Strategies to Improve Luminescence Efficiency of Metal‐Halide Perovskites and Light‐Emitting Diodes

Metal‐halide perovskites (MHPs) are well suited to be vivid natural color emitters due to their superior optical and electrical properties, such as narrow emission linewidths, easily and widely tunable emission wavelengths, low material cost, and high charge carrier mobility. Since the first development of MHP light‐emitting diodes (PeLEDs) in 2014, many researchers have tried to understand the properties of MHP emitters and the limitations to luminescence efficiency (LE) of PeLEDs, and have devoted efforts to increase the LE of MHP emitters and PeLEDs. Within three and half years, PeLEDs have shown rapidly increased LE from external quantum efficiency ≈0.1% to ≈14.36%. Herein, the factors that limit the LE of PeLEDs are reviewed; the factors are characterized into the following groups: i) photophysical properties of MHP crystals, ii) morphological factors of MHP layers, and iii) problems caused by device architectures. Then, the strategies to overcome those luminescence‐limiting factors in MHP emitters and PeLEDs are critically evaluated. Finally, research directions to further increase the LE of MHP emitters and the potential of MHPs as a core component in next‐generation displays and solid‐state lightings are suggested.     

Color Patterning of Luminescent Perovskites via Light‐Mediated Halide Exchange with Haloalkanes

Lead halide perovskite possesses a semiconductor bandgap that is readily tunable by a variation in its halide composition. Here, a photo‐activated halide exchange process between perovskite nanocrystals and molecular haloalkanes is reported, which enables the perovskite luminescence to be controllably shifted across the entire visible spectrum. Mechanistic investigations reveal a mutual exchange of halogens between the perovskite crystal surface and a chemisorbed haloalkane, yielding nanocrystals and haloalkanes with mixed halide contents. Exchange kinetics studies involving primary, secondary, and tertiary haloalkanes show that the rate of reaction is governed by the activation barrier in the breakage of the covalent carbon–halogen (C? X) bond, which is a function of the C? X bond energy and carbon radical stability. Employing this halide exchange approach, a micrometer‐scale trichromatic patterning of perovskites is demonstrated using a light‐source‐integrated inkjet printer and tertiary haloalkanes as color‐conversion inks. The haloalkanes volatilize after halide exchange and leave no residues, thereby offering significant processing advantage over conventional salt‐based exchange techniques. Beyond the possible applications in new‐generation micro‐LED and electroluminescent quantum dot displays, this work exemplifies the rich surface and photochemistry of perovskite nanocrystals, and could lead to further opportunities in perovskite‐based photocatalysis and photochemical sensing.     

Versatile Defect Passivation Methods for Metal Halide Perovskite Materials and their Application to Light‐Emitting Devices

Metal halide perovskites (MHPs) have emerged as promising emitters because of their excellent optoelectronic properties, including high photoluminescence quantum yields (PLQYs), wide‐range color tunability, and high color purity. However, a fundamental limitation of MHPs is their low exciton binding energy, which results in a low radiative recombination rate and the dependence of PLQY on the excitation intensity. Under the operating conditions of light‐emitting diodes (LEDs), the injected current densities are typically lower than the trap density, leading to a low actual PLQY. Moreover, the defects not only initiate the decomposition of MHPs caused by extrinsic factors, but also intrinsically stimulate ion migration across the interface and lead to the corrosion of electrodes due to interaction between those electrodes, even under inert conditions. The passivation of defects has proven to be effective for mitigating the effects of defects in MHPs. Herein, the origins and theoretical calculations of the defect tolerance in MHPs and the impact of defects on both the performance and stability of perovskite LEDs are reviewed. The passivation methods and materials for MHP bulk films and nanocrystals are discussed in detail. Based on the currently reported advances, specific requirements and future research directions for display applications are suggested.     

From Lead Halide Perovskites to Lead‐Free Metal Halide Perovskites and Perovskite Derivatives

Despite the exciting progress on power conversion efficiencies, the commercialization of the emerging lead (Pb) halide perovskite solar cell technology still faces significant challenges, one of which is the inclusion of toxic Pb. Searching for Pb‐free perovskite solar cell absorbers is currently an attractive research direction. The approaches used for and the consequences of Pb replacement are reviewed herein. Reviews on the theoretical understanding of the electronic, optical, and defect properties of Pb and Pb‐free halide perovskites and perovskite derivatives are provided, as well as the experimental results available in the literature. The theoretical understanding explains well why Pb halide perovskites exhibit superior photovoltaic properties, but Pb‐free perovskites and perovskite derivatives do not.     

High‐Efficiency Solution‐Processed Inorganic Metal Halide Perovskite Light‐Emitting Diodes

This paper reports highly bright and efficient CsPbBr₃ perovskite light‐emitting diodes (PeLEDs) fabricated by simple one‐step spin‐coating of uniform CsPbBr₃ polycrystalline layers on a self‐organized buffer hole injection layer and stoichiometry‐controlled CsPbBr₃ precursor solutions with an optimized concentration. The PeLEDs have maximum current efficiency of 5.39 cd A^?1 and maximum luminance of 13752 cd m^?2. This paper also investigates the origin of current hysteresis, which can be ascribed to migration of Br^? anions. Temperature dependence of the electroluminescence (EL) spectrum is measured and the origins of decreased spectrum area, spectral blue‐shift, and linewidth broadening are analyzed systematically with the activation energies, and are related with Br^? anion migration, thermal dissociation of excitons, thermal expansion, and electron–phonon interaction. This work provides simple ways to improve the efficiency and brightness of all‐inorganic polycrystalline PeLEDs and improves understanding of temperature‐dependent ion migration and EL properties in inorganic PeLEDs.     

Designing Efficient Energy Funneling Kinetics in Ruddlesden–Popper Perovskites for High‐Performance Light‐Emitting Diodes

Mixed Ruddlesden–Popper (RP) perovskites are of great interest in light‐emitting diodes (LEDs), due to the efficient energy transfer (funneling) from high‐bandgap (donor) domains to low‐bandgap (acceptor) domains, which leads to enhanced photoluminescence (PL) intensity, long PL lifetime, and high‐efficiency LEDs. However, the influence of reduced effective emitter centers in the active emissive film, as well as the implications of electrical injection into the larger bandgap donor material, have not been addressed in the context of an active device. The electrical and optical signatures of the energy cascading mechanisms are critically assessed and modulated in a model RP perovskite series ((C₈H₁₇NH₃)₂(CH(NH₂)₂)_m?1Pb_mBr_3m+1). Optimized devices demonstrate a current efficiency of 22.9 cd A^?1 and 5% external quantum efficiency, more than five times higher than systems where funneling is absent. The signature of nonideal funneling in RP perovskites is revealed by the appearance of donor electroluminescence from the device, followed by a reduction in the LED performance     

Mixed Lead–Tin Halide Perovskites for Efficient and Wavelength‐Tunable Near‐Infrared Light‐Emitting Diodes

Near‐infrared (NIR) light‐emitting diodes (LEDs), with emission wavelengths between 800 and 950 nm, are useful for various applications, e.g., night‐vision devices, optical communication, and medical treatments. Yet, devices using thin film materials like organic semiconductors and lead based colloidal quantum dots face certain fundamental challenges that limit the improvement of external quantum efficiency (EQE), making the search of alternative NIR emitters important for the community. In this work, efficient NIR LEDs with tunable emission from 850 to 950 nm, using lead–tin (Pb‐Sn) halide perovskite as emitters are demonstrated. The best performing device exhibits an EQE of 5.0% with a peak emission wavelength of 917 nm, a turn‐on voltage of 1.65 V, and a radiance of 2.7 W Sr^?1 m^?2 when driven at 4.5 V. The emission spectra of mixed Pb‐Sn perovskites are tuned either by changing the Pb:Sn ratio or by incorporating bromide, and notably exhibit no phase separation during device operation. The work demonstrates that mixed Pb‐Sn perovskites are promising next generation NIR emitters.     

Metal‐Halide Perovskites for Gate Dielectrics in Field‐Effect Transistors and Photodetectors Enabled by PMMA Lift‐Off Process

Metal‐halide perovskites have emerged as promising materials for optoelectronics applications, such as photovoltaics, light‐emitting diodes, and photodetectors due to their excellent photoconversion efficiencies. However, their instability in aqueous solutions and most organic solvents has complicated their micropatterning procedures, which are needed for dense device integration, for example, in displays or cameras. In this work, a lift‐off process based on poly(methyl methacrylate) and deep ultraviolet lithography on flexible plastic foils is presented. This technique comprises simultaneous patterning of the metal‐halide perovskite with a top electrode, which results in microscale vertical device architectures with high spatial resolution and alignment properties. Hence, thin‐film transistors (TFTs) with methyl‐ammonium lead iodide (MAPbI₃) gate dielectrics are demonstrated for the first time. The giant dielectric constant of MAPbI₃ (>1000) leads to excellent low‐voltage TFT switching capabilities with subthreshold swings ≈80 mV decade^?1 over ≈5 orders of drain current magnitude. Furthermore, vertically stacked low‐power Au‐MAPbI₃‐Au photodetectors with close‐to‐ideal linear response (R² = 0.9997) are created. The mechanical stability down to a tensile radius of 6 mm is demonstrated for the TFTs and photodetectors, simultaneously realized on the same flexible plastic substrate. These results open the way for flexible low‐power integrated (opto‐)electronic systems based on metal‐halide perovskites.     

Tracking Structural Phase Transitions in Lead‐Halide Perovskites by Means of Thermal Expansion

The extraordinary properties of lead‐halide perovskite materials have spurred intense research, as they have a realistic perspective to play an important role in future photovoltaic devices. It is known that these materials undergo a number of structural phase transitions as a function of temperature that markedly alter their optical and electronic properties. The precise phase transition temperature and exact crystal structure in each phase, however, are controversially discussed in the literature. The linear thermal expansion of single crystals of APbX₃ (A = methylammonium (MA), formamidinium (FA); X = I, Br) below room temperature is measured using a high‐resolution capacitive dilatometer to determine the phase transition temperatures. For δ‐FAPbI₃, two wide regions of negative thermal expansion below 173 and 54 K, and a cascade of sharp transitions for FAPbBr₃ that have not previously been reported are uncovered. Their respective crystal phases are identified via powder X‐ray diffraction. Moreover, it is demonstrated that transport under steady‐state illumination is considerably altered at the structural phase transition in the MA compounds. The results provide advanced insights into the evolution of the crystal structure with decreasing temperature that are essential to interpret the growing interest in investigating the electronic, optical, and photonic properties of lead‐halide perovskite materials.     

A Strategy toward New Low‐Dimensional Hybrid Halide Perovskites with Anionic Spacers

The low‐dimensional halide perovskites have received enormous attention due to their unique photovoltaic and optoelectronic performances. Periodic spacers are used to inhibit the growth of 3D perovskite and fabricate a 2D counterpart with layered structure, mostly based on organic/inorganic cations. Herein, by introducing organic anions (e.g., pentanedioic acid (PDA) and hexanedioic acid (HDA) simultaneously), leaf‐shaped (Cs₃Pb₂Br₅)₂(PDA–HDA) microplates with low‐dimensional structure are synthesized. They also exhibit significant photoluminescence (PL) centered at 540 nm with a narrow emission peak. The synthesis of single crystals of Pb(PDA) and Pb(HDA) allows to further clarify the crystal structure of (Cs₃Pb₂Br₅)₂(PDA–HDA) perovskite and its structural evolution mechanism. Moreover, the cooperative introduction of dicarboxylic acid pairs with appropriate lengths is thermodynamically favored for the low‐dimensional perovskite crystallization. The temperature‐dependent PL indicates a V‐shaped Stokes shift with elevated temperature that could be associated with the localization of excitons in the inorganic layers between organic dicarboxylic acid molecules. This work demonstrates low‐dimensional halide perovskite with anionic spacers, which also opens up a new approach to the growth of low‐dimensional organic–inorganic hybrid perovskite crystals.     

A Highly Emissive Surface Layer in Mixed‐Halide Multication Perovskites

Mixed‐halide lead perovskites have attracted significant attention in the field of photovoltaics and other optoelectronic applications due to their promising bandgap tunability and device performance. Here, the changes in photoluminescence and photoconductance of solution‐processed triple‐cation mixed‐halide (Cs_0.06MA_0.15FA_0.79)Pb(Br_0.4I_0.6)₃ perovskite films (MA: methylammonium, FA: formamidinium) are studied under solar‐equivalent illumination. It is found that the illumination leads to localized surface sites of iodide‐rich perovskite intermixed with passivating PbI₂ material. Time‐ and spectrally resolved photoluminescence measurements reveal that photoexcited charges efficiently transfer to the passivated iodide‐rich perovskite surface layer, leading to high local carrier densities on these sites. The carriers on this surface layer therefore recombine with a high radiative efficiency, with the photoluminescence quantum efficiency of the film under solar excitation densities increasing from 3% to over 45%. At higher excitation densities, nonradiative Auger recombination starts to dominate due to the extremely high concentration of charges on the surface layer. This work reveals new insight into phase segregation of mixed‐halide mixed‐cation perovskites, as well as routes to highly luminescent films by controlling charge density and transfer in novel device structures.     

Understanding the Effect of Crystalline Structural Transformation for Lead-Free Inorganic Halide Perovskites

Lead-free inorganic halide perovskites have triggered appealing interests in various energy-related applications including solar cells and photocatalysis. However, why perovskite-structured materials exhibit excellent photoelectric properties and how the unique crystalline structures affect the charge behaviors are still not well elucidated but essentially desired. Herein, taking inorganic halide perovskite Cs₃Bi₂Br₉ as a prototype, the significant derivation process of silver atoms incorporation to induce the structural transformation from Cs₃Bi₂Br₉ to Cs₂AgBiBr₆, which brings about dramatic differences in photoelectric properties is unraveled. It is demonstrated that the silver incorporation results in the co-operated orbitals hybridization, which makes the electronic distributions in conduction and valence bands of Cs₂AgBiBr₆ more dispersible, eliminating the strong localization of electron–hole pairs. As consequences of the electronic structures derivation, exhilarating changes in photoelectric properties like band structure, exciton binding energy, and charge carrier dynamics are verified experimentally and theoretically. Using photocatalytic hydrogen evolution activity under visible light as a typical evaluation, such crystalline structure transformation contributes to a more than 100-fold enhancement in photocatalytic performances compared with pristine Cs₃Bi₂Br₉, verifying the significant effect of structural derivations on the exhibited performances. The findings will provide evidences for understanding the origin of photoelectric properties for perovskites semiconductors in solar energy conversion.     

Highly Efficient Spectrally Stable Red Perovskite Light‐Emitting Diodes

Perovskite light‐emitting diodes (LEDs) have recently attracted great research interest for their narrow emissions and solution processability. Remarkable progress has been achieved in green perovskite LEDs in recent years, but not blue or red ones. Here, highly efficient and spectrally stable red perovskite LEDs with quasi‐2D perovskite/poly(ethylene oxide) (PEO) composite thin films as the light‐emitting layer are reported. By controlling the molar ratios of organic salt (benzylammonium iodide) to inorganic salts (cesium iodide and lead iodide), luminescent quasi‐2D perovskite thin films are obtained with tunable emission colors from red to deep red. The perovskite/polymer composite approach enables quasi‐2D perovskite/PEO composite thin films to possess much higher photoluminescence quantum efficiencies and smoothness than their neat quasi‐2D perovskite counterparts. Electrically driven LEDs with emissions peaked at 638, 664, 680, and 690 nm have been fabricated to exhibit high brightness and external quantum efficiencies (EQEs). For instance, the perovskite LED with an emission peaked at 680 nm exhibits a brightness of 1392 cd m^?2 and an EQE of 6.23%. Moreover, exceptional electroluminescence spectral stability under continuous device operation has been achieved for these red perovskite LEDs.