高速集电极沟槽绝缘栅双极晶体管

在前期高速绝缘栅双极晶体管(IGBT)的基础上提出一种高速集电极沟槽绝缘栅双极晶体管(CT-IGBT)。该器件沟槽集电极与漂移区的内建电势差感应形成电子沟道而加快关断速度,且集电极沟槽具有不同于传统电场截止层(FS)的电场截止机制,并引入低浓度N型层以降低集电极沟槽对空穴注入的抑制作用。硅基材料有限元仿真结果表明,新结构CT-IGBT的关断下降时间比传统沟槽FS-IGBT少49%,且前者耐受的雪崩能量比后者高32%。因此,新结构CT-IGBT具有比FS-IGBT更优越的关断速度和强度,可应用于大功率高速电力电子系统。     

Failure dynamics of the IGBT during turn-off for unclampedinductive loading conditions

The internal failure dynamics of the insulated gate bipolar transistor (IGBT) for unclamped inductive switching (UIS) conditions are studied using simulations and measurements. The UIS measurements are made using a unique, automated nondestructive reverse-bias safe operation area test system. Simulations are performed with an advanced IGBT circuit simulator model for UIS conditions to predict the mechanisms and conditions for failure. It is shown that the conditions for UIS failure and the shape of the anode voltage avalanche-sustaining waveforms during turn-off vary with the IGBT temperature, and turn-off current level. Evidence of single- and multiple-filament formation is presented and supported with both measurements and simulations     

±320 kV厦门双极柔性直流输电工程系统设计

为了避免采用对称单极接线柔性直流工程在可靠性、绝缘水平以及大容量换流变压器运输制造上的缺点,±320kV/1 000 MW厦门柔性直流输电工程是世界范围内第一个采用双极接线的柔性直流工程。文中以厦门工程为背景对双极高压大容量柔性直流工程的系统设计展开研究。首先,通过主接线优化设计使得采用双极接线的柔性直流工程具备3种运行方式,提高了系统的可靠性。其次,高压大容量柔性直流工程中设备裕度通常较小,通过对主回路参数开展精确计算从而实现小容量可关断器件支撑工程大功率传输。最后,对比了采用对称单极接线和双极接线柔性直流工程的暂态特性,即采用双极接线的工程暂态过电压较低但暂态电流恶化。提出通过暂态电流精确解析计算方法以及优化布置等方法,确保工程可关断器件的安全性。实践表明所提设计方法是可行和有效的。     

Advanced SPICE modeling of large power IGBT modules

An enhanced insulated gate bipolar transistor (IGBT) model based on the Kraus model with new derivations based on an extra parameter accounting for p-i-n injection was developed to allow simulation of both trench and DMOS IGBT structures. Temperature dependence was also implemented in the model. The model was validated against steady-state and transient measurements done on an 800-A 1.7-kV Dynex IGBT module at 25/spl deg/C and 125/spl deg/C. The Spice model has also shown excellent agreement with mixed mode MEDICI simulations. The Spice model also takes into account for the first time the parasitic thyristor effect allowing the dc and dynamic temperature-dependent latchup modeling of power modules as well as their temperature-dependent safe operating area.     

绝缘栅双极型晶体管升压斩波器的设计

介绍了一种用大功率绝缘栅极双极型晶体管(IGBT)模块SKM75GA L123D和驱动模块EXB840设计的直流升压斩波器。所设计的高频、大电流斩波器具有输出直流电压纹波小,性能可靠等优点。     

IGBT关断瞬态过压击穿特性研究

绝缘栅双极型晶体管(IGBT)过压击穿是一种常见的失效方式,由于线路和器件内部分布杂散电感,关断瞬态时会产生过大的电压尖峰从而引起过压击穿,通常误认为一旦发生过压击穿IGBT就会发生破坏性失效.针对此问题,基于IGBT结构和PN结雪崩电压击穿特性,从理论和实验出发研究了IGBT发生过压击穿时的工作特性和失效机理,说明了...     

IGBT模块栅氧老化机理分析与表征方法研究

绝缘栅双极型晶体管IGBT（insulated gate bipolar transistor）作为电力电子系统的核心器件,广泛应用于新能源发电、轨道机车牵引、电动汽车驱动以及航空航天等重要领域。栅氧层作为IGBT中相对薄弱的环节,如何准确地预测IGBT栅氧层老化状态成为学术界和工业界的研究热点。首先,分析IGBT栅氧层老化机理以及栅氧层老化对IGBT关断过程的影响,提出关断延迟时间td(off)作为IGBT栅氧层老化状态的状态参数。其次,建立IGBT栅氧层老化仿真模型,并对td(off)表征IGBT栅氧层老化状态进行仿真分析。最后,搭建了双脉冲实验平台,获得了栅氧层老化影响IGBT功率模块相关电气参数的实验结果,并与仿真结果进行了比较验证。实验结果证明td(off)可以有效地表征IGBT栅氧层老化状态。该研究对电力电子器件和装置的运行维护与状态预测具有重要的应用价值。     

On-the use of IGBT-gated GTO-cascode switches in quasi-resonantconverters

The gate turn-off (GTO) thyristor has the highest voltage and current rating among the semiconductor power switches used extensively today. This paper documents the use of an insulated gate bipolar transistor (IGBT) to improve switching performance of a GTO in a cascode switch. The IGBT-gated GTO-cascode switch features simple drive requirement, fast switching, robustness, and overcurrent protection. The cascode switch was applied in a quasi-resonant buck converter and simulated on a computer using PSPICE. Results indicate that IGBT-gated GTO-cascode switches are promising candidates for high-power and high-frequency applications     

IGBT器件的发展现状以及在智能电网中的应用

以绝缘栅双极型晶体管(insulated-gate bipolar transistor,IGBT)为代表的可关断半导体功率器件的成熟应用,推动了电力电子技术的又一次革新。首先介绍IGBT在智能电网中应用的重要性,对20多年来IGBT器件在芯片和封装等技术在国内外的发展水平进行回顾。重点分析IGBT的选型特点和在电网中的典型应用,最后分析在这些应用中使用IGBT器件所带来的深远影响。     

Characteristics and utilization of a new class of low on-resistanceMOS-gated power device

A new class of MOS-gated power semiconductor devices Cool MOS (Cool MOS is a trademark of Infineon Technologies, Germany) has been introduced with a supreme conducting characteristic that overcomes the high on-state resistance limitations of high-voltage power MOSFETs. From the application point of view, a very frequently asked question immediately arises: does this device behave like a MOSFET or an insulated gate bipolar transistor (IGBT)? The goal of this paper is to compare and contrast the major similarities and differences between this device and the traditional MOSFET and IGBT. In this paper, the new device is fully characterized for its: (1) conduction characteristics; (2) switching voltage, current, and energy characteristics; (3) gate drive resistance effects; (4) output capacitance; and (5) reverse-bias safe operating areas. Experimental results indicate that the conduction characteristics of the new device are similar to the MOSFET but with much smaller on-resistance for the same chip and package size. The switching characteristics of the Cool MOS are also similar to the MOSFET in that they have fast switching speeds and do not have a current tail at turn-off. However, the effect of the gate drive resistance on the turn-off voltage rate of rise (dv/dt) is more like an IGBT. In other words, a very large gate drive resistance is required to have a significant change on dv/dt, resulting in a large turn-off delay. Overall, the device was found to behave more like a power MOSFET than like an IGBT     

Evaluation of modern power semiconductor devices and future trendsof converters

The author reviews the modern power semiconductor devices that appeared in the 1980s, i.e., the insulated gate bipolar transistor (IGBT), static induction transistor (SIT), static induction thyristor (SITH), and the recently introduced MOS-controlled thyristor (MCT). The characteristics of these devices are discussed and compared from the viewpoint of power electronics applications. Although the IBGT is well known, the power electronics community is somewhat unfamiliar with the latter three devices. For completeness, a brief review of other power devices, such as the thyristor, triac, gate turn-off thyristor (GTO), bipolar transistor (BJT), and power MOSFET is also incorporated. Future trends are outlined     

Comparison of the Punch-Through and Non-Punch-Through IGT Structures

The insulated gate transistor (IGT) has been modeled as a wide-base bipolar junction transistor (BJT) driven by a MOSFET. Therefore, the vertical wide-base BJT structure influences the following IGT characteristics: 1) the forward current-voltage characteristics, 2) the fall time/forward-voltage drop trade-offs, 3) the high-temperature blocking, and 4) the turn-off current tail. An IGT with punch-through (PT) BJT yields lower forward voltage than that of an IGT with non-punch-through (NPT) BJT due to the thinner base of the PT BJT structure. The punch-through IGT has lower off-state (leakage) current and also shorter turn-off current tail due to lower current gain of a PT BJT than that of an NPT BJT. Both PT and NPT IGT's have large safe operation areas.     

1200-V Low-Loss IGBT Module With Low Noise Characteristics and High dIC/dt Controllability

This paper presents the enhanced characteristics of a newly developed low-loss and low-noise 1200-V insulated gate bipolar transistor (IGBT) module. In order to realize low-noise emission, it is necessary not only to improve the reverse recovery characteristics of the free wheeling diode (FWD) but also to reduce the low-current turn-on dI_C/dt of the IGBT. The new IGBTs with high turn-on dI_C /dt controllability and low turn-on power dissipation have been successfully developed by the reduction of Miller capacitance resulting from an optimization of the surface. The 1200-V 450-A IGBT module utilizing the new IGBT and optimized FWD chips has been able to realize 30% reduction of the switching power dissipation when compared to the conventional IGBT module under the operating condition to set the same noise emission level     

IGBT集电极漏电流特性及影响分析

绝缘栅双极型晶体管(IGBT)集电极漏电流是评价其性能的一个重要电气参数,反映的是正向阻断特性,与阻断电压和温度相关.基于IGBT结构和PN结反向电流原理,分析了IGBT集电极漏电流的组成特性,在低温阶段以阻断电压引起的产生电流为主,在高温阶段以温度引起的扩散电流为主,低温至高温的转变温度约为125℃,并从热平衡角度分...     

基于键合线等效电阻的IGBT模块老化失效研究

已有研究表明,键合线老化脱落失效是影响绝缘栅双极型晶体管(IGBT)可靠性的主要因素之一。以此为研究背景,首先根据IGBT模块内部键合线的结构布局与物理特性,分析键合线等效电阻与关断暂态波形的关系,建立键合线等效电阻与关断过程中密勒平台电压以及集电极电流的数学关系式,通过实验测量获得键合线等效电阻,最后分别对键合线等效电阻与键合线断裂数的关系进行定性与定量的分析,得出键合线等效电阻会随键合线断裂数的增加同方向变化,这也证明了本文所提方法的可行性和正确性。     

用于风电的模块化多电平变流器IGBT的定制化设计

模块化多电平换流器(MMC)已广泛应用于风力发电系统中,其中绝缘栅双极型晶体管(IGBT)模块的设计直接影响着系统的各项性能。而IGBT模块的设计选型缺乏理论指导,存在IGBT模块裕量选取过大造成的成本浪费现象,因此文中提出一种基于双目标优化的IGBT的定制化设计方法。首先以损耗和芯片成本作为IGBT定制化设计的指标,结合风力发电的年运行工况,根据风速的概率分布来评估IGBT损耗,通过双目标粒子群算法求得Pareto前沿。最后,分别采用IGBT模块和分立元件2种方法进行定制化设计,结果表明所提设计方法在降低器件成本的同时可以兼顾变流器的损耗和可靠性。     

IGBT并联动态不均流温度特性研究

绝缘栅双极型晶体管( IGBT)并联集成技术在现代电力电子领域中得到了日益广泛的应用,通常认为只要IGBT在初始工作时处于安全范围内,即使发生不均流也能正常工作.然而,IGBT工作一段时间后,产生的温度变化会对动态不均流产生影响.这里研究了温度对IGBT并联动态不均流的影响,设计了一组IGBT并联实验,采集了并联两模块...     

Ratings of semiconductors for AC drives

This paper discusses the characteristics and limitations of various power semiconductors used in motor controls and drives. Semiconductor types discussed include the insulated gate bipolar transistor (IGBT), transistor (bipolar and MOS device), SCR, gate-turn-off transistor (thyristor) (GTO), and diode. Important limitations, including voltage rating, current ratings, safe operating area, heat transfer characteristics, and limitations due to a particular device characteristic are discussed. The focus is on the IGBT; its advantages and disadvantages are discussed, as well as how it can be rated in a drive application     

基于载流子抽取模型的Trench Gate/Field-stop IGBT驱动器有源箝位功能分析

针对Trench gate/Field-stop IGBT结构特有的关断过程中集电极电流下降率不可控问题,引入了载流子抽取模型来模拟器件关断过程中的集电极电流下降阶段器件内部载流子的动态行为特性,并以此为基础分析了驱动器为适应Trench gate/Field-Stop IGBT结构这种关断特性而引入的有源箝位功能的作用机理,验证了载流子抽取模型在器件级与电路级交互作用分析中的实用性,为后续实现器件与电路的最佳匹配奠定了基础。     

IGBT高频开关电源的故障分析及处理

IGBT高频开关电源以其一系列优点,一经问世就在整个电镀行业得到了广泛应用.但该电源的缺点是IGBT模块容易损坏,目前的一些IGBT保护方案仅停留在理论阶段.针对一家电镀企业的大功率高频开关电源屡损IGBT进行了长期跟踪调查.通过对IGBT高频开关电源的主板DC/AC电路和驱动电路的深入研究,进行了故障排查及处理.