真空蒸镀钝化太安(PETN)薄膜的研究

对真空蒸镀钝化太安 (PETN)炸药薄膜进行了研究。分析了真空度、蒸镀温度、蒸发速率、基片表面状态等因素对形成薄膜的影响。得出了适宜蒸镀的真空条件、最佳蒸镀温度和蒸发速率 ;提出了增加薄膜和基片附着力的方法。     

真空蒸镀钝化太安（PETN）薄膜的研究

对真空蒸镀钝化太安(PETN)炸药薄膜进行了研究。分析了真空度、蒸镀温度、蒸发速率、基片表面状态等因素对形成薄膜的影响。得出了适宜蒸镀的真空条件、最佳蒸镀温度和蒸发速率；提出了增加薄膜和基片附着力的方法。     

真空蒸镀氟化镁增透膜的厚度与均匀性控制

基于光学增透膜与真空蒸发镀膜的基本原理,从MgF2原料状态、原料蒸镀质量、蒸发源与基片间距等方面,研究了热电阻和电子束蒸镀的MgF2薄膜厚度与其均匀性的控制工艺,以制备出高效的MgF2增透膜。结果表明:对于颗粒度较小或熔点较低的原料,热电阻比电子束蒸镀更易控制,并可避免原料污染;原料实际蒸镀质量与膜厚呈较好的线性关系;实际蒸镀质量相同的多晶颗粒与粉末状原料相比,前者蒸镀膜更厚;基片置于旋转工转盘中心比其侧部区域蒸镀膜更厚、均匀性更好。最后利用旋转球面夹具的小平面源蒸发模型很好地解释了上述实验结果。     

碲化锡材料的制备及其特性研究

用Bridgman法合成SnTe晶体,并用X射线衍射仪测试其显微结构,发现其晶格常数比标准值略小.以制备的晶体为原料用真空蒸镀法制备了银灰色SnTe多晶薄膜,并对薄膜的显微结构、伏安特性及表面形貌进行了研究.结果发现,薄膜上晶粒的生长有一定择优取向,其伏安特性曲线有突变点,通电后薄膜表面的原子形成了团簇.     

真空镀膜技术

由真空蒸镀所获得的薄膜,是实现部件超小型化的有力手段之一,但在真空中的薄膜表面,易受剩余气体成分,分压强,蒸发温度和时间的影响以及蒸发源的形式,温度等影响而产生变化。另外,如何既经济又有效地进行电连接和涂敷保护层,在提高性能上也是一种重要问题。因此,除非常稳定地控制蒸镀条件提高工作效率以外,大量生产能保持一定质量水平的产品,就显得非常重要了。本文介绍制备薄膜电子元件的蒸镀技术和采用的多级蒸镀装置概况。 真空抽气装置 在分子运动服从麦克斯韦分布定律的前提下,碰撞于蒸镀膜的分子数N为: /厘米2·秒·乇 式中; P:压强(…     

退火温度对金属催化四面体非晶碳转变为石墨烯过程的影响

设计了金属催化剂Ni/四面体非晶碳(ta-C)/基底三层结构,使用磁过滤阴极真空电弧设备制备了ta-C薄膜,用电子束蒸镀技术制备Ni薄膜,并对其进行快速热处理调控非晶碳转变石墨烯的过程,重点研究了热处理温度对石墨烯生长的影响。结果表明,沉积态的ta-C和Ni层均表面平整、均匀致密,其中Ni薄膜呈(111)晶面择优取向生长,为石墨烯的高质量生长提供了条件。同时,退火温度显著影响了非晶碳的石墨烯转变,当退火温度高于400℃时Ni表面能生成多层石墨烯,在500℃保温15 min可制备出质量较高的多层石墨烯。     

第二十一讲真空卷绕镀膜

(接2020年第6期86页) 2.2.1 原理 电阻加热蒸发镀膜原理如图3所示.将卷筒状的待镀薄膜基材装在真空蒸镀机的放卷辊上,薄膜穿过导向辊和镀膜冷鼓卷绕在收卷辊上.抽真空,使蒸镀室中的真空度达到4×10-2Pa以上,加热蒸发舟或蒸发坩埚使高纯度的金属或化合物在气化温度下融化并蒸发.启动薄膜卷绕系统,当薄膜运行速度达...     

电子束与电阻复合蒸发法制备Zr-Cu非晶薄膜及性能表征

主要采用电子束蒸发与电阻蒸发复合镀膜系统制备Zr-Cu二元非晶薄膜,衬底基板无冷却装置。通过X射线衍射仪(XRD)、场发射透射电子显微镜(FE-TEM)、场发射扫描电子显微镜(FE-SEM)、微控四探针测量仪等仪器,系统地研究了样品沉积时间对薄膜厚度、微观结构、表面形貌以及电学性能的影响,另外还分析了与磁控溅射制备的Zr-Cu非晶样品的区别。结果显示,该复合镀膜技术制备的ZrxCu100-x非晶薄膜玻璃形成成分范围为x=30~85;薄膜的结构与性能对沉积时间比较敏感。样品随沉积时间的延长从非晶结构逐渐向非晶纳米晶复合结构转变;相比磁控溅射制备的薄膜样品,复合蒸发法制备的薄膜表面呈现较大尺寸的"团簇"形貌;样品的电阻率和方块电阻随沉积时间的延长逐渐减小。     

Al／PET和Cu／PET蒸镀膜包装材料附着力及微观结构的研究

利用真空镀方法在聚酯(PET)薄膜上沉积Al(Cu),制得Al/PET(Cu/PET)复合薄膜包装材料。用直接牵引拉伸法和划痕法测定这两种薄膜的附着力,获得其附着力与蒸镀条件(真空度、温度、蒸发时间)的规律;用扫描电镜(SEM)观察镀层微观结构,得到镀层晶粒度与蒸镀条件的对应关系;用金相显微镜测量镀层厚度,获得镀层厚度与时间的对应关系。     

8—羟基喹啉铝发光特性及老化的研究

８－羟基喹啉铝（Ｓｌｑ３）非晶薄膜发射峰同多晶粉末的发射峰启亮边的波长相同，但是非晶薄膜的发射峰比多晶粉末的发射峰红移了２０ｎｍ左右。二者的吸收光谱基本相同，说明二者的能带宽度基本相同。非晶薄膜的结构与多晶粉末不同，导致二者的导带结构不同，是二者差别的主要原因。通过地不同条件下存入的单层８－羟基喹啉铝电致发光器件的老年发现其老化的原因主要是器件工作电流的热效应引起非晶薄膜的重结晶。另外，在空气气氛     

铝膜沉积工艺对AIC法制备多晶硅薄膜的影响

采用真空热蒸发和磁控溅射两种方法沉积铝膜,通过对Glass/Si/SiO2/Al叠层结构进行铝诱导晶化(AIC)制备多晶硅薄膜。采用X射线衍射谱(XRD)、光学显微镜和拉曼光谱对样品进行分析,研究两种铝膜沉积工艺对AIC法制备多晶硅性能的影响。结果表明,采用两种方法沉积的铝膜均能诱导出(111)高度择优取向的大晶粒尺寸(～100μm)的多晶硅薄膜,但与磁控溅射沉积相比,真空热蒸发沉积的铝膜诱导出的多晶硅薄膜应力更小、结晶质量更高,且晶化速率更快。     

Structural and optical characterization of Sn incorporation in CuInS2 thin films grown by vacuum evaporation method

Structural and optical properties of non-doped and Sn-doped CuInS₂ thin films grown by double source thermal evaporation method were studied. Sn deposition time is taken between 0 and 5 min. The films were annealed at 250 °C for 2 h in vacuum after evaporation. The X-ray diffraction spectra indicated that polycrystalline CuInS₂ films were successfully obtained after annealing and no Sn binary or ternary phases are observed for the Sn time depositions less or equal to 5 min. The Sn-doped samples after annealing have bandgap energy of 1.45–1.49 eV. Furthermore, we found that the Sn-doped CuInS₂ thin films exhibit N-type conductivity after annealing.     

Influence of thermal annealing and ultraviolet light irradiation on LaF3 thin films at 193 nm

Lanthanum fluoride (LaF3) thin films were prepared by resistive heating evaporation and electron-beam gun evaporation under the same deposition rate, deposition substrate temperature, and vacuum pressure. The coated LaF3 films were then treated by heat annealing and UV light irradiation. The optical properties, microstructures, stress, and laser-induced damage threshold (LIDT) at a wavelength of 193 nm were investigated. The surface roughness, optical loss, stress, and LIDT of the films were improved after the annealing. The films had better properties when irradiated by UV light as compared with heat annealing.     

纳米ZnO薄膜制备及液态源掺杂

用真空蒸发法在玻璃和单晶硅片 (10 0 )上制备Zn薄膜 ,然后对Zn薄膜进行氧化、热处理获得纳米ZnO薄膜。对在硅片上制备的Zn薄膜一次性进行高温掺杂、氧化获得纳米ZnO∶P和ZnO∶B薄膜。研究不同氧化、掺杂温度和时间对薄膜结构、电学性能的影响。结果表明 :氧化温度和时间对ZnO薄膜结构影响较大 ,液态源掺P可明显改善纳米ZnO薄膜的导电性能、结构特性和化学组分     

Zn掺杂SnS薄膜的表征及光学特性

真空共蒸发制备掺Zn(2%,4%(质量比))的SnS薄膜。研究热处理对Zn掺杂SnS薄膜的结构、表面形貌、化学组分及光学特性的影响。实验给出2%掺Zn薄膜经300℃,40 min热处理后,得到正交晶系的SnS多晶薄膜。掺Zn可一定程度抑制薄膜中S的损失,使薄膜体内Sn∶S元素化学计量得到改善,从未掺Zn的Sn∶S比为1.90∶1降到1.38∶1(2%)及1.36∶1(4%)。掺Zn后SnS薄膜的吸收边都发生红移,光吸收系数高达105cm-1。未掺Zn薄膜的直接光学带隙1.95 eV,掺Zn是1.375 eV(2%)和1.379 eV(4%)。Sn和S在薄膜中分别呈+2和-2价态,Zn以间隙和替位两种状态存在。     

Low-temperature epitaxy of silicon by electron beam evaporation

In this paper we report on homoepitaxial growth of thin Si films at substrate temperatures T_s = 500-650 °C under non-ultra-high vacuum conditions by using electron beam evaporation. Si films were grown at high deposition rates on monocrystalline Si wafers with (100), (110) and (111) orientations. The ultra-violet visible reflectance spectra of the films show a dependence on T_s and on the substrate orientation. To determine the structural quality of the films in more detail Secco etch experiments were carried out. No etch pits were found on the films grown on (100) oriented wafers. However, on films grown on (110) and (111) oriented wafers different types of etch pits could be detected. Films were also grown on polycrystalline silicon (poly-Si) seed layers prepared by an Aluminum-Induced Crystallisation (AIC) process on glass substrates. Electron Backscattering Diffraction (EBSD) shows that the film growth proceeds epitaxially on the grains of the seed layer. But a considerably higher density of extended defects is revealed by Secco etch experiments.     

Optical and electrical properties of ZnO films deposited by activated reactive evaporation

ZnO films having good transmittance and conductivity were deposited by activated reactive evaporation of Zn metal on glass and Si substrates at room temperature. Optical constants and thickness of ZnO films deposited under different deposition conditions were determined both by spectroscopic ellipsometry (SE) and spectrophotometry. Structural studies showed that the films exhibited a polycrystalline wurtzite structure with the preferential oriented along the (002) plane. Electrical studies by four probe technique showed that the sheet resistance of the films varied from 10⁶ to 50 Ω/square depending upon the oxygen partial pressure used during deposition, and this sheet resistance value increased with time. The increase in sheet resistance with time was found to be dependent on the surface morphology of the film and on the substrate over which they were deposited.     

钢板锌镁镀层制备及退火工艺对锌镁合金化的影响

钢板表面的锌镁合金镀层可以提高其耐腐蚀性能,而锌镁金属间化合物MgZn2和Mg2Zn11的形成可能是耐腐蚀性能提高的主要因素。本文在镀锌钢板表面采用真空热蒸发镀镁,并由快速退火工艺形成锌镁合金镀层,进而研究退火条件对形成锌镁合金镀层的影响,即通过改变退火温度和时间,得到不同的合金成分,然后通过X射线衍射分析退火条件对合金成分的影响。研究表明,退火温度较低时,不会形成锌镁合金;退火温度越高,形成的锌镁合金相越多,合金化程度越高;退火温度过高会导致铁锌合金相生成。退火时间对合金化也有类似规律。     

X-ray diffraction studies of Bi2O3 films prepared by reactive and activated reactive evaporation

Bi₂O₃ films were prepared by reactive evaporation and by activated reactive evaporation. The various phases obtained were studied using X-ray diffraction. Reactive evaporation always produced β-Bi₂O₃ films. For a given substrate temperature, low rates of deposition (less than 20 Å s^-1) always produced β-Bi₂O₃ films, whereas high rates of deposition (greater than 35 Å s^-1) produced α-Bi₂O₃ films when the oxygen partial pressure inside the chamber was kept constant. Films prepared by both reactive evaporation and activated reactive evaporation at substrate temperatures below 400 K were amorphous in nature and at higher substrate temperatures polycrystalline films were produced. The results obtained on annealing these films in high vacuum and in air are also reported.     

Influence of rapid thermal annealing on the process of aluminum induced crystallization of amorphous Si

The effects of annealing methods on the crystallization process and microstructure of polycrystalline silicon (poly-Si) films obtained by aluminum-induced crystallization (AIC) of amorphous Si (a-Si) films were comparatively investigated. Glass/Al/a-Si structures were annealed by rapid thermal annealing (RTA) and conventional furnace at 500 °C for different times in Ar. As compared to furnace annealing, AIC of a-Si films annealed by RTA possesses a shorter period of nucleation time, a higher nucleation density and reduces the process time to form continuous poly-Si films. It is revealed that the continuous Si films obtained by both RTA and conventional furnace annealing are polycrystalline in nature, exhibiting good microstructures with Raman peaks at 518 cm^?1 and full-width at half-maximums of 6.43–6.48 cm^?1.