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1.
    
Ambipolar organic field‐effect transistors (OFETs) are produced, based on organic heterojunctions fabricated by a two‐step vacuum‐deposition process. Copper phthalocyanine (CuPc) deposited at a high temperature (250 °C) acts as the first (p‐type component) layer, and hexadecafluorophthalocyaninatocopper (F16CuPc) deposited at room temperature (25 °C) acts as the second (n‐type component) layer. A heterojunction with an interpenetrating network is obtained as the active layer for the OFETs. These heterojunction devices display significant ambipolar charge transport with symmetric electron and hole mobilities of the order of 10–4 cm2 V–1 s–1 in air. Conductive channels are at the interface between the F16CuPc and CuPc domains in the interpenetrating networks. Electrons are transported in the F16CuPc regions, and holes in the CuPc regions. The molecular arrangement in the heterojunction is well ordered, resulting in a balance of the two carrier densities responsible for the ambipolar electrical characteristics. The thin‐film morphology of the organic heterojunction with its interpenetrating network structure can be controlled well by the vacuum‐deposition process. The structure of interpenetrating networks is similar to that of the bulk heterojunction used in organic photovoltaic cells, therefore, it may be helpful in understanding the process of charge collection in organic photovoltaic cells.  相似文献   

2.
    
Several recent papers have demonstrated that charge‐carrier mobility in organic field‐effect transistors made of vacuum‐evaporated films may become temperature‐independent at low temperature. To account for this behavior, we developed a model based on the polycrystalline nature of these films, where charge transport is mostly limited by grain boundaries. The free‐carrier density in the intergrain regions is controlled by traps, which leads to the formation of back‐to‐back Schottky barriers at each side of the grain boundaries. The height and width of these barriers is estimated from solving Poisson’s equation using the graded‐channel approximation. It is shown that in most cases the barrier width is negligibly small as compared to the physical size of the grain boundaries. In the high‐temperature regime, the conducting channel can be simply described by grains and grain boundaries connected in series, so that the overall resistance reduces to that of the grain boundaries. At low temperatures, tunneling through the barrier becomes predominant, leading to temperature‐independent mobility. A complete two‐dimensional model for charge tunneling through the barriers is developed. A quantitative check of the model is made by least‐squares fitting of the gate voltage‐dependent current measured on an octithiophene transistor at low temperature, which gives a reasonable determination of the trap density and size of the grain boundaries.  相似文献   

3.
    
The temperature dependence of field‐effect transistor (FET) mobility is analyzed for a series of n‐channel, p‐channel, and ambipolar organic semiconductor‐based FETs selected for varied semiconductor structural and device characteristics. The materials (and dominant carrier type) studied are 5,5′′′‐bis(perfluorophenacyl)‐2,2′:5′,2″:5″,2′′′‐quaterthiophene ( 1 , n‐channel), 5,5′′′‐bis(perfluorohexyl carbonyl)‐2,2′:5′,2″:5″,2′′′‐quaterthiophene ( 2 , n‐channel), pentacene ( 3 , p‐channel); 5,5′′′‐bis(hexylcarbonyl)‐2,2′:5′,2″:5″,2′′′‐quaterthiophene ( 4 , ambipolar), 5,5′′′‐bis‐(phenacyl)‐2,2′: 5′,2″:5″,2′′′‐quaterthiophene ( 5 , p‐channel), 2,7‐bis((5‐perfluorophenacyl)thiophen‐2‐yl)‐9,10‐phenanthrenequinone ( 6 , n‐channel), and poly(N‐(2‐octyldodecyl)‐2,2′‐bithiophene‐3,3′‐dicarboximide) ( 7 , n‐channel). Fits of the effective field‐effect mobility (µeff) data assuming a discrete trap energy within a multiple trapping and release (MTR) model reveal low activation energies (EAs) for high‐mobility semiconductors 1 – 3 of 21, 22, and 30 meV, respectively. Higher EA values of 40–70 meV are exhibited by 4 – 7 ‐derived FETs having lower mobilities (µeff). Analysis of these data reveals little correlation between the conduction state energy level and EA, while there is an inverse relationship between EA and µeff. The first variable‐temperature study of an ambipolar organic FET reveals that although n‐channel behavior exhibits EA = 27 meV, the p‐channel regime exhibits significantly more trapping with EA = 250 meV. Interestingly, calculated free carrier mobilities (µ0) are in the range of ～0.2–0.8 cm2 V?1 s?1 in this materials set, largely independent of µeff. This indicates that in the absence of charge traps, the inherent magnitude of carrier mobility is comparable for each of these materials. Finally, the effect of temperature on threshold voltage (VT) reveals two distinct trapping regimes, with the change in trapped charge exhibiting a striking correlation with room temperature µeff. The observation that EA is independent of conduction state energy, and that changes in trapped charge with temperature correlate with room temperature µeff, support the applicability of trap‐limited mobility models such as a MTR mechanism to this materials set.  相似文献   

4.
    
Core‐chlorinated naphthalene tetracarboxylic diimides (NDIs) with fluoroalkyl chains are synthesized and employed for n‐channel organic thin‐film transistors (OTFTs). Structural analyses of the single crystals and thin films are performed and their charge‐transport behavior is investigated in terms of structure–property relationships. NDIs with two chlorine substituents are shown to exhibit a herringbone structure with a very close π‐plane distance (3.3–3.4 Å), a large π‐stack overlap (slipping angle ca. 62°), and high crystal densities (2.046–2.091 g cm?3). These features result in excellent field‐effect mobilities of up to 1.43 cm2 V?1 s?1 with minimal hysteresis and high on–off ratios (ca. 107) in air. This is similar to the highest n‐channel mobilities in air reported so far. Despite the repulsive interactions of bulky Cl substituents, tetrachlorinated NDIs adopt a slip‐stacked face‐to‐face packing with an interplanar distance of around 3.4 Å, resulting in a high mobility (up to 0.44 cm2 V?1 s?1). The air‐stability of dichlorinated NDIs is superior to that of tetrachlorinated NDIs, despite of their higher LUMO levels. This is closely related to the denser packing of the fluorocarbon chains of dichlorinated NDIs, which serves as a kinetic barrier to the diffusion of ambient oxidants. Interestingly, these NDIs show an optimal performance either on bare SiO2 or on octadecyltrimethoxysilane (OTS)‐treated SiO2, depending on the carbon number of the fluoroalkyl chains. Their synthetic simplicity and processing versatility combined with their high performance make these semiconductors highly promising for practical applications in flexible electronics.  相似文献   

5.
    
A new ordered structure of the C60 derivative PCBM ([6‐6]‐phenyl C61‐butyric acid methyl ester) is obtained in thin films based on the blend PCBM:regioregular P3HT (poly(3‐hexylthiophene)). Rapid formation of needlelike crystalline PCBM structures of a few micrometers up to 100 μm in size is demonstrated by submitting the blended thin films to an appropriate thermal treatment. These structures can grow out to a 2D network of PCBM needles and, in specific cases, to spectacular PCBM fans. Key parameters to tune the dimensions and spatial distribution of the PCBM needles are blend ratio and annealing conditions. The as‐obtained blended films and crystals are probed using atomic force microscopy, transmission electron microscopy, selected area electron diffraction, optical microscopy, and confocal fluorescence microscopy. Based on the analytical results, the growth mechanism of the PCBM structures within the film is described in terms of diffusion of PCBM towards the PCBM crystals, leaving highly crystalline P3HT behind in the surrounding matrix.  相似文献   

6.
    
A new ordered structure of the C60 derivative PCBM is obtained in thin films based on the blend PCBM:P3HT, as detailed by Swinnen, Manca, and co‐workers on p. 760. Needlelike crystalline PCBM structures, whose dimensions and spatial distribution ca be tuned by adjusting the blend ratio and annealing conditions, are formed. In typical solar‐cell applications of these blended films, these results indicate that during long‐term operation under normal conditions (50–70 °C) morphology changes and a decrease in cell performance could occur. A new ordered structure of the C60 derivative PCBM ([6‐6]‐phenyl C61‐butyric acid methyl ester) is obtained in thin films based on the blend PCBM:regioregular P3HT (poly(3‐hexylthiophene)). Rapid formation of needlelike crystalline PCBM structures of a few micrometers up to 100 μm in size is demonstrated by submitting the blended thin films to an appropriate thermal treatment. These structures can grow out to a 2D network of PCBM needles and, in specific cases, to spectacular PCBM fans. Key parameters to tune the dimensions and spatial distribution of the PCBM needles are blend ratio and annealing conditions. The as‐obtained blended films and crystals are probed using atomic force microscopy, transmission electron microscopy, selected area electron diffraction, optical microscopy, and confocal fluorescence microscopy. Based on the analytical results, the growth mechanism of the PCBM structures within the film is described in terms of diffusion of PCBM towards the PCBM crystals, leaving highly crystalline P3HT behind in the surrounding matrix.  相似文献   

7.
To obtain higher device performance, the ideal bulk heterojunction (BHJ) morphology should feature both nanophase separation to increase charge generation and bi-continuous percolating networks to increase charge transport. In this paper, solvent additive, 1,8-diiodooctane (DIO), was used in PTB7-Th:PC71BM blend to improve BHJ morphology. The effect of DIO on charge generation and charge transport were studied carefully. Experimental study indicated that the effect of DIO on charge generation and charge transport are conflicted. Positive effects of DIO, which were induced by nanophase separation for charge generation in BHJ, are proved by the results of internal quantum efficiency (IQE) and photocurrent density (Jph), and negative effects of DIO on charge transport has been investigated according to the time-of-flight secondary ion mass spectrometer (TOF-SIMS).  相似文献   

8.
    
New electroactive and photoactive conjugated copolymers consisting of alternating 2,7‐carbazole and oligothiophene moieties linked by vinylene groups have been developed. Different oligothiophene units have been introduced to study the relationship between the polymer structure and the electronic properties. The resulting copolymers are characterized by UV‐vis spectroscopy, size‐exclusion chromatography, and thermal and electrochemical analyses. Bulk heterojunction photovoltaic cells from different copolymers and a soluble fullerene derivative, [6,6]‐phenyl‐C61 butyric acid methyl ester, have been fabricated, and promising preliminary results are obtained. For instance, non‐optimized devices using poly(N‐(4‐octyloxyphenyl)‐2,7‐carbazolenevinylene‐alt‐3″,4″‐dihexyl‐2,2′;5′,2″;5″,2″′;5″′,2″″‐quinquethiophenevinylene 1″,1″‐dioxide) as an absorbing and hole‐carrier semiconductor exhibit power conversion efficiency up to 0.8 % under air mass (AM) 1.5 illumination. These features make 2,7‐carbazolenevinylene‐based and related polymers attractive candidates for solar‐cell applications.  相似文献   

9.
    
We demonstrate that the hole mobility in regioregular poly(3‐hexylthiophene) can be enhanced by a factor of 20 by infiltrating it into straight nanopores of anodic alumina. Optical characterization shows that the polymer chains are partially aligned in the charge‐transport direction.  相似文献   

10.
    
Here, studies on the evolution of photophysics and device performance with annealing of blends of poly(3‐hexylthiophene) with the two polyfluorene copolymers poly((9,9‐dioctylfluorene)‐2,7‐diyl‐alt‐[4,7‐bis(3‐hexylthien‐5‐yl)‐2,1,3‐benzothiadiazole]‐2′,2′′‐diyl) (F8TBT) and poly(9,9‐dioctylfluorene‐co‐benzothiadiazole) (F8BT) are reported. In blends with F8TBT, P3HT is found to reorganize at low annealing temperatures (100 °C or below), evidenced by a redshift of both absorption and photoluminescence (PL), and by a decrease in PL lifetime. Annealing to 140 °C, however, is found to optimize device performance, accompanied by an increase in PL efficiency and lifetime. Grazing‐incidence small‐angle X‐ray scattering is also performed to study the evolution in film nanomorphology with annealing, with the 140 °C‐annealed film showing enhanced phase separation. It is concluded that reorganization of P3HT alone is not sufficient to optimize device performance but must also be accompanied by a coarsening of the morphology to promote charge separation. The shape of the photocurrent action spectra of P3HT:F8TBT devices is also studied, aided by optical modeling of the absorption spectrum of the blend in a device structure. Changes in the shape of the photocurrent action spectra with annealing are observed, and these are attributed to changes in the relative contribution of each polymer to photocurrent as morphology and polymer conformation evolve. In particular, in as‐spun films from xylene, photocurrent is preferentially generated from ordered P3HT segments attributed to the increased charge separation efficiency in ordered P3HT compared to disordered P3HT. For optimized devices, photocurrent is efficiently generated from both P3HT and F8TBT. In contrast to blends with F8TBT, P3HT is only found to reorganize in blends with F8BT at annealing temperatures of over 200 °C. The low efficiency of the P3HT:F8BT system can then be attributed to poor charge generation and separation efficiencies that result from the failure of P3HT to reorganize.  相似文献   

11.
    
Functionalized graphene nanoflakes (GNFs) are used as an electron‐cascade acceptor material in air‐processed organic ternary bulk heterojunction solar cells. The functionalization is realized via the attachment of the ethylenedinitrobenzoyl (EDNB) molecule to the GNFs. Simulation and experimental results show that such nanoscale modification greatly influences the density of states near the Fermi level. Consequently, the GNF‐EDNB blend presents favorable highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels to function as a bridge structure between the poly[N‐9′‐heptadecanyl‐2,7‐carbazole‐alt‐5,5‐(4′,7′‐di‐2‐thienyl‐2′,1′,3′‐benzothiadiazole)] (PCDTBT) and the [6,6]‐phenyl‐C71‐butyric‐acid‐methyl‐ester (PC71BM). The improved exciton dissociation and charge transport are associated with the better energy level alignment of the ternary blend and the high electrical conductivity of the GNFs, which act as additional electron transport channels within the photoactive layer. The resulting PCDTBT/GNF‐EDNB/PC71BM ternary organic solar cells, fabricated entirely under ambient conditions, exhibit an average power conversion efficiency enhancement of ≈18% as compared with the binary blend PCDTBT/PC71BM.  相似文献   

12.
    
Organic field‐effect transistors (OFETs) are attractive for microelectronic applications such as sensor arrays or flexible displays, due to their adequate performance and relatively low production costs. Organic single‐crystal transistors have emerged as benchmark devices for studying the intrinsic charge‐transport properties in organic semiconductor materials. Conventional approaches for growing organic single crystals result in uncontrollable dimensions and the formation of extremely fragile crystals. In addition, the hand‐selection and placement of individual crystals on a device structure represents a severe limitation for producing arrays of single‐crystal transistors with high density and reasonable throughput. As a result, the application of organic single‐crystal transistors has been restricted to fundamental charge transport studies, with their commercial application not yet realizable. We recently reported a materials‐general method of fabricating large‐area arrays of patterned organic single crystals. Microcontact‐printed octadecyltriethoxysilane (OTS) film domains on smooth, inert substrates were found to act as preferential nucleation sites for single crystals for a broad range of organic semiconductor materials, such as pentacene, tetracene, rubrene and C60. In order to understand the underlying mechanism of preferential nucleation, the stamped OTS domains and the contact plane between the OTS domains and the organic crystals were inspected by atomic force microscopy (AFM) and optical microscopy. Our analysis suggests that crystals nucleate at the base of tall OTS pillars that form the significantly rough surface in the stamped domains. The selective nucleation inside the rough surface regions is discussed by means of a rate‐equation model of the growth process.  相似文献   

13.
    
The field of organic electronics has seen tremendous progress over the last years and all‐solution‐based processes are believed to be one of the key routes to ultra low‐cost roll‐to‐roll device and circuit fabrication. In this regard a variety of functional materials has been successfully designed for inkjet printing. While orthogonal‐solvent approaches have frequently been used to tackle the solubility issue in multilayer solution processing, the focus of this work lies on printed metal electrodes for organic field‐effect transistors (OFET) and their curing concepts. Two metallic inkjet‐printable materials are studied: i) a silver‐copper nanoparticle based dispersion and ii) a soluble organic silver‐precursor. Photoelectron spectroscopy reveals largely metallic properties of the cured materials, which are compared with respect to OFET performance and process‐related issues. Contact resistance of the prepared metal electrodes is significantly larger than that of evaporated top‐contact gold electrodes. As direct patterning via inkjet printing limits the reliably achievable channel length to values well above 10 μm, the influence of contact resistance is rather small, however, and overall device performance is comparable.  相似文献   

14.
    
A series of 2,8‐disubstituted dibenzothiophene and 2,8‐disubstituted dibenzothiophene‐S,S‐dioxide derivatives containing quinoxaline and pyrazine moieties are synthesized via three key steps: i) palladium‐catalyzed Sonogashira coupling reaction to form dialkynes; ii) conversion of the dialkynes to diones; and iii) condensation of the diones with diamines. Single‐crystal characterization of 2,8‐di(6,7‐dimethyl‐3‐phenyl‐2‐quinoxalinyl)‐5H‐5λ6‐dibenzo[b,d]thiophene‐5,5‐dione indicates a triclinic crystal structure with space group P1 and a non‐coplanar structure. These new materials are amorphous, with glass‐transition temperatures ranging from 132 to 194 °C. The compounds (Cpd) exhibit high electron mobilities and serve as effective electron‐transport materials for organic light‐emitting devices. Double‐layer devices are fabricated with the structure indium tin oxide (ITO)/Qn/Cpd/LiF/Al, where yellow‐emitting 2,3‐bis[4‐(N‐phenyl‐9‐ethyl‐3‐carbazolylamino)phenyl]quinoxaline (Qn) serves as the emitting layer. An external quantum efficiency of 1.41 %, a power efficiency of 4.94 lm W–1, and a current efficiency of 1.62 cd A–1 are achieved at a current density of 100 mA cm–2.  相似文献   

15.
    
An organic compound with two triphenylamine moieties linked with binaphthyl at the 3,3′‐positions (2,2′‐dimethoxyl‐3,3′‐ di(phenyl‐4‐yl‐diphenyl‐amine)‐[1,1′]‐binaphthyl, TPA–BN–TPA) can be synthesized by Suzuki coupling. Amorphous and homogeneous films are obtained by either vacuum deposition or spin‐coating from solution in good solvents, while single crystals are grown in an appropriate polar solvent. X‐ray crystallography showed that a TPA–BN–TPA crystal is a multichannel structure containing solvent molecules in the channels. The intramolecular charge‐transfer state resulting from amino conjugation effects is observed by solvatochromic experiments. The high glass‐transition temperature (130 °C) and decomposition temperature (439 °C) of this material, in combination with its reversible oxidation property, make it a promising candidate as a hole‐transport material for light‐emitting diodes. With TPA–BN–TPA as the hole‐transporting layer in an indium tin oxide/TPA–BN–TPA/aluminum tris(8‐hydroxyquinoline)/Mg:Ag device, a brightness of about 10 100 cd m–2 at 15.6 V with a maximum efficiency of 3.85 cd A–1 is achieved, which is superior to a device with N,N′‐di(1‐naphthyl)‐N,N′‐diphenyl‐[1,1′‐biphenyl]‐4,4′‐diamine as the hole‐transporting layer under the same conditions. Other devices with TPA–BN–TPA as the blue‐light‐emitting layer or host for a blue dye emitter are also studied.  相似文献   

16.
Experiments have shown that UV treatment has a hardening effect on the surface of a drum-based organic photoconductor (OPC) and improves the retentivity. The dark decay and the photoinduced discharge rates were reduced linearly with the increase of time of UV irradiation. The dark decay rate and photoinduced discharge rates were reduced to 60% and more than 70% of the initial rate, respectively, while there was an increase of the activation energy of the charge transport layer. An initial increase in the residual potential was also observed from 20 to about 70 V. After 40 min of UV irradiation, the residual potential was seen to drop to 50 V again, and at the same time a slight increase of the hardness of the photoreceptor surface was detected from 13 to 16 in Vickers scale (Hv). The phenomena is most likely explained by a photochemical change which reduces the density of charge transport sites, builds up the number of deep traps and changes the molecular distribution. The decrease in charge transport site density and buildup of deep traps reduces the conductivity and hence the dark decay and photoinduced discharge rates. The fragmentation of charge transport molecules may result in a change of activation energy as well as the increase in the residue potential. Moreover, the redistribution of molecules leads to the change in molecular density and hardness.  相似文献   

17.
    
The photoconductive properties of a novel low‐bandgap conjugated polymer, poly[2,6‐(4,4‐bis‐(2‐ethylhexyl)‐4H‐cyclopenta[2,1‐b;3,4‐b′]dithiophene)‐alt‐4,7‐(2,1,3‐benzothiadiazole)], PCPDTBT, with an optical energy gap of Eg ～ 1.5 eV, have been studied. The results of photoluminescence and photoconductivity measurements indicate efficient electron transfer from PCPDTBT to PCBM ([6,6]‐phenyl‐C61 butyric acid methyl ester, a fullerene derivative), where PCPDTBT acts as the electron donor and PCBM as the electron acceptor. Electron‐transfer facilitates charge separation and results in prolonged carrier lifetime, as observed by fast (t > 100 ps) transient photoconductivity measurements. The photoresponsivities of PCPDTBT and PCPDTBT:PCBM are comparable to those of poly(3‐hexylthiophene), P3HT, and P3HT:PCBM, respectively. Moreover, the spectral sensitivity of PCPDTBT:PCBM extends significantly deeper into the infrared, to 900 nm, than that of P3HT. The potential of PCPDTBT as a material for high‐efficiency polymer solar cells is discussed.  相似文献   

18.
    
Organic semiconductors have attracted tremendous attention in the past few years, thanks to their excellent flexibility, solution‐processability, low‐cost, chemical versatility, etc. Particularly, organic solar cells based on ternary heterojunctions have shown remarkable device performance, with the recent development of nonfullerene acceptor materials. These novel materials are also promising for photodetection. However, there are several key limits facing organic photodetectors, such as relatively large bandgaps, poor charge transport, and stability. In this work, a novel nonfullerene acceptor—COi8DFIC—is introduced, blended with a fullerene derivative and a donor to form ternary heterojunctions. After optimization, photodiodes based on such ternary blends exhibit compelling performance metrics, including low dark current, decent responsivity, large linear dynamic range, fast response, and excellent stability. This device performance is actually on a par with the established silicon technology, suggesting great potential for photodetection and imaging.  相似文献   

19.
    
A series of side-chain polystyrenes was developed as ambipolar hosts for solution processed organic light emitting diodes (OLEDs). The series was derived from the hole-only transport host molecule 1,3-Bis(N-carbazolyl)benzene (mCP). Electron transport ability was incorporated into the host polymers by the introduction of electron-poor heterocycles (pyridine or triazine) and extending delocalization of the lowest unoccupied molecular orbital (LUMO). The materials were tested in Ir-based green OLED devices with all organic layers processed from solution. Devices with the polymer combining triazine and carbazole on its side-chain exhibited a low luminance on-set voltage of 3.0 V and a current efficacy of 28.9 cd/A, which was more than 10 times higher than for devices with the mCP-based polymer (1.6 cd/A). The increase in performance is most likely due to an improvement of charge balance in the emissive layer, showing that our ambipolar polymers are good candidates for further wet-process optoelectronic applications.  相似文献   

20.
    
The photoconductivity of solution‐cast Zn1–xMgxO (x=0‐0.4) and poly(3‐hexylthiophene) (P3HT) thin films, and Zn1‐xMgxO/P3HT bilayers is investigated using Time‐Resolved Microwave Conductivity (TRMC) with the aim of determining the locus of free charge carrier generation in the bilayer system. The photoconductivity of Zn1–xMgxO thin films, under illumination with 300 nm laser pulses, is limited by the formation of stable excitons and by scattering of the carriers at grain boundaries. The electron mobility in Zn1–xMgxO films decreases exponentially with Mg concentration, up to x=0.4. In agreement with previous work, free carriers are observed in the P3HT film under illumination with 500 nm pulses in the absence of an acceptor. Under illumination with 500 nm pulses, where only the polymer absorbs, the TRMC signal for the Zn1–xMgxO/P3HT bilayers for x≥0.2 is the same as that of pure P3HT, indicating that free carrier generation in these bilayers occurs predominately by exciton dissociation in the polymer bulk, and not at the interface between the polymer and the solution‐cast oxide. At lower Mg concentrations (x<0.2) the TRMC signal increases with decreasing x following the dependence of the electron mobility in the oxide but its light intensity dependence remains consistent with free carrier generation in the polymer bulk. To explain these results and previously published photovoltaic device data (Adv. Funct. Mater. 2007 , 17, 264) we propose that free carrier generation in the bilayers predominantly occurs in the bulk of P3HT, and is followed by electron injection to the oxide to yield photocurrent in photovoltaic cells. The dependence of the TRMC signal of the bilayers on Mg concentration is explained in terms of the yield for free carrier generation in the polymer and the relative contributions of electrons in the oxide and holes in the polymer.  相似文献   

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