CdZnTe晶片4种化学钝化工艺效果的比较

常用于X射线和γ射线探测器中的CdZnTe(CZT)晶片经机械抛光后表面存在损伤层和许多肉眼看不到的划痕,采用溴甲醇(Br2-CH3OH)腐蚀可有效去除损伤层和划痕,使表面变得光亮平整.但经Br2-CH3OH腐蚀的表面富Te而产生较大的表面漏电流,为此,采用H2O2溶液,NH4F/H2O2溶液,KOH-KCl溶液+NH4F/H2O2溶液二步法和溴水4种湿法化学钝化工艺,对CZT晶片表面进行了钝化处理,并对比了其钝化效果.结果表明:二步法钝化效果最好,表面漏电流降低4个数量级,NH4F/H2O2对CZT晶片表面的钝化效果较好,表面漏电流降低3个数量级.     

以Zn(NH4)3Cl5为输运剂气相生长ZnSe单晶

以化合物Zn(NH4)3Cl5为气相输运剂,ZnSe多晶为原料,用化学气相输运技术(CVT)在封闭石英管中生长出直径9 m m、长度25 mm的Zn1+0 031Se单晶晶体生长区的温度为898～915℃,温度梯度为1.5℃@cm-1,生长周期为21 d.晶体生长端由{111}和{100}单形包围.用RO-XRD技术研究了晶体的结晶质量,ZnSe(111)的RO-XRD谱的FWHM为24 s.光致发光特性研究表明,Zn1+0.031Se单晶体的PL谱由Fx(439 nm)和BBT(418 nm)等发光峰组成,晶体的短波吸收限位于465 nm处,腐蚀点密度为(5～7)×104cm-2.化合物Zn(NH4)3Cl5具有较高的热稳定性,是一种适合气相生长ZnSe单晶的新型输运剂.     

白光LED用MMoO_4∶Eu~(3+)红色荧光粉制备工艺研究

用溶胶-凝胶优化法合成了红色荧光粉MMoO4∶Eu3+(M=Ca、Sr、Ba),通过SEM、PL表征了荧光粉的形貌及发光性能。结果表明:烧结温度为800℃时,颗粒粒度分布均匀,粒径约为0.5-1μm,有很好的分散性;掺杂0.25molEu2O3在395nm和464nm两主激发峰下,均可得到616nm处红光发射极峰,属于Eu3+典型的5 D0→7F2的跃迁所致;助熔剂NH4F明显提高了钼酸盐荧光粉的发光强度;通过比较M0.5MoO4∶Eu03.+25,Li0+.25(M=Ca、Sr、Ba)发光性能得知:在395nm激发下,Ca0.5MoO4∶Eu30.+25,Li0+.25荧光粉最有利于提高发光强度。     

CaMoO_4:Eu~(3+)红色荧光粉化学共沉淀合成与表征

以NH4HCO3-NH3·H2O为混合沉淀剂,采用化学共沉淀法制备CaMoO4:Eu3+红色荧光粉.通过TG-DTA和XRD研究CaMoO4:Eu3+前驱体的热分解和晶相形成过程;采用SEM和PL表征了该荧光粉的表面形貌和发光性能,并与NH4HCO3沉淀剂、NH3·H2O沉淀剂合成的CaMoO4:Eu3+荧光粉以及高温固相法制备的荧光粉进行对比.结果表明,煅烧温度700℃时,前驱体能够完全转换成单一CaMoO4:Eu3+白钨矿结构;煅烧温度900℃制备的荧光粉发光强度达到最大值;采用混合沉淀剂制备的荧光粉大小均匀、无团聚、呈类球型,平均粒径0.9μm.与高温固相法比较,其激发光谱中的Eu-O电荷迁移带向长波方向微小移动,而7F0→5L6(394nm)和7F0→5D2(465nm)的强电子吸收能有效改善红色荧光粉使用性能;与单独的NH4HCO3或NH3·H2O沉淀剂或高温固相法相比,该荧光粉发光性能显著改善,发光强度为传统固相法的2倍.     

水热法合成高发光强度ZnS:Cu,Al纳米荧光粉研究

采用水热法直接合成了高发光强度的ZnS:Cu,Al纳米荧光粉.XRD和TEM测试结果表明,合成纳米晶为纯立方相结构,球形纳米晶尺寸约15nm,尺寸分布窄,分散性好.首次系统地研究了不同[S2-]/[Zn2+]和[Al3+]/[Cu2+]比值对清洗样品和不清洗样品的光致发光(PL)光谱的影响.实验结果表明,激活剂浓度不变而改变[S2-]/[Zn2+]摩尔比时,发光强度显著变化,同时未清洗样品的PL强度均比清洗样品的强,且未清洗样品强度增强的比值在低的[S2+]/[Zn2+]时更显著.这说明其发光机理为紫外光激发材料表面的发光中心,即PL强度决定于纳米材料的表面态,此外掺杂的激活剂摩尔比同样对PL光谱有影响.在我们的实验中,用343nm紫外光激发时,n[S2-]:n[Zn2+]=3,n[Al3]:n[Cu2+]=2时未清洗样品的发光最强,此时于室内照明条件下可观察到明亮的绿光.     

表面处理对n-GaN上无合金化Ti/Al欧姆接触的作用

本文研究了表面处理对n-GaN上无合金化的Ti/Al电极起的作用,比较了(NH4)2Sx和CH3CSNH2两种不同的表面处理方法.在用CH3CSHN2/NH4OH溶液处理过的样品上制作的无合金化的Ti/Al电极,可得到较低的(4.85～5.65)×10-4Ω·cm2的接触电阻率,而且材料的发光特性也有明显提高.     

水热法制备ZnS∶Cu纳米晶及其光致发光性能

采用水热法制备了不同掺杂浓度的ZnS∶Cu(0~0.6%(原子分数))纳米晶。结果表明,ZnS∶Cu纳米晶为立方晶系闪锌矿结构,晶粒尺寸在3~4nm之间;相比未掺杂的ZnS纳米晶,掺杂ZnS∶Cu纳米晶在500nm处产生了发射光谱(PL)。这是由于发光中心位于446和468nm两个PL光谱与ZnS自身的缺陷有关,发光中心位于500nm的绿光为浅施主能级(S缺陷)与铜t2能级之间跃迁而产生。并且其发光强度随掺杂浓度显著增强,当浓度为0.4%(原子分数)时达到最大值,进而发生了浓度淬灭现象。     

利用碱金属碳酸盐提高空气中制备BaMgSiO_4∶Eu~(2+)的发光性能研究

通过高温固相反应在空气中制备了一系列Eu2+掺杂的BaMgSiO4∶Eu2+发光材料,研究了其发光性能及M2CO3(M=Li、Na、K)助溶剂对其性能的影响。利用X射线粉末衍射(XRD)、荧光光谱(PL)和扫描电镜(SEM)对合成的样品进行表征。研究表明,Eu2+进入Ba(1)和Ba(2)位置有利于Eu2+在空气中稳定存在。M2CO3(M=Li、Na、K)助溶剂促进Eu3+离子在空气中还原成Eu2+离子,提高了BaMgSiO4∶Eu2+的发光强度。当Na2CO3用量为6%时,BaMg-SiO4∶Eu2+的发光强度达到还原气氛中制备的91%。     

白光LED用LiY(MoO_4)_2∶RE~(3+)(RE=Eu,Sm,Pr)荧光粉的制备与性能

采用水热法制备了LiY(MoO4)2∶RE3+(RE=Eu、Sm、Pr)系列荧光粉,通过X射线衍射(XRD),扫描电镜(SEM)对该系列荧光粉的物相、形貌进行了表征。结果表明,稀土离子的掺入没有改变荧光粉的晶相,3种稀土离子的加入使得LiY(MoO4)2粉体形成片层状结构。利用PL(光致发光光谱)对样品的发光性能进行了测试,分析了稀土离子掺杂浓度对发光强度的影响并进行浓度猝灭机理分析,结果表明,Eu3+、Sm3+、Pr3+最佳掺杂浓度分别为7%,4%和1.5%。LiY(MoO4)2∶Eu3+荧光粉能够很好地被395nm的紫外光和465nm的蓝光有效激发而发射红光,而Sm3+和Pr3+掺杂的LiY(MoO4)2分别在406和453nm激发下,发射出650和657nm的红光,LiY(MoO4)2∶RE3+(RE=Eu、Sm、Pr)系列荧光粉有望成为白光LED用红色荧光粉。     

n-GaAs(100)表面及Na/n-GaAs(100)界面的光电子谱研究

采用X射线光电子谱(XPS)及紫外光电子谱(UPS),对经5keV Ar~+离子轰击后的n-GaAs(100)表面及其Na/GaAs(100)界面作了详细的研究。并且和Na/n-GaAs(100)-(4×1)界面进行比较,以揭示Ar~+离子轰击对金属/n-GaAs(100)界面的影响。结果表明,经5keV氩离子轰击后的n-GaAs(100)表面,其功函数较n-GaAs(100)-(4×1)表面大0.3eV。而且,Na在低覆盖度时(θ≤0.02ML)。轰击后的GaAs(100)表面,Na/n-GaAs(100)界面费米能级移动量为0.7eV,而Na/n-GaAs(100)-(4×1)界面,其费米能级移动量仅为0.3eV。     

Fabrication of photoluminescent S doped Y2O3:Eu3+ nanobelts

We have successfully fabricated the S doped Y(OH)3 nanobelts with 15-30 microm in length and 50-300 nm in width and S doped Y(OH)3:Eu3+ nanobelts with 4-15 microm in length and 80-500 nm in width (most between 100 and 200 nm) via a similar process for preparation of Y(OH)3 nanotubes. Photoluminescent (PL) nanobelts of S doped Y2O3:Eu3+ were obtained through dehydration of the S doped Y(OH)3:Eu3+ nanobelts at 450 degrees C in N2. The PL properties of the S doped Y2O3:Eu3+ nanobelts have been studied and evidenced that we have successfully synthesized functional S doped Y2O3:Eu3+ nanobelts with interesting photoluminescence properties.     

离子注入氧化锌纳米晶体光致发光特性(英文)

为进一步了解离子注入过程对纳米晶体发光响应的损伤效果,研究了注入氢离子和氦离子对氧化锌纳米晶体光致发光(PL)特性的影响.首先在二氧化硅衬底上制备了直径为4 nm和9 nm的氧化锌纳米晶体薄膜,接着在室温下向生成的薄膜中注入氢离子和氦离子,并研究其PL响应变化.结果表明,与未注入离子的纳米晶体相比,注入氦离子导致缺陷PL发光增加,而当注入氢离子之后,缺陷发光大幅降低,表明氢原子对注入损伤有钝化作用.比较近谱带边沿(NBE)与缺陷发光之比发现,较大颗粒的纳米晶体其近谱带边沿与缺陷发光比在注入氢离子后增大,而在注入氦离子后降低.该规律同样适用于较小颗粒的纳米晶体,但其近谱带边沿与缺陷发光比在注入氢离子之后的增幅比大颗粒晶体的小得多.     

MoS_2与TiO_2一维纳米复合材料的制备与表征

本文采用气相还原法制备了MoS2包覆TiO2的一维纳米复合材料,首先用水热法制备TiO2纳米管,并制备前驱体(NH42)MoS4;用浸渍法将(NH4)2MoS4附着于TiO2纳米管表面;然后利用氢气还原前驱体得到MoS2包覆层。用X射线衍射(XRD)、扫描电镜(SEM)和透射电镜(TEM)表征所得产物的结构及微观形貌。结果表明当还原反应温度较高(≥600℃)时,产物呈烧结状态,而当反应温度为500℃时,可以得到表面均匀包覆MoS2的TiO2纳米管复合材料,其中包覆层MoS2的结晶程度较低。在此基础上,本文提出了该产物的生长模型,并对包覆前后的样品做荧光性能分析。     

Effect of monovalent charge compensators on the photoluminescence properties of Ca3(PO4)2∶Tb3+,A+(A=Li,Na,K)phosphors

Ca3-x(PO4)2 ∶xTb3+(0.2≤x≤0.4),Ca2.3(PO4)2∶0.35Tb3+,0.35A+(A=Li,Na,K),and Ca2.3(PO4)2∶0.35Tb3+,yLi+(0.35≤y≤0.455)phosphors were prepared by solid-state reaction.All the prepared phosphors formed a rhombohedral unit cell with the R3c space group.To improve the photoluminescence(PL)properties of the Ca2.65(PO4)2∶0.35Tb3+phosphor,monovalent charge compensators such as Li+,NA+,and K+were added to the Ca2.65(PO4)2∶0.35Tb3+phosphor.The charge compensators acted as fluxes,so they improved the crystallinity.The excitation and emission properties were significantly improved through the incor-poration of charge compensators.In particular,among the charge compensators,Li+ion substantially enhanced the emission intensity and color purity.Furthermore,considering the evaporation of Li2CO3 during the annealing process,we optimized the concentration of Li+charge compensator to enhance its PL performance.Impressively,the green emission intensity of the Ca2.3(PO4)2∶0.35Tb3+,0.385Li+phosphor was 260％higher than that of the Ca2.65(PO4)2∶0.35Tb3+phosphor.We believe that the effect of charge compensators on the PL properties and the optimum concentration of Li+charge compensator are useful for the design of phosphors in light-emitting diodes.     

铜包裹碳化硅颗粒复合粉体的化学原位沉积制备与表征

以铜氨离子为铜源, 水合肼为还原剂, 在表面预氧化的SiC表面, 采用一步原位化学沉积法制备了均匀包裹Cu颗粒的SiC复合粉体. 采用扫描电子显微镜(SEM)、X射线衍射(XRD)、傅立叶红外光谱(FT-IR)、Zeta电位等测试表征手段研究了工艺条件对原位沉积反应的影响. 研究发现SiC表面预氧化形成的SiO2层能显著增强对铜氨离子吸附能力, 有助于原位还原生成单质Cu, 形成近乎连续包裹层. 控制反应体系中铜氨离子浓度和反应温度可以影响反应速率, 从而控制Cu颗粒的沉积速率和包裹效果. 对比研究表明, 在0.2 mol/L铜氨离子溶液中70℃反应, 在预氧化的SiC表面能够获得最佳包裹层.     

Hybrid fluorometric flow analyzer for ammonia

We describe a robust, highly sensitive instrument for the determination of ambient ammonia. The instrument uses two syringe pumps to handle three liquids. The flow configuration is a hybrid between traditional flow injection (FI) and sequential injection (SI) schemes. This hybrid flow analyzer spends approximately 87% of its time in the continuous flow FI mode, providing the traditional FI advantages of high baseline stability and sensitivity. The SI fluid handling operation in the remaining time makes for flexibility and robustness. Atmospheric ammonia is collected in deionized water by a porous membrane diffusion scrubber at 0.2 L/min with quantitative collection efficiency, derivatized on-line to 1-sulfonatoisoindole, and measured by fluorometry. In the typical range for ambient ammonia (0-20 ppbv), response is linear (r2 = 0.9990) with a S/N = 3 limit of detection of 135 pptv (15 nM for 500 microL of injected NH4+(aq)) with an inexpensive light emitting diode photodiode-based detector. Automated operation in continuously repeated, 8-min cycles over 9 days shows excellent overall precision (n = 1544 p(NH)3 = 5 ppbv, RSD = 3%). Precision for liquid-phase injections is even better (n = 1520, [NH4+(aq)] = 2.5 microM, RSD = 2%). The response decreases by 3.6% from 20 to 80% relative humidity.     

Microwave digestion of environmental and natural waters for selenium speciation

A microwave preparation procedure is proposed for selenium speciation in natural and drinking waters. Different chemical reagents were tested, and the conditions for Se speciation were optimized. The effect of the different reagents on various oxidation states of selenium under microwave digestion conditions was investigated. Most of the Se(-II) was converted to selenite when digested with HNO3 and <20% to selenate. The digestion with H2O2/H2SO4 can change most Se species into Se(IV). The concentration of Se(IV) in the samples was then determined by HPLC with a fluorescence detector after derivatization with 2,3-diamino-naphthalene (DAN). The microwave preparation procedure allows Se speciation in water samples. Se(IV) was determined after concentrating the sample under nitrogen protection. The amount of Se(IV) and Se(VI) was measured by adding an equal volume of concentrated hydrochloric acid to water sample to reduce Se(VI) to Se(IV). Then the amount of Se(VI) can be calculated by subtraction. The total selenium can be determined after digestion with H2O2/H2SO4, or after digestion with HNO3 followed by reduction with concentrated hydrochloric acid. Selenium (-II, 0) was calculated by subtracting inorganic Se(IV+VI) from the total. Detection limits of 0.0066 ng and 0.0096 ng Se were obtained for HNO3 and H202/H2SO4 as digestion reagents, respectively. The total Se in the four water samples tested range from 0.20 to 0.90 microg L(-1). Among them the dominant form was Se(VI) with the exception of pond waters where Se(-II) predominated.     

Optical anisotropy in self-assembled InAs nanostructures grown on GaAs high index substrate

We present a study of the optical properties of InAs self-assembled nanostructures grown by molecular beam epitaxy on GaAs(11N)A substrates (N?=?3-5). Photoluminescence (PL) measurements revealed good optical properties of InAs quantum dots (QDs) grown on GaAs(115)A compared to those grown on GaAs(113)A and (114)A orientations substrate. An additional peak localized at 1.39 eV has been shown on PL spectra of both GaAs(114)A and (113)A samples. This peak persists even at lower power density. Supporting on the polarized photoluminescence characterization, we have attributed this additional peak to the quantum strings (QSTs) emission. A theoretical study based on the resolution of the three dimensional Schr?dinger equation, using the finite element method, including strain and piezoelectric-field effect was adopted to distinguish the observed photoluminescence emission peaks. The mechanism of QDs and QSTs formation on such a high index GaAs substrates was explained in terms of piezoelectric driven atoms and the equilibrium surfaces at edges.     

Studies on the Condensation Pathway to and Properties of Diiron Azadithiolate Carbonyls

Reaction of Fe(2)(SH)(2)(CO)(6) and HCHO, which gives Fe(2)[(SCH(2))(2)NH](CO)(6) in the presence of NH(3), affords the possible intermediate Fe(2)(SCH(2)OH)(2)(CO)(6), which has been characterized crystallographically as its axial-equatorial isomer. Fe(2)(SCH(2)OH)(2)(CO)(6) was shown to react with ammonia and amines to give Fe(2)[(SCH(2))(2)NR](CO)(6) (R = H, alkyl). Related hemithioacetal intermediates were generated by treatment of Fe(2)(SH)(2)(CO)(6) with RC(O)C(O)R (R = H, Ph, 4-F-C(6)H(4)) to give cycloadducts. The benzil derivative Fe(2)[S(2)C(2)(OH)(2)Ph(2)](CO)(6), a C(2)-symmetric species, was also characterized crystallographically. The acylated azadithiolate Fe(2)[(SCH(2))(2)NAc](CO)(6) was prepared by reaction of Li(2)Fe(2)S(2)(CO)(6) with (ClCH(2))(2)NC(O)Me. DNMR experiments show that the free energies of activation for rotation of the amide bond are the same for Fe(2)[(SCH(2))(2)NAc](CO)(6) and Fe(2)[(SCH(2))(2)NAc](CO)(4)(PMe(3))(2), which implies that the ligands on the iron centers do not strongly affect the basicity of the nitrogen. As a control, we showed that the thioamide Fe(2)[(SCH(2))(2)NC(S)Me](CO)(6) does exhibit a significantly higher barrier to rotation, attributable to the increased double-bond character of the N-C(S) bond.     

Computer-Aided Materials Design for semiconductors

Computer-aided materials design for semiconductors is reviewed. Reliable predictions are possible for a wide range of problems, such as the behavior of various heterovalent atomic species in III-V semiconductors, including C (conduction type), Si (DX-center), Ge (GaAs/Ge superlattices), S, Se and Te (passivation of GaAs surfaces), by using such computer-aided calculation techniques as pseudopotential methods.