对运动目标的单站无源定位技术研究

实现对运动目标辐射源的单站无源定位是对新体制雷达对抗侦察系统的基本要求.固定单站通过测量角度、角速度和多普勒频率变化率可实现对运动目标的无源定位,该方法对角速度特别敏感,测量精度要求很高.为此,提出了一种利用波达方向、相位差变化率、载波频率及多普勒频率变化率的单站无源定位方法,结合某地面雷达对抗侦察系统,分析了其定位原理、测距误差和可观测性,给出了单次测距的计算机仿真结果和结论.仿真研究表明,通过增加相位差变化率信息降低了对角速度的高精度测量要求.     

舰载电子战系统中对运动辐射源的单站无源测距定位技术

将一种运用角度、角度变化率和多普勒频率变化率参数实现无源测距的定位技术引入舰载电子战系统使其具有对高速运动目标的单站定位能力,介绍了定位技术的原理以及参数高精度测量的实施办法。     

单站定位中切向与径向运动测距模型的等价性分析

单站无源定位在电子侦察应用中占重要地位。在对单站无源定位的2种不同理论模型简要回顾的基础上,基于干涉仪测向应用对通道间相位差变化率测量与频差测量过程进行了分析,通过相位差变化率与频差这2个物理量之间的固有关系,从理论上证明了单站无源定位中切向运动测距模型与径向运动测距模型的等价性,并通过仿真对上述理论分析结果进行了验证,揭示了单站无源定位中2种不同理论模型的统一性,从而为上述理论模型的工程应用边界条件分析提供了重要参考。     

一种关于LFM相参脉冲信号多普勒频率变化率的估计算法

LFM信号在雷达和通信中得到广泛应用,对于单站无源定位与跟踪系统来说,获取LFM信号中多普勒频率变化率信息具有十分重要的现实意义.接收信号的多普勒频率变化率十分微弱,很难精确测量.本文提出了基于渐近小波变换的多普勒频率变化率估计算法,通过对LFM信号的渐近小波变换谱做相关,增强了多普勒频率变化率信息,消除了调频率对参数估计的影响.数值仿真表明参数估计的精度接近CRLB,能达到单站无源定位与跟踪系统的精度要求.     

一种扩展多站无源探测定位范围的新方法

长基线时差定位体制的多站无源探测定位系统对采用窄波束发射的辐射源存在一定的难度,影响其实际使用.文中以多站无源探测定位装备的单个侦察站为基础,利用空频域信息实现对目标辐射源的单站无源定位.在保持现有系统硬件不变的基础上,设计了单多站一体化无源探测定位系统结构,讨论了系统实现的关键技术和解决途径,并通过仿真方法提出了单站无源定位对角度、角速度、多普勒频率参数测量的要求,这对改造现有的多站无源定位系统和扩展多站无源探测定位范围具有一定的参考意义和应用价值.仿真实验表明,单站无源定位系统对角度的测量精度要达到mrad量级,角速度的测量精度要达到mrad/s量级,多普勒频率变化率的测量精度要达到Hz/s量级.     

电子侦察无人机单站无源定位研究

无源定位在现代战争中越来越受到人们的重视。介绍了电子侦察无人机单站无源定位的方法,包括测向定位法、多普勒频率差定位法、相位差变化率定位法等,对单站无源定位技术的基本工作原理及其定位精度进行了分析,并比较了各自的性能和特点。     

相参脉冲序列频率估计的小波变换方法

在单站无源定位与跟踪系统中,接收信号的多普勒频率变化率信息对运动目标的状态估计和定位非常重要。对于脉冲体制的雷达来说,信号持续时间较短,很难精确测量多普勒频率变化率。小波变换在时频域同时具有良好的局域特性和较低的信噪比门限。文章引入了小波变换方法实现单站无源定位与跟踪系统的参数估计,推导了相参脉冲序列的小波变换方法。数值仿真证明该方法能实现脉冲的相参积累,大幅提高参数的估计精度。     

针对时差定位电子侦察卫星的有源干扰技术

由于时差无源定位电子侦察卫星具有定位精度高、覆盖区域大、重访周期短、侦察信息量大等优势,在战时对雷达的威胁程度较其他体制电子侦察卫星高,而雷达针对电子侦察卫星的对抗方式主要停留在无源对抗方式上,具有很大局限性.本文通过研究时差定位电子侦察卫星可采用的经典互相关时差估计算法,分析讨论了有源干扰对单星和双星实施干扰的两种情...     

固定单站对运动目标的无源定位

单站无源定位技术具有隐蔽性强、设备量小及系统相对独立等优点,有着较强的实用价值.以往人们对运动单站无源定位技术研究较多,而对固定单站无源定位技术研究相对较少.针对此种情况,文章对固定单站对运动目标的无源定位技术的基本原理进行了分析,并提出了多普勒变化率、到达角变化率等定位参数的测量方法.     

基于小波变换的多普勒频率变化率高精度估计方法

在单站无源定位与跟踪系统中,获取多普勒频率变化率信息对运动目标的状态估计和定位具有非常重要的意义.多普勒频率变化率非常微弱,很难精确测量.小波变换是一种时频局域化的分析方法,具有较低的信噪比门限.本文提出了基于小波变换的多普勒频率变化率估计方法,计算机仿真研究表明本文提出的方法具有较低的信噪比门限,并且可以快速精确地实现参数估计.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.