共查询到20条相似文献,搜索用时 12 毫秒
1.
Aluminum was detected in the channel of a thin-film transistor after its replacement of the polycrystalline silicon source and drain junctions. The resulting transistor exhibits enhanced field-effect mobility, steeper slope of the pseudosubthreshold region, reduced turn-on voltage extrapolated from the linear regime of operation, higher on-state current, and improved immunity against short-channel effects. These improvements are consistent with a measured reduction in the density of trap states. The reduction can be attributed to the presence of aluminum in the channel 相似文献
2.
An analytical model for the transfer characteristics of a polycrystalline silicon thin-film transistor (TFT) with an undoped channel is developed. While the modeling methodology is general, the analytical form is based on the observation that the trap states in a grain boundary are exponentially dispersed over the energy space defined by the energy gap of the adjacent grains. The dispersion relationship is parameterized by an energy EA. The complex mechanisms governing carrier transport in a TFT are modeled in terms of an effective ldquodriftrdquo mobility mueff that also accounts for the thermionic emission of charge carriers across the grain boundaries. A gate bias V pt can be identified that roughly locates the transition from the ldquopseudo-subthresholdrdquo and the ldquoturn-onrdquo regimes of operations. Techniques for the extraction of EA and the transition voltage V pt are proposed. A particularly simple expression of mueff can be obtained in terms of these and other parameters. 相似文献
3.
Hekmatshoar B. Kattamis A.Z. Cherenack K.H. Ke Long Jian-Zhang Chen Wagner S. Sturm J.C. Rajan K. Hack M. 《Electron Device Letters, IEEE》2008,29(1):63-66
We have fabricated active-matrix organic light emitting diode (AMOLED) test arrays on an optically clear high-temperature flexible plastic substrate at process temperatures as high as 285 degC using amorphous silicon thin-film transistors (a-Si TFTs). The substrate transparency allows for the operation of AMOLED pixels as bottom-emission devices, and the improved stability of the a-Si TFTs processed at higher temperatures significantly improves the reliability of the light emission over time. 相似文献
4.
Rasras M. S. Gill D. M. Earnshaw M. P. Doerr C. R. Weiner J. S. Bolle C. A. Chen Y.-K. 《Photonics Technology Letters, IEEE》2010,22(2):112-114
5.
A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure. 相似文献
6.
《Electron Device Letters, IEEE》2008,29(11):1229-1231
7.
Jun Hyuk Cheon Jung Ho Bae Jin Jang 《Electron Device Letters, IEEE》2008,29(3):235-237
In this letter, we have studied the inverted staggered thin-film transistor (TFT) using a spin-on-glass (SOG) gate insulator and a low-temperature polycrystalline silicon (poly-Si) by Ni-mediated crystallization of amorphous silicon. The p-channel poly-Si TFT exhibited a field-effect mobility of 48.2 cm2/V ldr s, a threshold voltage of -4.2 V, a gate-voltage swing of 1.2 V/dec, and a minimum off-current of < 4 times 10-13A/ mum at Vds = -0.1 V. Therefore, the gate planarization technology by SOG can be applicable to low-cost large-area poly-Si active-matrix displays. 相似文献
8.
For a thin-film transistor (TFT) built on excimer-laser crystallized polycrystalline silicon, the dependence of the effective ldquograin-boundary mobilityrdquo on the gate-to-source voltage can be divided into two subregimes exhibiting different power-law characteristics. An expression for the effective mobility is developed using a procedure previously proposed for a TFT built on polycrystalline silicon exhibiting only single power-law dependence. The additional power-law component is reflected in the model by a pair of measurable and physically meaningful parameters. The procedure for determining these parameters is described and demonstrated. Both the measured and calculated transfer characteristics are reported and compared. The double power-law dependence implies a grain-boundary trap-state energy dispersion characterized by two exponential functions. This is presently verified. 相似文献
9.
Low-Temperature Polycrystalline Silicon Thin-Film Flash Memory With Hafnium Silicate 总被引:1,自引:0,他引:1
Yu-Hsien Lin Chao-Hsin Chien Tung-Huan Chou Tien-Sheng Chao Tan-Fu Lei 《Electron Devices, IEEE Transactions on》2007,54(3):531-536
In this paper, we have successfully fabricated poly-Si-oxide-nitride-oxide-silicon (SONOS)-type poly-Si-thin-film transistor (TFT) memories employing hafnium silicate as the trapping layer with low-thermal budget processing (les600degC). It was demonstrated that the fabricated memories exhibited good performance in terms of relatively large memory window, high program/erase speed (1 ms/10 ms), long retention time (>106 s for 20% charge loss), and 2-bit operation. Interestingly, we found that these memories depicted very unique disturbance behaviors, which are obviously distinct from those observed in the conventional SONOS-type Flash memories. We thought these specific characteristics are closely related to the presence of the inherent defects along the grain boundaries. Therefore, the elimination of the traps along the grain boundaries in the channel is an important factor for achieving high performance of the SONOS-type poly-Si-TFT Flash memory 相似文献
10.
11.
12.
《Electron Device Letters, IEEE》2006,27(10):837-839
Stacks of porous silicon layers have been successfully applied to maximize internal reflection at the interface between a silicon substrate and an epitaxially grown layer. The stack is consist of alternating porous layers of high and low porosity, defined by the quarter-wavelength rule. During the hydrogen bake prior to epitaxial growth of the epitaxial layer, the porous silicon stack crystallizes in the form of thin quasi-monocrystalline silicon layers incorporating large voids. Experimental data of the measured external reflectance have been linked to the internal reflectance. An optical-path-length enhancement factor of seven was calculated in the wavelength range of 900–1200 nm. Application on thin-film epitaxial solar cells showed a 12% increase in short-circuit current and efficiency. 相似文献
13.
《Electron Devices, IEEE Transactions on》2009,56(3):441-447
14.
《Electron Device Letters, IEEE》2009,30(1):33-35
15.
16.
Brouckaert J. Roelkens G. Selvaraja S.K. Bogaerts W. Dumon P. Verstuyft S. Van Thourhout D. Baets R. 《Photonics Technology Letters, IEEE》2009,21(19):1423-1425
In this letter, we demonstrate a compact and cost-effective four-channel demultiplexer with integrated photodetectors for application in coarse wavelength-division-multiplexing systems. The device consists of a silicon-on-insulator planar concave grating (PCG) demultiplexer and heterogeneously integrated InAlAs-InGaAs metal-semiconductor-metal photodetectors, and has a footprint of only 0.1 mm2 . The PCG and integrated photodetectors have a responsivity of 0.6 A/W for TE-polarized light. The integrated device has an optical crosstalk of -25 dB. 相似文献
17.
《Display Technology, Journal of》2009,5(6):224-227
18.
Ji-Young Go Gwon Byeon Taesu Choi Shuzhang Yang Wenwu Li Yong-Young Noh 《Advanced functional materials》2023,33(44):2303759
Metal halide perovskite optoelectronic devices have made significant progress over the past few years, but precise control of charge carrier density through doping is essential for optimizing these devices. In this study, the potential of using an organic salt, N,N-dimethylanilinium tetrakis(pentafluorophenyl)borate, as a dopant for Sn-based perovskite devices, is explored. Under optimized conditions, the thin film transistors based on the doped 2D/3D perovskite PEAFASnI3 demonstrate remarkable improvement in hole mobility, reaching 7.45 cm2V−1s−1 with a low subthreshold swing and the smallest sweep hysteresis (ΔVhysteresis = 2.27 V) and exceptional bias stability with the lowest contact resistance (2.2 kΩ cm). The bulky chemical structure of the dopant prevents it from penetrating the perovskite lattice and also surface passivation against Sn oxidation due to its hydrophobic nature surface. This improvement is attributed to the bifunctional effect of the dopant, which simultaneously passivates defects and improves crystal orientation. These findings provide new insights into potential molecular dopants that can be used in metal halide perovskite devices. 相似文献
19.
In this letter, a novel structure of polycrystalline-silicon thin-film transistors (TFTs) with self-aligned raised source/drain (SARSD) and a thin channel has been developed and investigated. In the proposed structure, a thick SD and a thin active region could be achieved with only four mask steps, which are less than that in conventional raised SD TFTs. The proposed SARSD TFT has a higher on-state current and a lower off-state leakage current. Moreover, the on/off current ratio of the proposed SARSD TFT is also higher than that of a conventional coplanar TFT 相似文献
20.
Kattamis A.Z. Cheng I.-C. Ke Long Hekmatshoar B. Cherenack K.H. Wagner S. Sturm J.C. Venugopal S.M. Loy D.E. O'Rourke S.M. Allee D.R. 《Display Technology, Journal of》2007,3(3):304-308
The transition of thin-film transistor (TFT) backplanes from rigid plate glass to flexible substrates requires the development of a generic TFT backplane technology on a clear plastic substrate. To be sufficiently stable under bias stress, amorphous-silicon (a-Si:H) TFTs must be deposited at elevated temperatures, therefore the substrate must withstand high temperatures. We fabricated a-Si:H TFT backplanes on a clear plastic substrate at 200degC. The measured stability of the TFTs under gate bias stress was superior to TFTs fabricated at 150degC. The substrate was dimensionally stable within the measurement resolution of 1, allowing for well-aligned 8 times 8 and 32 times 32 arrays of pixels. The operation of the backplane is demonstrated with an electrophoretic display. This result is a step toward the drop-in replacement of glass substrates by plastic foil. 相似文献