一种新颖的鳍线单刀双掷开关

介绍一种只需要一个偏置控制端口,采用正负脉冲驱动的T形结鳍线单刀双掷开关的设计方法。在电路中采取改进措施,提高了隔离度、降低了插入损耗,测量结果表明,开关在Ka频段内,插入损耗≤1.5dB,隔离度≥30dB;在W频段内,插入损耗≤2dB,隔离度≥25dB。     

偏振调控全光开关的设计分析

给出了一种工作波长为1550nm,基于电光偏振调控的1×2全光开关的设计方法,该光开关由TE-TM模式转换器和偏振分束光栅构成.通过TE-TM模式转换器控制输出信号光的偏振态,由偏振分束光栅选择输出端口.所设计的全光开关两出射端口的串音分别低于-72dB和-33dB,可实现纳秒量级的开关速率,且串音小、结构简单,在全光...     

液晶盒表面取向排列对光敏混合液晶全光开关性能的影响

利用混合液晶,实验研究了间隔厚度为125μm的向列相液晶(NLC)盒的无定向排列、平行排列和扭曲排列3种表面取向 排列方式对全光开关性能影响。全光开关采用光 敏混合液晶(15% BMAB,85% NLCs)注入NLC盒制作而成。实验结果表明,无定向排列NLC盒 和扭曲排列NLC盒都可实现全光开关效应;扭曲排列NLC盒的表面取向作用不仅可以提 高全光开关的稳定性和重复 性,还可以提高全光开关的调制深度和响应速度;相对无定向排列NLC盒,扭曲排列NLC盒 制作的全光开 关的稳定性和上升响应速度分别提高了1倍,调制深度提高了4.8dB 。实验验证了NLC盒的表面取 向作用可提高全光开关性能,对提高结合光敏液晶和光纤制作光控全光纤器件的性能有重要 指导意义。     

1×2全内反射型有机聚合物热光开关的研制

给出了完整的全内反射型有机聚合物热光开关的设计方案,并研制成功了1×2光开关.所研制的X结结构全内反射光开关,在交叉态,具有约25dB的消光比;在全反射状态下,消光比达22dB,相应的驱动功率约为158mW(驱动电压3.2V,相应的驱动电流49.4mA).     

1×2全内反射型有机聚合物热光开关的研制

给出了完整的全内反射型有机聚合物热光开关的设计方案,并研制成功了1×2光开关.所研制的X结结构全内反射光开关,在交叉态,具有约25dB的消光比;在全反射状态下,消光比达22dB,相应的驱动功率约为158mW(驱动电压3.2V,相应的驱动电流49.4mA).     

纳秒超快速光开关

新型超快速光开关的实用开关速度高达10-80ns，内部没有运动部件，实测开关频率高达300kHz,插损值IL为0．8～10dB，PDL为0．1～0．3dB，PDM为0.2ns，串扰为-32dB。超快速光开关可用于制作可见光波段、近红外波段、980nm波段、1310nm波段、C和L波段的光开关。     

MEMS开关封装结构热形变对芯片性能的影响

模拟了处在一定功率密度或不同温度下封装结构贴片的形变引起的X波段MEMS开关芯片的形变,从而导致的开关芯片性能的变化。用Coventor软件模拟出在开关衬底为200μm,贴片处功率密度为300pW/μm2时,开关芯片的形变量为0.142μm;开关衬底为300μm,温度为373K时,开关芯片的形变量为0.791μm。进一步用HFSS模拟出开关的插入损耗在中心频率10GHz处由封装前的0.042dB和0.022dB变化为封装后的0.078dB和0.024dB。     

非对称Y分叉全内反射型全光开关

基于全内反射原理和光生载流子注入效应,研究了一种Y分叉全内反射型全光开关.当控制光(波长为805nm)的强度达到150W/mm2时,对于1310nm波长,其开关的消光比可以达到18dB,并对光注入开关机理做了简单的探讨.     

基于铒镱共掺光纤光栅的M-Z干涉型全光开关

提出了基于铒镱共掺光纤光栅的马赫-曾德尔(M-Z)干涉仪结构的光控光开关,干涉仪的一臂为铒镱共掺光纤,另一臂为铒镱共掺光纤光栅.通过泵浦光来抽运铒镱共掺光纤从而调节两个臂信号光的相位差,引起干涉的变化,从而实现了光开关的作用.实验上在10 mW的泵浦功率水平下,实现了消光比为8 dB的全光开关.     

玻璃基离子交换型宽带22 3dB耦合器研究

为满足2N光功率分配器的制作和应用的需求,对宽带集成化22 3dB耦合器进行了深入的理论和实验研究。采用3-D光束传播法,对传统的非对称X结进行了模拟改进,设计了低损耗且具有较宽工作带宽的22 3dB耦合器。采用Ag+-Na+离子交换技术在玻璃基上成功制作了非对称X结结构的宽带22 3dB耦合器。通过对1260nm~1360nm和1460nm~1600nm两个波段宽带光源的光谱测试,得到在宽带范围内小于4.0dB的插入损耗,光谱谱线相对平坦,波长依赖性较小,均匀性小于0.5dB。结果表明,采用这种非对称X结并结合离子交换工艺,可以在玻璃基上制作出宽带的22 3dB耦合器,这为进一步优化器件性能,研制成功具有应用价值的器件奠定了基础。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks