Antibacterial and photocatalytic activity of ZnO nanoparticles from Zn(OH)2 dehydrated by azeotropic distillation,freeze drying,and ethanol washing

In this study, the antibacterial and photocatalytic activities of a series of ZnO nanoparticles (NPs) produced using different dehydration methods on as-prepared zinc hydroxide precipitates (Zn(OH)₂) have been investigated. Oven drying, azeotropic distillation, freeze drying, and ethanol washing methods were compared for their ability to yield non-agglomerated powders after precipitation synthesis. β-Zn(OH)₂ single phase was observed after ethanol washing, oven drying, and freeze drying procedures, while azeotropic distillation transformed β-Zn(OH)₂ into ZnO before calcination. Nanosized powders with high surface areas were produced via sublimation during the freeze drying process, and by replacement of hydroxyl groups on the precipitate surface with butoxy groups during azeotropic distillation. Both the photocatalytic degradation of Rhodamine B and the antibacterial activity against the pathogens Escherichia coli and Staphylococcus aureus were enhanced for dehydration methods that increased the surface area of ZnO NPs, suggesting that both photocatalytic and antibacterial behaviors were governed by similar mechanisms.     

Preparation of zinc tin oxide films by reactive magnetron sputtering of Zn on liquid Sn

Zn is sputter-deposited on melted Sn films by radio-frequency magnetron sputtering in oxidizing plasma. The samples present an absorption cut-off wavelength close to the one of ZnO, and an optical transparency higher than 50% in the visible range. Ex-situ thermal annealing improves visible transparency and produces a slight blue-shift in the optical bandgap. X-ray diffraction patterns show typical spectra due to polycrystalline ZnO with evidence of the presence of crystalline SnO, before annealing, and Zn₂SnO₄, after annealing. Rutherford Backscattering studies reveal the existence of a ZnO layer on top of an O-rich (Zn, Sn)O thin film. After optimal thermal treatment, electrical characterization exhibits carrier concentrations of 10¹⁶-10¹⁷ cm⁻³ and mobilities of 20-80 cm² V⁻¹ s⁻¹ for the resulting (Zn, Sn)O n-type films.     

ZnO thin films prepared by a single step sol-gel process

ZnO thin films were prepared on fused silica from a single spin-coating deposition of a sol-gel prepared with anhydrous zinc acetate [Zn(C₂H₃O₂)₂], monoethanolamine [H₂NC₂H₄OH ] and isopropanol. Crystallization annealing was performed over the range 500 to 650 °C. X-ray analysis showed that thin films were preferentially orientated along the [002] c-axis direction of the crystal. The films had a transparency of greater than 85% in the visible region for sol-gels with a zinc content of up to 0.7 M and exhibited absorption edges at ∼ 378 nm. The optical band-gap energy was evaluated to be 3.298-3.306 eV. Photoluminescence showed a strong emission centered at ca. 380 nm along with a broad yellow-orange emission centered at ca. 610 nm. Single step sol-gel thin film deposition in the film thickness range from 80 nm to 350 nm was demonstrated. The effect of sol-gel zinc concentration, film thickness and crystallization temperature on film microstructure, morphology and optical transparency is detailed. A process window for single spin coating deposition of c-axis oriented ZnO discussed.     

Synthesis of zinc and zinc oxide nanoparticles from zinc electrode using plasma in liquid

Nanoparticles are synthesized efficiently from zinc electrode by microwave plasma in liquid. The nanoparticles synthesized from alcohol resulted in pure zinc particles in the shape of spheres or hexagonal cylinders with a production rate of 3.3 g/h, and energy consumption of 267 J/mg for 1 mg. Whereas the nanoparticles synthesized in pure water are composed of Zn and ZnO. The Zn reacts with water through heat or the passage of time to become ZnO, releasing hydrogen gas. An upper disk placed 1 mm away from the electrode along with the bubbles generated simultaneously with the plasma ignition plays a key role in the synthesis of nanoparticles.     

Control of ZnO thin film surface by ZnS passivation to enhance photoluminescence

To enhance the optical property of zinc oxide (ZnO) thin film, zinc sulfide (ZnS) thin films were formed on the interfaces of ZnO thin film as a passivation and a substrate layer. ZnO and ZnS thin films were deposited by atomic layer deposition (ALD) using diethyl zinc, H₂O, and H₂S as precursors. Investigations by X-ray diffraction and transmission electron microscopy showed that ZnS/ZnO/ZnS multi-layer thin films with clear boundaries were achieved by ALD and that each film layer had its own polycrystalline phase. The intensity of the photoluminescence of the ZnO thin film was enhanced as the thickness of the ZnO thin film increased and as ZnS passivation was applied onto the ZnO thin film interfaces.     

Existing Form of Zinc Oxide and Phase Transformation for Zinc Oxide Encapsulated in Mesoporous Silica

Nanocomposites of ZnO encapsulated in mesoporous silica were prepared by wetness impregnation and calcination.The samples were characterized by X-ray diffraction,transmission electron microscopy,nitrogen adsorptione desorption isotherms,and X-ray photoelectron spectroscopy.The effects of ZnO content and thermal treatment on the existing form of ZnO as well as phase transformation were investigated.ZnO exists stably in the form of non-crystalline phase or cluster when crystallite size is small.With increasing ZnO content,as the size of ZnO reaches a critical size of crystalline phase,the non-crystalline ZnO or cluster transforms structurally to crystalline ZnO with low energy state.Besides,Zn2 SiO4 was obtained by solid-state reaction between ZnO and mesoporous silica.The mesoporous silica acts as not only a reactant but also a diffusion barrier which inhibits the phase transformation from β-Zn2SiO4 to α-Zn2SiO4.The formation temperature of Zn2SiO4 is lower than that of conventional solid-state reaction because of the unique structure of mesoporous silica.     

Synthesis of Flower-like Zinc Oxalate Microspheres in Ether-water Bilayer Refluxing Systems and Their Conversion to Zinc Oxide Microspheres

Flower-like zinc oxalate with a mean diameter of 50 μm was synthesized via the reaction of zinc acetate and dimethyl oxalate in ether-water bilayer refluxing systems at low temperature.Flower-like zinc oxalate microspheres can be further transformed into the similar morphology to zinc oxide by the decomposition of zinc oxalate at 500℃.Scanning electron microscopy(SEM),X-ray diffraction(XRD),thermogravimetric analysisdifferential scanning calorimetric(TG-DSC),energy dispersive X-ray spectrum(EDX) and Fourier transforminfrared spectroscopy(FT-IR) were used to characterize the structure features and chemical compositions of the as-synthesized products.The UV-Vis and photoluminescence spectrum of flower-like zinc oxide microspheres were studied.The experimental results showed that flower-like zinc oxalate microspheres may be self-assembled by the zinc oxalate flakes.The ether-water volume ratio of 4:1 and refluxing temperature of 40℃ were considered to favor the preparation of flower-like zinc oxalate microspheres.     

Properties of nanocrystalline zinc oxide thin films prepared by thermal decomposition of electrodeposited zinc peroxide

Zinc peroxide thin films were electrodeposited from aqueous solution at room temperature using H₂O₂ as the oxidation agent. Nanocrystalline zinc oxide thin films were then obtained from thermal decomposition of zinc peroxide thin films. The grain sizes of ZnO through thermal decomposition of ZnO₂ at 200 °C, 300 °C and 400 °C were estimated from the peak width of ZnO(110) obtained from X-ray diffraction and were 6.3 nm, 9.1 nm and 12.9 nm, respectively. The optical properties of zinc oxide thin films have been studied. The photoluminescence results indicate that ZnO thin films have low Stokes blue shift (about 110 meV) and low oxygen vacancies.     

Transparent p/n diode device from a single zinc nitride sputtering target

Zinc oxide (ZnO) thin films showing bipolar conductivity were fabricated by sputtering of zinc nitride target in plasma containing mixture of Ar-O₂ gasses. Sputtering in pure Ar plasma produced conductive and opaque zinc nitride (ZnN) films while upon introduction of oxygen up to 30% into the plasma highly transparent single phase polycrystalline n-type ZnO films have been grown. ZnN sputtering in Ar plasma containing more than 30% oxygen produced p-type ZnO films. Hall-effect and photoluminescence measurements revealed the presence of zinc vacancies and nitrogen which are acting as acceptor dopants in p-type ZnO. A heterostructure was fabricated in a single deposition run consisting of n-ZnN and p-ZnO which exhibited rectifying behavior with 2-2.5 V turn-on voltage. Improvements on the formed p/n heterostructure as well as the potential of using single sputtering target in fabrication of Zn-based homo- and hetero-junctions are discussed.     

Zinc cadmium oxide thin film transistors fabricated at room temperature

Zinc cadmium oxide (ZnCdO) transparent thin film transistors (TFTs) have been fabricated with a back-gate structure using highly p-type Si (001) substrate. For the active channel, 30 nm, 50 nm, and 100 nm thick ZnCdO thin films were grown by pulsed laser deposition. The ZnCdO thin films were wurtzite hexagonal structure with preferred growth along the (002) direction. All the samples were found to be highly transparent with an average transmission of about 80%~ in the visible range. We have investigated the change of the performance of ZnCdO TFTs as the thickness of the active layer is increased. The carrier concentration of ZnCdO thin films has been confirmed to be increased from 10¹⁶ to 10¹⁹ cm⁻³ as the film thickness increased from 30 to 100 nm. Base on this result, the ZnCdO TFTs show a thickness-dependent performance which is ascribed to the carrier concentration in the active layer. The ZnCdO TFT with 30 nm active layer showed good off-current characteristic of below ~ 10¹¹, threshold voltage of 4.69 V, a subthreshold swing of 4.2 V/decade, mobility of 0.17 cm²/V s, and on-to-off current ratios of 3.37 × 10⁴.     

锌基合金氢脆行为研究进展

文章综述了Zn-Fe、Zn-Ni和Zn-Co等主要锌基合金电沉积过程中氢脆性的研究状况。指出锌合金镀层具有良好的性质,将会得到更广泛的应用。     

Modeling of zinc solubility in stabilized/solidified electric arc furnace dust

Equilibrium models which attempt for the influence of pH on the solubility of metals can improve the dynamic leaching models developed to describe the long-term behavior of waste-derived forms. In addition, such models can be used to predict the concentration of metals in equilibrium leaching tests at a given pH. The aim of this work is to model the equilibrium concentration of Zn from untreated and stabilized/solidified (S/S) electric arc furnace dust (EAFD) using experimental data obtained from a pH-dependence leaching test (acid neutralization capacity, ANC). EAFD is a hazardous waste generated in electric arc furnace steel factories; it contains significant amounts of heavy metals such as Zn, Pb, Cr or Cd. EAFD from a local factory was characterized by X-ray fluorescence (XRF), acid digestion and X-ray diffraction (XRD). Zn and Fe were the main components while the XRD analysis revealed that zincite, zinc ferrite and hematite were the main crystalline phases. Different cement/EAFD formulations ranging from 7 to 20% dry weight of cement were prepared and subjected to the ANC leaching test. An amphoteric behavior of Zn was found from the pH dependence test. To model this behavior, the geochemical model Visual MINTEQ (VMINTEQ) was used. In addition to the geochemical model, an empirical model based on the dissolution of Zn in the acidic zone and the re-dissolution of zinc compounds in the alkaline zone was considered showing a similar prediction than that obtained with VMINTEQ. This empirical model seems to be more appropriate when the metal speciation is unknown, or when if known, the theoretical solid phases included in the database of VMINTEQ do not allow to describe the experimental data.     

Self-compensation in ZnO thin films: An insight from X-ray photoelectron spectroscopy, Raman spectroscopy and time-of-flight secondary ion mass spectroscopy analyses

As-grown ZnO typically exhibits n-type conductivity and the difficulty of synthesizing p-type ZnO for the realization of ZnO-based optoelectronic devices is mainly due to the compensation effect of a large background n-type carrier concentration. The cause of this self-compensation effect has not been conclusively identified although oxygen vacancies, zinc interstitials and hydrogen have been suggested. In this work, typical n-type ZnO thin films were prepared by sputtering and investigated using X-ray photoelectron spectroscopy, Raman spectroscopy and time-of-flight secondary ion mass spectroscopy to gain an insight on the possible cause of the self-compensation effect. The analyses found that the native defect that most likely behaved as the donor was zinc interstitial but some contribution of n-type conductivity could also come from the electronegative carbonates or hydrogen carbonates incorporated in the ZnO thin films.     

Carbothermic Reduction of Zinc Oxide Concentrate by Microwave

1.IntroductionExtractive metallurgy of zinc by conventional py-rometallurgical processes involves serious problems suchas low efficiency and environmental pollution.New en-ergy sources(like microwave)with higher efficiency andlower pollution have recently been paid much attention.Microwaves correspond to electromagnetic waves ofwavelength from1mm to1m.Microwave as a sourceof energy has found many industrial applications.Usingmicrowave energy has several advantages such as volu-metric,local an…     

The effect of zinc deficiency on salt taste acuity,preference, and dietary sodium intake in hemodialysis patients

Introduction High sodium intake is the main cause of fluid overload in hemodialysis (HD) patients, leading to increased cardiovascular mortality. High sodium intake is known to be associated with low salt taste acuity and/or high preference. As the zinc status could influence taste acuity, we analyzed the effect of zinc deficiency on salt taste acuity, preference, and dietary sodium intake in HD patients. Methods A total of 77 HD patients was enrolled in this cross‐sectional study. Zinc deficiency was defined as serum zinc level with below 70 µg/mL. The patients were divided into two groups based on serum zinc level. Salt taste acuity and preference were determined by a sensory test using varying concentrations of NaCl solution, and dietary sodium intake was estimated using 3‐day dietary recall surveys. Findings The mean salt recognition threshold and salt taste preference were significantly higher in the zinc deficient group than in the non‐zinc deficient group. And there was significant positive correlation between salt taste preference and dietary sodium intake in zinc deficient group (r = 0.43, P = 0.002). Although, the dietary sodium intake showed a high tendency with no significance (P = 0.052), interdialytic weight gain was significantly higher in the zinc deficient group than in the non‐zinc deficient group (2.68 ± 1.02 kg vs. 3.18 ± 1.02 kg; P = 0.047). Discussion Zinc deficiency may be related to low salt taste acuity and high salt preference, leading to high dietary sodium intake in HD patients.     

Electronic properties of n-ZnO(Al)/p-Si heterojunction prepared by dc magnetron sputtering

The electronic properties of the interface between p-type Si and Al-doped ZnO have been investigated. Films of ZnO(Al) with a thickness of 300 nm were deposited at room temperature by dc magnetron sputtering and subsequently subjected to heat treatment in air in the temperature range 100-400 °C. Current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements were used to characterize the electrical properties of the heterostructure. The I-V measurements show a diode-like behavior with a rectification of ~ 3-4 orders of magnitude. However, annealing above 200 °C gives rise to a pronounced recombination/generation current in the depletion region, which correlates with an increase of the carrier concentration close to the interface and indicates defect formation. Indeed, DLTS reveals the presence of two prominent defect states, one at 0.38 eV above the valence band edge (E_v), and the other, formed during the heat treatment above 250 °C, around E_v + 0.43 eV, which is consistent with the I-V and C-V data.