共查询到20条相似文献,搜索用时 78 毫秒
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《固体电子学研究与进展》2017,(1)
为适应肖特基二极管降低正向导通电压和制造成本的需要,采用150mm的掺P硅抛光片为衬底,通过化学气相沉积制备高阻硅外延层。利用傅里叶变换红外线光谱、电容-电压测试等方法对外延电学参数进行了测试和分析。对平板式外延炉的流场、热场与硅外延层厚度、电阻率均匀性的关系进行了研究。在此基础上采用周期变化的气流在外延层生长前反复吹扫腔体,进一步降低了非主动掺杂的不良影响,结合优化的流场和热场条件,最终制备出表面质量优、均匀性好的外延层,满足了厚度和电阻率不均匀性都小于1.0%的目标需求。采用该外延材料制备的肖特基二极管的正向导通电压降低了17.1%,显著减小了功耗,具备了良好的应用前景。 相似文献
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本文论述在常压CVD硅外延系统中,通过e_qP=B-A/T,分别计算出SiH-Cl_3、PCl_3和BCl_3的A和B二常数值。采用低温深冷工艺,进一步提高硅源的纯度,通过控制SiHCl_3的蒸汽压,在晶向为(111)和(100),掺硼电阻率(4~8)×10 ̄(-3)Ω·cm的抛光衬底硅片上,生长出外延层电阻率为350Ω·cm(杂质浓度3.5×10 ̄(13)/cm ̄3),外延层厚度达120μm的p/p ̄+/硅外延片,制成器件的击穿电压可达1000V。 相似文献
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《固体电子学研究与进展》2017,(5)
利用PE3061D型平板式外延炉,在150mm的重掺As的硅单晶衬底上采用化学气相沉积(CVD)方法制备参数可控且高均匀性的外延层,通过聚光灯、原子力显微镜(AFM)、傅里叶变换红外光谱仪(FT-IR)、汞探针电容-电压测试仪(Hg CV)等测试设备分别研究了外延层的表面形貌、微粗糙度、厚度、电阻率以及均匀性参数。采用了基座浅层包硅技术、周期性滞留层杂质稀释技术、高温快速二次本征生长技术、温场流场调控技术等新型工艺技术,使外延层厚度满足(15±2%)μm,电阻率满足(15±2%)Ω·cm的设计要求,片内厚度和电阻率不均匀性达到<2%的水平。制备的硅外延材料应用于FRED的试产,击穿电压高于125V,晶圆的成品率达到90%以上,满足了120VFRED器件使用要求,实现了自主可控。 相似文献
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探讨了多层硅外延中的自掺杂现象,研究了自掺杂的产生机理,分析了工艺条件对自掺杂的影响,提出了减小自掺杂的几种方法。 相似文献
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随着摩尔定律的逐步实现,大直径硅片的应用规模逐渐扩大,然而,大直径硅外延片的片内均匀性成为了外延的主要问题之一.使用具有五路进气结构的单片外延炉生长300 mm直径硅外延片.相对于传统的三路进气结构,五路进气可以分别对硅片表面的5个区域的气流进行调节,实现单独分区调控,从而提升了外延层厚度均匀性的可调性.实验中,采用两步外延方法,进一步提升了片内电阻率均匀性.通过对工艺参数进行优化,300 mm硅外延片的外延层厚度不均匀性达到0.8%,电阻率不均匀性为1.62%(边缘排除5 mm),成功提升了300 mm直径硅外延片的外延层厚度和电阻率均匀性控制水平. 相似文献
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《Electron Devices, IEEE Transactions on》1974,21(2):165-171
A series of p-type IMPATT diodes (p+pn+) have been fabricated from epitaxially grown silicon for operation as oscillators at Ka -band frequencies. A maximum CW output power level of 700 mW at 29.6 GHz, a maximum conversion efficiency of 10.9 percent, and a minimum FM noise parameter, M, of 25 dB have been measured on this series of p-type diodes. A diode oscillating in a variable height radial disk cavity was frequency tuned from 27.5 to 40 GHz, covering the entire Ka -band, with a 1.4 dB power variation over the tuning range. The minimum CW output power of this tunable oscillator was 360 mW at 6.5 percent efficiency. 相似文献
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Carrier lifetimes in silicon epitaxial layers deposited on high-dose oxygen-implanted wafers have been obtained from measurements of diode storage times. A figure of 1.25 ?S was obtained for diodes in the implanted area, compared with 1.75 ?S for diodes outside the implanted area on the same wafer. This marginal degradation of lifetime indicates that the dielectrically isolated structure should be able to support bipolar and dynamic logic devices. 相似文献
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D. V. Shengurov V. Yu. Chalkov S. A. Denisov V. G. Shengurov M. V. Stepikhova M. N. Drozdov Z. F. Krasilnik 《Semiconductors》2013,47(3):433-436
The fabrication technology and properties of light-emitting Si structures codoped with erbium and oxygen are reported. The layers are deposited onto (100) Si by molecular beam epitaxy (MBE) using an Er-doped silicon sublimation source. The partial pressure of the oxygen-containing gases in the growth chamber of the MBE facility before layer growth is lower than 5 × 10?10 Torr. The oxygen and erbium concentrations in the Si layers grown at 450°C is ~1 × 1019 and 1018 cm?3, respectively. The silicon epitaxial layers codoped with erbium and oxygen have high crystal quality and yield effective photoluminescence and electroluminescence signals with the dominant optically active Er-1 center forming upon postgrowth annealing at a temperature of 800°C. 相似文献
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Concentration profiles of Ho were investigated after annealing at a temperature of 620°C of silicon layers implanted with 1-MeV Ho+ ions to doses of 1?3×1014 cm?2 exceeding the amorphization threshold, as well as with O+ ions with energies that ensure the coincidence of the concentration maxima of implanted impurities and doses that are greater by an order of magnitude than those of Ho+. The crystallization of the amorphized silicon layer occurs by the mechanism of solid-phase epitaxy. The main features of the segregation redistribution of Ho are shown to be similar to the previously studied segregation behavior of Er. An increase in the Ho concentration at the initial stage of the solid-phase epitaxial crystallization is explained by the small rate of mass transfer through the amorphous layer-single crystal interface. An analytical expression was obtained to describe the variation of the segregation coefficient in the process of solid-phase epitaxial crystallization, including its initial stage, which allows the calculation concentration profiles of rare-earth elements. 相似文献
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Kinetic processes of annihilation (healing) of a micropipe threading into a growing layer from a substrate-seed are considered
in terms of the vacancy model of heteropolytype epitaxy of silicon carbide we previously suggested (Fiz. Tekh. Poluprovodn., 39, 296 (2005); 41, 641 (2007)). A relationship is found between the growth rate of an epitaxial film, vacancy lifetime, and defect layer width
at which the micropipe is healed. Both kinds of vacancies, of carbon and silicon type, are taken into account. In addition,
a simplified linear model of the process of micropipe healing is suggested. The relationship between the micropipe diameter
r
0 and the defect layer width l* is determined in terms of this model: l* = r
0(G/g), where G is the layer growth rate and g is the vacancy velocity, which yields l* ≈ 6r
0 for actual growth conditions. 相似文献
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We report on a thickness-extensional-mode piezoelectric resonator consisting of a ZnO/SiO2 diaphragm supported by a silicon wafer. It is found that the temperature coefficient of frequency can be reduced to zero by adjusting the ZnO/SiO2 thickness ratio. A temperature coefficient of frequency as low as 10 ppm/°C was experimentally obtained. 相似文献
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Infrared reflectance (IR) of GaN grown on sapphire and silicon substrates has been studied both theoretically and experimentally. The theoretical calculation of the IR spectra is based on the transfer matrix method. The IR spectral characteristics influenced by several factors, such as film thickness, incident angle, free carriers, are systematically examined. Combined with experimental results, surface scattering and interface layer effects are also studied. For GaN epilayers grown on sapphire, carrier concentrations and mobility are determined by fitting to the IR reststrahlen band and compared with the Hall measurement. The interface effect is demonstrated to cause a damping behaviour of the interference fringes away from the reststrahlen band. For GaN grown on Si, the IR spectra predicted the large surface roughness of the epilayers. A variation of IR reststrahlen band is correlated to the microstructures of the films, i.e. their polycrystalline nature of the GaN films grown on Si. A three-component effective medium model is proposed to calculate the IR spectra for polycrystalline GaN, and a qualitative correlation between the IR spectra and structure of the film is established. All results show that IR, as a non-destructive method, is efficient for characterising GaN epilayers in semiconductor processing. 相似文献
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《Electron Devices, IEEE Transactions on》1986,33(11):1738-1744
The application of selective silicon epitaxial growth for device isolation is described. An improved selective epitaxial isolation technology is presented in the fabrication of CMOS LSI. This advanced process technology results from a superior selectivity for selective silicon deposition. A CMOS ring oscillator with a twin-well structure is fabricated by using this selective epitaxial isolation technology. The feasibility of using an oversized contact, due to the nature of its steeper oxide-to-silicon isolation boundary, is demonstrated. 相似文献
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本文研究了在Si(111)衬底上生长GaN外延层的方法。相比于直接在AlN缓冲层上生长GaN外延层,引入GaN过渡层显著地提高了外延层的晶体质量并降低了外延层的裂纹密度。使用X射线双晶衍射仪、光学显微镜以及在位监测曲线分析了GaN过渡层对外延层的晶体质量以及裂纹密度的影响。实验发现,直接在AlN缓冲层上生长外延层,晶体质量较差, X射线(0002)面半高宽最优值为0.686°,引入GaN过渡层后,通过调整生长条件,控制岛的长大与合并的过程,从而控制三维生长到二维生长过渡的过程,外延层的晶体质量明显提高, (0002)面半高宽降低为0.206°,并且裂纹明显减少。研究结果证明,通过生长合适厚度的GaN过渡层,可以得到高质量、无裂纹的GaN外延层。 相似文献