One‐Step Preparation of Highly Durable Superhydrophobic Carbon Nanothorn Arrays

This study proposes a one‐step method for growing superhydrophobic carbon nanothorn arrays (NTAs) directly on various substrates. The fabricated carbon material (named methyl‐substituted graphdiyne (MGDY)) comprises sp and sp² carbons in a conjugated‐backbone form, as well as methyl groups introduced into the framework as hydrophobic‐enhanced functional groups. MGDY NTAs exhibit excellent hydrophobicity (contact angle ≥152°), substantial long‐period hydrophobic durability (the contact angle decreased by only 3.2% over 800 days), and acid/alkali tolerance. Owing to the enhanced durability and specific stability of carbon, a superhydrophobic interface can easily be constructed using MGDY NTAs, which can be applied to achieve successful long‐term metal‐corrosion protection and efficient oil–water separation.     

以乙二胺为促进剂在碳纤维表面生长定向碳纳米管阵列

采用注射化学气相沉积(Chemical vapor deposition,CVD),以乙二胺(Ethylenediamine,EDA)为促进剂,在未涂覆无机陶瓷涂层的碳纤维表面直接生长了定向碳纳米管(Carbon nanotubers,CNTs)阵列。研究表明:碳纤维表面的定向CNTs沿纤维轴向呈对称分布,生长密度约为5×109 tubes/cm2,长度可达18μm。定向CNTs具有多壁、竹节状结构,平均直径约为37nm。EDA对CNTs的生长形貌影响显著,是CNTs在碳纤维表面定向生长的关键。     

微图形定向碳纳米管场发射阵列冷阴极的研究

本文介绍了一种微图形化碳纳米管场发射阵列冷阴极,每个图形的直径仅为1μm,构成一个发射单元。制作工艺如下：首先在硅（100）基片上沉积氮化钛缓冲层,然后采用曝光工艺获得直径为1μm的胶孔阵列,沉积催化剂铁,最后采用直流等离子体增强化学气相沉积（DC-PECVD）生长直立的碳纳米管。并对17500个发射单元的阵列阴极进行了表面形貌表征及场发射特性测试。结果表明,碳纳米管阵列阴极的一致性较好;最低开启电场为1 V/μm;电场为17 V/μm时,测得的电流密度已达到90 mA/cm^2;发射电流为550μA时,在2.5 h内的波动小于5.6%。     

Template-Growth of Highly Ordered Carbon Nanotube Arrays on Silicon

This paper reports on the success in and the key conditions for direct growth of carbon nanotubes of unprecedented uniformity on silicon. The uniformity is ensured through the growth within the highly ordered nanopores of an alumina oxide template, which is in turn formed on silicon through anodization of aluminum of unprecedented thickness evaporated on silicon. The formation of highly ordered nanopore array by anodization of thick aluminum evaporated on a noncompliant substrate such as silicon is made possible through a specially designed process for evaporating thick aluminum of high quality and good adhesion.     

碳纳米管冷阴极大电流发射机理的研究

本文对碳纳米管冷阴极的场致发射机理进行了理论和实验研究.研究发现,如果场致发射冷阴极的发射面积很小,有可能得到较大的发射电流密度.当发射面积增加时,冷阴极的平均发射电流密度迅速下降,很难得到大的束电流.研究表明,在碳纳米管冷阴极的场致发射现象中,边沿场的场致发射现象起着非常重要作用.如果仅仅增加发射面积,边沿发射电流增加不多,这导致了平均发射电流密度的下降.因此,在阴极结构中增加发射体的边沿,则可有效提高阴极的发射电流.     

定向生长碳纳米管阵列的制备及其应用研究进展

碳纳米管在力、热、光、电等方面都显示出独特的性质，受到众多领域专家的广泛关注，而定向生长的碳纳米管阵列的获得具有更深远的科学意义。详细介绍了国内外定向生长碳纳米管阵列的制备方法，重点阐述了化学气相沉积法（CVD）的制备流程和生长机理以及其工艺参数对生成碳管阵列的影响。简要论述了碳纳米管阵列在几个典型应用领域的研究进展。     

定向生长碳纳米管阵列的制备及其应用研究进展

碳纳米管在力、热、光、电等方面都显示出独特的性质,受到众多领域专家的广泛关注,而定向生长的碳纳米管阵列的获得具有更深远的科学意义.详细介绍了国内外定向生长碳纳米管阵列的制备方法,重点阐述了化学气相沉积法(CVD)的制备流程和生长机理以及其工艺参数对生成碳管阵列的影响.简要论述了碳纳米管阵列在几个典型应用领域的研究进展.     

碳场电子发射体的应用研究

本研究涉及几种自制碳场电子发射体,介绍探索这些碳场电子发射体应用的过程中,在真空电子学、真空微/纳电子学(VMF/VNE)领域内获得成功的方面.研究工作涉及到了一些新开发的真空微电子学与真空电子学器件,如采用耐高温碳场电子发射体(CFE)与平滑型碳场电子发射体(SCFE)的氖发光管,采用平滑型耐高温碳场电子发射体(SCFE)、阵列硅场电子发射体(Si-FEA)的封离式全玻璃平板真空荧光光源管(FP-VFLT),采用寻址式碳纳米管(CNT)薄膜阵列场电子发射体(CNT-FEA)的封离式全玻璃平板摄像管(FCT)与平板显像管(FDT),采用碳纳米管(cNT)薄膜场电子发射体的封离式全玻璃超薄平板字符管(FCT).碳场电子发射体的应用研究工作也涉及到一种商用真空X射线管,及大面积碳纳米管(CNT)薄膜作为微波吸收材料的初步探讨.本文报导了这些研究工作达到的阶段成果.     

石英基底上定向单壁碳纳米管阵列可控生长

以铜为催化剂,甲烷为碳源,采用化学气相沉积法在石英单晶基底上生长定向单壁碳纳米管阵列,分别用扫描电子显微镜、原子力显微镜对其结构进行表征,研究了使用聚合物聚乙烯丙烯酸甲脂（PMMA）分散催化剂对碳纳米管密度和定向性的影响,利用PMMA分散催化剂能提高催化剂的活性,增加定向碳纳米管的密度,使催化剂形成规则的条状,能进一步提高其密度和定向性。采用微加工工艺做成器件,并利用半导体参数测试仪对器件进行了电学测试。     

Electrothermal Characterization of Single-Walled Carbon Nanotube (SWCNT) Interconnect Arrays

Electrothermal characterization of a metallic single-walled carbon nanotube (SWCNT) interconnect array is performed in this paper. The array is biased by a high voltage or under the impact of an electrostatic discharge pulse current. Using both time-dependent and -independent finite-difference methods, 1-D longitudinal heat conduction equation of SWCNT in the array is first solved, with CNT length-dependent temperature distribution, breakdown voltage, power handling capability, as well as transient thermal response captured and compared. Two modified equivalent electrothermal circuit models of a single SWCNT and an SWCNT array are proposed to accurately characterize hybrid effects of the biasing voltage, CNT length, and maximum rise in temperature. Their electrothermal circuit models are further implemented for investigating self-heating impact on signal integrities of SWCNT interconnect arrays, in particular, time-delay-induced crosstalk and noise. It is theoretically demonstrated that self-heating effect should be considered carefully in the design of local SWCNT interconnects when a high biasing signal voltage is applied.      

A Versatile Biomolecular Charge-Based Sensor Using Oxide-Gated Carbon Nanotube Transistor Arrays

Label-free deoxyribonucleic acid (DNA) hybridization detection using carbon nanotube transistor (CNT) arrays is demonstrated. The present scheme is distinguished from other CNT sensing methods as it uses a gate oxide overlayer on top of the carbon nanotubes, which function solely as charge sensors but are not participants in the chemical binding process. Because it involves DNA probe attachment on the gate oxide rather than on the CNT, this approach allows the use of conventional DNA functionalization and bioassay protocols, and is less prone to false positives. The signal sought is a few tens of millivolts in threshold voltage shift due to the increase of surface charges after target hybridization. The hybridization detection is shown to be highly specific and sensitive to a minimum concentration of about 30 nM of 61-mer DNA. Despite differences in the transistor properties due to the spread in the CNT parameters during fabrication, the yields are very high and the sensing characteristics are uniformly consistent in nearly all transistors.