Ni-Cu-Zn Ferrites for Low Temperature Firing: I. Ferrite Composition and its Effect on Sintering Behavior and Permeability

Ni-Cu-Zn ferrites of composition Ni_{1 − x − y}Cu_yZn_xFe₂O₄ with 0.4 ≰ x ≰ 0.6 and 0 ≰ y ≰ 0.25 were prepared by standard ceramic processing routes. The density of samples sintered at 900^∘C increases with copper concentration y. Dilatometry reveals a significant decrease of the temperature of maximum shrinkage with y. The permeability has maximum values of μ = 500–1000 for x = 0.6. The Curie temperature is sensitive to composition and changes form about 150^∘C for x = 0.6 to T_c > 250^∘C for x = 0.4, almost independent on the Cu-content. A small iron deficiency in Ni_0.20Cu_0.20Zn_{0.60 + z}Fe_{2 − z}O_{4 − (z/2)} with 0 ≰ z ≰ 0.06 significantly enhances the density of samples sintered at 900^∘C. The maximum shrinkage rate is shifted to T < 900^∘C. These compositions are therefore appropriate for application in low temperature co-firing processes. The permeability is reduced with z, hence a small z = 0.02 seems to be the optimum ferrite composition for high sintering activity and permeability.     

Synthesis of nanocomposites of PMN-PT-BT with metal oxides via surface modification

Low-temperature-sinterable PMN-PT-BT [0.96 (0.91Pb(Mg_1/3Nb_2/3)O₃-0.09PbTiO₃)-0.04BaTiO₃] powder was first prepared by the modified mixed oxide method and then metal (M = Cu, Mg, Ag) oxides were introduced as their nitrate salts. Precalcined PMN-PT-BT/MO composite powders were surface modified with the magnesia sol to suppress diffusion of Ag or metal oxides. Such prepared composite powders were sintered > 98% T.D. at 850–900^∘C and showed homogeneous microstructures with <100 nm Ag or metal oxide particles. Nanoparticles were located mostly in grains and some on grain boundaries. Grain growth was substantially inhibited and resulted in grain size of ∼2 μm. The nanocomposites of PBT/Ag and PBT/MgO showed substantially improved sintered densities and dielectric properties at sintering temperature below 1000^∘C, but the PBT/CuO composite was hardly affected. The PBT/Ag composites treated with the MgO sol showed good handling strength of MOR > 120 MPa. The proper amount of the magnesia sol for surface modification seemed to be 0.5–1.0 wt.     

Liquid phase low temperature sintering of niobate and cerate fine powders

The efficiency of simultaneous application of chemically-derived starting powders and melt-forming sintering aids in low temperature sintering has been demonstrated. Doping of cryochemically processed BiNbO₄ powders with CuO/V₂O₅ causes reducing sintering temperatures from 850–900^∘C to 700–720^∘C. Similar doping of Zn₃Nb₂O₈ fine powders allows to obtain ceramics with density 97–98% and Q × F values up to 40 000 GHz at T > 720^∘C. The sintering of solution-derived BaCeO₃ powders doped with CuO results in dense ceramics at T = 1000^∘C. Morphological evolution during sintering was observed using hot stage SEM. Low temperature liquid phase sintering of fine powders is rather sensitive to the traces of secondary phases and to the micromorphology of starting powders though observed reduction of sintering temperatures is substantially larger than for traditional liquid phase sintering of coarse-grained oxide powders.     

Dielectric properties of the BaTiO3-AlN-additive system

The mixed system of BaTiO₃ and AlN has been investigated in terms of dielectric properties and microstructure. Two different types of additives, bismuth oxide and bismuth borosilicate glass, were used to lower sintering temperature. First, the addition of a fixed content (3 wt.%) of Bi₂O₃ provided densification at 1200^∘C where monotonous decreases of dielectric constant were found with increasing the content of AlN. On the other hand, the bismuth borosilicate glass was effectively used to decrease firing temperature to 850^∘C, which is suitable for thick film capacitor applications. A practical demonstration of thick film capacitors using a Ag electrode on a 96% alumina substrate indicated that the optimum composition of 76BaTiO₃-20AlN-4glass may be adequate for generating k of 79.4 and tan δ of 0.014 at 1 MHz as a result of the low temperature firing of 850^∘C in air atmosphere.     

Effect of B2O3 and CuO on the sintering temperature and microwave dielectric properties of the BaTi4O9 ceramics

The effect of B₂O₃ and CuO on the sintering temperature and microwave dielectric properties of BaTi₄O₉ ceramics was investigated. The BaTi₄O₉ ceramics were able to be sintered at 975^∘C when B₂O₃ was added. This decrease in the sintering temperature of the BaTi₄O₉ ceramics upon the addition of B₂O₃ is attributed to the formation of BaB₂O₄ second phase whose melting temperature is around 900^∘C. The B₂O₃ added BaTi₄O₉ ceramics alone were not sintered below 975^∘C, but were sintered at 875^∘C when CuO was added. The formation of BaCu(B₂O₅) second phase could be responsible for the decrease in the sintering temperature of the CuO and B₂O₃ added BaTi₄O₉ ceramics. The BaTi₄O₉ ceramics containing 2.0 mol% B₂O₃ and 5.0 mol% CuO sintered at 900^∘C for 2 h have good microwave dielectric properties of ε_r = 36.3, Q× f = 30,500 GHz and τ_f = 28.1 ppm/^∘C     

Control of 0.2CaTiO3-0.8Li0.5Nd0.5TiO3 microwave dielectric ceramics by additions of Bi2Ti2O7

Ceramics of 0.2CaTiO₃-0.8Li_0.5Nd_0.5TiO₃) have been prepared by the mixed oxide route using additions of Bi₂O₃-2TiO₂ (up to 15 wt%). Powders were calcined 1100^∘C; cylindrical specimens were fired at temperatures in the range 1250–1325^∘C. Sintered products were typically 95% dense. The microstructures were dominated by angular grains 1–2 μm in size. With increasing levels of Bi₂O₃-2TiO₂ additions, needle and lath shaped second phases developed. For Bi₂Ti₂O₇ additions up to 5 wt%, the relative permittivity increased from 95 to 131, the product of dielectric Q value and measurement frequency increased from 2150 to 2450 GHz and the temperature coefficient of resonant frequency (τ _f ) increased from −28pp/^∘C to +22pp/^∘C. A product with temperature stable τ _f could be obtained at ∼2 wt% Bi₂Ti₂O₇ additions. For high levels of additives, there is minimal change in relative permittivity, the Qxf values degrade and τ _f becomes increasingly negative.     

Thermoelectric properties of p-type Bi0.5Sb1.5Te3 compounds fabricated by spark plasma sintering

P-type thermoelectric Bi_0.5Sb_1.5Te₃ compounds were prepared by the spark plasma sintering method with temperature ranges of 300–420^∘C and powder sizes of ∼75 μm, 76–150 μm, 151–250 μm. As the sintering temperature increased, the electrical resistivity and thermal conductivity of the compound were greatly changed due to an increase in the relative density. The Seebeck coefficient and electrical resistivity were varied largely with decreasing the powder size. Subsequently, the compound sintered at 380^∘C with the powders of ∼75 μm showed the maximum figure-of-merit of 2.65 × 10⁻³K⁻¹ and the bending strength of 73 MPa.     

Influence of sintering temperatures on the electrical property of bismuth sodium titanate based piezoelectric ceramics

A systematic investigation of cerium and stannum doped 0.94(Bi_0.5Na_0.5)TiO₃−0.06BaTiO₃ (Sn&Ce-BNT6BT) based lead-free piezoelectric ceramics is undertaken to understand the influence of sintering temperature on electrical properties. The X-ray diffraction patterns showed that all of the Sn&Ce-BNT6BT ceramics exhibited a single perovskite structure with the co-existence of the rhombohedral and tetragonal phase. The smaller grain size of Sn&Ce-BNT6BT ceramics was obtained at lower sintering temperature, and more cubical grains of Sn&Ce-BNT6BT ceramics were obtained at higher sintering temperature. The temperature dependence of dielectric permittivity of the compositions exhibited strong dispersion with the increasing temperature, and the dielectric loss tangent increased dramatically while the temperature over 225^∘C. The depolarization temperature T _d of Sn&Ce-BNT6BT ceramics sintered at 1160^∘C was 92.6^∘C. The remnant polarizations P _r for Sn&Ce-BNT6BT ceramics sintered at 1120 and 1200^∘C were found to be 28.8 and 33.4 μC/cm² at room temperature, respectively.     

Influence of substitution on dielectric diffuseness in Ba<Subscript>(1-x)</Subscript>Bi<Subscript>(2+2x/3)</Subscript>Nb<Subscript>2</Subscript>O<Subscript>9</Subscript> ceramics prepared by chemical precursor decomposition method

Barium bismuth niobate, Ba_(1-x)Bi_(2+2x/3)Nb₂O₉ (BBN with x = 0.0, 0.1, 0.2, 0.3, 0.4) ceramic powders in the nanometer range were prepared by chemical precursor decomposition method (CPD). The single phase layered perovskite was prepared throughout the composition range studied. No intermediate phase was found during heat treatment at and above 600°C. The crystallite size and the particle size, obtained from XRD and TEM respectively, were in the range of 15–30 nm. The addition of Bi₂O₃ substantially improved the sinterability associated with high density (96%) which was otherwise difficult in the case of pure BaBi₂Nb₂O₉ (BBN x = 0.0). The sintering was done at 900°C for 4 h. The relative permittivity of BBN ceramics at both room temperature and in the vicinity of the temperature of maximum permittivity (T_m) has increased significantly with increase in bismuth content and loss is also decreased to a certain level of bismuth doping. T_m increased with increase in Bi₂O₃. The diffuseness (γ) in the phase transition was found to increase from 1.54 to 1.98 with the increase in Ba²⁺ substitution level from x = 0.0 to x = 0.3.     

Effects of strontium gallate additions on sintering behavior of gadolinia-doped ceria

The densification behavior and grain growth of Ce_0.8Gd_0.2O_1.9 ceramics were investigated with the strontium gallate concentration ranging from 0 to 5 mol%. Both the sintered density and grain size were found to increase rapidly up to 0.5 mol% Sr₂Ga₂O₅, and then to decrease with further addition. Dense Ce_0.8Gd_0.2O_1.9 ceramics with 97% of the theoretical density could be obtained for 0.5 mol% Sr₂Ga₂O₅-added specimen sintered at 1250^∘C for 5 h, whereas pure Ce_0.8Gd_0.2O_1.9 ceramics needed to be sintered at 1550^∘C in order to obtain an equivalent theoretical density. The addition of Sr₂Ga₂O₅ was found to promote the sintering properties of Gd₂O₃-doped CeO₂.     

Application of spark plasma sintering for growing dense Pb(Mg1/3Nb2/3)O3–35 mol% PbTiO3 single crystal by solid-state crystal growth

This study examined the effect of spark plasma sintering (SPS) on the densification behavior and resulting dielectric and piezoelectric properties of Pb(Mg_1/3Nb_2/3)O₃–35 mol% PbTiO₃ ceramics with a 5 mol% excess of PbO. Through normal sintering at 1200^∘C, the density of the specimen reached only 92% of the theoretical density (TD). However, with the SPS treatment, the density of the PMN-PT ceramics increased to more than 99% of the TD at 900^∘C, and maintained over 98% of the TD during subsequent heat-treatment at 1200^∘C for 10 h. The increased density of the Pb(Mg_1/3Nb_2/3)O₃–35 mol% PbTiO₃ ceramics resulted in an improvement in the dielectric and piezoelectric properties. The SPS treatment was also successfully applied to the densification of a PMN-PT single crystal grown on a BaTiO₃ seed crystal using a solid-state crystal growth (SSCG) process.     

Low-temperature sintering and electrical properties of (1−x)Pb(Zr0.5Ti0.5)O3-xPb(Cu0.33Nb0.67)O3 ceramics

Electrical properties and sintering behaviors of (1 − x)Pb(Zr_0.5Ti_0.5)O₃-xPb(Cu_0.33Nb_0.67)O₃ ((1 − x)PZT-xPCN, 0.04 ≤ x ≤ 0.32) ceramics were investigated as a function of PCN content and sintering temperature. For the specimens sintered at 1050^∘C for 2 h, a single phase of perovskite structure was obtained up to x = 0.16, and the pyrochlore phase, Pb₂Nb₂O₇ was detected for further substitution. The dielectric constant (ε _r), electromechanical coupling factor (K_p) and the piezoelectric coefficient (d ₃₃) increased up to x = 0.08 and then decreased. These results were due to the coexistence of tetragonal and rhombohedral phases in the composition of x = 0.08. With an increasing of PCN content, Curie temperature (T_c) decreased and the dielectric loss (tanδ) increased. Typically, ε_r of 1636, K_p of 64% and d₃₃ of 473pC/N were obtained for the 0.92PZT-0.08PCN ceramics sintered at 950^∘C for 2 h.     

Microwave dielectric properties of Ca[(Li1/3Nb2/3)1−x Tix]O3−δ ceramics with glass

The effect of the addition of glass on the densification, low temperature sintering, and microwave dielectric properties of the Ca[(Li_1/3Nb_2/3)_1−x Ti_x]O_3−δ(CLNT) was investigated. Addition of glass (B₂O₃-ZnO-SiO₂-PbO system) improved the densification and reduced the sintering temperature from 1150^∘C to 900^∘C of Ca[(Li_1/3Nb_2/3)_1−x -Ti_x]O_3−δ microwave dielectric ceramics. As increasing glass contents from 10 wt% to 15 wt%, the dielectric constants (ε_r) and bulk density were increased. The quality factor (Q⋅f₀), however, was decreased slightly. The temperature coefficients of the resonant frequency (τ_f) shifted positive value as increasing glass contents over Ti content is 0.2 mol. The dielectric properties of Ca[(Li_1/3Nb_2/3)_0.75Ti_0.25]O_3−δ with 10 wt% glass sintered at 900^∘C for 3 h were ε_r = 40 Q·f₀ = 11500 GHz, τ_f = 8, ppm/°C. The relationship between the microstructure and dielectric properties of ceramics was studied by X-ray diffraction (XRD), and scanning electron microscope (SEM).     

Temperature Sensitive Properties of the La(Ti<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>)O<Subscript>3</Subscript> System

The electric mechanisms of perovskite-type LaMnO₃ was investigated with B-site substitution in this paper. Samples of La(Ti_xMn_{1 − x})O₃ (0.1 ≰ x ≰ 0.7) were sintered at different temperature. The voltage-temperature (V-T) curves of the samples were tested from room temperature (25^∘C) to 300^∘C, then the electric properties were measured and analyzed. The experimental results showed that the resistivity-temperature (ρ-T) curves of the samples matched NTC characteristic. The resistivity increased slightly with the increase of Ti amount as x was less than 0.5, however, it rose greatly after x exceeded 0.5; The sintering temperatures have a little influence on the resistivity, except for the sample with x = 0.7.     

Synthesis of Pb(Ni1/3Nb2/3)0.72Ti0.28O3 perovskite ceramics by a reaction-sintering process

Pb(Ni_1/3Nb_2/3)_0.72Ti_0.28O₃ (PNNT) perovskite ceramics produced by a reaction-sintering process were investigated. Without any calcination, the mixture of PbO, Ni(NO₃)₂, Nb₂O₅ and TiO₂ was pressed and sintered directly into PNNT ceramics. PNNT ceramics of 100% perovskite phase were obtained. For PNNT sintered for 2 h in PbO compensated atmosphere, maximum density reaches a value 8.49 g/cm³ (99.8% of the theoretical value) at 1250^∘C. A maximum dielectric constant 20600 occurred around 37^∘C at 1 kHz in PNNT sintered at 1250^∘C for 2 h.     

Microwave Dielectric Properties of CuO-V<Subscript>2</Subscript>O<Subscript>5</Subscript>-Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>-Doped ZnNb<Subscript>2</Subscript>O<Subscript>6</Subscript> Ceramics with Low Sintering Temperature

Microwave dielectric properties of low temperature sintering ZnNb₂O₆ ceramics doped with CuO-V₂O₅-Bi₂O₃ additions were investigated systematically. The co-doping of CuO, V₂O₅ and Bi₂O₃ can significantly lower the sintering temperature of ZnNb₂O₆ ceramics from 1150 to 870C. The secondary phase containing Cu, V, Bi and Zn was observed at grain boundary junctions, and the amount of secondary phase increased with increasing CuO-V₂O₅-Bi₂O₃ content. The dielectric properties at microwave frequencies (7–9 GHz) in this system exhibited a significant dependence on the relative density, content of additives and microstructure of the ceramics. The dielectric constant ( _r) of ZnNb₂O₆ ceramics increased from 21.95 to 24.18 with increasing CuO-V₂O₅-Bi₂O₃ additions from 1.5 to 4.0 wt%. The quality factors (Q× f) of this system decreased with increasing CuO-V₂O₅-Bi₂O₃ content and ranged from 36118 to 67100 GHz for sintered ceramics, furthermore, all Q× f values of samples with CuO-V₂O₅-Bi₂O₃ additions are lower than that of un-doped ZnNb₂O₆ ceramics sintered at 1150C for 2 h. The temperature coefficient of resonant frequency ( _f) changed from –33.16 to –25.96 ppm/C with increasing CuO-V₂O₅-Bi₂O₃ from 1.5 to 4.0 wt%     

Effects of Glass Phase Additions and Stoichiometry on the Ba(Zn<Subscript>1/3</Subscript>X<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> (<Emphasis Type="Italic">X</Emphasis> = Ta or Nb) Sinterability and Dielectric Properties

Ba(Zn_1/3X_2/3)O₃ materials where X = Ta or Nb (respectively named BZT and BZN) exhibit attractive properties suitable for applications in type I Multi Layer Ceramics Capacitors (MLCC). Nevertheless, to produce such components using Base Metal Electrodes such as copper, a significant reduction of their sintering temperature is required. The aim of this work is first to study the effects of glass phases additions and secondly the stoichiometry influence on the sintering temperature of BZT and BZN. It is shown for example, that our materials can be sintered in air at a temperature lowered by 450C when sintering agents (B₂O₃ with LiF) are combined with a slight non-stoichiometry. The sintered samples are characterised in terms of final density, microstructure and phase content and it was underlined that such modifications (additions and stoichiometry) does not affect the dielectric properties.     

Influences of starting particulate materials on microstructural evolution and electrochemical activity of LSM-YSZ composite cathode for SOFC

LSM-YSZ composite electrodes are prepared from a mixture of YSZ and LSM particles. Commercial YSZ particles were mixed with polymerizable complex method-driven LSM powders of two different particle sizes, 81 and 210 nm. The correlations between sintering temperature, microstructure and performance of composite cathode have been studied. It was found that optimum sintering temperature differs depending upon the LSM particle size. The composite cathode derived from finer LSM particles displayed lowest polarization resistance ∼0.46 Ωcm² when sintered at 1100^∘C, whereas the same resistance was observed for the electrode involving larger LSM sintered at 1200^∘C. The microstructural changes evolved during the course of sintering and the resulting electrodes were investigated by scanning electron microscopy and impedance spectroscopy.     

Low temperature sintering and microwave dielectric properties of Ba3Ti5Nb6O28 with B2O3 and CuO additions

The low sintering temperature and the good dielectric properties such as high dielectric constant (ε _r ), high quality factor (Q × f), and small temperature coefficient of resonant frequency (TCF) are required for the application of chip passive components in wireless communication low temperature co-fired ceramics (LTCC). In the present study, the sintering behaviors and dielectric properties of Ba₃Ti₅Nb₆O₂₈ ceramics were investigated as a function of B₂O₃-CuO content. The pure Ba₃Ti₅Nb₆O₂₈ system showed a high sintering temperature (1250^∘C) and had the good microwave dielectric properties: Q × f of 10,600 GHz, ε _r of 37, TCF of −12 ppm/^∘C. The addition of B₂O₃-CuO was revealed to lower the sintering temperature of Ba₃Ti₅Nb₆O₂₈, 900^∘C and to enhance the microwave dielectric properties: Q × f of 32,500 GHz, ε _r of 40, TCF of 9 ppm/^∘C. From the X-ray photoelectron spectroscopy (XPS) and X-ray powder diffraction (XRD) studies, these phenomena were explained in terms of the reduction of oxygen vacancies and the formation of secondary phases having the good microwave dielectric properties.     

Effect of attrition milling on the piezoelectric properties of Bi0.5Na0.5TiO3-based ceramics

Bismith sodium titanate (BNT)-based powders were prepared by conventionally mixed-oxide method using Bi₂O₃, Na₂CO₃ and TiO₂. The La₂O₃ was added as the modifier to the BNT composition for easily poling and reducing an abnormal dielectric loss at high temperatures. In this study, the investigated compositions were Bi_0.5Na_0.5TiO₃ and Bi_0.5Na_0.485La_0.005TiO₃. The powders were calcined at 900 °C for 2 h by slow heating rate at 100 °C/h. The calcined BNT-based powders were then attrition-milled for 3 h with a high speed at 350 rpm. After drying, the fine powders were uniaxially pressed and then cold-isostatically pressed (CIP) at 240 MPa for 10 min. All pressed pellets were sintered at 1000–1100 °C for 2 h in air atmosphere. The microstructure of sintered pellets was investigated by SEM. Results of dielectric and piezoelectric property measurement were also reported.