Cover Picture: White Electroluminescence from a Single‐Polymer System with Simultaneous Two‐Color Emission: Polyfluorene as the Blue Host and a 2,1,3‐Benzothiadiazole Derivative as the Orange Dopant (Adv. Funct. Mater. 7/2006)

New single‐polymer electroluminescent systems containing two individual emission species—polyfluorenes as a blue host and 2,1,3‐benzothiadiazole derivative units as an orange dopant on the main chain—have been designed and synthesized by Wang and co‐workers on p. 957. The resulting single polymers are found to have highly efficient white electroluminescence with simultaneous blue and orange emission from the corresponding emitting species. A single‐layer device has been fabricated that has performance characteristics roughly comparable to those of organic white‐light‐emitting diodes with multilayer device structures. New single‐polymer electroluminescent systems containing two individual emission species—polyfluorenes as a blue host and 2,1,3‐benzothiadiazole derivative units as an orange dopant on the main chain—have been designed and synthesized. The resulting single polymers are found to have highly efficient white electroluminescence with simultaneous blue (λ_max = 421 nm/445 nm) and orange emission (λ_max = 564 nm) from the corresponding emitting species. The influence of the photoluminescence (PL) efficiencies of both the blue and orange species on the electroluminescence (EL) efficiencies of white polymer light‐emitting diodes (PLEDs) based on the single‐polymer systems has been investigated. The introduction of the highly efficient 4,7‐bis(4‐(N‐phenyl‐N‐(4‐methylphenyl)amino)phenyl)‐2,1,3‐benzothiadiazole unit to the main chain of polyfluorene provides significant improvement in EL efficiency. For a single‐layer device fabricated in air (indium tin oxide/poly(3,4‐ethylenedioxythiophene): poly(styrene sulfonic acid/polymer/Ca/Al), pure‐white electroluminescence with Commission Internationale de l'Eclairage (CIE) coordinates of (0.35,0.32), maximum brightness of 12 300 cd m^–2, luminance efficiency of 7.30 cd A^–1, and power efficiency of 3.34 lm W^–1 can be obtained. This device is approximately two times more efficient than that utilizing a single polyfluorene containing 1,8‐naphthalimide moieties, and shows remarkable improvement over the corresponding blend systems in terms of efficiency and color stability. Thermal treatment of the single‐layer device before cathode deposition leads to the further improvement of the device performance, with CIE coordinates of (0.35,0.34), turn‐on voltage of 3.5 V, luminance efficiency of 8.99 cd A^–1, power efficiency of 5.75 lm W^–1, external quantum efficiency of 3.8 %, and maximum brightness of 12 680 cd m^–2. This performance is roughly comparable to that of white organic light‐emitting diodes (WOLEDs) with multilayer device structures and complicated fabrication processes.     

Recent Advances in Optical Engineering of Light‐Emitting Electrochemical Cells

Since the first demonstration of light‐emitting electrochemical cells (LECs) in 1995, much effort has been made to develop this technology for display and lighting. A common LEC generally contains a single emissive layer blended with a salt, which provides mobile ions under a bias. Ions accumulated at electrodes facilitate electrochemical doping such that operation voltage is low even when employing high‐work‐function inert electrodes. The superior properties of simple device architecture, low‐voltage operation, and compatibility with inert metal electrode render LECs suitable for cost‐effective light‐emitting sources. In addition to enormous progress in developing novel emissive materials for LECs, optical engineering has been shown to improve device performance of LECs in an alternative way. Light outcoupling enhancement technologies recycle the trapped light and increase the light output from LECs. Techniques to estimate emission zone position provide a powerful tool to study carrier balance of LECs and to optimize device performance. Spectral tailoring of the output emission from LECs based on microcavity effect and localized surface plasmon resonance of metal nanoparticles improves the intrinsic emission properties of emissive materials by optical means. These reported optical techniques are overviewed in this review.     

Simultaneous Tenfold Brightness Enhancement and Emitted‐Light Spectral Tunability in Transparent Ambipolar Organic Light‐Emitting Transistor by Integration of High‐k Photonic Crystal

In organic light‐emitting transistors, the structural properties such as the in‐plane geometry and the lateral charge injection are the key elements that enable the monolithic integration of multiple electronic, optoelectronic, and photonic functions within the same device. Here, the realization of highly integrated multifunctional optoelectronic organic device is reported by introducing a high‐capacitance photonic crystal as a gate dielectric into a transparent single‐layer ambipolar organic light‐emitting transistor (OLET). By engineering the photonic crystal multistack and bandgap, it is showed that the integration of the photonic structure has a twofold effect on the optoelectronic performance of the device, i.e., i) to modulate the spectral profile and outcoupling of the emitted light and ii) to enhance the transistor source–drain current by a 25‐fold factor. Consequently, the photonic‐crystal‐integrated OLET shows an order of magnitude higher emitted power and brightness with respect to the corresponding polymer‐dielectric device, while presenting as‐designed electroluminescence spectral and spatial distribution. The results validate the efficacy of the proposed approach that is expected to unravel the technological potential for the realization of highly integrated optoelectronic smart systems based on organic light‐emitting transistors.     

Investigation on the Low Luminous Efficiency in a Polymer Light‐Emitting Diode with a High Work‐function Cathode by Soft Contact Lamination**

This article reports the main origin of the low luminescent efficiency in hole‐dominant polymer light‐emitting diodes by controlling the hole injection and by chemically modifying the cathode by molecular monolayers. Since molecular modification of the top electrode is impossible when one deposits the electrode using a vacuum deposition method, this study was performed using a soft contact lamination technique to form electrical contacts on top of the emissive layer. The top electrode was chemically modified with an alkane thiol self‐assembled monolayer (SAM) to act as an interfacial spacer layer between the emitting layer and the cathode. Herein, it is reported that, contrary to common belief, a high device quantum efficiency can be achieved from the dominantly hole‐transporting device with a high work‐function cathode (like Au) by facilitating more hole injection from the anode in the device with low population of exciton quenching channels near the cathode.     

Color Tuning of Avobenzone Boron Difluoride as an Emitter to Achieve Full‐Color Emission

Organic light‐emitting diodes (OLEDs) displaying a wide range of emission colors with emission peaks from 450 to 665 nm using a single emitting material, avobenzone boron difluoride (AVB‐BF₂), are reported. Color tuning is achieved by controlling the aggregation of AVB‐BF₂ and the formation of a “triadic” exciplex of an AVB‐BF₂ dimer and a host molecule. Various electroluminescent devices containing AVB‐BF₂ cover the whole visible light spectrum and a white‐emitting device with CIE coordinates of (0.35, 0.37) is obtained with a single emitting material in a single emissive layer. Furthermore, an exceptionally high external quantum efficiency of nearly 13% is achieved for a green‐emitting OLED because AVB‐BF₂ exhibits thermally activated delayed fluorescence by forming the exciplex.     

An Indolocarbazole‐Based Thermally Activated Delayed Fluorescence Host for Solution‐Processed Phosphorescent Tandem Organic Light‐Emitting Devices Exhibiting Extremely Small Efficiency Roll‐Off

The study reports the development of a solution‐processed phosphorescent tandem organic light‐emitting device (OLED) exhibiting extremely small efficiency roll‐off. The OLED comprises two light‐emitting units (LEUs) connected by an interconnecting unit and employs a thermally activated delayed fluorescence host material. One of the most difficult tasks in the fabrication of OLEDs is to form a multilayer structure without dissolving the underlayer during the coating of the upper layer. The developed host materials exhibit high tolerance to methanol. The upper‐layer adjacent to the light‐emitting layer consists of ZnO nanoparticles, which could be dispersed in methanol by improving the preparation method. This results in the successful fabrication of a solution‐processed phosphorescent tandem OLED comprising two LEUs. The maximum external quantum efficiency (EQE) of the tandem device is 22.8%, and the EQE is 21.9% even at a high luminance of 10 000 cd m^?2. The suppression of efficiency roll‐off is among the best of those previously reported. Moreover, the operational stability of the tandem device is much higher compared with single‐LEU devices.     

High Performance p‐ and n‐Type Light‐Emitting Field‐Effect Transistors Employing Thermally Activated Delayed Fluorescence

Light‐emitting field‐effect transistors (LEFETs) are an emerging type of devices that combine light‐emitting properties with logical switching function. One of the factors limiting their efficiency stems from the spin statistics of electrically generated excitons. Only 25% of them, short lived singlet states, are capable of light emission, with the other 75% being long lived triplet states that are wasted as heat due to spin‐forbidden processes. Traditionally, the way to overcome this limitation is to use phosphorescent materials as additional emission channel harnessing the triplet excitons. Here, an alternative strategy for triplet usage in LEFETs in the form of thermally activated delayed fluorescence (TADF) is presented. Devices employing a TADF capable material, 4CzIPN (2,4,5,6‐tetra[9H‐carbazol‐9‐yl]isophthalonitrile), in both n‐type and p‐type configurations are shown. They manifest excellent electrical characteristics, consistent brightness in the range of 100–1,000 cd m^‐2 and external quantum efficiency (EQE) of up to 0.1%, which is comparable to the equivalent organic light‐emitting diode (OLED) based on the same materials. Simulation identifies the poor light out‐coupling as the main reason for lower than expected EQEs. Transmission measurements show it can be partially alleviated using a more transparent top contact, however more structural optimization is needed to tap the full potential of the device.     

Highly Efficient Three Primary Color Organic Single‐Crystal Light‐Emitting Devices with Balanced Carrier Injection and Transport

Organic single crystals have a great potential in the field of organic optoelectronics because of their advantages of high carrier mobility and high thermal stability. However, the application of the organic single crystals in light‐emitting devices (OLEDs) has been limited by single‐layered structure with unbalanced carrier injection and transport. Here, fabrication of a multilayered‐structure crystal‐based OLED constitutes a major step toward balanced carrier injection and transport by introducing an anodic buffer layer and electron transport layer into the device structure. Three primary color single‐crystal‐based OLEDs based on the multilayered structure and molecular doping exhibit a maximum luminance and current efficiency of 820 cd cm^?2 and 0.9 cd A^?1, respectively, which are the highest performance to date for organic single‐crystal‐based OLEDs. This work paves the way toward high‐performance organic optoelectronic devices based on the organic single crystals.     

Light‐Emitting Paper

A solution‐based fabrication of flexible and light‐weight light‐emitting devices on paper substrates is reported. Two different types of paper substrates are coated with a surface‐emitting light‐emitting electrochemical cell (LEC) device: a multilayer‐coated specialty paper with an intermediate surface roughness of 0.4 μm and a low‐end and low‐cost copy paper with a large surface roughness of 5 μm. The entire device fabrication is executed using a handheld airbrush, and it is notable that all of the constituent layers are deposited from solution under ambient air. The top‐emitting paper‐LECs are highly flexible, and display a uniform light emission with a luminance of 200 cd m^?2 at a current conversion efficacy of 1.4 cd A^?1.     

From White to Red: Electric‐Field Dependent Chromaticity of Light‐Emitting Electrochemical Cells based on Archetypal Porphyrins

The differences in the electroluminescence (EL) of red‐emitting free‐base ( H2TPP ) and Zn‐metalated ( ZnTPP ) archetypal porphyrins are rationalized in light‐emitting electrochemical cells by means of an electric‐field dependent effect, leading to whitish and reddish devices, respectively. Although H2TPP shows superior electrochemical and photophysical features compared to ZnTPP , devices prepared with ZnTPP surprisingly stand out with a deep‐red EL similar to its photoluminescence (PL), while H2TPP devices feature unexpected whitish EL. Standard arguments such as degradation, device architecture, device mechanism, and changes in the nature of the emitting excited states are discarded. Based on electrochemical impedance spectroscopy and first‐principles electronic structure methods, we provide evidence that the EL originates from two H2TPP regioisomers, in which the inner ring H atoms are placed in collinear and vicinal configurations. The combination of their optical features provides an explanation for both the high‐ and low‐energy EL features. Here, the emitting excited state nature is ascribed to the Q bands, since the Soret excited states remain high in energy. This contrasts to what is traditionally postulated in reports focused on H2TPP lighting devices. Hence, this work provides a new explanation for the nature of the high‐energy EL band of H2TPP that might inspire future works focused on white‐emitting molecular‐based devices.     

Achieving Highly Efficient Fluorescent Blue Organic Light‐Emitting Diodes Through Optimizing Molecular Structures and Device Configuration

Based on the results of first‐principles calculations of the electronic properties of blue light‐emitting materials, the molecular structures of oligofluorenes are optimized by incorporating electron‐withdrawing groups into the molecules to balance hole and electron injection and transport for organic light‐emitting diodes (OLEDs). The result is a remarkable improvement in the maximum external quantum efficiency (EQE) of the undoped device from 2.0% to 4.99%. Further optimization of the device configurations and processing procedures, e.g., by changing the thickness of the emitting layer and through thermal annealing treatments, leads to a very high maximum EQE of 7.40% for the undoped sky‐blue device. Finally, by doping the emitter in a suitable host material, 4,4’‐bis(carbazol‐9‐yl)biphenyl (CBP), at the optimal concentration of 6%, pure blue emission with extremely high maximum EQE of 9.40% and Commission Internationale de l’Eclairage (CIE) coordinates of (0.147, 0.139) is achieved.     

Stable,Glassy, and Versatile Binaphthalene Derivatives Capable of Efficient Hole Transport,Hosting, and Deep‐Blue Light Emission

Organic light‐emitting diodes (OLEDs) have great potential applications in display and solid‐state lighting. Stability, cost, and blue emission are key issues governing the future of OLEDs. The synthesis and photoelectronics of a series of three kinds of binaphthyl (BN) derivatives are reported. BN_1–3 are “melting‐point‐less” and highly stable materials, forming very good, amorphous, glass‐like films. They decompose at temperatures as high as 485–545 °C. At a constant current density of 25 mA cm^?2, an ITO/BN₃/Al single‐layer device has a much‐longer lifetime (>80 h) than that of an ITO/NPB/Al single‐layer device (8 h). Also, the lifetime of a multilayer device based on BN₁ is longer than a similar device based on NPB. BNs are efficient and versatile OLED materials: they can be used as a hole‐transport layer (HTL), a host, and a deep‐blue‐light‐emitting material. This versatility may cut the cost of large‐scale material manufacture. More importantly, the deep‐blue electroluminescence (emission peak at 444 nm with CIE coordinates (0.16, 0.11), 3.23 cd A^?1 at 0.21 mA cm^?2, and 25200 cd m^?2 at 9 V) remains very stable at very high current densities up to 1000 mA cm^?2.     

Novel Heterolayer Organic Light‐Emitting Diodes Based on a Conjugated Dendrimer

We demonstrate a novel organic light‐emitting diode (LED) heterolayer structure that contains a conjugated dendrimer as the light‐emitting molecule. The LED was prepared by spin‐coating two dendrimer layers from the same solvent. The device consists of a graded bilayer structure formed from a neat dendrimer film covered with a film consisting of the same dendrimer but doped with the electron‐transporting material 2‐(4‐biphenylyl)‐5‐phenyl‐1,3,4‐oxadiazole (PBD). In this device, the heterojunction interface present in conventional bilayer organic light‐emitting diodes is eliminated, and is replaced by a graded interlayer. By optimizing the concentration of PBD in the dendrimer, a peak electroluminescence (EL) external quantum efficiency of 0.16 % at 600 cd m^–2 was obtained. The EL quantum efficiency is significantly enhanced in comparison with devices based on a single layer, a conventional bilayer, and a single‐layer doped with PBD. The EL quantum efficiency is a factor of eight larger than that of a conventional bilayer LED made with the conjugated dendrimer as the emissive layer and poly(methylmethacrylate) (PMMA) doped with PBD as the electron‐transporting layer. The best blended device exhibited only one third of the efficiency of the graded device. The improvement in the operating characteristics of the graded device is attributed to the efficient device structure, in which exciton formation is improved by a graded doping profile of electron‐ and hole‐transporting components.     

White Electroluminescence from a Single‐Polymer System with Simultaneous Two‐Color Emission: Polyfluorene as the Blue Host and a 2,1,3‐Benzothiadiazole Derivative as the Orange Dopant

New single‐polymer electroluminescent systems containing two individual emission species—polyfluorenes as a blue host and 2,1,3‐benzothiadiazole derivative units as an orange dopant on the main chain—have been designed and synthesized. The resulting single polymers are found to have highly efficient white electroluminescence with simultaneous blue (λ_max = 421 nm/445 nm) and orange emission (λ_max = 564 nm) from the corresponding emitting species. The influence of the photoluminescence (PL) efficiencies of both the blue and orange species on the electroluminescence (EL) efficiencies of white polymer light‐emitting diodes (PLEDs) based on the single‐polymer systems has been investigated. The introduction of the highly efficient 4,7‐bis(4‐(N‐phenyl‐N‐(4‐methylphenyl)amino)phenyl)‐2,1,3‐benzothiadiazole unit to the main chain of polyfluorene provides significant improvement in EL efficiency. For a single‐layer device fabricated in air (indium tin oxide/poly(3,4‐ethylenedioxythiophene): poly(styrene sulfonic acid/polymer/Ca/Al), pure‐white electroluminescence with Commission Internationale de l'Eclairage (CIE) coordinates of (0.35,0.32), maximum brightness of 12 300 cd m^–2, luminance efficiency of 7.30 cd A^–1, and power efficiency of 3.34 lm W^–1 can be obtained. This device is approximately two times more efficient than that utilizing a single polyfluorene containing 1,8‐naphthalimide moieties, and shows remarkable improvement over the corresponding blend systems in terms of efficiency and color stability. Thermal treatment of the single‐layer device before cathode deposition leads to the further improvement of the device performance, with CIE coordinates of (0.35,0.34), turn‐on voltage of 3.5 V, luminance efficiency of 8.99 cd A^–1, power efficiency of 5.75 lm W^–1, external quantum efficiency of 3.8 %, and maximum brightness of 12 680 cd m^–2. This performance is roughly comparable to that of white organic light‐emitting diodes (WOLEDs) with multilayer device structures and complicated fabrication processes.     

Quantum Dot Light‐Emitting Transistors—Powerful Research Tools and Their Future Applications

In this progress report, the recent work in the field of light‐emitting field‐effect transistors (LEFETs) based on colloidal quantum dots (CQDs) as emitters is highlighted. These devices combine the possibility of electrical switching, as known from field‐effect transistors, with the possibility of light emission in a single device. The properties of field‐effect transistors and the prerequisites of LEFETs are reviewed, before motivating the use of colloidal quantum dots for light emission. Recent reports on these quantum dot light‐emitting field‐effect transistors (QDLEFETs) include both materials emitting in the near infrared and the visible spectral range—underlining the great potential and breadth of applications for QDLEFETs. The way in which LEFETs can further the understanding of the CQD material properties—their photophysics as well as the carrier transport through films—is discussed. In addition, an overview of technology areas offering the potential for large impact is provided.     

Organic Light‐Emitting Transistors Containing a Laterally Arranged Heterojunction

An approach to produce organic light‐emitting transistors (OLETs) containing a laterally arranged heterojunction structure, which minimizes exciton quenching at the metal electrodes, is described. This device configuration provides an organic light‐emitting diode (OLED) structure where the anode (source) electrode, hole‐transport material (field‐effect material), light‐emitting material, and cathode (drain) electrode are laterally arranged, thus offering a chance to control the electroluminescent intensity by changing the gate bias. Pentacene and tris(8‐quinolinolato)aluminum (Alq₃) are employed as the field‐effect and light‐emitting materials, respectively. The laterally arranged heterojunction structures are achieved by successively inclined deposition of the field‐effect and light‐emitting materials. After deposition of pentacene, a narrow gap of about 10–20 nm between the drain electrode and pentacene was obtained, thereby creating an opportunity to fabricate a laterally arranged heterojunction. In the OLETs, unsymmetrical source and drain electrodes, that is, Au and LiF/Al ones, are used to ensure efficient injection of holes and electrons. Visible‐light emission from OLETs is observed under ambient atmosphere. This result is ascribed to efficient carrier injection and transport, formation of a heterojunction, as well as good luminescence from the organic emissive layer. The device structure serves as an excellent model system for OLETs and demonstrates a general concept of adjusting the charge‐carrier injection and transport, as well as the electroluminescent properties, by forming laterally arranged heterojunctions.     

Investigating the Role of Emissive Layer Architecture on the Exciton Recombination Zone in Organic Light‐Emitting Devices

An experimental approach to determine the spatial extent and location of the exciton recombination zone in an organic light‐emitting device (OLED) is demonstrated. This technique is applicable to a wide variety of OLED structures and is used to examine OLEDs which have a double‐ (D‐EML), mixed‐ (M‐EML), or graded‐emissive layer (G‐EML) architecture. The location of exciton recombination in an OLED is an important design parameter, as the local optical field sensed by the exciton greatly determines the efficiency and angular distribution of far‐field light extraction. The spatial extent of exciton recombination is an important parameter that can strongly impact exciton quenching and OLED efficiency, particularly under high excitation. A direct measurement of the exciton density profile is achieved through the inclusion of a thin, exciton sensitizing strip in the OLED emissive layer which locally quenches guest excitons and whose position in the emissive layer can be translated across the device to probe exciton formation. In the case of the G‐EML device architecture, an electronic model is developed to predict the location and extent of the exciton density profile by considering the drift, diffusion, and recombination of charge carriers within the device.     

Cover Picture: An Organic Light‐Emitting Diode with Field‐Effect Electron Transport (Adv. Funct. Mater. 1/2008)

The cover shows an organic light‐emitting diode with remote metallic cathode, reported by Sarah Schols and co‐workers on p. 136. The metallic cathode is displaced from the light‐emission zone by one to several micrometers. The injected electrons accumulate at an organic heterojunction and are transported to the light‐emission zone by field‐effect. The achieved charge‐carrier mobility and in combination with reduced optical absorption losses because of the remoteness of the cathode may lead to applications as waveguide OLEDs and possibly a laser structure. (The result was obtained in the EU‐funded project “OLAS” IST‐ FP6‐015034.) We describe an organic light‐emitting diode (OLED) using field‐effect to transport electrons. The device is a hybrid between a diode and a field‐effect transistor. Compared to conventional OLEDs, the metallic cathode is displaced by one to several micrometers from the light‐emitting zone. This micrometer‐sized distance can be bridged by electrons with enhanced field‐effect mobility. The device is fabricated using poly(triarylamine) (PTAA) as the hole‐transport material, tris(8‐hydroxyquinoline) aluminum (Alq₃) doped with 4‐(dicyanomethylene)‐2‐methyl‐6‐(julolindin‐4‐yl‐vinyl)‐4H‐pyran (DCM₂) as the active light‐emitting layer, and N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (PTCDI‐C₁₃H₂₇), as the electron‐transport material. The obtained external quantum efficiencies are as high as for conventional OLEDs comprising the same materials. The quantum efficiencies of the new devices are remarkably independent of the current, up to current densities of more than 10 A cm^–2. In addition, the absence of a metallic cathode covering the light‐emission zone permits top‐emission and could reduce optical absorption losses in waveguide structures. These properties may be useful in the future for the fabrication of solid‐state high‐brightness organic light sources.     

Efficient Blue Perovskite Light‐Emitting Diodes Boosted by 2D/3D Energy Cascade Channels

Lead halide perovskite, as an emerging semiconductor, provides a fire‐new opportunity for high‐definition display and solid‐state lighting. Earthshaking improvements are implemented in green, red, and near‐infrared perovskite light‐emitting diodes (PeLEDs). However, blue PeLEDs are still far behind in performance, which restricts the development of PeLEDs in practical applications. Herein, a facile energy cascade channel strategy via one‐step self‐organized and controllable 2D/3D perovskite preparation by introducing guanidine hydrobromide (GABr) is developed that greatly improves the efficiency of blue PeLEDs. The 2D/3D perovskite structure boosts the energy cascade to induce energy transfer from the wide into the narrow bandgap domains and inhibit free charge diffusion, which increases the density of electrons and holes, and enhances the radiative recombination. Profiting from this energy cascade channels, the external quantum efficiency of blue PeLEDs, emitting at 492 nm, is considerably enhanced from 1.5% of initial blue device to 8.2%. In addition, device operating stability under ambient conditions is also improved by 2.6‐fold. The one‐step self‐organized 2D/3D hybrid perovskites induced by GABr pave a new and simple route toward high‐performance blue emission PeLEDs.     

Inverted Solution Processable OLEDs Using a Metal Oxide as an Electron Injection Contact.

A new type of bottom‐emission electroluminescent device is described in which a metal oxide is used as the electron‐injecting contact. The preparation of such a device is simple. It consists of the deposition of a thin layer of a metal oxide on top of an indium tin oxide covered glass substrate, followed by the solution processing of the light‐emitting layer and subsequently the deposition of a high‐workfunction (air‐stable) metal anode. This architecture allows for a low‐cost electroluminescent device because no rigorous encapsulation is required. Electroluminescence with a high brightness reaching 5700 cd m^–2 is observed at voltages as low as 8 V, demonstrating the potential of this new approach to organic light‐emitting diode (OLED) devices. Unfortunately the device efficiency is rather low because of the high current density flowing through the device. We show that the device only operates after the insertion of an additional hole‐injection layer in between the light‐emitting polymer (LEP) and the metal anode. A simple model that explains the experimental results and provides avenues for further optimization of these devices is described. It is based on the idea that the barrier for electron injection is lowered by the formation of a space–charge field over the metal‐oxide–LEP interface due to the build up of holes in the LEP layer close to this interface.