An epitaxial planar structure for the unijunction transistor

A unijunction transistor with fast recovery time and high interbase resistance is made by growing a thin high-resistivity boron-doped epitaxial layer on a low-resistivity arsenic-doped substrate. Ring-and-dot base contacts are made directly on the p-type epitaxial layer with the beam-lead contact process. With the dot grounded and a negative bias on the ring, the most positive point along the edge of the space-charge region in the epitaxy is centered below the dot. When the substrate is adequately biased in the forward direction with respect to this point, conductivity modulation of the spreading resistance under the dot begins because of minority charge injection from the substrate. Experimental devices have been made by growing a 7.1-micron 53.1-Ω.cm epitaxial layer on a 5Ω.cm substrate. Interbase resistance was ∼ 100k Ω, intrinsic stand-off ratio ∼ 0.5, holding current ∼ 1 mA, and recovery time <20 ns. The paper concludes with possible memory array and shift register circuit applications that incorporate the unit described as well as a junction-isolated version that is free of parasitic transistors.     

Programmable unijunction transistor for integrated circuits

There are a limited number of components that may be put in integrated form. By proper selection of standard components, a simulated four-layer device may be integrated to yield unijunction transistor performance. Device parameters may be determined by circuit configuration, thereby satisfying the requirements of the programmable unijunction transistor.     

Voltage-controlled negative resistance in conductance transistors with hook structure

Experimental results are presented wherein a conductance transistor with a hook structure (h.c.d.t.) has a voltage-controlled negative resistance. The I/V characteristic has practical merit, in that the current becomes nearly zero in the high-voltage region, so that it can be applied to various electronic switching circuits.     

Theory of cylindrically symmetric unijunction transistors

A general theory for near-intrinsic homogenous semiconductor material is extended to the base region of an ideal cylindrical-geometry unijunction transistor. The theory predicts static emitter characteristics for planar geometries with cylindrical symmetry. These predicted characteristics include the effects of drift, diffusion, and simple recombination, and qualitatively agree with experimental data at high injection.     

Thin-film lateral bipolar transistor in silicon-on-sapphire structure

Heteroepitaxial films of silicon-on-sapphire were used to fabricate lateral bipolar n-p-n transistors. The devices have a common-base direct-current amplification factor of 0.9 and a maximum frequency of oscillation of 2.4 GHz. As a result of the vertical p-n-junction arrangement, small junction areas are possible, e.g. 1×10?6cm2, which yield depletion-layer capacitances of 0.02?0.05 pF.     

Voltage-controlled crystal oscillators

The quartz crystal oscillator is normally thought of as a stable generator of a fixed frequency. It is possible, however, to design and construct voltage tunable quartz crystal oscillators that can be electrically tuned over a frequency range on the order of ±0.3 percent of the crystal frequency. This is accomplished with a nonlinearity between frequency and voltage on the order of 0.1 percent. Moderately good long-term frequency stability and low phase noise is exhibited by the oscillators. A reactive network including varactor diodes is used to provide a voltage variable reactance which, in combination with a quartz crystal network, forms a resonator having an antiresonant frequency that is a linear function of tuning voltage. The basic reactance network is not practically realizable. However, the application of one of Norton's network transformation theorems results in a realizable network. The oscillator described is very simple in design and provides an inexpensive solution to a large number of signal processing and measurement problems.     

A novel CMOS-compatible high-voltage transistor structure

A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, ie described. This device, which can be implemented using a standard CMOS process, is capable of handling high current densities without latching. The IBT exhibits a fivefold increase in current density compared to the lateral DMOS. A simple technique by which the switching speeds of the IBT can be improved by almost an order of magnitude without significantly compromising its current carrying capability is also presented.     

A high-performance lateral PNP transistor structure

This paper proposes a novel lateral PNP-type structure that is fully compatible with existing single-polysilicon BiCMOS processes and offers a valid alternative to shallow polysilicon emitter transistors. We have used both an analytical approach and a more accurate computer-aided design, obtaining 0.9 GHz and 4.4 GHz cutoff frequency for 2 μm and 0.8 μm minimum feature transistors, respectively     

A new complementary monolithic transistor structure

A novel complementary monolithic bipolar transistor structure has been developed. By adding one extra diffusion to the standard monolithic bipolar transistor process a pair of high current gain and very low saturation resistance n-p-n and p-n-p transistors can be fabricated on the same chip. High sheet resistances are also present in this structure.     

HBT结构的新进展

介绍了以In0.03Ga0.97As0.99N0.01材料为基区的GaAs异质结双极型晶体管和以GaAs0.51Sb0.49材料为基区的InP HBT.讨论了GaAs和InP HBT结构的新进展及其对性能的改善,并对各结构的适用范围和优缺点进行了比较.     

A new complementary bipolar transistor structure

A novel complementary monolithic bipolar transistor structure has been developed. By adding one extra diffusion to the standard monolithic bipolar transistor process, a complementary pair of high current gain and very low saturation resistance n-p-n and p-n-p transistors can be fabricated on the same chip. High sheet resistances are also present in this structure. Novel low-voltage (1.3 V) complementary digital circuits have been fabricated by this new process.     

Frequency-output sensors-transducers based on unijunction transistors

The experimental characteristics of sensors of nonelectrical quantities (temperature, magnetic field, light, and pressure) based on a unijunction transistor (UJT), which is a component of a relaxation oscillator, have been investigated. Designs of measuring sensors-transducers in which the UJT and other circuit elements serve as components sensitive to external action are presented. It is shown that, if the output parameter of the sensors is the oscillation frequency that is determined by the magnitude of the corresponding action, insertion of additional sensing elements into the circuit makes it possible to significantly increase the efficiency of the sensors-transducers.     

Complementary MOS—Bipolar transistor structure

Bipolar transistors can be used to increase the driving capabilities of complementary MOS transistors while retaining the low power dissipation feature. The fabrication of n-p-n bipolar transistors is compatible with the fabrication of the complementary MOS transistors in a monolithic structure. Common collector n-p-n transistors can be fabricated using a diffused n⁺source-drain region as emitter, a diffused p^-isolation region as base and an n^-substrate as collector with a hfegreater than 100. Lateral n-p-n transistors can be fabricated using a diffused n⁺source-drain region as emitter and collector, and p^-isolation region as base with a hfegreater than 10.     

高电子迁移率晶体管新结构

介绍了通过插入ＩｎＡｓ层到ＩｎＧａＡｓ沟道中，改善了ＩｎＡｌＡｓ／ＩｎＧａＡｓ高电子迁移率晶体管（ＨＥＭＴ）的性质，合适的ＩｎＡｓ层厚度和准确的插入位置会使在３００Ｋ时此结构的ＨＥＭＴ比普通结构的ＨＥＭＴ的迁移率和电子速度分别提高３０％和１５％。     

Voltage-controlled oscillator using dielectric resonator

A simple type of voltage-controlled oscillator using a dielectric resonator is presented for MIC applications, operating at 1.69 GHz. This gives a 0.5% tuning range, for -104 dBc/Hz FM noise     

Voltage-controlled ferroelectric lens phased arrays

A new concept for phased arrays is proposed using a voltage-controlled ferroelectric lens. The ferroelectric lens concept uniquely incorporates bulk phase shifting-the array does not contain individual phase shifters-using ferroelectric material. This will reduce the number of phase shifters from (n×m) to (n+m), where n is the number of columns and m is the number of rows in a phased array. The number of phase shifter drivers and phase shifter controls is also significantly reduced by using row-column beam steering. Thus, the ferroelectric lens concept can potentially lead to low-cost phased arrays. This paper presents the ferroelectric lens concept, theoretical analysis and design, and experimental results. The results indicate that the ferroelectric lens concept is viable and sound. Various phased-array configurations using ferroelectric lens are included. A discussion on ferroelectric materials is included along with information on a US Department of Defense program to improve ferroelectric materials     

Multiphase oscillator and multivibrator using improved unijunction transistors

The properties of multiphase oscillator and multivibrator using an improved unijunction transistor, fabricated by planar technology, were investigated. The 3-phase oscillator is very useful as the transfer pulse generator for recently developed c.c.d. and p.c.d. devices.     

Semiconductor switching device using improved unijunction transistors

The unijunction transistor has been improved to suit space multiplex electronic-exchange devices. This is a report on the transfer characteristics of the switch, whose onstate frequency response extends to about 100 MHz and whose off-state leak is suppressed below ?60 dB at 10 MHz.     

Optimization of transistor structure for transistor-stabilizedfield emitter arrays

Reliability of the metal-oxide-semiconductor field-effect transistor (MOSFET)-stabilized field emitters at high-field operation has been assessed by comparing two different MOSFET structures. Electrical characteristics and behavior of carriers in the device structure have been investigated by means of device simulation. One structure, which is referred to as the externally connected-MOSFET emitter, exhibits an anomalous increase in drain current, which is induced by impact ionization at the drain edge. Upon evaluating the emission characteristics, it was clarified that the anomalous current increase induced by the impact ionization degraded stability and controllability of the emission current significantly. The other structure, which is referred to as the MOSFET-structured emitter, shows higher reliability with negligible effect of impact ionization