一种新型小型化窄带腔体滤波器的设计

该文设计实现了一种高抑制、小型化结构的窄带腔体滤波器,利用加载电容的原理,在盖板一侧添加矩形金属柱,增大了耦合电容,缩小了相邻谐振腔之间的距离,从而实现了滤波器的小型化。通过CST仿真,设计了中心频率为7.325 GHz、带宽为0.25 GHz的窄带腔体滤波器。最终经过实物测试表明,频带内驻波比良好,带外抑制高,实物体积减小。     

同轴腔体窄带带通滤波器快速设计方法

为了满足卫星用滤波器研制周期短、可靠性高的要求,提出了一种快速设计经典同轴腔体滤波器的方法.该方法通过原型滤波器查表可以计算滤波器节数、耦合常数、群时延、单腔谐振频率、单腔Q值等初始值;通过使用三维电磁(EM)仿真软件得到单腔调谐钉长度和加载电容值的对应关系、两个腔体间耦合系数及端口抽头高度等模型SnP参数;通过电路仿真软件使用集总元件对电容加载的量值进行优化,极大地提高了仿真的速度.最后使用该协同仿真方法设计一同轴腔体滤波器,并对仿真结果进行了验证.     

一种宽阻带窄带腔体滤波器的设计

该文介绍了一种窄带带通腔体滤波器的原理和设计方法,通过加载电容原理,使滤波器的寄生通带远离通频带,并设计了带哑铃型横杆的谐振器结构,在谐振器连接点形成电压驻波零点,从而进一步抑制滤波器的寄生通带,实现了具有宽阻带的带通腔体滤波器。最后,利用微波仿真软件CST设计了一款中心频率为2.45 GHz,相对带宽为4.08%的窄带带通腔体滤波器。仿真结果表明,滤波器带外抑制高,阻带范围宽,通带内驻波良好,满足设计指标要求。     

高性能跳频滤波器设计

提出了一种用无源谐振腔和有源电路相结合来实现高性能跳频滤波器的方法,利用开关电容阵加载腔体实现高速宽带低损的频率跳变.重点对这种跳频滤波器的插损和功率两个指标进行分析,包括腔体无载品质因数、PIN开关的功率和插损、加载射频电容的插损.利用三维电磁仿真软件HFSS和平面电路仿真软件ADS,结合具体的技术指标要求,给出了跳...     

新型毫米波微带带通滤波器

介绍了一种新型的加载电容型毫米波微带带通滤波器。对这种滤波器进行了分析,推导出了滤波器中所用谐振单元间的耦合系数。该滤波器通过加载电容而出现慢波效应,使得在不改变电路性能的情况下,减小了电路尺寸。同时由于电路中加载电容形成的慢波效应而出现了带阻效应,因此对谐波有很好的抑制作用。利用高频分析软件CST仿真分析并设计了这种新型的加载电容型毫米波微带带通滤波器,实验结果与设计曲线结果相符。     

低频段高抗振大功率滤波器的小型化设计

该文设计了一款电容加载结构的小型化腔体滤波器。谐振器端头采用圆盘结构的电容加载,并使用四氟乙烯材料在谐振杆中间位置进行支撑加固;计算过程中,为三维电磁模型添加了集总端口,与电路模型联合仿真进行参数优化。通过三维电磁环境下的功率容量分析,该滤波器满足大功率指标要求。     

宽带同轴腔体滤波器的设计

首先分析了宽带滤波器的制作难点,利用同轴腔体的形式实现了一款宽带带通滤波器,并通过加载电容的原理实现了滤波器的小型化。最后通过仿真软件CST设计了中心频率4.24GHz,带宽为44.3%的宽带滤波。结果表明,滤波器实物在整个频带内电压驻波比、带外抑制良好,满足手持雷达装置使用要求。     

一种小型化腔体带阻滤波器的设计

腔体滤波器由于具有结构牢固,性能稳定可靠,散热性好,品质因数(Q)高,损耗小及功率容量高等特点,使其在各类微波系统中得到广泛运用.为了使某腔体带阻滤波器小型化,在保证阻带带宽大于200 MHz和阻带抑制大于30 dB的情况下,通过优化谐振腔的电容加载结构及优化谐振腔的排列方式,将滤波器的高度降低了50％,长度减小了17...     

低频段腔体滤波器的小型化设计

介绍一种微波低频段腔体滤波器的设计方法。首先给出多种加载腔体的结构形式进行分析比较,并通过2个设计实例和测试结果,证明采用双同轴腔体加载形式,可以实现结构的微型化。该结构与普通的加载型腔体滤波器相比,谐振器长度可以极大缩短,腔体也能保持比较高的Q值。     

基于双同轴阶跃阻抗谐振器的带通腔体滤波器的设计

介绍了一种减小腔体滤波器体积的设计方法。分析了双同轴阶跃阻抗谐振器的谐振条件和未加载Q值,依据滤波器理论和运用HFSS软件设计了一个基于双同轴阶跃阻抗谐振器的带通腔体滤波器。在3.7～3.9 GHz的频带内,该滤波器插入损耗小于0.5 dB,回波损耗大于20 dB,测试与仿真结果相吻合。该滤波器具有体积小、结构简单易于加工等优点。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.