阳极层霍尔推力器的阳极分段形式对束流分布的影响

由于圆柱形阳极层霍尔推力器的阳极分段形式会影响到推力器内电势的分布,进而影响到推力器内放电等离子体中电子的运动形式和工质的电离率。本文主要从实验和仿真模拟两个方面来分析不同的阳极分段形式(单段阳极、两分段阳极、三分段阳极和四分段阳极)在同样的工作条件下,对离子束流分布的影响。通过结果分析来指导阳极的结构设计。由结果可知两分段阳极时的离子束电流和离子束能量较高。在束流直径35mm内的四种阳极分段形式下的束流电流分布有一定的差别,其他位置基本相同。900V的放电电压下,两分段阳极下的束流能量分布比三分段阳极的整体上均高32e V左右,比单阳极和四分段阳极高20e V左右(除去中轴线和边沿附近)。此研究结果对圆柱形阳极层霍尔推力器的阳极设计提供了可靠的理论依据。     

空心内磁极圆柱形阳极层霍尔推进器溅射仿真北大核心CSCD

溅射对圆柱形阳极层霍尔推进器的稳定运行和寿命具有不可忽视的影响。为了研究D-80空心内磁极圆柱形阳极层霍尔推进器的磁极溅射程度,建立了D-80圆柱形阳极层霍尔推进器的三维全粒子PIC/MCC模型,利用VORPAL仿真软件对D-80圆柱形阳极层霍尔推进器放电-溅射过程进行了仿真,得到了离子轰击到内、外磁极上的入射能量,入射角度的概率分布,分析了溅射粒子在不同放电功率、磁场和气压下的变化规律。仿真结果表明:离子溅射全部发生在内、外磁极的表面上,轰击内磁极的离子能量平均值和入射角都小于轰击外磁极的离子入射能量和入射角,但内磁极的内、外径表面上溅射程度最严重,与实验中磁极溅射形貌一致;高放电电压和高气压下,溅射程度更严重,并且与实验结果一致。     

空心内磁极圆柱形阳极层霍尔推进器溅射仿真

溅射对圆柱形阳极层霍尔推进器的稳定运行和寿命具有不可忽视的影响。为了研究D-80空心内磁极圆柱形阳极层霍尔推进器的磁极溅射程度,建立了D-80圆柱形阳极层霍尔推进器的三维全粒子PIC/MCC模型,利用VORPAL仿真软件对D-80圆柱形阳极层霍尔推进器放电-溅射过程进行了仿真,得到了离子轰击到内、外磁极上的入射能量,入射角度的概率分布,分析了溅射粒子在不同放电功率、磁场和气压下的变化规律。仿真结果表明:离子溅射全部发生在内、外磁极的表面上,轰击内磁极的离子能量平均值和入射角都小于轰击外磁极的离子入射能量和入射角,但内磁极的内、外径表面上溅射程度最严重,与实验中磁极溅射形貌一致;高放电电压和高气压下,溅射程度更严重,并且与实验结果一致。     

低功率圆柱形霍尔推进器实验特性研究

随着航天技术的发展以及微小型卫星应用数量的不断增多,空间推进领域对低功率电力推进的需求越来越多。常见的环形霍尔推进器缩放至低功率时效率低下。圆柱形霍尔推进器具有较低的表面积与体积比,有利于通过磁镜效应更好地束缚电子以减少通道壁处的粒子损失,从而减小通道的刻蚀和发热,这使得CHT对于低功率应用很有前景。文章进行低功率圆柱形霍尔推进器实验特性研究,在50 W功率范围内运行。实验得到了推进器在高电压、小气量、低电流工况下的工作特性、离子束特点等结果。实验表明：低功率圆柱形霍尔推进器工作电压在1000～2400 V之间,使用Ar体积流量在1.0～4.0 mL/min内,其比冲在218～1419 s,推力范围在0.118～0.78 mN,最大电流利用率为87%,最大推力效率为20.39%与先进霍尔推力器效率相当。同时发现在气体体积流量变大过程中,离子束出现强弱两种工作模式。     

微型化阳极层推力器数值模拟与性能实验

本文采用粒子网格结合蒙特卡罗碰撞方法对微型化阳极层霍尔推力器进行数值模拟，同时开展微型化阳极层霍尔推力器放电实验，评估了该微型化阳极层霍尔推力器的工作性能。结果表明，微型化阳极层推力器放电稳定，且离子束呈现出聚束模式，其放电电压范围为300～1100V，比冲范围为234～2047s，推力范围为0.5～5.4mN。该研究可为进一步实现高效率、轻质化、高性能微型阳极层霍尔推力器优化设计提供一定的数据支持。     

阳极层霍尔推力器阳极上电流振荡的实验探究

将圆柱形阳极层霍尔推力器的环形阳极分成独立两段,通过观测两个独立阳极段之间的电势差信号以及每个独立阳极段上的电信号来探究阳极上的电流振荡情况。结果表明:放电电压的提高加速了阳极段的电流振荡频率,并且提高电流振荡的振幅,随着放电电压的增大,振幅的大小不会一直增大,最终会到达一个饱和值。阳极段上电流振荡幅度较大,因此抑制这种振荡起伏对提高推力器的稳定性具有重大意义。     

正交电磁场离子源及其在PVD法制备硬质涂层中的应用

离子源是离子束产生的关键部件,正交电磁场离子源是以霍尔电流为理论基础的一类低能离子源。本文综述了考夫曼离子源、霍尔离子源以及阳极层线性离子源的发展历程及其在结构与功能方面的区别,分析了各种离子源在PVD法制备不同体系超硬涂层中的应用及对涂层结构、性能的影响,概述了国内外离子源的现状,并指出了国内离子源存在的问题。     

阳极磁屏蔽霍尔离子源磁场的数值模拟

为了提高离子束电流和离子束能量,进一步增加霍尔离子源的效率,对霍尔离子源阳极进行磁屏蔽,达到优化磁场位形,增强磁场对放电等离子体的约束。由磁场的数值模拟结果可知:阳极磁屏蔽后,有明显凸向阳极表面的弯曲磁场线,并且提高了磁镜磁场的磁镜比;大的正梯度磁场的存在,增强了磁场的径向分量,相对减弱了放电等离子体的震荡;不仅保留原有鞍形场的作用,而且还充分发挥了另外两个鞍形场的优势。最后通过实验结果和数值模拟结果的比较,验证了此数值模拟结果的正确性。     

圆柱形阳极层霍尔推力器的内磁极刻蚀研究

本文重点研究引起圆柱形阳极层霍尔推力器的内磁极刻蚀的入射离子能量和入射角分布,仿真中考虑入射离子能量和入射角分布大小的变化,进而得到相应的刻蚀速率。由仿真结果可知,放电电压400 V,阳极表面磁场强度175×10^-4T,中心最大刻蚀速率为3×10^-9m/s。磁场提高到205×10^-4T时,中心附近刻蚀速率增加到原来的1.3倍左右,边沿处的刻蚀速率基本相同。在175×10^-4T的磁场强度时,把放电电压从400提高到600 V时,中心附近的刻蚀速率从3×10^-9提高到12.1×10^-9m/s,刻蚀速率增加了4倍多。此仿真结果与150 h的实验结果一致。此研究方法和结果有助于圆柱形阳极层霍尔推力器的设计和寿命评估工作。     

圆柱形阳极层霍尔推力器的内磁极刻蚀研究北大核心CSCD

本文重点研究引起圆柱形阳极层霍尔推力器的内磁极刻蚀的入射离子能量和入射角分布,仿真中考虑入射离子能量和入射角分布大小的变化,进而得到相应的刻蚀速率。由仿真结果可知,放电电压400 V,阳极表面磁场强度175×10^(-4)T,中心最大刻蚀速率为3×10^(-9)m/s。磁场提高到205×10^(-9)T时,中心附近刻蚀速率增加到原来的1.3倍左右,边沿处的刻蚀速率基本相同。在175×10^(-9)T的磁场强度时,把放电电压从400提高到600 V时,中心附近的刻蚀速率从3×10^(-9)提高到12.1×10^(-9)m/s,刻蚀速率增加了4倍多。此仿真结果与150 h的实验结果一致。此研究方法和结果有助于圆柱形阳极层霍尔推力器的设计和寿命评估工作。     

A precision gas feeding system for a PIG heavy ion source

A precision gas feeding system aiming at stable and efficient operation of a small, cold-cathode PIG heavy ion source for the K = 50 MeV AVF cyclotron is described in detail. The system can regulate the supply gas pressure with a precision of 0.6 Torr and keep a constant gas flow rate with a stability of 0.010 ± 0.003 cm³/min. The ion source operating parameters such as the arc current, the arc voltage and the gas flow rate remain fairly constant through the lifetime of the source. By adopting this system in the routine accelerations of carbon or oxygen ions, the average beam current was increased by a factor of 2–3.     

Operating characteristics of the hollow anode glow discharge ion source

In this work, a new shape of a glow discharge ion source with axial extraction has been designed and constructed. High output ion beam current can be extracted axially in a direction normal to the discharge region without using extraction system. Optimization of the distance between the anode and the cathode has been determined using argon gas. It is found that the optimum gap distance between the anode and the cathode is equal to 3.5 mm, where stable discharge current and maximum output ion beam current can be obtained. The discharge characteristics of the ion source at different operating gas pressures have been measured at this optimum distance between the anode and the cathode. A disk of Teflon insulator has been put between the anode and the cathode. This disk was covering the cathode area and reducing the discharge area on the cathode surface for discharge confinement, therefore, a higher output ion beam current could be obtained.     

高电压阳极层霍尔离子源三维数值仿真与设计

对于阳极层霍尔离子源装置本身, 宽能、大束流、低气耗及低污染等指标是新一代装置的研发方向。基于拓宽装置放电电压范围的考虑, 针对装置现有结构, 进行了三维数值仿真建模。在现有装置的结构设计基础上, 对装置磁路及结构设计进行修改, 从而实现了对装置工作性能的提高。改进后的阳极层霍尔离子源放电电压范围在原有基础上扩展了50%以上, 放电电压上限可以达到3000 V。改进后的装置在高电压、低气压、小电流的放电条件下运行稳定, 仿真结果对装置的实际加工制造具有一定参考意义。     

氧离子能量对离子束辅助沉积Al2O3薄膜的结构及光学性能的影响

利用氧离子束辅助脉冲反应磁控溅射技术在聚酰亚胺基底上沉积Al2O3薄膜。这项技术在溅射高纯铝靶材的同时利用低能氧离子进行氧化来控制薄膜的化学配比。研究了薄膜沉积过程中离子束辅助的作用以及离子束放电电压对Al2O3薄膜的化学成分、结构、表面形貌、光学性能以及沉积速率的影响。结果发现,离子束放电电压对薄膜的化学成分具有显著影响,当电压增加到200 V,薄膜已基本达到完全化学计量比且薄膜为非晶结构;薄膜表面粗糙度随着离子束放电电压的增加而减小,当电压达到300V时,薄膜具有最小的表面粗糙度;通过对Al2O3薄膜透射谱的测量,分析薄膜的光学特性,获得了薄膜的光学常数随离子束放电电压的变化规律,发现氧离子束辅助沉积的薄膜具有较高的折射系数和较低的消光系数;另外,薄膜的沉积速率在电压增加到300V时达到最大值70 nm/min,是未采用离子束辅助时沉积速率的5倍。     

A compact ion source using a hollow cathode discharge and its application to thin film formation

A compact and simple ion beam source was developed and its application to ion beam sputter deposition of thin films was studied. The ion source consisted of a hollow cathode, an anode and an extraction electrode. Two acceleration electrodes were mounted at the edge of the cathode. Since the gas pressure in the cathode should be kept at a relatively high value (more than 0.05 Torr) to maintain the discharge, the ion source employed a differential pumping system. The fundamental discharge characteristics of the ion source were studied using argon or helium as the working gas.The ion source was applied to the ion beam sputter deposition of copper and ruthenium oxide films. The crystallinity of the copper films increased with an increase in the acceleration voltage, while all the ruthenium oxide films appeared to be amorphous or of very small grain size, regardless of the acceleration voltage. The effect of the acceleration voltage on the film resistivity was also studied.     

Oxygen ion beam assisted etching of single crystal diamond chips using reactive oxygen gas

The etching characteristics of single crystal diamond chips processed using an oxygen ion beam with reactive oxygen gas flux were investigated. The specific etching rate increased linearly with increasing ion energy in the range of 250 to 1000 eV. The specific etching rates processed in a 1000-eV oxygen ion beam with oxygen gas was approximately twice that processed only in a 1000-eV oxygen ion beam. The angular dependences of only a 500-eV oxygen ion beam (no assist), and a 500-eV argon ion beam with oxygen gas were quite different from that of the other conditions. The specific etching rates were almost constant as a function of ion incident angle in the range of 0 to 50°. Those for the other conditions first increased with increasing ion incident angle, and reached a maximum rate at an ion incident angle of 40° or 50°, and then decreased gradually with further increase in ion incident angle. The specific etching rates using an argon ion beam with oxygen gas first increased with increasing gas partial pressure and then reached a saturation level at a gas partial pressure above 0.015 Pa, whereas those for the other conditions increased linearly with increasing gas partial pressure in the range of 0 to 0.06 Pa. The specific etching rates using an oxygen ion beam increased linearly with increasing substrate temperature in the range of 100 to 500 °C. The specific surface roughness was almost constant as a function of the substrate temperature, in the range of 100 to 500 °C. The specific surface roughness after assisted etching using oxygen or hydrogen gases was approximately half that processed in only oxygen or argon ion beams (no assist). © 2001 Kluwer Academic Publishers     

Effects of oxygen gas flow rate and ion beam plasma conditions on the opto-electronic properties of indium molybdenum oxide films fabricated by ion beam-assisted evaporation

The purpose of the present work is to experimentally study the effects of the oxygen gas flow rate and ion beam plasma conditions on the properties of indium molybdenum oxide (IMO) films deposited onto the polyethersulfone (PES) substrate. Crystal structure, surface morphology, and optoelectronic properties of IMO films are examined as a function of oxygen gas flow rate and ion beam discharge voltage.Experimental results show that the IMO films consist of a cubic bixbyite B-In₂O₃ single phase with its crystal preferred orientation alone B(222). Mo⁶⁺ ions are therefore considered to partially substitute In³⁺ sites in the deposit. Under-controlled ion bombardment during deposition enhances the reaction among those arriving oxygen and metal ion species to condense into IMO film and facilitates a decreased surface roughness of IMO film. The film with ultimate crystallinity and the lowest surface roughness is obtained when the oxygen flow rate of 3 sccm and the discharge voltage of 110 V are employed. This results in the lowest electrical resistivity due mainly to the increased Hall mobility and irrelevant to carrier concentration. The lowest electrical resistivity of 8.63 × 10^− 4 ohm-cm with a 84.63% transmittance at a wavelength of 550 nm can be obtained, which satisfies the requirement of a flexible transparent conductive polymer substrate.     

Ion transport diagnostics in a microsecond pulsed Grimm-type glow discharge time-of-flight mass spectrometer

A Grimm-type glow discharge ion source, operated in the microsecond pulsed mode, has been interfaced to a commercial time-of-flight mass spectrometer. Ion transport from the source to the mass spectrometer, an inherent limitation of a Grimm source and mass spectrometer combination, was evaluated. The primary discharge operating conditions found to influence transport efficiency were gas flow rate and source pressure. The configuration of the Grimm-type source also influenced ion transport, including use of a gas-directing sleeve device. The effect of transport efficiency was separated into two components: (1) total ion signal and (2) temporal resolution. The latter is an advantage afforded by use of a pulsed glow discharge source and time-of-flight spectrometer, which allows discrimination against interfering gaseous background ions by appropriate ion sampling time. Shown as an example is the identification of trace magnesium from potential background interference using an optimized source configuration based on this temporal resolution method.     

霍尔离子源制备类金刚石薄膜研究

采用霍尔离子源沉积类金刚石薄膜是近年来新出现的一种方法 ,本文研究了自行研制的霍尔离子源的性能以及采用此离子源制备类金刚石薄膜及工艺参数的影响。结果表明 ,霍尔离子源在较低的电压即可起辉 ,可提供稳定的能量较低的离子束流。采用霍尔离子源沉积类金刚石薄膜的沉积速率约为 0 5nm/s。随着霍尔离子源灯丝电流的升高 ,离子源放电电压下降 ,制备的类金刚石薄膜的硬度下降。放电电流的变化对类金刚石薄膜的硬度影响不大。     

高压脉冲电晕放电氮等离子体的分子束质谱诊断研究

克服强电磁场干扰 ,以具有三级差分抽气系统的分子束质谱为手段 ,对线板式高压脉冲电晕放电N2 等离子体阴极板区的正离子成分进行了首次诊断研究。发现在各种实验条件下 ,N 离子流强度均显著大于N 2 ;N 及N 2 离子流强度随放电电压、放电频率升高而增大 ,随放电室气压变化则存在一极值。对N2 等离子体中所包含的主要基元物理 化学过程进行了讨论