Passively addressed FLC display possessing an inherent gray scale and memory

Abstract— A passively addressed 64 × 64 ferroelectric liquid‐crystal display (FLCD) has been developed. The display matrix has a 33 × 33 mm² aperture, and the FLC layer thickness is 5.2 ± 0.2 μm. The display device operates with a frame frequency of 30 Hz (at V_row = ±18 V, V_col = ±9 V, T = 23°C), generating a continuous gray scale which can be memorized for more than 10 days after the driving voltage is switched off. A new approach for multiplex electronic addressing of the FLCD gray scale is proposed. The conditions of the hysteresis‐free gray‐scale generation for multiplex addressing and the gray‐scale memorization after the voltage is switched off, as well as the time steadiness of memorized images, are considered.     

A 5‐in. flexible ferroelectric liquid‐crystal display driven by organic thin‐film transistors

Abstract— An organic thin‐film‐transistor (OTFT) driven color flexible ferroelectric‐liquid‐crystal (FLC) display with 160 × 120 pixels and a resolution of 50 ppi has been developed. The flexible FLC was fabricated on a pentacene‐OTFT array using printing and lamination techniques. To drive the display at a fast driving speed, an OTFT was developed with a short channel length having a large current output. The fabricated OTFT array with a channel length of 5 μm exhibits a carrier mobility of 0.3 cm²/V‐sec and an ON/OFF ratio of over 10⁷ at a low drain voltage of ?6 V. A field‐sequential‐color system with a flexible backlight unit was also developed and used to drive the display. Color moving images were successively shown on the 5‐in. display using an active‐matrix driving technique of the OTFT.     

Active matrix monolithic micro‐LED full‐color micro‐display

An active matrix monolithic micro‐LED full‐color micro‐display with a pixel density of 317 ppi is demonstrated. Starting from large‐scale and low‐cost GaN‐on‐Si epilayers, monolithic 64 × 36 blue micro‐LED arrays are fabricated and further transformed to full‐color micro‐displays by applying a photo‐patternable color conversion layer. This full‐color fabrication scheme shows feasible manufacturability, suggesting a potential for volume production of micro‐LED full‐color micro‐display.     

Electro‐optical parameters of FLC layers stabilized by a typical polymer net

Abstract— A typical polymer net with microcells of different sizes (from 25 × 25 to 200 × 200 μm) was formed by using a lithographic process, both on glass and flexible polymeric substrates. To investigate the influence of polymeric walls on FLC‐display cell operation, the typical electro‐optical parameters of FLC layers — light transmission and scattering, optical contrast ratio and response time — were measured under different conditions, such as display cell preparation and processing, driving voltage, microcell dimensions, and temperature.     

Active‐matrix organic light‐emitting displays employing two thin‐film‐transistor a‐Si:H pixels on flexible stainless‐steel foil

Abstract— An active‐matrix organic light‐emitting diode (AMOLED) display driven by hydrogenated amorphous‐silicon thin‐film transistors (a‐Si:H TFTs) on flexible, stainless‐steel foil was demonstrated. The 2‐TFT voltage‐programmed pixel circuits were fabricated using a standard a‐Si:H process at maximum temperature of 280°C in a bottom‐gate staggered source‐drain geometry. The 70‐ppi monochrome display consists of (48 × 4) × 48 subpixels of 92 ×369 μm each, with an aperture ratio of 48%. The a‐Si:H TFT pixel circuits drive top‐emitting green electrophosphorescent OLEDs to a peak luminance of 2000 cd/m².     

High‐resolution and high‐brightness full‐colour “Silicon Display” for augmented and mixed reality

High‐brightness micro‐LED display bonded onto silicon backplane has been successfully demonstrated. The 0.38‐inch full‐colour active matrix LED microdisplay system consists of 352 × 198 pixels. Each pixel is 24 μm square composed of red, green, and blue (RGB) subpixels corresponding to a pixel resolution of 1053 ppi. Quantum‐dot materials are formed on III‐nitride blue micro‐LED array to convert blue light into red and green for full‐colour operation. We have confirmed that this microdisplay, which we call “Silicon Display” has wide colour gamut exceeding 120% of sRGB. We describe the advantage of this colour‐converting approach for the full‐colour micro‐LEDs. Progress toward higher resolution is also described. Brightness of more than 30 000 cd/m² has been confirmed at a driving current density of 4 A/cm² for 3000 ppi blue monochrome micro‐LED prepared for full‐colour Silicon Display. We believe our “Silicon Display” is ideally suited for near‐to‐eye displays for augmented and mixed reality.     

Active‐matrix organic light‐emitting diode using inverse‐staggered poly‐Si TFTs with a center‐offset gated structure

Abstract— A low‐cost active‐matrix backplane using non‐laser polycrystalline silicon (poly‐Si) having inverse‐staggered TFTs with amorphous‐silicon (a‐Si) n⁺ contacts has been developed. The thin‐film transistors (TFTs) have a center‐offset gated structure to reduce the leakage current without scarifying the ON‐currents. The leakage current of the center‐offset TFTs at Vg = ?10 V is two orders of magnitude lower than those of the non‐offset TFTs. The center‐offset length of the TFTs was 3 μm for both the switching and driving TFTs. A 2.2‐in. QQVGA (1 60 × 1 20) active‐matrix organic light‐emitting‐diode (AMOLED) display was demonstrated using conventional 2T + 1C pixel circuits.     

Digital lithographic processing for large‐area electronics

Abstract— A non‐contact jet‐printed mask‐patterning process is described. By combining digital imaging with jet printing, digital lithography was used to pattern a‐Si:H‐based electronics on glass and plastic substrates in place of conventional photolithography. This digital lithographic process is capable of layer‐to‐layer registration of ±5 μm using electronic mask files that are directly jet printed onto a surface. Aminimum feature size of 50 μm was used to create 180 × 180 element backplanes having 75‐dpi resolution for display and image‐sensor applications. By using a secondary mask process, the minimum feature size can be reduced down to ～15 μm for fabrication of short‐channel thin‐film transistors. The same process was also used to pattern black‐matrix wells in fabricating color‐filter top plates in LCD panels.     

In‐pixel temperature sensor for high‐luminance active matrix micro‐light‐emitting diode display using low‐temperature polycrystalline silicon and oxide thin‐film‐transistors

We propose an in‐pixel temperature sensor using low‐temperature polycrystalline silicon and oxide (LTPO) thin‐film transistor (TFTs) for high‐luminance active matrix (AM) micro‐light‐emitting diode (LED) displays. By taking advantage of the different off‐current characteristics of p‐type LTPS TFTs and n‐type a‐IGZO TFTs under temperature change, we designed and fabricated a temperature sensor consists of only LTPO TFTs without additional sensing component or material. The fabricated sensor exhibits excellent temperature sensitivity of up to 71.8 mV/°C. In addition, a 64 × 64 temperature sensor array with 3T sensing pixel and integrated gate driver has also been fabricated, which demonstrates potential approach for maxing out the performance of high‐luminance AM micro‐LED display with real‐time in‐pixel temperature monitoring.     

Azo‐dye aligning layers for liquid‐crystal cells

Abstract— The photo‐induced alignment of liquid crystal onto a photochemical stable azo‐dye film was studied for liquid‐crystal display (LCD) applications. The photo‐aligning of azo dye takes place due to the pure reorientation of the molecular absorption oscillators perpendicular to the UV‐light polarization. The order parameters S = ?0.4 (80% of the maximum absolute value S_m = ?0.5) was measured at a wavelength of 372 nm from the polarized absorption spectra. The temperature‐stable pretilt angle of 5.3° was obtained by a two‐step exposure of azo‐dye film using normally incident polarized light followed by oblique non‐polarized light. The azimuthal anchoring energy of the photo‐aligned substrate was A_? > 10^?4 J/m², which is of the same magnitude as the anchoring of the rubbed PI layer. The VHR value of the photo‐aligned LC cell was also found to be very high (98–99%) at room temperature and more than 95% at T=80°C. The thermal stability of the photo‐aligned azo‐dye layers is sufficiently high, while UV stability has to be improved, _e.g., by polymerization. The new LCD aligning technology based on photochemical stable azo‐dye layers is envisaged.     

Development of 8‐in. oxide‐TFT‐driven flexible AMOLED display using high‐performance red phosphorescent OLED

An 8‐in. flexible active‐matrix organic light‐emitting diode (AMOLED) display driven by oxide thin‐film transistors (TFTs) has been developed. In‐Ga‐Zn‐O (IGZO)‐TFTs used as driving devices were fabricated directly on a plastic film at a low temperature below 200 °C. To form a SiO_x layer for use as the gate insulator of the TFTs, direct current pulse sputtering was used for the deposition at a low temperature. The fabricated TFT shows a good transfer characteristic and enough carrier mobility to drive OLED displays with Video Graphic Array pixels. A solution‐processable photo‐sensitive polymer was also used as a passivation layer of the TFTs. Furthermore, a high‐performance phosphorescent OLED was developed as a red‐light‐emitting device. Both lower power consumption and longer lifetime were achieved in the OLED, which used an efficient energy transfer from the host material to the guest material in the emission layer. By assembling these technologies, a flexible AMOLED display was fabricated on the plastic film. We obtained a clear and uniform moving color image on the display.     

Flexible electronic‐paper active‐matrix displays

Abstract— A100‐μm‐thick 320 × 240‐pixel active‐matrix display integrated into a functional‐device prototype is presented. The active matrix is composed of alternating layers of organic materials and gold. A six‐mask photolithographic process is used. An electrophoretic electronic imaging film is laminated on top of the active matrix. The display is bendable to a radius of 7.5 mm for more than 30,000 repetitions.     

A quick‐response liquid‐powder display (QR‐LPD®) with plastic substrate

Abstract— Paper‐like displays as thin as 290 μm have been developed using QR‐LPD technology. We fabricated two types of displays. One is a dot‐matrix type with a 160 × 160 array of pixels and a 3.1‐in.‐diagonal viewable image size. The other is a segmented type for clock use. Each display has a paper‐like appearance and exhibits high contrast. Plastic substrates with a thickness of 120 μm were used, resulting in flexible displays that can be bent up to a radius of curvature of 20 mm.     

Optimal design of optical performance of reflective ferroelectric‐ and anti‐ferroelectric liquid‐crystal displays

Abstract— In an in‐plane optical geometry, such that the average optic axis lies on the plane parallel to both substrates, the optical properties of a reflective ferroelectric liquid‐crystal (FLC) or antiferroelectric liquid‐crystal (AFLC) cell were studied within the framework of the 2 × 2 Jones matrix formalism. To obtain good achromaticity and high brightness, the cell parameters such as the molecular rotation angle and the effective phase retardation of the AFLC layer were optimized. The device performances of the AFLC cell were experimentally demonstrated in this geometry.     

Photo‐aligned photonic ferroelectric liquid crystal fibers

Preliminary studies of photonic crystal fibers (PCFs) partially infiltrated with photo‐aligned ferroelectric liquid crystals (FLCs) under the influence of external electric field are reported. The proper alignment of the FLC molecules is achieved by generating a photo‐aligning layer on the inner side of the PCF microcavities. The sulfonic azo dye, which is used as an alignment layer, offers a variable anchoring energy depending on the irradiation energy, and thus, a good control on the FLC alignment inside microchannels is possible. Moreover, a state of polarization of the light being guided inside the PCF infiltrated selectively with FLC changes under the influence of external electric field.     

Solution‐processed oxide semiconductors for low‐cost and high‐performance thin‐film transistors and fabrication of organic light‐emitting‐diode displays

Abstract— High‐performance solution‐processed oxide‐semiconductor (OS) thin‐film transistors (TFTs) and their application to a TFT backplane for active‐matrix organic light‐emitting‐diode (AMOLED) displays are reported. For this work, bottom‐gated TFTs having spin‐coated amorphous In‐Zn‐O (IZO) active layers formed at 450°C have been fabricated. A mobility (μ) as high as 5.0 cm²/V‐sec, ?0.5 V of threshold voltage (VT), 0.7 V/dec of subthreshold swing (SS), and 6.9 × 10⁸ of on‐off current ratio were obtained by using an etch‐stopper (ES) structure TFT. TFTs exhibited uniform characteristics within 150 × 150‐mm² substrates. Based on these results, a 2.2‐in. AMOLED display driven by spin‐coated IZO TFTs have also been fabricated. In order to investigate operation instability, a negative‐bias‐temperature‐stress (NBTS) test was carried out at 60°C in ambient air. The IZO‐TFT showed ?2.5 V of threshold‐voltage shift (ΔVT) after 10,800 sec of stress time, comparable with the level (ΔVT = ?1.96 V) of conventional vacuum‐deposited a‐Si TFTs. Also, other issues regarding solution‐processed OS technology, including the instability, lowering process temperature, and printable devices are discussed.     

Amorphous‐oxide TFT backplane for large‐sized AMOLED TVs

Abstract— Amorphous‐oxide thin‐film‐transistor (TFT) arrays have been developed as TFT backplanes for large‐sized active‐matrix organic light‐emitting‐diode (AMOLED) displays. An amorphous‐IGZO (indium gallium zinc oxide) bottom‐gate TFT with an etch‐stop layer (ESL) delivered excel lent electrical performance with a field‐effect mobility of 21 cm²/V‐sec, an on/off ratio of >10⁸, and a subthreshold slope (SS) of 0.29 V/dec. Also, a new pixel circuit for AMOLED displays based on amorphous‐oxide semiconductor TFTs is proposed. The circuit consists of four switching TFTs and one driving TFT. The circuit simulation results showed that the new pixel circuit has better performance than conventional threshold‐voltage (VTH) compensation pixel circuits, especially in the negative state. A full‐color 19‐in. AMOLED display with the new pixel circuit was fabricated, and the pixel circuit operation was verified in a 19‐in. AMOLED display. The AMOLED display with a‐IGZO TFT array is promising for large‐sized TV because a‐IGZO TFTs can provide a large‐sized backplane with excellent uniformity and device reliability.     

A silicon‐chip‐based light valve with reflective twisted‐nematic mode for high‐definition projectors

Crystalline‐silicon‐chip‐based reflective light valves are suitable for realizing high definition and bright liquid‐crystal projectors. We have developed an XGA (1025 × 769 pixels) silicon‐chip‐based light valve with a diagonal display area of 2.54 cm (1 in.). The reflective twisted‐nematic mode was examined by using the Jones matrix method as a display mode, and the normally white reflective twisted‐nematic mode was selected. This mode is suitable for a narrow cell gap, and a fast response time can be expected. In addition, the driving voltage of this mode is low and has good chromaticity with small retardation. The cell gap of the light valve is 2 μm. The cell gap support is made using spacer posts formed on the silicon chip with a photodefinable resin. The response time is 12 msec, including both rise and fall times. The contrast ratio is more than 1000 at 5 Vrms.     

High‐luminance 1.8‐mm‐pixel‐pitch CNT‐FED for ubiquitous color character displays

Abstract— A high‐luminance 1.8‐mm‐pixel‐pitch CNT‐FED for color character displays has been developed. The display panel has 32 × 256 color pixels, and the subpixel size is 0.6 × 1.8 mm. The display panel can provide good visibility when installed even in outdoor locations. The power consumption is low enough for the display to be battery driven. The practical application is the display of important messages regarding the evacuation from disaster areas, even under emergent no‐power conditions similar to the messages on vending machines.     

Flexible electronic‐paper active‐matrix displays

Abstract— A QVGA active‐matrix backplane was produced on a 25‐μm thin plastic substrate. A four‐mask photolithographic process was used. The insulator layer and the semiconductor layer were organic material processed from solution. This backplane was a combination of the electrophoretic display effects supplied by SiPix and E‐Ink Corp., resulting in electronic‐paper displays with a thickness of 150 and 100 μm, respectively; this is the world's thinnest active‐matrix display ever made.