基片温度对强流脉冲离子束烧蚀等离子体沉积类金刚石薄膜结构和性能的影响

利用强流脉冲离子束 (High intensitypulsedionbeam HIPIB)烧蚀等离子体技术在Si(1 0 0 )基体上沉积类金刚石 (Dia mond likecarbon DLC)薄膜 ,基片温度的变化范围从 2 5℃ (室温 )到 40 0℃。利用Raman谱、X射线光电子谱 (XPS)、X射线衍射(XRD)和原子力显微镜 (AFM)研究基片温度对DLC薄膜的化学结合状态、表面粗糙度、薄膜显微硬度和薄膜内应力的影响。根据XPS和Raman谱分析得出 ,基片温度低于 30 0℃时 ,sp3C杂化键的含量大约在 40 %左右 ;从 30 0℃开始发生sp3C向sp2 C的石墨化转变。随着沉积薄膜时基片温度的提高 ,DLC薄膜中sp3C的含量降低 ,由 2 5℃时 42 .5 %降到 40 0℃时 8.1 % ,XRD和AFM分析得出 ,随着基片温度的增加 ,DLC薄膜的表面粗糙度增大 ,薄膜的纳米显微硬度降低 ,摩擦系数提高 ,内应力降低。基片温度为 1 0 0℃时沉积的DLC薄膜的综合性能最好 ,纳米显微硬度 2 2GPa ,表面粗糙度为 0 75nm ,摩擦系数为 0 .1 1 0。     

基片温度对强流脉冲离子束烧蚀等离子体沉积类金刚石薄膜结构和性能的影响

利用强流脉冲离子柬(High-intensity pulsed ion beam-HIPIB)烧蚀等离子体技术在Si(100)基体上沉积类金刚石(Diamond-like carbon-DLC)薄膜，基片温度的变化范围从25℃(室温)到400℃。利用Raman谱、X射线光电子谱(XPS)、X射线衍射(XRD)和原子力显微镜(AFM)研究基片温度对DLC薄膜的化学结合状态、表面粗糙度、薄膜显微硬度和薄膜内应力的影响。根据XPS和Raman谱分析得出，基片温度低于300℃时，sp3C杂化键的含量大约在40％左右；从300℃开始发生sp3C向sp2C的石墨化转变。随着沉积薄膜时基片温度的提高，DLC薄膜中sp3C的含量降低，由25℃时42．5％降到400℃时8．1％，XRD和AFM分析得出，随着基片温度的增加，DLC薄膜的表面粗糙度增大，薄膜的纳米显微硬度降低，摩擦系数提高，内应力降低。基片温度为100℃时沉积的DLC薄膜的综合性能最好，纳米显微硬度22GPa，表面粗糙度为0．75nm，摩擦系数为0．110。     

RF-PECVD制备类金刚石膜的研究

采用RF-PECVD法在锗(Ge)基片上沉积类金刚石(DLC)薄膜,研究了气体流量和气压对沉积区域均匀性的影响,以及基片厚度与沉积时间的关系。用拉曼光谱(Raman)分析DLC膜的结构组成,用傅立叶红外光谱仪(IR)对DLC膜的透过率进行了测量。结果表明,在气体流量为50 sccm,气压为10 Pa,功率800 W条件下薄膜厚度均匀性可达2.1%,极值透过率达62%。     

靶电流对掺钨类金刚石膜的结构与摩擦学行为的影响EI北大核心

利用真空阴极电弧+磁控溅射+阳极层条形离子源制备了带梯度过渡层的掺钨类金刚石(DLC)膜,并研究了靶电流对掺钨DLC膜结构和性能的影响,结果表明:制备的掺钨DLC膜光滑致密,表面存在1~2μm的液滴。靶电流不大于3.5A时,随着靶电流的增加,掺钨DLC膜的钨含量逐渐增加,但sp3的含量基本不变;靶电流为5A时,制备的薄膜成分接近WC的理想化学计量比,薄膜中的sp3含量增加到48%。当靶电流不大于2A时,靶电流对掺钨DLC膜的显微硬度和摩擦系数影响较小;在高的靶电流条件下,掺钨DLC膜的显微硬度和摩擦系数随着靶电流的增加而明显增大。     

NiTi合金生物医用材料表面镀类金刚石薄膜的性能研究

用脉冲电弧离子镀技术在NiTi合金生物材料表面沉积了类金刚石(DLC)薄膜.研究分析结果表明制备的DLC薄膜是四面体非晶碳薄膜;随着DLC薄膜厚度的增加,薄膜的表面粗糙度增加,薄膜中sp3的含量减少;随着sp3含量的增加,薄膜的纳米硬度升高;划痕实验表明临界载荷大于0.9 N.研究得出与NiTi合金相比,DLC薄膜能够有效地降低摩擦系数和磨损.DLC薄膜的摩擦系数主要与薄膜的硬度及薄膜中sp3的含量有关,DLC薄膜的磨损主要是轻微的磨粒磨损及疲劳磨损.     

FCVA法制备的超薄类金刚石薄膜的结构分析

用真空阴极过滤电弧(Filtered Cathode Vacuum Arc,FCVA)法制备厚度分别为50 nm,30 nm,10 nm,5 nm,2 nm的类金刚石(DLC)薄膜,利用拉曼光谱和电子能量损失谱研究了薄膜的结构,分析了硬度和内应力的变化趋势。结果表明,随着薄膜厚度的减小,可见光拉曼光谱高斯分解的G峰位置向低波数方向移动,D峰和G峰强度之比Id/Ig不断增大,G峰面积与D峰面积之比Ag/Ad减小;说明随着薄膜厚度的减小,DLC薄膜中的sp3键含量减少,有序化的sp2团簇增加。电子能量损失谱的结果也表明薄膜厚度的减小会引起薄膜中sp3键含量的减少。当薄膜的厚度由50 nm变为30 nm时,薄膜硬度由53.85 GPa减小为39.64 GPa,内应力由4.63 GPa降低为3.47 GPa,随着厚度降低,薄膜的硬度和内应力呈下降趋势。     

不锈钢表面沉积DLC膜的结构和性能

应用线性离子束复合磁控溅射技术在不锈钢和硅片基体上制备DLC膜,研究了基体偏压和过渡层的厚度和结构对DLC薄膜结构和性能的影响。结果表明,在过渡层相同偏压为-200 V的条件下,薄膜中的sp3键含量更低,但是薄膜结构致密性的提高使其硬度和膜基结合力反而提高;在偏压为-200V的条件下,随着过渡层厚度及层数的增加DLC薄膜中sp3含量均降低,同时过渡层和多层薄膜的硬度减小;在偏压为-100V条件下,过渡层厚度和层数对DLC薄膜sp3的含量没有明显的影响。当过渡层厚度为1.7μm、结构为Cr/CrC时,在11Cr17不锈钢基体上可制备出厚度为4.92μm、硬度为29.4 GPa、摩擦系数小于0.1、结合力高于70 N综合性能最佳的DLC薄膜。     

中频磁控溅射沉积DLC/TiAlN复合薄膜的结构与性能研究

采用中频非平衡磁控溅射沉积工艺,并施加霍尔离子源辅助沉积,在高速钢W18Cr4V及单晶硅基体上制备了梯度过渡的DIE/TiAlN复合薄膜.利用扫描电镜(SEM)、X射线光电子能谱仪(XPS)、显微硬度计、摩擦磨损仪等分析检测仪器对DLC/TiAlN复合薄膜的表面形貌、晶体结构、显微硬度、耐磨性等性能进行了检测分析.实验及分析结果表明:DLC/TrAlN薄膜平均膜厚为1.1μm,由于薄膜中的Al含量较多,使得复合薄膜的表面比DLC薄膜的表面要粗糙一些;通过对复合薄膜表层的XPS分析可知,ID/IG为2.63.由XPS深层剖析可知,DLC/TiAlN薄膜表层结构与DLC薄膜基本相同,里层则与TiAlN薄膜相似.在梯度过渡膜中,复合膜层之间的界面呈现为渐变过程,结合的非常好.DLC/TiAlN薄膜的显微硬度为2030 HV左右.与DLC薄膜显微硬度接近,低于TiAlN薄膜的显微硬度.但是DLC/TiAlN薄膜的耐磨性要好于TiAlN薄膜和DLC薄膜;DLC/TiAlN薄膜的耐腐蚀性能略好于DLC薄膜.     

RF-PECVD工艺参数对DLC膜结构及性能的影响

用射频等离子增强化学气相沉积(RF-PECVD)法,在常温下实现在载玻片和单晶硅基片上沉积类金刚石(DLC)薄膜。研究结果表明,工艺参数(功率密度、氩气分压、丁烷分压和极间距)的变化对薄膜硬度和透过率影响较大。薄膜硬度随着功率密度的增加而增加;随着氩气分压或丁烷分压的增加,薄膜硬度降低。薄膜的透过率随着氩气分压先增后减;丁烷分压为0.42～0.7Pa或板极间距为4.5～8cm时,薄膜的透过率均达到90%。     

超快激光加工的微结构界面对DLC薄膜磨损性能影响研究

采用飞秒超快激光在GCr15轴承钢基体表面上制备了条纹、方格结构,并研究对类金刚石(DLC)薄膜结构、结合强度和耐磨性能影响。利用Raman光谱、扫描电镜、白光干涉形貌仪分析薄膜化学结构及形貌,利用划痕实验仪及SRV磨损试验机对薄膜结合强度、磨损性能进行测定。研究表明,功率密度0.96、400 mm/min、加工间距150~350μm条件下的获得的微结构对DLC薄膜sp3键含量有提升作用,并影响DLC薄膜的结合强度和耐磨性。在间距250μm条纹结构上的DLC薄膜具有最佳的性能,硬度约16 GPa,最高结合力极限载荷52 N,面-面接触、20 N载荷下磨损率1.35×10~(-6)mm~(-3)/N·m,耐磨性与无微结构DLC相比,最高可提高50倍。     

铜合金垫片表面类金刚石薄膜的制备及其摩擦学性能研究

采用物理气相沉积工艺在黄铜H62垫片上制备了DLC薄膜,对DLC薄膜进行了拉曼光谱分析和截面形貌观察,测试了薄膜厚度、纳米硬度和结合力,进行了磨擦磨损试验,分析了薄膜的减摩耐磨性能.结果 表明,在H62铜合金垫片制备碳膜为DLC薄膜,薄膜总厚约2.31 μm,底层厚约0.49 μm.薄膜纳米硬度22.1GPa,薄膜与基...     

Optimisation of diamond-like carbon films by unbalanced magnetron sputtering for infrared transmission enhancement

Diamond-like carbon (DLC) films have potential applications in infrared transmission enhancement. Reducing or eliminating mechanical stress and optical absorption of DLC is important in such applications because relatively thick films are necessary. In this work, DLC was deposited in an unbalanced magnetron sputtering (UBMS) system. Mechanical and optical properties of the DLC films were analysed. Thick DLC films were deposited which satisfied applications for the infrared windows at 3–5 and 8–10 μm. At optimised conditions, the stress in the DLC films decreased with increasing thickness, approaching 1 GPa. For single side DLC coated silicon substrate, about 69% transmittance was achieved at wavelengths near 5 μm, close to the theoretical value for non-absorbing DLC material. Other properties such as surface roughness, wetting angle, and stability were also studied, which showed that the DLC films produced in the UBMS system were excellent for infrared transmission enhancement applications in tough environments.     

Dependence of field-emission threshold in diamond-like carbon films grown by various techniques

In this paper, we report field-emission measurements from ∼0.5-μm-thick hydrogenated amorphous carbon (diamond-like carbon (DLC)) films. These films were grown by a variety of easily implementable plasma-enhanced chemical vapor deposition (PECVD) based techniques and also by a method that uses a saddle-field fast atom beam source. Field-emission behavior in these materials has been discussed in light of residual stress, hardness, optical band gap, and characteristic energy of band tails (Urbach energy). Onset emission-fields as low as ∼6 V/μm, together with low residual stress of 0.25 GPa, hardness of 17.5 GPa, optical band gap of 1.5 eV, and Urbach energy of 165 meV, have been obtained in DLC films grown by pulsed-PECVD at 13.56 MHz. DLC films of comparable quality could also be grown using a saddle-field fast atom beam source, which operates on modest dc power supply and with no heated filaments or magnets.     

类金刚石碳膜的复合硬度与本征硬度的研究

在综述现有的测量薄膜（涂层）材料本征硬度方法及模型的基础上，采用超显微硬度仪对不同基体经不同工艺条件沉积的类金刚石碳昨合硬度进行了测量，并借助有限元模型得到的经验公式对测量数据进行拟合处理，得出了各种类金刚石碳膜的本征硬度。硬质合金基体上类金刚石膜本度为０２ＧＰａ，硅基体上经不同工艺条件沉积的类金刚石碳膜本征硬度在２０－３０ＧＰａ范围。在对膜／基得合体系进行Ｍｅｙｅｒ定律修正的基础上，首次提出了一     

Influence of bowl shaped substrate holder on growth of polymeric DLC film in a microwave plasma CVD reactor

The properties of diamond like carbon (DLC) films grown in modified microwave plasma CVD reactor is presented in this paper. By using bowl shaped steel substrate holder in a MW plasma CVD reactor (without ECR), films have been grown at relatively high pressure (20 Torr) and at low temperature (without heating). The input microwave power was about 300 W. Earlier, under the same growth conditions, no deposition was achieved when flat molybdenum/steel substrate holders were used. In this study, two different designs of bowl shaped steel substrate holder at different bias have been experimented. Raman spectra confirm the DLC characteristics of the films. FTIR results indicate that the carbon is bonded in the sp ³ form with hydrogen, and this characteristic is more pronounced when smaller holder is used. UV-visible spectra show high visible transmittance (~85%) for films grown in both the holders. The nanoindentation hardness of the films have a wide range, about 4–16 GPa. Field emission scanning electron microscope (FESEM) images reveal that the films have featureless and smooth surface morphology. These films are polymeric in nature with moderately high hardness, which may be useful as anti-scratch and anti-corrosive coatings.     

Mid-frequency PECVD of a-SiCN:H films and their structural,mechanical and electrical properties

The mid-frequency pulsed plasma enhanced chemical vapour deposition (PECVD) of hydrogenated amorphous silicon carbonitride (a-SiCN:H) was investigated to prove the suitability of these films as a mechanical stiff insulator for the integration of piezoelectric fibres in microstructured aluminium plates. For the a-SiCN:H deposition trimethylsilane (SiH(CH₃)_3; 3MS) and nitrogen in mixture with argon were used. The films were characterised regarding their deposition rate, elastic modulus and hardness (nanoindentation), mechanical stress, elemental composition (ERDA) and electrical insulating properties.The breakdown field strength of μm-thick a-SiCN:H films is in the range of 2–4 MV/cm. At pressures of a few Pa the deposition rate reached values up to 6 μm/h. It is limited by the power absorption in the 100 kHz bipolar-pulsed discharge. Varying the pressure from 2 Pa to 15 Pa has only little influence on the film composition. With increasing pressure during deposition the elastic modulus of the films decreases from about 146 GPa to 100 GPa and the compressive film stress from 1.2 GPa to 0.55 GPa. By reducing the 3MS flow rate from 50 sccm to 10 sccm (at 8 Pa deposition pressure), the carbon and the hydrogen concentrations in the films were reduced by about 10 at. %. The Si-content is only slightly reduced but the N-content is more than tripled. In contrast, the changes in the mechanical film properties are comparatively small. The mechanical properties of a-SiCN:H films are not simply correlated to the stoichiometry but are rather controlled by the ion bombardment during growth.     

类金刚石碳膜的结构特性与耐磨性能

采用双离子束增强沉积（IBED）和离子束直接沉积（IBD）技术，在CHn 能量为200~550eV和3～25keV范围内沉积的类金刚石薄膜具有光滑平坦的表面和非晶结构。X光电子谱和Raman光谱分析、以及显微硬度测量的结果表明，随着轰击离子能量的降低，薄膜的金刚石特性增强；在200～550eV能量范围内制备的DLC膜具有明显的sp3键特征和很高的显微硬度。沉积在GCr15钢上的DLC膜与GCr15钢的摩擦学对比实验表明，DLC膜具有很低的摩擦系数、比磨损率和高的抗磨损指数，这证明采用上述两种方法制备的DLC膜具有优良的抗摩擦磨损性能。     

Coating of diamond-like carbon nanofilm on alumina by microwave plasma enhanced chemical vapor deposition process

Diamond-like carbon (DLC) nanofilms with thickness varied from under one hundred to a few hundred nanometers have been successfully deposited on alumina substrates by microwave plasma enhanced chemical vapor deposition (MW-PECVD) process. To obtain dense continuous DLC nanofilm coating over the entire sample surface, alumina substrates were pre-treated to enhance the nucleation density. Raman spectra of DLC films on samples showed distinct diamond peak at around 1332 cm(-1), and the broad band of amorphous carbon phase at around 1550 cm(-1). Full width at half maximum height (FWHM) values indicated good formation of diamond phase in all films. The result of nano-indentation test show that the hardness of alumina samples increase from 7.3 +/- 2.0 GPa in uncoated samples to 15.8 +/- 4.5-52.2 +/- 2.1 GPa in samples coated with DLC depending on the process conditions. It is observed that the hardness values are still in good range although the thickness of the films is less than a hundred nanometer.     

柔性PET衬底上低温制备TZO透明导电薄膜

利用直流磁控溅射法,在室温水冷柔性PET衬底上成功制备出了掺钛氧化锌透明导电薄膜(TZO)。通过X射线衍射和扫描电镜等表征方法对薄膜结构和特性进行测试分析,研究了靶与衬底之间的距离(靶基距)对TZO薄膜表面形貌、结构、力学、电学和光学性能的影响。结果表明,实验制备的柔性TZO透明导电薄膜为具有c轴择优取向的六角纤锌矿结构的多晶薄膜;靶基距对PET衬底上的柔性TZO薄膜的性能有较大的影响。随着靶基距从42 mm增大到70 mm,薄膜的生长速率由22.46 nm/min降低到6.92 nm/min;薄膜的电阻率先由55.99×10-4Ω.cm快速减小到5.34×10-4Ω.cm后略有增大并趋稳,5.34×10-4Ω.cm为最小电阻率,其靶基距为52 mm;70 mm靶基距时样品薄膜应力最小,为0.4914 GPa;所有样品的可见光区平均透过率都高于90.97%。     

Structure and Mechanical Performance of Nitrogen Doped Diamond-like Carbon Films

Nitrogen doped diamond-like carbon （DLC：N） films were prepared by electron cyclotron resonance chemical vapor deposition （ECR-CVD） on polycrystalline Si chips. Film thickness is about 50 nm. Auger electron spectroscopy （AES） was used to evaluate nitrogen content, and increasing N2 flow improved N content from 0 to 7.6%. Raman and X-ray photoelectron spectroscopy （XPS） analysis results reveal CN-sp^3C and N-sp^2C structure. With increasing the N2 flow, sp^3C decreases from 73.74% down to 42.66%, and so does N-sp^3C from 68.04% down to 20.23%. The hardness decreases from 29.18 GPa down to 19.74 GPa, and the Young＇s modulus from 193.03 GPa down to 144.52 GPa.