1．3微米掺Pr~（3＋）光纤放大器的增益计算和设计考虑

本文描述１．３微米掺镨光纤放大器（ＰＤＦＡ）增益计算的理论模型。在考虑激发态吸收（ＥＳＡ）和放大的自发辐射（ＡＳＥ）频谱特性的情况下，计算得出数值孔径为０．１９的掺镨光纤，泵浦效率为０．０２５ｄＢ／ｍＷ，有效光纤长度为２０ｍ，并给出了掺杂浓度与信号增益的关系。以及镨离子的最佳掺杂半径。     

钡蒸气中放大自发辐射与参量四波混频的竞争

研究了在双光子共振条件下，Ｂａ蒸气中放大自发辐射（ＡＳＥ）与参量四波混频（ＰＦＷＭ）的竞争过程，其机制可归结为ＡＳＥ与ＰＦＷＭ之间的干涉相消。     

掺铒光纤放大器噪声特性的全面分析

本文对掺铒光纤放大器（ＥＤＦＡ）的噪声特性进行了全面的分析。把光信号和ＥＤＦＡ中放大自发辐射（ＡＳＥ）产生的量子噪声，以及信号－ＡＳＥ拍频噪声和ＡＳＥ－ＡＳＥ拍频噪声一并加以考虑。通过数值模拟，给出了不同信号功率和泵浦功率下的ＥＤＦＡ噪声系数。这些结果对优化ＥＤＦＡ的工作参量及其工程制作具有一定的指导作用。     

电信英语及其缩略语解释（七）

ＡＳＥ Ａｐｐｌｉｃａｔｉｏｎ Ｓｅｒｖｉｃｅ Ｅｌｅｍｅｎｔ 应用服务单元 ＡＳＥ Ａｍｐｌｉｆｉｅｄ Ｓｐｏｎｔａｎｅｏｕｓ Ｅｍｉｓｓｉｏｎ 放大自发辐射ＡＳＩＣ Ａｐｐｌｉｃａｔｉｏｎ Ｓｐｅｃｉｆｉｃ Ｉｎｔｅｇｒａｔｅｄ Ｃｉｒｃｕｉｔ 专用集成电路ＡＳＦ Ａｄｖａｎｃｅｄ Ｓｔｒｅａｍｉｎｇ Ｆｏｒｍａｔ 高级流式文件格式 ＡＳＦ是一种用于流式多媒体文件（包括文本、图形、声音、视频和动画等）的开放文件格式规范。ＡＳＫ Ａｍｐｌｉｔｕｄｅ Ｓｈｉｆｔ Ｋｅｙｉｎｇ 振幅键控ＡＳＮ．１ Ａｂｓｔｒａｃｔ Ｓｙ…     

Er,O离子共注入GaAs的二次离子质谱的研究

在Ⅲ－Ⅴ族半导体ＧａＡｓ外延层上共注入Ｅｒ和Ｏ离子（ＧａＡｓ：Ｅｒ，Ｏ）．经面对面优化退火后，光致发光（ｐｈｏｔｏｌｕｍｉｎｅｓｃｅｎｃｅ－ＰＬ）谱中观测到对应Ｅｒ３＋第一激发态到基态４Ｉ１３／２－４Ｉ１５／２跃迁，其相对强度较单注入Ｅｒ的ＧａＡｓ（ＧａＡｓ：Ｅｒ）增强１０倍，且谱线变窄．从二次离子质谱（ＳｅｃｏｎｄａｒｙＩｏｎＭａｓＳｐｅｃｔｒｏｍｅｔｒｙ－ＳＩＭＳ）和卢瑟福背散射实验给出退火前后Ｅｒ在ＧａＡｓ：Ｅｒ样品中的剖面分布．ＳＩＭＳ测量分别给出Ｏ注入前后Ｅｒ和Ｏ在ＧａＡｓ：Ｅｒ，Ｏ中的深度剖面分布，分析表明Ｅｒ和Ｏ共注入后形成光学激活有效的发光中心．     

应用于星间光通信系统的光发送机的设计

根据自由空间光通信的特点,在理论分析和数值仿真的基础上提出了适用于星间光通信的长滤长光发送机方案,针对星间光通信对误码率的要求分析了大信号、高泵浦功率条件下ＥＤＦＡ中放大的自发辐射（ＡＳＥ）对系统信噪比增益的影响并通过计算给出了在ＯＯＫ调制方式下光发送机天线口径的最优范围。     

MBE生长InGaAs／GaAs应变层单量子阱激光器结构材料的研究

采用ＶａｒｉａｎＧｅｎⅡＭＢＥ生长系统研究了ＩｎＧａＡｓ／ＧａＡｓ应变层单量子阶（ＳＳＱＷ）激光器结构材料。通过ＭＢＥ生长实验，探索了Ｉｎ＿ｘＧａ＿（１－ｘ）ｔＡｓ／ＧａＡｓＳＳＱＷ激光器发射波长（λ）与Ｉｎ组分（ｘ）和阱宽（Ｌ＿ｚ）的关系，并与理论计算作了比较，两者符合得很好。还研究了材料生长参数对器件性能的影响，主要包括：Ⅴ／Ⅲ束流比，量子阱结构的生长温度Ｔ＿ｇ（ＱＷ），生长速率和掺杂浓度对激光器波长、阈值电流密度、微分量子效率和器件串联电阻的影响。以此为基础，通过优化器件结构和ＭＢＥ生长条件，获得了性能优异的Ｉｎ＿（０．２）Ｇａ＿（０．８）Ａｓ／ＧａＡｓ应变层单量子阱激光器：其次长为９６３ｎｍ，阈值电流密度为１３５Ａ／ｃｍ￣２，微分量子效率为３５．１％。     

基于协同工作方式的一种蚁群布线系统

基于协同学习机制的蚁群算法ＡＣＳ已成功应用于求解ＴＳＰ问题．本文基于蚁群的协同工作机制,提出了一种其内涵扩充了的增强蚁群算法（ＩＡＣＳ）．利用此新算法设计了一个开关盒（Ｓｗｉｔｃｈｂｏｘ）布线程序,并用ＪＡＶＡ语言加以实现．针对几个算例计算的结果,证明该程序可获得比ＷＥＡＶＥＲ、ＭＩＧＨＴＹ、ＢＥＡＶＥＲ、ＧＡＰ基准例低的计算复杂度．     

大信号设计GaAs MESFET功率合成

利用ＧａＡｓＭＥＳＦＥＴ功率特性的线性化模型，求出ＧａＡｓＭＥＳＦＥＴ近似最佳功率负载阻抗，为利用谐波平衡法计算提供初值。然后，使用自行研制的谐波平衡分析软件包，进行ＧａＡｓＭＥＳＦＥＴ大信号模型参数的提取和非线性电路模拟计算。将两只总栅宽为９．６ｍｍ的ＧａＡｓＭＥＳＦＥＴ管芯，利用内匹配功率合成技术，在Ｃ波段（５．５～５．８ＧＨＺ）制成１ｄＢ压缩功率大于８Ｗ，典型功率增益９ｄＢ的ＧａＡｓＭＥＳＦＥＴ内匹配功率管。     

Si(5,5,12)——一个大元胞的稳定表面

利用常规的ＬＥＥＤ和高分辨率的ＳＰＡ－ＬＥＥＤ技术研究了标称（３３７）的Ｓｉ表面原子结构．经过反复的离子轰击（７００ｅＶＡｒ＋）和１３００Ｋ退火之后的这种表面形成稳定的（５，５，１２）晶面，即结构周期为（３３７）＋（２２５）＋（３３７）的有序的原子排列．这一事实说明：Ｓｉ（５，５，１２）是比Ｓｉ（３３７）更为稳定的晶面．ＬＥＥＤ和ＳＰＡ－ＬＥＥＤ图像证实，稳定的Ｓｉ（５，５，１２）表面为（２×１）原子再构，即沿［１１０］方向的周期是体内结构周期的两倍，而沿［６６５］方向的周期与体内结构周期相同．     

多级染料激光放大器中激光增益与放大自发辐射强度的理论研究

利用激光增益和放大自发辐射 (ASE)理论 ,对不同条件下的染料激光放大器的激光增益和ASE强度进行了数值计算。分析了当入射光强远小于和大于有效饱和光强时 ,激光增益和ASE强度与入射光相对强度的关系 ,讨论了在两种条件下ASE系数以及染料池端面反射系数对激光增益和ASE成分的影响。最后利用这些结果 ,对连续激光的多级染料放大系统的优化设计进行了讨论。     

Power scaling in quantum-well laser amplifiers

The effects of increasing excitation on the performance of quantum-well semiconductor laser amplifiers were investigated. Amplified spontaneous emission (ASE) and gain roll over at high injected carrier densities are two limitations to the power scaling of these devices. A Rigrod analysis was used to study the effects of these limitations on the gain, ratio of signal to ASE power, and efficiency for different values of injection current, facet reflectivity, and input laser intensity. Comparisons are made with an equivalent amplifier operating with a bulk semiconductor gain medium. This analysis suggests that quantum-well semiconductor amplifier performance improves with a double-pass configuration     

不同泵浦方式下Er3 /Yb3 共掺光纤放大器的自发辐射谱

用改进的MCVD法和湿法掺杂技术设计制作了2种不同Er^3＋、Yb^3＋浓度比的Er^3＋／Yb^3＋共掺光纤（EYDF），利用980nm和1480nm泵浦LD对Er^3＋／Yb^3＋共掺光纤放大器（EYDFA）的放大自发辐射（ASE）谱进行了研究。利用980nm LD泵浦时，这2种光纤在C波段的ASE强度都很弱，吸收系数小的EYDF在C波段的荧光强度比吸收系数大的光纤大2个量级。用1480nmLD对吸收系数大的EYDF进行泵浦，优化光纤长度，此时C波段荧光强度比用980nm泵浦时大5个量级。这是由于对于EYDF在976nm附近Yb^3＋有很强的非饱和吸收，导致能量传输效率差，因此980nmLD不适合做高浓度EYDFA的泵浦源。而1480nm泵浦时，Yb^3＋不再作为敏化剂而只起到克服成对Er^3＋间的浓度淬灭问题，同时起到提高Er^3＋在石英基光纤中的溶解度的作用。     

Amplified spontaneous emission effects in semiconductor laseramplifiers

The analysis presented provides a quantitative method for predicting semiconductor laser amplifier performance in the presence of ASE (amplified spontaneous emission). It indicates that in order to increase the fraction of pump power that contributes to the amplification of the input laser field relative to that spent in overcoming internal losses, an amplifier should operate at as high an excitation level as possible. This may mean operating an amplifier above its free-running oscillation threshold. A limitation to the maximum pump power is the increase in ASE. With too high an excitation, ASE dominates over the amplified input laser field, resulting in a quenching of the amplifier gain, efficiency and coherence. ASE effects may be mitigated by increasing the input laser intensity, decreasing the amplifier facet reflectivities, or, in some cases, tuning the master oscillator so that it is resonant with the amplifier. The analysis indicates that minimizing the facet reflectivity is the most effective way to circumvent ASE limitations to power scaling semiconductor laser amplifiers     

Characterization of an ASE reflector-based gain-clamped erbium-doped fiber amplifier

We develop a simulation tool for an all-optical gain-clamped erbium-doped fiber amplifier (GC-EDFA) based on an amplified spontaneous emission (ASE) reflector and thoroughly verify its validity by comparing simulation data with experimental ones. We carry out simulation work as changing conditions like reflection ratio and bandwidth of the ASE reflector, EDF length, and pump power. From this work, we have an exact understanding about the gain clamping principle that a reflected ASE acts like an intensity reservoir against input signal intensity variation. In general, as a reflected ASE power becomes higher, both a dynamic range and a noise figure (NF) increase; on the other hand, a clamped gain value decreases. The ASE reflector-based gain clamping scheme can be used for EDFAs with low NF characteristics at small input signal range in case a reflected ASE power is set at a level much lower than powers required for normal gain clamping function.     

Amplified spontaneous emission in pulse-pumped Raman amplifiers

We discuss amplified spontaneous emission (ASE) generated in Raman amplifiers that are counter-pumped with trains of pulses. Our experimental and theoretical results show that if the peak power of the pump pulses is too high, the ASE output from the amplifier can be significantly higher than that from a continuous-wave pumped amplifier providing the same gain. This effect places a lower limit on the duty cycle of pump pulses one can use for a given level of Raman gain. Furthermore, we report an additional ASE enhancement if there is insufficient walkoff between the pump pulses and copropagating ASE to average the effects of higher frequency pump intensity noise. As a result, less pump intensity noise can be tolerated when pulse-pumping a fiber having a zero-dispersion wavelength located midway between the pump and signal wavelengths.     

An efficient double-pass Raman amplifier with pump intensity averaging in a light guide

Experimental observations on a double-pass methane Raman amplifier pumped by a KrF laser demonstrate efficient photon extraction (75-85 percent) of multiple pump pulses and high stage gain (10-20) with simultaneous intensity gain or "pulse compression" of about 2. The Stokes beam divergence is about 2.5 times the diffraction limit and is unchanged in the amplifier to within the precision of the experiment. The pump pulses are of poor spatial quality and propagate through the amplifier in a light guide. A simple one-dimensional theoretical model fits the results of the experiment. Analysis using the model permits a projection of the performance of very large final Raman amplifier-compressor stages for fusion laser systems. These systems, with somewhat better controlled pulse shapes than those used in the experiment, can deliver average intensity gains of 2-3 at a net energy conversion efficiency (all losses included) of about two thirds and a stage gain of 30.     

双向四电子束泵浦KrF主放大器能量沉积

用三维电子输运Ｍｏｎｔｅ－Ｃａｒｌｏ（ＭＣ）方法研究了双向四电子束泵浦ＫｒＦ准分子激光器ＭＯＰＡ系统中主放大器（Ｈ１Ｍ）的能量沉积空间分布。计入了Ｈｉｂａｃｈｉ结构和主膜的影响。对０．５ＭｅＶ的电子，泵浦方向能量沉积基本均匀，而在轴向，因为两窗口间的１４ｃｍ“死区”使得能量沉积呈“马鞍形”，峰谷比为２～３。给出了能量沉积的总量及能量沉积效率与电子束能的关系曲线，为Ｍａｒｘ发生器的二极管电压进行优化设计提供了依据。     

单频EYDFA中种子光功率和增益光纤温度对输出线宽的影响

针对单频激光在放大过程中线宽展宽的问题,对1 550 nm单频铒镱共掺光纤放大器（EYDFA）中种子光功率和温度对输出线宽的影响进行了实验研究。实验对比了不同种子光功率、增益光纤温度下,放大后线宽的变化情况。实验结果表明,获得相同输出功率时,提高的种子光功率会增加输出信噪比（SNR）,并降低放大后线宽展宽的程度。当种子光功率确定时,增益光纤温度也会影响输出线宽。在相同泵浦功率下,增益光纤温度上升会提高放大器的效率和增加受激自发辐射（ASE）强度,但会使输出线宽的展宽增加。同时,分析了种子光功率和温度影响EYDFA输出线宽的原因,认为ASE是影响线宽展宽特性的原因之一。     

Modeling Cladding-Pumped Er/Yb Fiber Amplifiers

This paper presents a new computational strategy for efficient and stable modeling of rare-earth-doped fiber amplifiers and illustrates the strategy with results for a cladding-pumped erbium/ytterbium-doped fiber amplifier. The computational strategy allows arbitrary radial dependence for the optical fields and rare-earth densities, arbitrary wavelength resolution for amplified spontaneous emission (ASE) at pump and signal wavelengths, and arbitrary numbers of rate equations with arbitrary dependence on ground- and excited-state number density. Numerical results are presented for cladding-pumped Er/Yb-doped fiber amplifiers that illustrate how to reach the conversion efficiency limited by the quantum defect, how power conversion and the intensity of the ASE depend on operating wavelength, and how secondary loss mechanisms such as distributed loss, upconversion, and pairing/clustering affect the efficiency of the amplifier.