Synthesis and Characterization of n‐Type Materials for Non‐Doped Organic Red‐Light‐Emitting Diodes

Two compounds, 2,3‐dicyano‐5,6‐di(4′‐diphenylamino‐biphenyl‐4‐yl)pyrazine (CAPP) and 6,7‐dicyano‐2,3‐di(4′‐diphenylamino‐biphenyl‐4‐yl)quinoxaline (CAPQ), capable of intramolecular charge transfer, have been designed and synthesized in high yield by a convenient procedure. The compounds have been fully characterized spectroscopically. They have a high thermal stability and show bright light emission both in non‐polar solvents and in the solid state. Moreover, they exhibit excellent reversible oxidation and reduction waves. The higher energy level of the highest occupied molecular orbital (–5.3 eV) and the triphenylamine group are advantageous for hole‐injection/transport. In addition, the high electron affinities of 3.4 eV and the observed reversible reductive process suggest that these compounds enhance electron injection and have potential for use in electron transport. Three types of non‐doped red‐light‐emitting diodes have been studied using CAPP and CAPQ as the electron‐transporting and host‐light‐emitting layers, respectively. The devices exhibit red electroluminescence (EL), and constant Commission Internationale de l'Eclairage coordinates have been observed on increasing the current density. Pure red EL of CAPP, with a maximum brightness of 536 cd m^–2 and an external quantum efficiency of 0.7 % in ambient air, was achieved.     

High‐Performance Organic Light‐Emitting Diodes Based on Intramolecular Charge‐Transfer Emission from Donor–Acceptor Molecules: Significance of Electron‐ Donor Strength and Molecular Geometry

Organic light‐emitting diodes based on intramolecular‐charge‐transfer emission from two related donor–acceptor (D–A) molecules, 3,7‐[bis(4‐phenyl‐2‐quinolyl)]‐10‐methylphenothiazine (BPQ‐MPT) and 3,6‐[bis(4‐phenyl‐2‐quinolyl)]‐9‐methylcarbazole (BPQ‐MCZ), were found to have electroluminescence (EL) efficiencies and device brightnesses that differ by orders of magnitude. High brightness (> 40 000 cd m^–2) and high efficiency (21.9 cd A^–1, 10.8 lm W^–1, 5.78 % external quantum efficiency (EQE) at 1140 cd m^–2) green EL was achieved from the BPQ‐MPT emitter, which has its highest occupied molecular orbital (HOMO) level at 5.09 eV and a nonplanar geometry. In contrast, diodes with much lower brightness (2290 cd m^–2) and efficiency (1.4 cd A^–1, 0.66 lm W^–1, 1.7 % EQE at 405 cd m^–2) were obtained from the BPQ‐MCZ emitter, which has its HOMO level at 5.75 eV and exhibits a planar geometry. Compared to BPQ‐MCZ, the higher‐lying HOMO level of BPQ‐MPT facilitates more efficient hole injection/transport and a higher charge‐recombination rate, while its nonplanar geometry ensures diode color purity. White EL was observed from BPQ‐MCZ diodes owing to a blue intramolecular charge‐transfer emission and a yellow–orange intermolecular excimer emission, enabled by the planar molecular geometry. These results demonstrate that high‐performance light‐emitting devices can be achieved from intramolecular charge‐transfer emission, while highlighting the critical roles of the electron‐donor strength and the molecular geometry of D–A molecules.     

Organic Solid Solutions: Formation and Applications in Organic Light‐Emitting Diodes

To enhance the performance of organic devices, doping and graded mixed‐layer structures, formed by co‐evaporation methods, have been extensively adopted in the formation of organic thin films. Among the criteria for selecting materials systems, much attention has been paid to the materials' energy‐band structure and carrier‐transport behavior. As a result, some other important characteristics may have been overlooked, such as material compatibility or solubility. In this paper, we propose a new doping method utilizing fused organic solid solutions (FOSSs) which are prepared via high‐pressure and high‐temperature processing. By preparing fused solid solutions of organic compounds, the stable materials systems can be selected for device fabrication. Furthermore, by using these FOSSs, doping concentration and uniformity can be precisely controlled using only one thermal source. As an example of application in organic thin films, high‐performance organic light‐emitting diodes with both single‐color and white‐light emission have been prepared using this new method. Compared to the traditional co‐evaporation method, a FOSS provides us with a more convenient way to optimize the doping system and fabricate relatively complicated organic devices.     

A Light‐Blue Phosphorescent Dendrimer for Efficient Solution‐Processed Light‐Emitting Diodes

We describe the preparation of a dendrimer that is solution‐processible and contains 2‐ethylhexyloxy surface groups, biphenyl‐based dendrons, and a fac‐tris[2‐(2,4‐difluorophenyl)pyridyl]iridium(III ) core. The homoleptic complex is highly luminescent and the color of emission is similar to the heteroleptic iridium(III ) complex, bis[2‐(2,4‐difluorophenyl)pyridyl]picolinate iridium(III ) (FIrpic). To avoid the change in emission color that would arise from attaching a conjugated dendron to the ligand, the conjugation between the dendron and the ligand is decoupled by separating them with an ethane linkage. Bilayer devices containing a light‐emitting layer comprised of a 30 wt.‐% blend of the dendrimer in 1,3‐bis(N‐carbazolyl)benzene (mCP) and a 1,3,5‐tris(2‐N‐phenylbenzimidazolyl)benzene electron‐transport layer have external quantum and power efficiencies, respectively, of 10.4 % and 11 lm W^–1 at 100 cd m^–2 and 6.4 V. These efficiencies are higher than those reported for more complex device structures prepared via evaporation that contain FIrpic blended with mCP as the emitting layer, showing the advantage of using a dendritic structure to control processing and intermolecular interactions. The external quantum efficiency of 10.4 % corresponds to the maximum achievable efficiency based on the photoluminescence quantum yield of the emissive film and the standard out‐coupling of light from the device.     

Chain‐Length Dependence of Singlet and Triplet Exciton Formation Rates in Organic Light‐Emitting Diodes

The operation and efficiencies of molecular or polymer organic light‐emitting diodes depend on the nature of the excited species that are formed. The lowest singlet and triplet excitons display different characteristics that impact on the quantum yields achievable in the devices. Here, by performing correlated quantum‐chemical calculations that account for both the electronic couplings and energetics of the charge‐recombination process from a pair of positive and negative polarons into singlet and triplet excitons, we show that the formation rates for singlet over triplet excitons vary with chain length and favor singlet excitons in longer chains. Thus, in polymer devices, the resulting singlet/triplet fraction can significantly exceed the spin‐statistical limit.     

Doping‐Induced Charge Trapping in Organic Light‐Emitting Devices

By using pyran‐containing donor–acceptor dyes as doping molecules in organic light‐emitting devices (OLEDs), we scrutinize the effects of charge trapping and polarization induced by the guest molecules in the electro‐active host material. Laser dyes 4‐(dicyanomethylene)‐2‐methyl‐6‐[2‐(julolidin‐9‐yl)phenyl]ethenyl]‐4H‐pyran (DCM2) and the novel 4‐(dicyanomethylene)‐2‐methyl‐6‐{2‐[(4‐diphenylamino)phenyl]ethenyl}‐4H‐pyran (DCM‐TPA) are used as model compounds. The emission color of these polar dyes depends strongly on doping concentration, which we have attributed to polarization effects induced by the doping molecules themselves. Their frontier orbital energy levels are situated within the bandgap of the tris(8‐hydroxyquinoline)aluminum (Alq₃) host matrix and allow the investigation of either electron trapping or both electron and hole trapping. In the case of DCM‐TPA doping, we were able to show that electron trapping leads to a partial shift of the recombination zone out of the doped Alq₃ region. To impede charge‐recombination processes taking place in the undoped host matrix, a charge‐blocking layer efficiently confines the recombination zone inside the doped zone and gives rise to increased luminous efficiency. For a doping concentration of 1 wt.‐% we obtain a maximum luminous efficiency of 10.4 cd A^–1. At this doping concentration, the yellow emission spectrum shows excellent color saturation with CIE chromaticity coordinates x, y of 0.49 and 0.50, respectively. In the case of DCM2 the recombination zone is much less affected for the same doping concentrations, which is ascribed to the fact that both electrons and holes are being trapped. The experimental findings are corroborated with a numerical simulation of the doped multilayer devices.     

Enhanced Hole Injection into Amorphous Hole‐Transport Layers of Organic Light‐Emitting Diodes Using Controlled p‐Type Doping

We demonstrate enhanced hole injection and lowered driving voltage in vacuum‐deposited organic light‐emitting diodes (OLEDs) with a hole‐transport layer using the starburst amine 4,4′,4″‐tris(N,N‐diphenyl‐amino)triphenylamine (TDATA) p‐doped with a very strong acceptor, tetrafluoro‐tetracyano‐quinodimethane (F₄‐TCNQ) by controlled coevaporation. The doping leads to high conductivity of doped TDATA layers and a high density of equilibrium charge carriers, which facilitates hole injection and transport. Moreover, multilayer OLEDs consisting of double hole‐transport layers of thick p‐doped TDATA and a thin triphenyl‐diamine (TPD) interlayer exhibit very low operating voltages.     

Light Out‐Coupling Efficiencies of Organic Light‐Emitting Diode Structures and the Effect of Photoluminescence Quantum Yield

Results obtained from modeling the light out‐coupling efficiency of an organic light‐emitting diode (OLED) structure containing the recently developed first‐generation fac‐tris(2‐phenylpyridine) iridium‐cored dendrimer (Ir‐G1) as the emissive organic layer are reported. Comparison of the results obtained for this material with those of corresponding structures based upon small‐molecule and polymer emissive materials is made. The calculations of out‐coupling efficiency performed here take account of many factors, including the photoluminescence quantum yield (PLQY) of the emissive materials. Further, how each material system might perform with regard to out‐coupling efficiency when a range of possible PLQYs are considered is shown. The calculations show that the very high efficiency of dendrimer‐based OLEDs can be attributed primarily to their high PLQY.     

Improving the Brightness and Daylight Contrast of Organic Light‐Emitting Diodes

For most applications of displays based on organic light‐emitting diodes (LEDs), it is desirable to have good daylight contrast in combination with a high intensity of emitted light. The conventional approaches to enhance the daylight contrast, using a black cathode or circular polarizers, result in a significant loss of light emitted by the LED. A rather novel approach to enhance daylight contrast while keeping loss of emitted light to a minimum is the introduction of a chiral‐nematic film in the device. This approach leads to an increase in light efficiency by a factor of 1.8 (with respect to circular polarizers) with some loss in daylight contrast values within the reflection band of the chiral‐nematic film. Outside the reflection band, however, the contrast approaches infinity.     

Organic Light‐Emitting Transistors Containing a Laterally Arranged Heterojunction

An approach to produce organic light‐emitting transistors (OLETs) containing a laterally arranged heterojunction structure, which minimizes exciton quenching at the metal electrodes, is described. This device configuration provides an organic light‐emitting diode (OLED) structure where the anode (source) electrode, hole‐transport material (field‐effect material), light‐emitting material, and cathode (drain) electrode are laterally arranged, thus offering a chance to control the electroluminescent intensity by changing the gate bias. Pentacene and tris(8‐quinolinolato)aluminum (Alq₃) are employed as the field‐effect and light‐emitting materials, respectively. The laterally arranged heterojunction structures are achieved by successively inclined deposition of the field‐effect and light‐emitting materials. After deposition of pentacene, a narrow gap of about 10–20 nm between the drain electrode and pentacene was obtained, thereby creating an opportunity to fabricate a laterally arranged heterojunction. In the OLETs, unsymmetrical source and drain electrodes, that is, Au and LiF/Al ones, are used to ensure efficient injection of holes and electrons. Visible‐light emission from OLETs is observed under ambient atmosphere. This result is ascribed to efficient carrier injection and transport, formation of a heterojunction, as well as good luminescence from the organic emissive layer. The device structure serves as an excellent model system for OLETs and demonstrates a general concept of adjusting the charge‐carrier injection and transport, as well as the electroluminescent properties, by forming laterally arranged heterojunctions.     

Soft‐Contact Optical Lithography Using Transparent Elastomeric Stamps and Application to Nanopatterned Organic Light‐Emitting Devices

Conventional photolithography uses rigid photomasks of fused quartz and high‐purity silica glass plates covered with patterned microstructures of an opaque material. We introduce new, transparent, elastomeric molds (or stamps) of poly(dimethylsiloxane) (PDMS) that can be employed as photomasks to produce the same resist pattern as the pattern of the recessed (or non‐contact) regions of the stamps, in contrast to other reports in the literature^[1] of using PDMS masks to generate edge patterns. The exposure dose of the non‐contact regions with the photoresist through the PDMS is lower than that of the contact regions. Therefore, we employ a difference in the effective exposure dose between the contact and the non‐contact regions through the PDMS stamp to generate the same pattern as the PDMS photomask. The photomasking capability of the PDMS stamps, which is similar to rigid photomasks in conventional photolithography, widens the application boundaries of soft‐contact optical lithography and makes the photolithography process and equipment very simple. This soft‐contact optical lithography process can be widely used to perform photolithography on flexible substrates, avoiding metal or resist cracks, as it uses soft, conformable, intimate contact with the photoresist without any external pressure. To this end, we demonstrate soft‐contact optical lithography on a gold‐coated PDMS substrate and utilized the patterned Au/PDMS substrate with feature sizes into the nanometer regime as a top electrode in organic light‐emitting diodes that are formed by soft‐contact lamination.     

End‐Capping as a Method for Improving Carrier Injection in Electrophosphorescent Light‐Emitting Diodes

The electronic properties, carrier injection, and transport into poly(9,9‐dioctylfluorene) (PFO), PFO end‐capped with hole‐transporting moieties (HTM), PFO–HTM, and PFO end‐capped with electron‐transporting moieties (ETM), PFO–ETM, were investigated. The data demonstrate that charge injection and transport can be tuned by end‐capping with HTM and ETM, without significantly altering the electronic properties of the conjugated backbone. End‐capping with ETM resulted in more closely balanced charge injection and transport. Single‐layer electrophosphorescent light‐emitting diodes (LEDs), fabricated from PFO, PFO–HTM and PFO–ETM as hosts and tris[2,5‐bis‐2′‐(9′,9′‐dihexylfluorene)pyridine‐κ²NC_3′]iridium(III ), Ir(HFP)₃ as the guest, emitted red light with brightnesses of 2040 cd m^–2, 1940 cd m^–2 and 2490 cd m^–2 at 290 mA cm^–2 (16 V) and with luminance efficiencies of 1.4 cd A^–1, 1.4 cd A^–1 and 1.8 cd A^–1 at 4.5 mA cm^–2 for PFO, PFO–HTM, and PFO–ETM, respectively.     

Blue‐Light‐Emitting Oligoquinolines: Synthesis,Properties, and High‐Efficiency Blue‐Light‐Emitting Diodes

The synthesis, photophysics, cyclic voltammetry, and highly efficient blue electroluminescence of a series of four new n‐type conjugated oligomers, 6,6′‐bis(2,4‐diphenylquinoline) (B1PPQ), 6,6′‐bis(2‐(4‐tert‐butylphenyl)‐4‐phenylquinoline) (BtBPQ), 6,6′‐bis(2‐p‐biphenyl)‐4‐phenylquinoline) (B2PPQ), and 6,6′‐bis((3,5‐diphenylbenzene)‐4‐phenylquinoline) (BDBPQ) is reported. The oligoquinolines have high glass‐transition temperatures (T_g ≥ 133 °C), reversible electrochemical reduction, and high electron affinities (2.68–2.81 eV). They emit blue photoluminescence with 0.73–0.94 quantum yields and 1.06–1.42 ns lifetimes in chloroform solutions. High‐performance organic light‐emitting diodes (OLEDs) with excellent blue chromaticity coordinates are achieved from all the oligoquinolines. OLEDs based on B2PPQ as the blue emitter give the best performance with a high brightness (19 740 cd m^–2 at 8.0 V), high efficiency (7.12 cd A^–1 and 6.56 % external quantum efficiency at 1175 cd m^–2), and excellent blue color purity as judged by the Commission Internationale de L'Eclairage (CIE) coordinates (x = 0.15,y = 0.16). These results represent the best efficiency of blue OLEDs from neat fluorescent organic emitters reported to date. These results demonstrate the potential of oligoquinolines as emitters and electron‐transport materials for developing high‐performance blue OLEDs.     

Highly Efficient Non‐Doped Blue‐Light‐Emitting Diodes Based on an Anthrancene Derivative End‐Capped with Tetraphenylethylene Groups

A novel blue‐emitting material, 2‐tert‐butyl‐9,10‐bis[4‐(1,2,2‐triphenylvinyl)phenyl]anthracene ( TPVAn ), which contains an anthracene core and two tetraphenylethylene end‐capped groups, has been synthesized and characterized. Owing to the presence of its sterically congested terminal groups, TPVAn possesses a high glass transition temperature (155 °C) and is morphologically stable. Organic light‐emitting diodes (OLEDs) utilizing TPVAn as the emitter exhibit bright saturated‐blue emissions (Commission Internationale de L'Eclairage (CIE) chromaticity coordinates of x = 0.14 and y = 0.12) with efficiencies as high as 5.3 % (5.3 cd A^–1)—the best performance of non‐doped deep blue‐emitting OLEDs reported to date. In addition, TPVAn doped with an orange fluorophore served as an authentic host for the construction of a white‐light‐emitting device that displayed promising electroluminescent characteristics: the maximum external quantum efficiency reached 4.9 % (13.1 cd A^–1) with CIE coordinates located at (0.33, 0.39).     

Starburst DCM‐Type Red‐Light‐Emitting Materials for Electroluminescence Applications

Three new starburst DCM (4‐(dicyanomethylene)‐2‐methyl‐6‐[4‐(dimethylaminostyryl)‐4H‐pyran]) derivatives, 4,4′,4′′‐tris[2‐(4‐dicyanomethylene‐6‐t‐butyl‐4H‐pyran‐2‐yl)‐ethylene]triphenylamine (TDCM), 4,4′,′′‐tris[2‐(4‐(1′,3′‐indandione)‐6‐t‐butyl‐4H‐pyran‐2‐yl)‐ethylene]triphenylamine (TIN), and 4‐methoxy‐4′,4′′‐bis[2‐(4‐(1′,3′‐indandione)‐6‐t‐butyl‐4H‐pyran‐2‐yl)‐ethylene]triphenylamine (MBIN), have been designed and synthesized for application as red‐light emitters in organic light‐emitting diodes (OLEDs). Differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA) reveal their extremely high glass‐transition temperatures and decomposition temperatures, as well as their low tendency to crystallize. Photoluminescence and electroluminescence measurements show that they exhibit a greatly restricted concentration‐quenching effect compared to DCM1 (4‐(dicyanomethylene)‐2‐methyl‐6‐[p‐(N,N‐dimethylamino)‐styryl]‐4H‐pyran), a simple but typical DCM‐type dye, as a result of their non‐planar, three‐dimensional structures that result from their unique propeller‐like triphenylamine electron‐donating cores. The peripheral electron‐withdrawing moieties also play a key role in the restriction of concentration quenching. That is, TIN and MBIN, bearing 1,3‐indandione acceptors, emit more efficiently than TDCM and DCM1, which have dicyanomethylene as acceptors at a high doping concentration of 10 wt.‐% in poly(9‐vinylcarbazole) (PVK) film, irrespective of whether they are photoexcited or electroexcited, though their fluorescence quantum yields in dilute solutions are much lower than that of DCM1. By way of the co‐doping approach, the electroluminescence device with the configuration indium tin oxide (ITO)/PVK:MBIN(10 wt.‐%):tris(4‐(2‐phenylethynyl)‐phenyl)amine (TPA; 30 wt.‐%) (70 nm)/2,9‐dimethyl‐4,7‐diphenyl‐1,10‐phenanthroline (BCP; 20 nm)/tris(8‐quinolinolato) aluminum (Alq₃;15 nm)/LiF (0.3 nm)/Al (150 nm) exhibits a turn‐on voltage of 5.1 V, a maximum luminance of 6971 cd m^–2, a maximum efficiency of 6.14 cd A^–1 (405 cd m^–2), and chromaticity coordinates of (0.66,0.33). The encouraging electroluminescence performance suggests potential applications of the starburst DCM red‐light emitters in OLEDs.     

A DCM‐Type Red‐Fluorescent Dopant for High‐Performance Organic Electroluminescent Devices

2‐(2‐tert‐Butyl‐6‐((E)‐2‐(2,6,6‐trimethyl‐2,4,5,6‐tetrahydro‐1H‐pyrrolo[3,2,1‐ij]quinolin‐8‐yl)vinyl)‐4H‐pyran‐4‐ylidene)malononitrile (DCQTB) is designed and synthesized in high yield for application as the red‐light‐emitting dopant in organic light‐emitting diodes (OLEDs). Compared with 4‐(dicyanomethylene)‐2‐tert‐butyl‐6‐(1,1,7,7,‐tetramethyljulolidyl‐9‐enyl)‐4H‐pyran (DCJTB), one of the most efficient red‐emitting dopants, DCQTB exhibits red‐shifted fluorescence but blue‐shifted absorption. The unique characteristics of DCQTB with respect to DCJTB are utilized to achieve a red OLED with improved color purity and luminous efficiency. As a result, the device that uses DCQTB as dopant, with the configuration: indium tin oxide (ITO)/N,N′‐bis(1‐naphthyl)‐N,N′‐diphenyl‐1,1′‐biphenyl‐4,4′‐diamine (NPB; 60 nm)/tris(8‐quinolinolato) aluminum (Alq₃):dopant (2.3 wt %) (7 nm)/2,9‐dimethyl‐4,7‐diphenyl‐1,10‐phenanthroline (BCP; 12 nm)/Alq₃(45 nm)/LiF(0.3 nm):Al (300 nm), shows a larger maximum luminance (L_max = 6021 cd m^–2 at 17 V), higher maximum efficiency (η_max = 4.41 cd A^–1 at 11.5 V (235.5 cd m^–2)), and better chromaticity coordinates (Commission Internationale de l'Eclairage, CIE, (x,y) = (0.65,0.35)) than a DCJTB‐based device with the same structure (L_max = 3453 cd m^–2 at 15.5 V, η_max = 3.01 cd A^–1 at 10 V (17.69 cd m^–2), and CIE (x,y) = (0.62,0.38)). The possible reasons for the red‐shifted emission but blue‐shifted absorption of DCQTB relative to DCJTB are also discussed.     

Bright and Efficient,Non‐Doped,Phosphorescent Organic Red‐Light‐Emitting Diodes

Ir^(III) metal complexes with formula [(nazo)₂Ir(Fppz)] ( 1 ), [(nazo)₂Ir(Bppz)] ( 2 ), and [(nazo)₂Ir(Fptz)] ( 3 ) [(nazo)H = 4‐phenyl quinazoline, (Fppz)H = 3‐trifluoromethyl‐5‐(2‐pyridyl) pyrazole, (Bppz)H = 3‐t‐butyl‐5‐(2‐pyridyl) pyrazole, and (Fptz)H = 3‐trifluoromethyl‐5‐(2‐pyridyl) triazole] were synthesized, among which the exact configuration of 1 was confirmed using single‐crystal X‐ray diffraction analysis. These complexes exhibited bright red phosphorescence with relatively short lifetimes of 0.4–1.05 μs in both solution and the solid‐state at room temperature. Non‐doped organic light‐emitting diodes (OLEDs) were fabricated using complexes 1 and 2 in the absence of a host matrix. Saturated red electroluminescence was observed at λ_max = 626 nm (host‐emitter complex 1 ) and 652 nm (host‐emitter complex 2 ), which corresponds to coordinates (0.66,0.34) and (0.69,0.31), respectively, on the 1931 Commission Internationale de l'Eclairage (CIE) chromaticity diagram. The non‐doped devices employing complex 1 showed electroluminance as high as 5780 cd m^–2, an external quantum efficiency of 5.5 % at 8 V, and a current density of 20 mA cm^–2. The short phosphorescence lifetime of 1 in the solid state, coupled with its modest π–π stacking interactions, appear to be the determining factors for its unusual success as a non‐doped host‐emitter.