Using Self‐Assembling Dipole Molecules to Improve Hole Injection in Conjugated Polymers

Surface modification of indium‐tin‐oxide (ITO)‐coated substrates through the use of self‐assembled monolayers (SAMs) of molecules with permanent dipole moments has been used to control the ITO work function and device performance in polymer light‐emitting diodes based on a polyfluorene hole transporting copolymer. Measured current–voltage characteristics of the devices reveal greatly increased hole injection currents from the SAM‐altered electrodes with higher work function, in agreement with an expected reduction in the barrier for hole injection. In particular, it is shown that the SAM‐modified electrode with the highest work function provides an ohmic contact for hole injection into the studied polymer. Injection from the widely used poly(2,3‐ethylenedioxythiophene)/polystyrenesulphonic acid (PEDOT:PSS)‐coated ITO anode system, is less efficient compared with some of the studied SAM‐coated ITO anodes despite the significantly higher work function measured by a Kelvin probe. This apparently anomalous situation is attributed to the inhomogenities in the injection processes that occur over the area of the device when the PEDOT:PSS‐coated ITO electrode is used.     

Controlling Electron and Hole Charge Injection in Ambipolar Organic Field‐Effect Transistors by Self‐Assembled Monolayers

Controlling contact resistance in organic field‐effect transistors (OFETs) is one of the major hurdles to achieve transistor scaling and dimensional reduction. In particular in the context of ambipolar and/or light‐emitting OFETs it is a difficult challenge to obtain efficient injection of both electrons and holes from one injecting electrode such as gold since organic semiconductors have intrinsically large band gaps resulting in significant injection barrier heights for at least one type of carrier. Here, systematic control of electron and hole contact resistance in poly(9,9‐di‐n‐octylfluorene‐alt‐benzothiadiazole) ambipolar OFETs using thiol‐based self‐assembled monolayers (SAMs) is demonstrated. In contrast to common believe, it is found that for a certain SAM the injection of both electrons and holes can be improved. This simultaneous enhancement of electron and hole injection cannot be explained by SAM‐induced work‐function modifications because the surface dipole induced by the SAM on the metal surface lowers the injection barrier only for one type of carrier, but increases it for the other. These investigations reveal that other key factors also affect contact resistance, including i) interfacial tunneling through the SAM, ii) SAM‐induced modifications of interface morphology, and iii) the interface electronic structure. Of particular importance for top‐gate OFET geometry is iv) the active polymer layer thickness that dominates the electrode/polymer contact resistance. Therefore, a consistent explanation of how SAM electrode modification is able to improve both electron and hole injection in ambipolar OFETs requires considering all mentioned factors.     

Electronic Structure of Self‐Assembled Monolayers on Au(111) Surfaces: The Impact of Backbone Polarizability

Modifying metal electrodes with self‐assembled monolayers (SAMs) has promising applications in organic and molecular electronics. The two key electronic parameters are the modification of the electrode work function because of SAM adsorption and the alignment of the SAM conducting states relative to the metal Fermi level. Through a comprehensive density‐functional‐theory study on a series of organic thiols self‐assembled on Au(111), relationships between the electronic structure of the individual molecules (especially the backbone polarizability and its response to donor/acceptor substitutions) and the properties of the corresponding SAMs are described. The molecular backbone is found to significantly impacts the level alignment; for molecules with small ionization potentials, even Fermi‐level pinning is observed. Nevertheless, independent of the backbone, polar head‐group substitutions have no effect on the level alignment. For the work‐function modification, the larger molecular dipole moments achieved when attaching donor/acceptor substituents to more polarizable backbones are largely compensated by increased depolarization in the SAMs. The main impact of the backbone on the work‐function modification thus arises from its influence on the molecular orientation on the surface. This study provides a solid theoretical basis for the fundamental understanding of SAMs and significantly advances the understanding of structure–property relationships needed for the future development of functional organic interfaces.     

The Effects of Embedded Dipoles in Aromatic Self‐Assembled Monolayers

Using a representative model system, here electronic and structural properties of aromatic self‐assembled monolayers (SAMs) are described that contain an embedded, dipolar group. As polar unit, pyrimidine is used, with its orientation in the molecular backbone and, consequently, the direction of the embedded dipole moment being varied. The electronic and structural properties of these embedded‐dipole SAMs are thoroughly analyzed using a number of complementary characterization techniques combined with quantum‐mechanical modeling. It is shown that such mid‐chain‐substituted monolayers are highly interesting from both fundamental and application viewpoints, as the dipolar groups are found to induce a potential discontinuity inside the monolayer, electrostatically shifting the core‐level energies in the regions above and below the dipoles relative to one another. These SAMs also allow for tuning the substrate work function in a controlled manner independent of the docking chemistry and, most importantly, without modifying the SAM‐ambient interface.     

Intramolecular Dipole Coupling and Depolarization in Self‐Assembled Monolayers

Quantum mechanical and classical atomistic computational methods are used to simulate the chain‐length dependence of depolarization effects in S(CH₂)_n?1CH₃ and S(CH₂)_n?1COOH self‐assembled monolayers on gold (111) surface. These calculations show that due to weak cooperative effects, the electrostatic properties of alkanethiol monolayers are well described by the gas phase dipole moments of the molecules. However, depolarization in monolayers with the molecules carrying head‐ and tail‐group dipoles, such as COOH‐terminated monolayers, strongly depends on the degree of intramolecular dipole coupling. Thus the electrostatic properties of self‐assembled monolayers can be engineered by changing the length of the aliphatic spacer between the polar groups. The transition from strong to weak coupling regime was found to be accompanied by the change in the sign of the asymptotic value of electrostatic potential above the surface of the monolayers and hence in the sign of the metal work function change. Therefore, the use of weakly polarizable spacers between the polar groups inside the molecules forming the SAM is beneficial for accessing a wider range of work‐function changes.     

Highly Efficient,Solution‐Processed,Single‐Layer,Electrophosphorescent Diodes and the Effect of Molecular Dipole Moment

A new family of highly soluble electrophosphorescent dopants based on a series of tris‐cyclometalated iridium(III) complexes (1–4) of 2‐(carbazol‐3‐yl)‐4/5‐R‐pyridine ligands with varying molecular dipole strengths have been synthesized. Highly efficient, solution‐processed, single‐layer, electrophosphorescent diodes utilizing these complexes have been prepared and characterized. The high triplet energy poly(9‐vinylcarbazole) PVK is used as a host polymer doped with 2‐(4‐biphenylyl)‐5‐(4‐tert‐butyl‐phenyl)‐1,3,4‐oxadiazole (PBD) for electron transport. Devices with a current efficiency of 40 cd A^?1 corresponding to an EQE of 12% can thus be achieved. The effect of the type and position of the substituent (electron‐withdrawing group (CF₃) and electron‐donating group (OMe)) on the molecular dipole moment of the complexes has been investigated. A correlation between the absorption strength of the singlet metal‐to‐ligand charge‐transfer (¹MLCT) transition and the luminance spectral red shift as a function of solvent polarity is observed. The strength of the transition dipole moments for complexes 1–4 has also been obtained from TD‐DFT computations, and is found to be consistent with the observed molecular dipole moments of these complexes. The relatively long lifetime of the excitons of the phosphorescence (microseconds) compared to the charge‐carrier scattering time (less than nanoseconds), allows the transition dipole moment to be considered as a “quasi permanent dipole”. Therefore, the carrier mobility is sufficiently affected by the long‐lived transition dipole moments of the phosphorescent molecules, which are randomly oriented in the medium. The dopant dipoles cause positional and energetic disorder because of the locally modified polarization energy. Furthermore, the electron‐withdrawing group CF₃ induces strong carrier dispersion that enhances the electron mobility. Therefore, the strong transition dipole moment in complexes 3 and 4 perturbs both electron and hole mobilities, yielding a reduction in exciton formation and an increase in the device dark current, thereby decreasing the device efficiency.     

Self‐assembled Electroactive Phosphonic Acids on ITO: Maximizing Hole‐Injection in Polymer Light‐Emitting Diodes

In order to fulfill the promise of organic electronic devices, performance‐limiting factors, such as the energetic discontinuity of the material interfaces, must be overcome. Here, improved performance of polymer light‐emitting diodes (PLEDs) is demonstrated using self‐assembled monolayers (SAMs) of triarylamine‐based hole‐transporting molecules with phosphonic acid‐binding groups to modify the surface of the indium tin oxide (ITO) anode. The modified ITO surfaces are used in multilayer PLEDs, in which a green‐emitting polymer, poly[2,7‐(9,9‐dihexylfluorene)‐co‐4,7‐(2,1,3‐benzothiadiazole)] (PFBT5), is sandwiched between a thermally crosslinked hole‐transporting layer (HTL) and an electron‐transporting layer (ETL). All tetraphenyl‐diamine (TPD)‐based SAMs show significantly improved hole‐injection between ITO and the HTL compared to oxygen plasma‐treated ITO and simple aromatic SAMs on ITO. The device performance is consistent with the hole‐transporting properties of triarylamine groups (measured by electrochemical measurements) and improved surface energy matching with the HTL. The turn‐on voltage of the devices using SAM‐modified anodes can be lowered by up to 3 V compared to bare ITO, yielding up to 18‐fold increases in current density and up to 17‐fold increases in brightness at 10 V. Variations in hole‐injection and turn‐on voltage between the different TPD‐based molecules are attributed to the position of alkyl‐spacers within the molecules.     

Systematic Doping Control of CVD Graphene Transistors with Functionalized Aromatic Self‐Assembled Monolayers

Recent reports have shown that self‐assembled monolayers (SAMs) can induce doping effects in graphene transistors. However, a lack of understanding persists surrounding the quantitative relationship between SAM molecular design and its effects on graphene. In order to facilitate the fabrication of next‐generation graphene‐based devices it is important to reliably and predictably control the properties of graphene without negatively impacting its intrinsic high performance. In this study, SAMs with varying dipole magnitudes/directions are utilized and these values are directly correlated to changes in performance seen in graphene transistors. It is found that, by knowing the z‐component of the SAM dipole, one can reliably predict the shift in graphene charge neutrality point after taking into account the influence of the metal electrodes (which also play a role in doping graphene). This relationship is verified through density functional theory and comprehensive device studies utilizing atomic force microscopy, X‐ray photoelectron spectroscopy, Raman spectroscopy, and electrical characterization of graphene transistors. It is shown that properties of graphene transistors can be predictably controlled with SAMs when considering the total doping environment. Additionally, it is found that methylthio‐terminated SAMs strongly interact with graphene allowing for a cleaner graphene transfer and enhanced charge mobility.     

The Swiss‐Army‐Knife Self‐Assembled Monolayer: Improving Electron Injection,Stability, and Wettability of Metal Electrodes with a One‐Minute Process

A novel Self‐assembled Monolayer (SAM) forming molecule bisjulolidyldisulfide (9,9'‐disulfanediylbis(2,3,6,7‐tetrahydro‐1H,5H‐pyrido[3,2,1‐ij]quinoline)) is demonstrated which lowers the work function of metal surfaces by ≈1.2 eV and can be deposited in a 1 min process. Bisjulolidyldisulfide exists in a stable disulfide configuration prior to surface exposure and can therefore be stored, handled, and processed in ambient conditions. SAM from bisjulolidyldisulfide are deposited on metal surfaces (Au and Ag), including inkjet printed Ag on polyethylene terephthalate substrates, investigated by photoelectron and infrared spectroscopy, and used as electrodes in n‐type organic field effect transistor (OFET). Treatment of electrodes in OFET devices with with bisjulolidyldisulfide‐SAMs reduces the contact resistance by two orders of magnitude and improves shelf life with respect to pristine metal electrodes. The presented treatment also increases the surfaces wettability and thereby facilitates solution processing of a subsequent layer. These beneficial properties for device performance, processing, and stability, combined with ease of preparation and handling, render this SAM‐forming molecule an excellent candidate for the high‐throughput production of flexible electronic devices.     

Redox‐Induced Asymmetric Electrical Characteristics of Ferrocene‐Alkanethiolate Molecular Devices on Rigid and Flexible Substrates

The electrical properties of ferrocene‐alkanethiolate self‐assembled monolayers (SAMs) on a high yield solid‐state device structure are investigated. The devices are fabricated using a conductive polymer interlayer between the top electrode and the SAM on both silicon‐based rigid substrates and plastic‐based flexible substrates. Asymmetric electrical transport characteristics that originate from the ferrocene moieties are observed. In particular, a distinctive temperature dependence of the current (i.e., a decrease in current density as temperature increases) at a large reverse bias, which is associated with the redox reaction of ferrocene groups in the molecular junction, is found. It is further demonstrated that the molecular devices can function on flexible substrates under various mechanical stress configurations with consistent electrical characteristics. This study enhances the understanding of asymmetric molecules and may lead to the development of functional molecular electronic devices on both rigid and flexible substrates.     

Tuning Contact Resistance in Top‐Contact p‐Type and n‐Type Organic Field Effect Transistors by Self‐Generated Interlayers

Contact resistance significantly limits the performance of organic field‐effect transistors (OFETs). Positioning interlayers at the metal/organic interface can tune the effective work‐function and reduce contact resistance. Myriad techniques offer interlayer processing onto the metal pads in bottom‐contact OFETs. However, most methods are not suitable for deposition on organic films and incompatible with top‐contact OFET architectures. Here, a simple and versatile methodology is demonstrated for interlayer processing in both p‐ and n‐type devices that is also suitable for top‐contact OFETs. In this approach, judiciously selected interlayer molecules are co‐deposited as additives in the semiconducting polymer active layer. During top contact deposition, the additive molecules migrate from within the bulk film to the organic/metal interface due to additive‐metal interactions. Migration continues until a thin continuous interlayer is completed. Formation of the interlayer is confirmed by X‐ray photoelectron spectroscopy (XPS) and cross‐section scanning transmission electron microscopy (STEM), and its effect on contact resistance by device measurements and transfer line method (TLM) analysis. It is shown that self‐generated interlayers that reduce contact resistance in p‐type devices, increase that of n‐type devices, and vice versa, confirming the role of additives as interlayer materials that modulate the effective work‐function of the organic/metal interface.     

Electrode Work Function Engineering with Phosphonic Acid Monolayers and Molecular Acceptors: Charge Redistribution Mechanisms

The uses of self‐assembled monolayers (SAMs) of dipolar molecules or of adsorbed molecular acceptors on electrode materials are common strategies to increase their work function, thereby facilitating hole injection into an organic semiconductor deposited on top. Here it is shown that a combination of both approaches can surpass the performance of the individual ones. By combined experimental and theoretical methods it is revealed that in a three‐component system, consisting of an indium‐tin‐oxide (ITO) electrode, a carbazole‐based phosphonic acid SAM, and a molecular acceptor layer on top of the SAM, charge transfer occurs from the ITO through the SAM to the acceptor layer, resulting in an electrostatic field drop over the charge‐neutral SAM. This result is in contrast to common expectations of either p‐doping the carbazole of the SAM or charge transfer complex formation between the carbazole and the acceptor molecules. A high work function of 5.7 eV is achieved with this combined system; even higher values may be accessible by exploiting the fundamental charge redistribution mechanisms identified here with other material combinations.     

High‐Performance Piezoelectric,Pyroelectric, and Triboelectric Nanogenerators Based on P(VDF‐TrFE) with Controlled Crystallinity and Dipole Alignment

Poly(vinylidenefluoride‐co‐trifluoroethylene) (P(VDF‐TrFE)), as a ferroelectric polymer, offers great promise for energy harvesting for flexible and wearable applications. Here, this paper shows that the choice of solvent used to dissolve the polymer significantly influences its properties in terms of energy harvesting. Indeed, the P(VDF‐TrFE) prepared using a high dipole moment solvent has higher piezoelectric and pyroelectric coefficients and triboelectric property. Such improvements are the result of higher crystallinity and better dipole alignment of the polymer prepared using a higher dipole moment solvent. Finite element method simulations confirm that the higher dipole moment results in higher piezoelectric, pyroelectric, and triboelectric potential distributions. Furthermore, P(VDF‐TrFE)‐based piezoelectric, pyroelectric, and triboelectric nanogenerators (NGs) experimentally validate that the higher dipole moment solvent significantly enhances the power output performance of the NGs; the improvement is about 24% and 82% in output voltage and current, respectively, for piezoelectric NG; about 40% and 35% in output voltage and current, respectively, for pyroelectric NG; and about 65% and 75% in output voltage and current for triboelectric NG. In brief, the approach of using a high dipole moment solvent is very promising for high output P(VDF‐TrFE)‐based wearable NGs.     

Electroactive Self‐Assembled Monolayers for Enhanced Efficiency and Stability of Electropolymerized Luminescent Films and Devices

In order to further improve the efficiency and stability of luminescent electrochemical polymerization (EP) films and devices, electroactive self‐assembled monolayers (SAMs) of carbazolyl alkanethiol are successfully designed and applied to modify Au electrode and covalently graft the deposited EP films. The analysis of the formation and coverage of the SAMs by atomic force microscopy (AFM), cyclic voltammetry (CV), and the theoretical calculation provide consistent results indicating the SAM molecules are densely packed and standing upright (liquid‐like) on the Au surface. In addition, ultraviolet photoelectron spectroscopy (UPS), CV, UV, AFM, and sonication treatment reveal that the close‐packed electroactive SAMs are effective at enhancing the work function of electrode, increasing the deposition rate of EP precursor as well as elevating the cross‐linking efficiency and the adhesive property of subsequent EP films. This is a simple and very efficient method for improving the performance of EP device, which has potential applications in display devices.     

Water‐Soluble Triazolium Ionic‐Liquid‐Induced Surface Self‐Assembly to Enhance the Stability and Efficiency of Perovskite Solar Cells

Despite being a promising candidate for next‐generation photovoltaics, perovskite solar cells (PSCs) exhibit limited stability that hinders their practical application. In order to improve the humidity stability of PSCs, herein, a series of ionic liquids (ILs) “1‐alkyl‐4‐amino‐1,2,4‐triazolium” (termed as RATZ; R represents alkyl chain, and ATZ represents 4‐amino‐1,2,4‐triazolium) as cations are designed and used as additives in methylammonium lead iodide (MAPbI₃) perovskite precursor solution, obtaining triazolium ILs‐modified PSCs for the first time (termed as MA/RATZ PSCs). As opposed to from traditional methods that seek to improve the stability of PSCs by functionalizing perovskite film with hydrophobic molecules, humidity‐stable perovskite films are prepared by exploiting the self‐assembled monolayer (SAM) formation of water‐soluble triazolium ILs on a hydrophilic perovskite surface. The mechanism is validated by experimental and theoretical calculation. This strategy means that the MA/RATZ devices exhibit good humidity stability, maintaining around 80% initial efficiency for 3500 h under 40 ± 5% relative humidity. Meanwhile, the MA/RATZ PSCs exhibit enhanced thermal stability and photostability. Tuning the molecule structure of the ILs additives achieves a maximum power conversion efficiency (PCE) of 20.03%. This work demonstrates the potential of using triazolium ILs as additives and SAM and molecular design to achieve high performance PSCs.     

Surface‐Transfer Doping of Organic Semiconductors Using Functionalized Self‐Assembled Monolayers

Controlling charge doping in organic semiconductors represents one of the key challenges in organic electronics that needs to be solved in order to optimize charge transport in organic devices. Charge transfer or charge separation at the molecule/substrate interface can be used to dope the semiconductor (substrate) surface or the active molecular layers close to the interface, and this process is referred to as surface‐transfer doping. By modifying the Au(111) substrate with self‐assembled monolayers (SAMs) of aromatic thiols with strong electron‐withdrawing trifluoromethyl (CF₃) functional groups, significant electron transfer from the active organic layers (copper(II) phthalocyanine; CuPc) to the underlying CF₃‐SAM near the interface is clearly observed by synchrotron photoemission spectroscopy. The electron transfer at the CuPc/CF₃‐SAM interface leads to an electron accumulation layer in CF₃‐SAM and a depletion layer in CuPc, thereby achieving p‐type doping of the CuPc layers close to the interface. In contrast, methyl (CH₃)‐terminated SAMs do not display significant electron transfer behavior at the CuPc/CH₃‐SAM interface, suggesting that these effects can be generalized to other organic‐SAM interfaces. Angular‐dependent near‐edge X‐ray absorption fine structure (NEXAFS) measurements reveal that CuPc molecules adopt a standing‐up configuration on both SAMs, suggesting that interface charge transfer has a negligible effect on the molecular orientation of CuPc on various SAMs.     

Using Self‐Assembling Dipole Molecules to Improve Charge Collection in Molecular Solar Cells

Surface modification of indium tin oxide (ITO)‐coated substrates through the use of self‐assembled monolayers (SAMs) of molecules with permanent dipole moments has been used to control the anode work function and device performance in molecular solar cells based on a CuPc:C₆₀ (CuPc: copper phthalocyanine) heterojunction. Use of SAMs increases both the short‐circuit current density (J_sc) and fill factor, increasing the power‐conversion efficiency by up to an order of magnitude. This improvement is attributed primarily to an enhanced interfacial charge transfer rate at the anode, due to both a decrease in the interfacial energy step between the anode work function and the highest occupied molecular orbital (HOMO) level of the organic layer, and a better compatibility of the SAM‐modified electrodes with the initial CuPc layers, which leads to a higher density of active sites for charge transfer. An additional factor may be the influence of increasing electric field at the heterojunction on the exciton‐dissociation efficiency. This is supported by calculations of the electric potential distribution for the structures. Work‐function modification has virtually no effect on the open‐circuit voltage (V_oc), in accordance with the idea that V_oc is controlled primarily by the energy levels of the donor and acceptor materials.     

In‐Situ Switching from Barrier‐Limited to Ohmic Anodes for Efficient Organic Optoelectronics

Injection and extraction of charges through ohmic contacts are required for efficient operation of semiconductor devices. Treatment using polar non‐solvents switches polar anode surfaces, including PEDOT:PSS and ITO, from barrier‐limited hole injection and extraction to ohmic behaviour. This is caused by an in‐situ modification of the anode surface that is buried under a layer of organic semiconductor. The exposure to methanol removes polar hydroxyl groups from the buried anode interface, and permanently increases the work function by 0.2–0.3 eV. In the case of ITO/PEDOT:PSS/PBDTTT‐CT:PC71BM/Al photovoltaic devices, the higher work function promotes charge transfer, leading to p‐doping of the organic semiconductor at the interface. This results in a two‐fold increase in hole extraction rates which raises both the fill factor and the open‐circuit voltage, leading to high power conversion efficiency of 7.4%. In ITO/PEDOT:PSS/F8BT/Al polymer light‐emitting diodes, where the organic semiconductor's HOMO level lies deeper than the anode Fermi level, the increased work function enhances hole injection efficiency and luminance intensity by 3 orders of magnitude. In particular, hole injection rates from PEDOT:PSS anodes are equivalent to those achievable using MoO₃. These findings exemplify the importance of work function control as a tool for improved electrode design, and open new routes to device interfacial optimization using facile solvent processing techniques. Such simple, persistent, treatments pave the way towards low cost manufacturing of efficient organic optoelectronic devices.     

Cyano‐Substituted Oligothiophenes: A New Approach to n‐Type Organic Semiconductors

A series of α,ω‐cyano oligothiophenes with three to six rings, as well as seven β,β′‐substituted cyano terthiophenes have been synthesized using a palladium‐catalyzed coupling reaction via organotin or organozinc intermediates. The structure of an oliothiophene trimer has been determined by X‐ray crystallography; its space group is monoclinic (C2/c) with four molecules per unit cell (Z = 4). The molecules adopt the π–π stacking structure. UV‐vis spectra of these materials as thin films show a bathochromic shift compared to unsubstituted oligothiophenes. These bathochromic shifts are interpreted in the light of charge transfer exciton. Cyano end‐capped sexithiophene (CN‐6T‐CN) sandwiched between various metals (metal/CN‐6T‐CN/metal), to form Schottky diode structures, were fabricated by vapor deposition. The electron injection and rectification ratio strongly depend on the metal contact, namely the work function of the metal is compatible with the electron affinity of the organic material. The current–voltage results are compatible with n‐type conduction in CN‐6T‐CN.