handle the output tracking control problem for a class of nonlinear high‐order systems with actuator faults. The actuator faults considered include the bias fault and gain fault models. A technique of adding a power integrator is utilized to deal with the controller design problem of high‐order system. With the help of backstepping technology and the classic adaptive control, an output tracking control scheme is proposed, which can guarantee that all signals of the closed‐loop system are bounded and the tracking error converges to a finite‐time predetermined region. Finally, the feasibility of the presented control method is tested through the simulation results.     

Active‐matrix sensor in AMLCD detecting liquid‐crystal capacitance with LTPS‐TFT technology

Abstract— An active‐matrix capacitive sensor for use in AMLCDs as an in‐cell touch screen has been developed. Pixel sensor circuits are embedded in each pixel by using low‐temperature polycrystalline‐silicon (LTPS) TFT technology. It detects a change in the liquid‐crystal capacitance when it is touched. It is thin, light weight, highly sensitive, and detects three or more touch events simultaneously.     

An 82‐in. ultra‐definition 120‐Hz LCD TV using new driving scheme and advanced Super PVA technology

Abstract— An ultra‐definition (UD or 3840 × 2160) resolution 82‐in. product with 120‐Hz high‐frame‐rate driving has been developed for LCD‐TV applications. The resolution increase from full HD to UD greatly reduces the available charging time. This problem has been overcome by employing a half‐gate two‐data‐line design (hG‐2D) for Super PVA pixels. Additionally, cost‐effective single‐bank driving has been achieved by adopting a vertical‐quarter‐partitioned (VQP) driving scheme. A viewing angle of 180°, contrast ratio of 2200:1, and brightness of 550 nits have been achieved while maintaining all of the other advantages of the Super‐PVA structure.     

Discharge diagnosis of high Xe concentration and high‐γ protective layer in PDPs

Abstract— The high‐Xe‐concentration and high‐γ (ion‐induced secondary‐electron emission coefficient) protective layer have been diagnosed from both experimentation and simulation. The experimental results show that there is a great increase in luminance and luminous efficacy, while the breakdown voltage decreases in the high‐Xe and high‐γ discharge. In the high‐Xe discharge, the great increase in VUV radiation mainly results from an increase in excimer VUV emission. The application of high‐Xe concentration can greatly increase the luminous efficacy, while the high‐γ protective layer can promote it further. Considering that the total discharge efficiency can be divided into the electron heating efficiency, the Xe excitation efficiency, and the VUV radiation efficiency, both the electron heating efficiency and Xe excitation efficiency increased for a high‐Xe discharge; while for a high‐γ discharge, the increase in electron heating efficiency contributes to the improvement in discharge efficiency.     

A 25‐in. SMPDP with fine pitch and high resolution

Abstract— A 25‐in. SMPDP with fine pitch and high resolution has recently been developed as a succession of the 34‐in. SMPDP, which had been exhibited at ASID '04. SMPDP was regarded as a hopeful low‐cost PDP solution. The new pitch size of 0.66 mm realized an SVGA resolution on this 25‐in. SMPDP, and it also promises HDTV‐resolution compatibility for a 42‐in. SMPDP. The discharge cell has been re‐designed and the delta‐type arrangement of discharge cells has been applied, which provides more display area and facilitates the panel fabrication as well. Other modifications, such as the bus‐electrode structure and the alternatives of the glass material for substrates, have been tested. A peak luminance of 500 cd/m² and a total power consumption of 100 W has been achieved for the 25‐in. SMPDP sample.     

Fabrication of a 7.6‐in.‐diagonal prototype ballistic electron surface‐emitting display on a glass substrate

Abstract— A prototype ballistic electron surface‐emitting display (BSD) was fabricated on a TFT or PDP glass substrate by using a low‐temperature process. A 84 × 63‐pixel, 7.6‐in.‐diagonal full‐color BSD shows excellent performance, comparable to the previously reported 2.6‐in. model. This result demonstrates the strong possibility of large‐panel BSDs.     

Development of a 42‐in. 2‐D/3‐D switchable display using multi‐view technology for public‐information‐display applications

Abstract— A 42‐in. 2‐D/3‐D switchable display operating in a parallax‐barrier‐type system consisting of liquid‐crystal displays (LCDs) has been developed. The system displays 2‐D images in full resolution, without any degradation to the original 2‐D images, and 3‐D autostereoscopic images with resolutions higher than SVGA with wide viewing zones electrically controlled by the parallax‐barrier system. The system is intended for use in public‐information displays (PIDs), a booming field, and as displays for gaming, medical, and simulation applications.