高功率发射机结构及其动力学分析

一种由4只大功率功放电源机柜、1只水冷机柜、1只大功率合成器组成的舰载雷达高功率固态发射机,其大功率功放电源机柜上部浮动安装了功放组件功率合成器,微波功率从顶部输出,机柜安装误差可以补偿.大功率功放电源机柜可根据功率和结构布局进行组合,通用性强.并且4只大功率功放电源机柜对称布局,相互间刚性连接,实现了微波大功率的最优合成.文中针对舰载环境要求,建立了发射机结构分析的有限元模型,进行了动力学分析.     

L波段90kW固态发射机的设计

介绍了某雷达集中式大功率固态发射机功放组件、功率分配／合成器、电源系统、控制监控单元、结构冷却系统的设计,分析了电路对称性对发射机合成效率的影响。     

大功率固态功放合成效率研究

应用散射参数理论对大功率合成器的合成效率进行了计算推导,分析了合成效率的各种影响因素,推导出合成效率所能达到的最大值,并且给出最大合成效率的条件.这对于进行S频段连续波800 W固态功放研制打下很好的理论基础.     

S波段大功率合成器

S波段大功率合成器是某雷达固态发射机攻关技术之一。研制成功的大功率合成器除具有损耗小、分配比平衡、隔离度高、相位一致性好、承受功率大等特点外，还具有连接方便、结构紧凑的特点。该大功率合成器很好地解决了发射机合成中的关键问题。     

C波段GaN固态功放及其功率合成器研制北大核心CSCD

介绍了一种C波段高功率高效率GaN固态功率放大器及其径向同轴功率合成器研究成果,基于该功率合成器设计出一种C波段输出功率110 W(CW)、效率40%的高效率GaN功率放大器。实验测试结果:表明采用四路C波段30 W GaN功放径向同轴功率合成方法,其功率合成效率达93%,解决了实际工程应用中C波段高功率微波功率放大器的高效率问题,为下一步研制更高性能高效率高功率固态功率放大器探索出一种可行的技术方法。     

Ka波段100W固态功率合成器

随着科技发展,对大功率的需求越来越高,但是单个固态功率放大器输出功率有限,功率合成技术应运而生。文章介绍了一种利用波导实现Ka波段芯片级功率合成的方法。首先介绍了两路波导功率合成器的模型,分析了影响功率合成效率的因素,推导出合成效率最大化的条件。然后借助HFSS软件进行仿真优化,依托精密机加工技术制作出来的波导功率合成器可以在4GHz带宽内VSWR<1.5,LOSS<0.5dB。合成的基本单元3W模块由两个1.8W的MMIC通过Lange桥合成,在装入壳体合成之前单独调试,确保功率相等,相位一致。最后采用该合路器在35GHz~35.4GHz的工作频率内成功获得100W的合成功率,合成效率达85%以上,测试数据和模拟数据基本吻合。     

Ku波段宽带大功率多芯片合成设计

设计针对多个Ku波段宽带MMIC功率放大芯片进行大功率合成.对波导多路功率合成结构进行了分析,基于单个Ku波段6W功放单片,进行了16路的功率合成,研制出了工作在12～17 GHz,带宽达到6 GHz的固态功率放大器.通过测试发现该固态功率放大器的输出功率≥70 W,功率增益≥15 dB,工作电压48 V,效率≥16％...     

C波段GaN空间合成固态功率放大器

GaN功率器件具有高功率密度和高效率的优点,配合高合成密度和高合成效率的功率合成器,可以有效地提高功放的效率和减小功放的体积。开发了一种高密度、高效率的C波段空间功率合成技术,并且基于南京电子器件研究所自主研制的GaN功率器件进行了16路的功率合成,获得了800 W的输出功率和28%的功率附加效率,合成效率达到88%以上。     

Ka波段16W脉冲功率放大器的研制

Ka波段毫米波功率放大器的输出功率往往受限于功率合成部分的损耗,其合成器多路之间的隔离度、多级放大模块的级间匹配好坏及整体散热性能是影响整个功放可靠性的重要因素.针对上述毫米波固态功放的特点,提出了一种新颖的高效高可靠性的Ka波段宽带功率合成结构,采用低损耗的多支节波导作为功率分配/合成单元,结合以双探针波导-微带转换结构,实现了高效率的8路功率合成,各路之间隔离度大于25 dB,保证了功率合成器的高可靠性.以此为基础成功研制出一个脉冲式Ka波段固态功率放大器模块,该模块在33～37 GHz频段内,最高输出功率大于16 W,小信号增益大于55 dB,功率合成效率达到87%.     

Ku波段四路径向功率合成器的设计与实现

介绍了径向合成技术,并对径向波导的电磁场进行了分析,提出了一种新型功率合成器结构。并对基于径向合成技术的Ku波段四路功率合成器的结构进行设计,利用CST软件对该合成器的表面电流分布、能量密度、插损和驻波特性进行仿真。仿真结果表明,基于径向合成技术的Ku波段四路功率合成器的插损和驻波特性优良,完全适用于需求输出大功率的Ku波段的功放组件,突破了工程化应用的技术瓶颈。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.