140 GHz共焦波导结构回旋行波管放大器

为减少太赫兹回旋器件模式密度和降低模式竞争问题,利用具有模式选择特点的共焦波导结构作为140 GHz回旋行波管(Gyro-TWT)的高频互作用系统。在理论分析基础上,建立注波互作用计算模型并对其进行数值计算;通过对共焦波导高频场分布、衍射损耗、耦合系数以及注波互作用效率等输出参量的分析,选择HE06作为工作模式,确定了140 GHz Gyro-TWT放大器的基本结构和工作参数,并利用注波互作用非线性理论进行分析。模拟结果表明：在注电压为35 kV,注电流2 A,速度比为0.75时,该高频结构在140 GHz频点获得12 kW峰值输出功率,17.1%电子效率和38 dB饱和增益,3 dB带宽达到6 GHz。     

220 GHz回旋速调管放大器互作用理论的研究

应用注波互作用非自洽非线性模拟程序,对220GHz回旋速调管放大器的注波互作用进行了研究;分析了工作电流、工作电压、直流磁场对电子注效率影响。模拟结果表明,设计出的双腔回旋速调管放大器的电子效率为48%,相应的输出功率为20 kW。     

35GHz三次谐波低电压回旋管理论研究

用动力学理论分析了三次谐波复合腔回旋管中的注-波互作用,选取了工作点;建立了突变复合腔回旋管的自洽非线性理论模型,该模型既考虑了电子和高频场的自洽相互作用又考虑了复合腔过渡部分模式的耦合,基于该理论模型,对一只三次谐波35GHz突变结构复合腔回旋管中电子注与H₆₁-H₆₂高频场互作用进行了数值模拟,当电流20A,磁场为0.442T时,互作用效率为24%,输出功率为210kW.     

W波段二次谐波回旋行波管放大器

采用谐波工作的回旋管互作用磁场比基波磁场降低了1/s,可降低整管磁场设计难度,具有较大的应用前景。通过对W波段二次谐波回旋行波管高频介质加载结构、模式竞争和注波互作用研究,确定了该放大器的工作参数。非线性模拟表明,当应用100 kV,20 A,α=1.2的电子注时,该回旋管可在91 GHz频率处产生465 kW的输出功率和49 dB的增益结果。并且,基于耦合波理论,讨论了一个轴对称半径微扰的TE02~TE01输出模式变换器,效率在95%以上时,其带宽达到4 GHz。     

W波段回旋行波管仿真设计与热测实验

通过软件仿真方法分析和设计了W波段回旋行波管的输入输出耦合器、磁控注入式电子枪以及高频互作用电路,根据优化结果加工了实物并进行了热测实验.实验结果表明,电子注电压60 k V,电流6 A,在94 GHz频率获得了最大峰值功率78 k W,增益53.9 d B以及21.7%的效率,峰值功率大于50 k W带宽达到3.8 GHz.PIC粒子模拟和热测实验均表明,设计的W波段回旋行波管能够稳定的工作,从而证明周期加载高频互作用电路在抑制寄生模式以及自激振荡方面具有很大的优势.     

8mm二次谐波回旋速调管放大器中电子注-波互作用的研究

应用粒子模拟软件对设计的二次谐波三腔回旋速调管放大器进行了数值模拟。分析讨论了二次谐波注-波互作用过程中电子群聚的物理图景和特点，并研究了电子注电流和归一化引导中心半径对电子注-波互作用效率的影响。模拟结果表明，本文设计的二次谐波三腔回旋速调管放大器在35GHz频率可获得约293kW的峰值输出功率和约28％的电子效率。     

分布损耗回旋行波管线性分析与稳定性研究

研究了分布损耗材料导电特性的下降能够增强回旋行波管注-波互作用段对电磁波的衰减,提高了绝对不稳定性振荡的起振电流和竞争模式回旋返波振荡的起振长度;但同时减小了回旋行波管的线性增长率及其轴向功率和高频场增益.给出了石墨乳涂敷圆波导结构回旋行波管工作参数,采用电子束电流,I_0=10A、注-波互作用段长度L=10cm时的设计结果,在兼顾功率和增益的条件下,能够有效抑制不稳定性,保证其稳定工作.     

Ka波段二次谐波回旋速调管放大器的PIC模拟

该文根据谐波回旋速调管放大器的注.波互作用特点,分析了放大器稳定工作的条件:对Ka波段二次谐波三腔回旋速调管放大器的注-波互作用进行了模拟计算,对放大器的注.波互作用电路参数进行了优化设计。模拟计算结果表明,在电子注电压为70kV,电子注电流15A,工作磁场为0.685T时,在35GHz频率放大器可以获得超过250kW的输出功率,大于21dB的增益,23%的效率和约为120MHz的带宽。计算结果为实际工程设计提供了有益的参考。     

开槽波导3次谐波回旋行波放大管非线性理论与数值模拟

本文讨论了开槽圆柱波导的高频场分布,给出了注波互作用自洽非线性理论,在电子作大回旋运动与考虑速度零散的情况下,采用四阶龙格库塔法,对均匀截面开槽波导３次谐波回旋行波放大管注波互作用进行了数值计算,得出一些重要的互作用规律,为回旋行波放大管的进一步研究打下了基础。     

一种超低电压宽带调谐太赫兹回旋管互作用结构

低电压频率可调太赫兹回旋管在生物医学和波谱学等领域具有重要应用。文章分析了超低电压(<1 kV)下采用传统开放腔互作用电路的330 GHz 回旋管输出功率和频率调谐特性,探讨了超低电压下由于电子相对论效应减弱而导致的回旋管中电子注-波互作用耦合强度降低的问题。在此基础上,针对330 GHz 超低电压回旋管提出了一种改进的互作用电路结构,其下倾式尾端结构有助于增大反向波幅度,提高弱相对论电子注与电磁波之间的耦合强度,从而提高回旋管的输出效率及频率调谐带宽。非线性模拟结果表明,在低至0.3 kV 的超低电压下,采用此种互作用电路结构仍可获得大于1 W 的连续波输出功率及22 GHz 的连续调谐带宽,峰值输出效率大于7%。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.