超强脉冲激光辐照固体靶背表面的光辐射

在超强脉冲激光与固体靶相互作用中,利用光学CCD相机和光学多道分析仪(OMA),分别在固体薄膜靶背表面法线方向测量了光辐射积分成像图案和光谱。测量结果显示,光辐射空间分布图案呈圆环状,而辐射区域有发散角、有光强分布,包含多种辐射成分;光辐射光谱在800nm附近出现尖峰,是激光的基频(ω0)波,这一现象归因于超热电子束在输运的过程中产生的微束团而引起的相干渡越辐射(CTR);如果考虑超热电子的产生和加热机制,共振吸收和真空加热对超热电子都有贡献,其中占主导地位的加热机制则是共振吸收对电子的加热。     

相对论激光-固体靶作用中超热电子能谱测量

报道了100TW超短脉冲钛宝石激光装置上相对论强度激光-固体靶相互作用中超热电子的能谱测量,获得了靶前法线和靶后激光传输方向超热电子能谱。在靶前法线方向,能谱呈单温类麦克斯韦分布,占主导地位的加速机制是共振吸收;靶后激光传输方向,在较低能段能谱呈类麦克斯韦分布,存在的加热机制是有质动力V×B加热,在较高能段能谱出现了高能尾部。对其形成原因进行了分析。     

超热电子能谱分布各向异性的实验研究

报道了100 TW超短脉冲钛宝石激光装置上飞秒激光-固体靶相互作用中超热电子的能谱测量,获得了各向异性分布的超热电子能谱.靶前激光反射方向超热电子能谱和靶前法线方向超热电子能谱类似,呈单温类Maxwell分布;而靶后激光传播方向超热电子能谱出现高能尾部;靶前法线方向超热电子的产额比靶后激光传播方向和靶前激光反射方向要高得多.对以上形成的原因进行了分析.     

激光等离子体相互作用中的自生磁场和超热电子热输运

应用相对论电磁粒子模拟程序,研究了线性极化强激光入射到无碰撞密度均匀等离子体时被加速的超热电子及电磁不稳定性机制。讨论了电磁不稳定性激发的自生磁场和超热电子热传导特性。 用Spitzer-Harm理论分析了电子热传导中能量的运输情况,观察到由激光的非等方加热引起的电子纵向加热现象。结果表明,不稳定性激发的强电磁场使电子束在1 μm的距离内沉积能量,同时对在激光有质动力推开电子时形成的电子热流产生抑制作用。     

激光等离子体韧致辐射及其连续谱的测量

本文介绍激光等离子体韧致辐射X光连续谱的产生和测量,并给出了研制的韧致谱仪和测量的结果。     

激光诱导紫铜等离子体过程中的逆韧制辐射效应

为了研究激光等离子体相互作用过程中逆韧制辐射效应,用1064nm Nd:YAG激光器诱导产生紫铜等离子体,建立3条铜原子谱线的Boltzmann图,计算得到紫铜等离子体的电子温度为6902K。通过测量铜原子谱线324.75nm的Stark展宽,计算得到紫铜等离子体的电子密度为3.6×1017cm-3;基于铜等离子体的特征参量,得到紫铜等离子体的逆韧制辐射系数是0.021cm-1。结果表明,该光谱分析方法可以在避免对等离子体产生扰动的情况下,得到等离子体的特征参量。     

强场物理中超热电子的产生及输运

在100TW超短脉冲钛宝石激光装置上完成了飞秒激光-固体靶相互作用中超热电子的产生及输运特性的实验研究。获得了超热电子的能谱、产额、注量和总能量。结果表明,随着功率密度的增加,靶前法线方向的超热电子更容易产生;超热电子的注量和总能量随靶厚度的增加而减少。超热电子约80%的能量主要沉积在靶内的前10μm,分析表明,这主要是静电场的影响所致。     

纳秒/皮秒双束激光联合驱动双层靶的γ辐射特性

基于神光Ⅱ升级装置,研究了纳秒/皮秒双束激光联合驱动双层靶的伽马(γ)辐射特征。利用ns束激光与CH薄膜靶相互作用,产生大尺度近临界密度等离子体,然后将ps束激光作用在该等离子体上,产生高能电子,高能电子穿过2 mm厚的Au靶,通过轫致辐射产生γ射线。对不同方向的γ辐射能谱和靶室外的γ辐射剂量分布进行实验测量,发现γ辐射集中在激光前冲方向,具有较小的发散角,而且在该方向上高能段的γ辐射较强。这说明双层靶的设计可以提高ps束激光与等离子体的能量耦合效率,提高高能电子温度,增加高能电子数目,有利于高能段γ辐射在ps束激光的前冲方向集中。另外,在靶室外距离靶点1.25 m处测到的50 keV以上γ辐射的单发次最大剂量为277 μGy。本研究结果对γ辐射的防护和应用具有参考价值。     

利用含纯增长模式线的异常非相干散射谱反演扰动电子温度

基于平衡态非相干散射理论的GUISDAP程序包在拟合含有纯增长模式线的非相干散射功率谱及反演加热扰动电离层参量中存在严重误差,该文提出一种以未加热时刻的电离层参量为先验信息,利用最小二乘法搜寻最佳高斯峰描述纯增长模式线来修正实测非相干散射谱,并使用电子超高斯分布的非相干散射理论拟合修正后非相干散射谱来反演获取加热扰动电子温度的方法。通过将该方法用于分析2010年秋季我国在挪威开展的电离层加热实验数据表明：利用该方法对含纯增长模式线的实测谱修正拟合后获得的电子温度比未加热时刻提高约800 K左右,增幅比例约13%~50%,该结果与现有文献报道的电离层加热引起的电子温度增幅范围吻合较好。结论表明该方法适用于基于含纯增长模式线的非相干散射谱反演扰动电离层参量。     

强场物理中超热电子能量沉积特性的实验研究

报道了在100 Tw超短脉冲掺钛蓝宝石激光装置上,完成的飞秒激光-固体靶相互作用中超热电子的能量沉积实验,获得了靶后激光传播方向超热电子的能谱、产额、注量和总能量.结果表明,超热电子的注量和总能量随靶厚的增加而减少,超热电子约80%的能量主要沉积在靶内的前10μm,分析其原因是由于静电场的影响所致.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.