基于MCCⅡ的三输入单输出二阶电流滤波器

提出了三输入单源通用电流滤波电路。该电路能实现二阶低通，高通带通，全通，陷波滤波功能，具有高输出阻抗，低无源灵敏度特性，电路中所有电阻，电容接地，适于集成。     

数字可编程的电流模式通用双二阶滤波器

本文提出了一种新的基于MOCCII的等电容和等电阻电流模式通用双二阶滤波器综合方法.通过对双二阶通用滤波传输函数进行分析将其分解成能用无损积分器实现的表达式,完成电路综合.该滤波电路包含4个有源器件、8个接地无源元件,通过控制数字可编程开关在输出端得到电流模式二阶低通、高通、带通、带阻和全通五种滤波功能.电路有很低无源灵敏度.文中对滤波器进行了PSPICE模拟验证.     

用第三代电流传送器设计n阶有源滤波器

提出了一种基于第三代电流传送器(CCIII)的电流模式n阶通用滤波器的设计方法,导出了设计公式,利用该方法可生成n阶高通、低通、带通滤波器,所产生的n阶滤波电路由n个CCIII+、2 n个无源元件构成。以二阶滤波器为例分析了高通、低通、带通滤波电路,结果显示各滤波电路的无源灵敏度和有源灵敏度都很低,以极点角频率106 ...     

电压模式通用双二阶滤波器的新实现

本文提出了采用第二代电流传送器CC Ⅱ+/-构成的电压模式三输入、单输出多功能通用双二阶滤波电路。此电路通过选择不同的输入信号,可输出端得到电压模式二阶低通、高通、带通、陷波和全通五种滤波功能。每种滤波功能的滤波器的固有角频率ωp和品质因素Qp可实现正交调节,所有滤波器都具有低的无源灵敏度,计算机仿真结果表明了通用滤波器电路的正确性和可行性。     

新颖的电压模式通用双二阶滤波器

提出了采用第二代电流传送器构成的电压模式三输入、单输出多功能通用双二阶滤波电路,该电路通过选择不同的输入信号,可在输出端得到电压模式二阶低通、高通、带通、陷波和全通五种滤波功能。每种滤波功能的滤波器的固有角频率ωｐ和品质因素Ｑｐ可实现正交调节,所有滤波器都具有低的无源和有源灵敏度。     

采用单个四端浮地零器的电压模式滤波器

文中提出了电压模式单ＦＴＦＮ滤波器新通用电路结构，它能实现二阶低通、高通、带通、全通（陷波）和一阶低通、高通、全通滤波功能。给出了二阶带通和一阶低通的ＰＳＰＩＣＥ仿真频响，进一步证实了理论分析的正确性，各滤波电路的增益与极点角频率（或品质因素）独立可调，且有低的无源灵敏度。     

差分式CMOS多功能电流模式滤波器

本文提出多端输出的CMOS电流加法器，在此基础上提出了新型差分式CMOS多功能电流模式滤波器的信号流图和电路。该滤波电路能同时产生二阶低通、带通、高通输出，并通过适当的连接能产生二阶带阻和全通滤波输出。对提出的滤波器截止频率为1MHz的电路进行了计算机PSPICE仿真。     

状态变量法型双二阶滤波器的CFA实现

本文提出了用电流反馈放大器（current-feedback amplifier,简称CFA）实现的电压模式状态变量法型双二阶滤波新电路，通过选择电路中的电阻参数，可分别实现二阶低通、高通、带通、带阻和全通滤波功能，计算机仿真实例进一步表明了理论分析的正确性。     

一种新颖的电压模式通用二阶CCII滤波器设计

提出了一种基于电流传送器的电压模式通用二阶滤波器电路。该电路由三个电流传送器（CCII＋／-）、两个电容、三个电阻构成，它能实现二阶低通、带通、高通、陷波、全通滤波函数。分析了该电路的电压传输函数及电路参数，并用PSPICE对该电路进行了仿真，仿真结果表明，该电路设计正确，电路结构简单，所用元器件少。     

采用MCCII实现的三输入单输出二阶通用滤波器

本文提出了一种新的基于MCCII(Modified Second-generation Current Conveyors)电流模式的三输入单输出的二阶通用滤波电路。该电路能通过三输入端不同的输入信号组合，即可在输出端实现二阶低通、高通、带通、带阻、全通滤波功能。此电路仅使用了二个MCCII器件、三个接地电阻和二个接地电容，具有源器件数目最少、输出阻抗高、无源和有源灵敏度低、滤波器特性参数均可独立调节等特点，且电路所有电阻、电容均接地，适于集成。PSPICE仿真结果进一步证明了理论分析的正确性。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.